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1. 发明专利

JPH07179754A COMPOSITION FOR FORMING ELECTRICALLY CONDUCTIVE AGENT AND METHOD FOR FORMING PATTERN 失效
公开(公告)号：JPH07179754A
公开(公告)日：1995-07-18
申请号：JP32423793
申请日：1993-12-22
申请人： FUJITSU LTD , NITTO CHEMICAL INDUSTRY CO LTD
发明人： NAMIKI TAKAHISA , YANO EI , WATABE KEIJI , IGARASHI YOSHIKAZU , KURAMITSU YOKO , MARUYAMA TAKASHI , YANO KEIKO , NAKAMURA TOMIO , SHIMIZU SHIGERU , SAITO TAKASHI
IPC分类号： G03F7/004 , C08K5/19 , C08K5/41 , C08L79/00 , C08L81/00 , C08L81/06 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/38 , H01L21/027
摘要： PURPOSE:To obtain the subject composition capable of preventing deactivation of an acid of a chemical amplification type resist, checking electrification during exposure to charged radiation, comprising a sulfonated polyaniline, a solvent, an amine, a sulfone group-containing component in a specific ratio, respectively. CONSTITUTION:This compound comprises (A) 0.1-20 pts.wt. of a sulfonated polyanlline having 20-80% sulfone group content based on the aromatic ring (preferably one having 500-100,000 molecular weight), (B) 100 pts.wt. of a solvent, (C) 0.01-10 pts.wt. of an amine [e.g. a compound of formula I (R1 to R4 each is H, a 1-4C alkyl, CH2OH, NH2, etc.), etc.] and/or a quaternary ammonium salt [e.g. a compound of formula II (R1 to R4 each is H or a 1-4C alkyl; X is OH, 1/2SO 4, NO3, etc.) and (D) 0.001-100 pts.wt. of a sulfone group-containing compound and/or polymer (preferably an ammonium salt).

2. 发明专利

JP2006093693A Fine processing method, and semiconductor element and magnetic head fabricated by the same 有权
标题翻译：精加工方法，以及由其组成的半导体元件和磁头
公开(公告)号：JP2006093693A
公开(公告)日：2006-04-06
申请号：JP2005256785
申请日：2005-09-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： WATABE KEIJI , YANO EI , NOZAKI KOJI , IGARASHI YOSHIKAZU , NAMIKI TAKAHISA , KAIMOTO HIROKO , KURAMITSU YOKO , SHIBAMOTO TSUTOMU , SHIRATAKI HIROSHI , HOSHINO EIICHI , YAMAMOTO YUICHI , MINAGAWA TOSHIKATSU
IPC分类号： H01L21/027 , G03F7/26 , G03F7/38 , G11B5/39 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a fine processing method capable of improving the uniformity of a substrate surface processed in a short time simply and effectively and thereby improving close contact performance between the substrate and a variety of thin films and enabling the prevention of the defective development of a resist film and the improvement of a pattern shape. SOLUTION: The entire surface of the substrate to be processed 130 is irradiation-processed with monochromatic light 139 having a wavelength in a region ranging from far-ultraviolet to vacuum ultraviolet and a half-value width of 30 nm or narrower. It is preferred to apply the monochromatic light within ±15% in illuminance distribution. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题：提供能够简单且有效地提高在短时间内加工的基板表面的均匀性的精细加工方法，从而提高基板和各种薄膜之间的紧密接触性能，并且能够防止的抗蚀剂膜的不良发展和图案形状的改善。解决方案：被处理基板130的整个表面用具有从远紫外至真空紫外线和半值宽度为30nm或更窄的区域中的波长的单色光139照射加工。优选将单色光应用于照度分布±15％以内。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JPH09249749A ALKALI-SOLUBLE SILOXANE POLYMER 失效
公开(公告)号：JPH09249749A
公开(公告)日：1997-09-22
申请号：JP6275096
申请日：1996-03-19
申请人： FUJITSU LTD
发明人： IGARASHI YOSHIKAZU , WATABE KEIJI , YANO EI , NAMIKI TAKAHISA , NOZAKI KOJI , KURAMITSU YOKO
IPC分类号： G03F7/075 , C08G77/48 , C08G77/52
摘要： PROBLEM TO BE SOLVED: To improve a resolution and an etching resistance by silylating a specified siloxane polymer with a monohalogenodialkylsilane. SOLUTION: A dihalogenodialkylsilane represented by formula I (wherein R and R are each H or a monovalent organic group; and X is a halogen) is reacted with a Grignard reagent represented by formula II (wherein R and R are each H, Cl or a monovalent organic group; R is a monovalent organic group; (m) is 1-3; and (n) is 1 or 2) to obtain a monohalogenodialkylsilane represented by formula III. A siloxane polymer corresponding to R of formula V is silylated with the monohalogenodialkylsilane to obtain a siloxane polymer represented by formula IV (wherein R is a residue of the siloxane polymer; and (a) and (b) are each 1 or greater). At least 50% of the OR of this polymer are converted into OH groups to obtain a water-soluble siloxane polymer represented by formula V (wherein R is H or a monovalent organic group, provided that at least 50% of R s are H groups).

