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1. 发明专利

JPH11119441A PATTERN FORMING METHOD 失效
公开(公告)号：JPH11119441A
公开(公告)日：1999-04-30
申请号：JP27600397
申请日：1997-10-08
申请人： FUJITSU LTD , NITTO CHEMICAL INDUSTRY CO LTD
发明人： WATABE KEIJI , YANO EI , NAMIKI TAKAHISA , NOZAKI KOJI , IGARASHI YOSHIKAZU , YANO KEIKO , KAIMOTO HIROKO , SHIMIZU SHIGERU , SAITO TAKASHI , UZAWA MASASHI
IPC分类号： G03F7/004 , G03F7/38 , H01L21/302 , H01L21/3065 , H01L51/00 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method which is capable of avoiding the destruction of gate insulating films, etc., occurring in the charge-up of resist films and the degradation in alignment accuracy, is smaller in the number of stages and contributes to a reduction of the production cost of semiconductor integrated circuits. SOLUTION: An org. conductive film 12 consisting of an org. conductive material change in its polarity by exposure (or baking after exposure) is formed on a substrate 10 on which a film 11 to be finely worked is formed. The org. conductive film 12 is thereafter subjected to selective exposure, then to baking at need following to a silanization treatment. The film is then subjected to plasma etching using gas contg. oxygen to remove the non-silanized parts of the surface of the org. conductive film 12. As a result, the film 11 to be treated is dry etched with the patterns consisting of the remaining org. conductive film 12 as a mask.

2. 发明专利

JPH09312257A FINE PROCESSING METHOD AND DEVICE 失效
公开(公告)号：JPH09312257A
公开(公告)日：1997-12-02
申请号：JP6477897
申请日：1997-03-18
申请人： FUJITSU LTD
发明人： WATABE KEIJI , YANO EI , NOZAKI KOJI , IGARASHI YOSHIKAZU , NAMIKI TAKAHISA , KAIMOTO HIROKO , KURAMITSU YOKO , SHIBAMOTO TSUYOSHI , SHIRATAKI HIROSHI , HOSHINO EIICHI , YAMAMOTO YUICHI , MINAGAWA TOSHIKATSU
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the evenness of the surface of a substrate to be treated and the adhesion between the substrate and a thin film by a method wherein monochromatic light of a specified half-width or narrower is entire surface- irradiated on the substrate to be treated prior to or subsequent to the formation of a microscopic pattern in the wavelength of a vacuum ultraviolet region from far ultraviolet rays. SOLUTION: First, monochromatic light 27 of a half-width of 30nm or narrower is irradiated on the entire surface of a substrate applied with a first layer resist film 26 in the wavelength of a vacuum ultraviolet region from far ultraviolet rays to modify the surface layer of the substrate. Then, a second layer resist film 29 is formed on the film 26 and the films 26 and 29 are selectively exposed with light 30 of a prescribed pattern to form photosensitized parts 31 and 32. A developing is performed to form a resist pattern of a shape that a first layer resist pattern 26' is bitten into the under part of a second layer resist pattern 29' and after a third film 33 is formed on this resist pattern, a third film pattern 33' equivalent to a terminal is obtained by a treatment using a developing solution.

3. 发明专利

JPH08262701A FORMATION OF RESIST PATTERN 失效
公开(公告)号：JPH08262701A
公开(公告)日：1996-10-11
申请号：JP6108595
申请日：1995-03-20
申请人： FUJITSU LTD
发明人： OIKAWA AKIRA , IKEDA YUMIKO , HATANAKA YASUNORI , MIYATA SHUICHI , KAIMOTO HIROKO
IPC分类号： G03F7/004 , G03F7/11 , G03F7/38 , H01L21/027
摘要： PURPOSE: To providee a method for forming resist patterns capable of preventing the occurrence of the skirting of a positive type resist near a substrate and the biting of the negative resist near the substrate when the resist patterns is formed by using a chemical amplification resist. CONSTITUTION: A ground surface film 2 consisting of BPSG is formed on the Si substrate 1 and a hydrophobic material film 3 consisting of a polymer or copolymer of amorphous polylefins or the deriv. thereof is formed thereon by spin coating to, for example, a thickness of 1μm; thereafter, the substrate 1 is preheated to 90 deg.C on a hot plate 10 and further, the positive type chemical amplification resist film 5 is applied thereon and is heated in the same manner as described above. The resist 5 is then exposed in patterns by using a KrF laser beam and is heat-treated at 90 deg.C on the hot plate 10 right thereafter. The resist is thereafter developed by an aq. TMAH soln., by which the exposed parts shown by the dotted lines of the resist film 5 are dissolved away. As a result, the occurrence of the skirting shape overhung with the resist near the substrate 1 is prevented.

4. 发明专利

JPH0580516A CHEMICALLY AMPLIFYING RESIST COMPOSITION AND FORMING METHOD OF RESIST PATTERN 失效
公开(公告)号：JPH0580516A
公开(公告)日：1993-04-02
申请号：JP23987291
申请日：1991-09-19
申请人： FUJITSU LTD
发明人： KAIMOTO HIROKO , TAKECHI SATOSHI , NOZAKI KOJI
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027
摘要： PURPOSE:To obtain a resist possible to form vertical cross section having no canopy like projection with extreme ultraviolet radiation as a light source in a chemically amplifying resist. CONSTITUTION:In the chemically amplifying resist constituted of a polymer containing a functional group, polar of which is changed by an acid catalyst, and of a photo acid generating agent, the chemically amplifying resist is made by introducing an alkali soluble group of one of hydroyl group, carboxyl group, methoxy group or acid anhydride into the polymer so that content X becomes to be in a region of 0

5. 发明专利

JPH07191463A RESIST AND PRODUCTION OF SEMICONDUCTOR DEVICE USING THE SAME 失效
公开(公告)号：JPH07191463A
公开(公告)日：1995-07-28
申请号：JP33335293
申请日：1993-12-27
申请人： FUJITSU LTD
发明人： KAIMOTO HIROKO
IPC分类号： G03F7/004 , C08F20/10 , C08F220/16 , C08K5/07 , G03F7/039 , H01L21/027
摘要： PURPOSE:To obtain a chemically amplifying resist having adamantyl groups having high dry etching resistance and high sensitivity for radiation of short wavelength by adding not only a photoacid producing agent but an aliphatic ester having carbonyl groups as a dissolution accelerator. CONSTITUTION:An aliphatic ester having carbonyl groups is added to a chemically amplifying resist containing adamantyl groups. The aliphatic ester consists of a malonic acid ester having a structural formula expressed by formula I. Or the aliphatic acid ester consists of a Meldrum's acid substituent having a structural formula expressed by formula II. The aliphatic acid ester is added by 5-25wt.% to the copolymer. This chemically amplifying resist consists of a copolymer of admantyl methacrylate and tert-butylmethacrylate and contains an acid producing agent which produces acid to induce the elimination reaction of the tert-butylmethacrylate.

6. 发明专利

JPH05297591A 失效
公开(公告)号：JPH05297591A
公开(公告)日：1993-11-12
申请号：JP9996792
申请日：1992-04-20
申请人： FUJITSU LTD
发明人： NOZAKI KOJI , KAIMOTO HIROKO
IPC分类号： G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve sensitivity and etching durability by applying a resist obtd. by mixing specified copolymers and an oxygen generating material on a substrate to be treated, selectively exposing the resist to radiation, and then developing with alkali. CONSTITUTION:The resist consists of a mixture of copolymers and an oxygen generating agent which produces oxygen by radiation. These copolymers are copolymers of N-cyclohexyl maleimide and bicyclo[2,2,1]hepto-5-ene-2-carboxylic acid ester having a repeating unit of formula. In formula, R is a t-butyl group or tetrahydropyranyl group. This resist is prepared by mixing an oxygen generating agent which produces oxygen by radiation and copolymers of N-cyclohexyl maleimide and bicyclo[2,2,1]hepto-5ene-2-carboxylic acid ester, and the obtd. resist is applied on a substrate to be treated, selectively exposed to radiation, and developed with alkali to form a resist pattern.