4. 发明专利

JPH0990613A RESIST COMPOSITION AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH0990613A
公开(公告)日：1997-04-04
申请号：JP24203395
申请日：1995-09-20
申请人： FUJITSU LTD
发明人： NAMIKI TAKAHISA , YANO EI , WATABE KEIJI , NOZAKI KOJI , IGARASHI YOSHIKAZU , KURAMITSU YOKO
IPC分类号： G03F7/004 , G03F7/032 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To enhance sensitivity and resolution by using, as a dissolution inhibitor, a specified compound having a lone electron pair-holding part for gathering the alkali-soluble parts of a base resin to the side of a dissolution inhibiting function part using this lone electron pair-holding part selected from the group consisting of a group containg oxygen atom and the like. SOLUTION: The dissolution inhibitor is represented by formula I in which A is a structure comprising a group of atoms for completing the main cyclic or noncyclic nucleus of a dissolution inhibiting structure; SIG is, independently, a dissolution inhibiting group combined with and releasable from the structure A by the action of acid; and (m) is an integer of >=1 of SIG combined with A. The structure A of the dissolution inhibitor has a part of holding lone electron pair for gathering the alkali soluble parts of the base resin to the side of the dissolution inhibiting parts and this part for holding the lone electron pair is a group having oxygen groups combined with a double bond represented by formula II or a group selected from an alkoxy group, such as -OCH3 , and the like.

5. 发明专利

JPH0980754A RESIST COMPOSITION AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH0980754A
公开(公告)日：1997-03-28
申请号：JP23956195
申请日：1995-09-19
申请人： FUJITSU LTD
发明人： IGARASHI YOSHIKAZU , WATABE KEIJI , YANO EI , NAMIKI TAKAHISA , NOZAKI KOJI , KURAMITSU YOKO
IPC分类号： G03F7/004 , C08G77/48 , C08G77/52 , G03F7/075 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To enable application to lithography using a having wa UV by incorporating a polymer having a specified silphenylene skeleton and a polymer having a specified siloxane skeleton. SOLUTION: This resist compsn. contains a polymer having a silphenylene skeleton represented by formula I and a polymer having a siloxane skeleton represented by formula II. In the formula I, each of R -R is alkyl, aryl, etc., a>0 and b>0. In the formula II, each of R and R is alkyl, k>=0, l>=0, m>=0, n>0 and k+l+n≠0. The amt. of the polymer having a siloxane skeleton represented by formula II is preferably 20-80wt.% of the total amt. of the polymers. In the case where R in the formula I is an org. group contg. a chloromethylphenyl group, the sensitivity of this resist compsn. is enhanced.

6. 发明专利

JPH07253676A RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH07253676A
公开(公告)日：1995-10-03
申请号：JP4531894
申请日：1994-03-16
申请人： FUJITSU LTD
发明人： WATABE KEIJI , YANO EI , NAMIKI TAKAHISA , NOZAKI KOJI , IGARASHI YOSHIKAZU , KURAMITSU YOKO
IPC分类号： G03F7/004 , G03F7/028 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027
摘要： PURPOSE:To form a resist pattern capable of providing high sensitivity and resolution by utilizing the deactivation of the acid of a chemically-amplified resist due to an amino substance, etc., in the atmosphere. CONSTITUTION:A chemically-amplified resist film contg. a photo-acid generator is formed on a substrate, the film is selectively exposed to generate acid partially from the generator, and the acid is deactivated. The film is then wholly exposed to generate the acid from the generator at the unexposed part, hence a difference in dissolving rate of the film is produced between the region where the acid generated by the selective exposure is deactivated and the region where the acid is generated from the generator at the part not exposed by the selective exposure by the whole exposure, and the resist is developed after the selective and whole exposure.

7. 发明专利

JPH0398075A HOLOGRAM RECORDING MATERIAL 失效
公开(公告)号：JPH0398075A
公开(公告)日：1991-04-23
申请号：JP23470289
申请日：1989-09-12
申请人： FUJITSU LTD
发明人： TANI MOTOAKI , YAMAGISHI YASUO , ISHIZUKA TAKESHI , KURAMITSU YOKO
IPC分类号： G03F7/038 , G03H1/02
摘要： PURPOSE:To obtain the hologram recording material which is transparent and is highly resistant to moisture, heat and light by using a polymer contg. a carbazole ring as a base material resin, using an org. peroxide as a photoreaction initiator and incorporating a compd. having at least either of specific structures as the basic skeleton in the molecule as the sensitizer for the photoreaction initiator into the resin. CONSTITUTION:The polymer contg. the carbazole ring is used as the base material resin and the org. peroxide as the photoreaction initiator. The compd. having either of the structures expressed by formulas I and II as the skeleton structure in the molecule is incorporated as the sensitizer for the photoreaction initiator into the resin. The amts. of the org. peroxide and sensitizer compd. to be added to the polymer contg. the carbazole ring which is the base material resin are preferably 1 to 20wt.% org. peroxide and 0.2 to 30wt.% sensitizer compd. Since the org. peroxide and the sensitizer compd. are easily removable, the resulted hologram is transparent. The hologram which is transparent and is highly resistant to moisture, heat and light is thus obtd.

8. 发明专利

JPH02123388A HOLOGRAM RECORDING MATERIAL 失效
公开(公告)号：JPH02123388A
公开(公告)日：1990-05-10
申请号：JP27675888
申请日：1988-11-01
申请人： FUJITSU LTD
发明人： TANI MOTOAKI , YAMAGISHI YASUO , ISHIZUKA TAKESHI , KURAMITSU YOKO
IPC分类号： G03F7/038 , G03H1/02
摘要： PURPOSE:To form the hologram which is transparent, is highly resistant to moisture, heat and light, is large in film thickness and is substantially free from cracks by adding a photoreaction initiator or the photoreaction initiator and sensitizing dye to a polymer contg. a carbazole ring synthesized by cation polymn. CONSTITUTION:The polymer contg. the carbazole ring synthesized by cation polymn. is used as a base material resin and the photoreaction initiator or the photoreaction initiator and the sensitizing dye are added to this polymer, by which the hologram recording material is constituted. The polymer synthesized by the cation polymn. in such a manner is easily soluble and, therefore, allows a decoloring processing and development processing by using a solvent of weak solubility. The generation of cracks is thus prevented even if the film thickness is increased. The hologram which is transparent and is highly resistant to moisture, heat and weather is formed.

9. 发明专利

JPH0990637A RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH0990637A
公开(公告)日：1997-04-04
申请号：JP31272295
申请日：1995-11-30
申请人： FUJITSU LTD
发明人： NOZAKI KOJI , YANO EI , WATABE KEIJI , NAMIKI TAKAHISA , IGARASHI YOSHIKAZU , KURAMITSU YOKO , TAKECHI SATOSHI , KODACHI AKIKO , TAKAHASHI MAKOTO
IPC分类号： G03F7/039 , G03F7/004 , G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a resist compsn. having a sensitivity capable of practical use and capable of forming a nonswellable fine resist pattern. SOLUTION: An acid-sensitive polymer contained in this chemical amplification type resist compsn. in combination with an optical acid generating agent contains a lactone part represented by the formula [where R is optionally substd. 1-4C straight chain or branched chain alkyl and (n) is an integer of 1-4] as a protective group for each carboxyl group.

10. 发明专利

JPH08262717A RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH08262717A
公开(公告)日：1996-10-11
申请号：JP6805695
申请日：1995-03-27
申请人： FUJITSU LTD
发明人： NOZAKI KOJI , YANO EI , WATABE KEIJI , NAMIKI TAKAHISA , IGARASHI YOSHIKAZU , KURAMITSU YOKO
IPC分类号： G03F7/027 , C08F20/52 , C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/56 , C08K5/00 , C08L33/02 , C08L33/04 , C08L33/10 , C08L33/24 , C08L33/26 , G03F7/012 , G03F7/038 , H01L21/027 , H01L21/312
摘要： PURPOSE: To obtain a resist compsn. capable of forming a negative resist pattern excellent in dry etching resistance and not causing swelling by using excimer laser light. CONSTITUTION: This resist compsn. contains a (meth)acrylate copolymer having a wt. average mol.wt. of 2,000-1,000,000 and a crosslinking agent which is decomposed by absorbing radiation for forming an image and can crosslink the copolymer by subsequent heating. The copolymer consists of vinyl monomer units each having at least one carbon-carbon double bond not taking part in polymn. but capable of crosslinking by the crosslinking agent in the side chain and copolymerizable with acrylic acid or methacrylic acid ester, acrylamide or methacrylamide monomer units, acrylic acid or methacrylic acid monomer units and adamantyl acrylate or methacrylate monomer units as repeating units.

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