7. 发明专利

JPH0580515A RESIST COMPOSITION AND FORMING METHOD OF RESIST PATTERN 失效
公开(公告)号：JPH0580515A
公开(公告)日：1993-04-02
申请号：JP23987191
申请日：1991-09-19
申请人： FUJITSU LTD
发明人： KAIMOTO HIROKO , NOZAKI KOJI
IPC分类号： G03F7/004 , G03F7/027 , G03F7/029 , G03F7/039 , G03F7/20 , H01L21/027
摘要： PURPOSE:To form a high sensitive resist pattern excellent in dry etching resistance and resolution with extreme ultraviolet radiation as a light source in a forming method of the resist pattern. CONSTITUTION:The resist composition consists of a copolymer of 2-norbornen-2- sustituent expressed by the formula with acrylic ester and photo acid generating agent. The resist pattern is formed by selectively exposing the resist applied on a substrate to be treated and by developing with alkali after baking. In the formula, X is cyano group (-CN) or chlorine group (-Cl), R is tert-butyl group, dimethyl benzyl group or tetrahydropyranyl group.

8. 发明专利

JPH10303107A MANUFACTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR TREATING RESIST 失效
公开(公告)号：JPH10303107A
公开(公告)日：1998-11-13
申请号：JP11260297
申请日：1997-04-30
申请人： FUJITSU LTD
发明人： OTOGURO AKIHIKO , OIKAWA AKIRA , KAIMOTO HIROKO , IKEDA YUMIKO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To greatly improve the throughput of a semiconductor device manufacturing method by making the start of a second recipe possible simultaneously with the termination of a first recipe without any waiting time by setting a second group of heat-treating sections of the temperature condition required for the second recipe at the point when the first recipe has been completed. SOLUTION: The temperature rise of heat-treating sections HP2 and HP3 is started in the step S25 and a first recipe 1 is executed when the temperatures of the sections HP1 and HP2 respectively reach T1PB and T2EB in a step S26. When the recipe 1 ends, a second recipe 2 is executed in a step S27. At the point of starting the step S27, however, the temperatures of the sections HP2 and HP3 which are started to rise in the step S25 respectively reach T2PB and T2EB. Therefore, the second recipe 2 can be started immediately without any waiting time in executing the recipe 2 in the step S27. Therefore, the throughput of a semiconductor device manufacturing method can be improved greatly.

9. 发明专利

JPH08190193A CHEMICAL AMPLIFICATION TYPE RESIST 失效
公开(公告)号：JPH08190193A
公开(公告)日：1996-07-23
申请号：JP321795
申请日：1995-01-12
申请人： FUJITSU LTD
发明人： KAIMOTO HIROKO , OIKAWA AKIRA , MIYATA SHUICHI , HATANAKA YASUNORI , IKEDA YUMIKO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE: To enhance the stability of the resist after exposure to postbacking without impairing the resolution of a pattern by adding crown ether compound to a base polymer. CONSTITUTION: The chemical amplification type resist is composed of a mixture of a base polymer, having a releasable protective group and an adamantyl skeleton or a hydroxystyrene skeleton, and an acid photogenerator, and this resist is formed by adding the crown ether compound having a structural formula, and it is embodied by the structural formula (A) 12-crown-4 and that of a complex (B) having a cation K incorporated in it (X' being a halogen ion), and the addition of this crown ether compound into the chemical amplification type resist permits the obtained resist to incorporate cations in it and to prevent deactivation and to disperse the hydrophilic acid photogerator uniformly into the hydrophobic base polymer.

10. 发明专利

JPH06324494A PATTERN FORMING MATERIAL AND FORMATION OF PATTERN 失效
公开(公告)号：JPH06324494A
公开(公告)日：1994-11-25
申请号：JP11047193
申请日：1993-05-12
申请人： FUJITSU LTD
发明人： TAKECHI SATOSHI , TAKAHASHI MAKOTO , KAIMOTO HIROKO
IPC分类号： C09K3/00 , C23F1/00 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE:To provide the pattern forming material capable of maintaining the desired dimensional accuracy of resulted patterns even after resting over a long period of time before baking after exposing and the method for forming the pattern. CONSTITUTION:A copolymer contg. a unit contg. an arom. ring having any of a condensed ring having polycyclic arom. or at least one arom. rings or alicyclic, branched alkyl or halogen as a substituent or a unit from acrylic acid or methacrylate deriv. contg. an arom. cyclic group in its ester group and a unit from a polymerizable monomer contg. a photosensitive group is used as a resist together with a compd. which generates an acid by irradiation with radiations.

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