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1. 发明专利

JPS5998586A GLAZED CERAMIC SUBSTRATE 失效
公开(公告)号：JPS5998586A
公开(公告)日：1984-06-06
申请号：JP20750382
申请日：1982-11-29
申请人： FUJITSU LTD , CENTRAL GLASS CO LTD
发明人： TANMACHI HARUO , TERAJIMA MINORU , HARA TOSHITO , INOUE KOUZOU , MOURI YOSHIO , IKEDA TSUTOMU , SANO KINJI
IPC分类号： H05K1/03 , B32B18/00 , C04B41/86

2. 发明专利

JPH02218792A CUTTING PROCESSING OF ALUMINUM ALLOY MATERIAL AND ALUMINIUM CONTAINER MADE THEREFROM 失效
公开(公告)号：JPH02218792A
公开(公告)日：1990-08-31
申请号：JP9363489
申请日：1989-04-13
申请人： FUJITSU LTD
发明人： MIYAMOTO NOBUO , HARA TOSHITO , YODA HIDEAKI , SATO MASUJI , YAMAGOSHI SHIGENOBU
IPC分类号： B23Q11/10 , B65D1/12 , C10M105/12 , C10N40/22
摘要： PURPOSE:To reduce film thickness of surface oxide film formed during cutting processing and to actualize a container for extremely high vacuum by using 2-propanol as a cutting liquid. CONSTITUTION:In cutting processing of aluminum alloy material blended with several-10% copper, Si, Mn, Mg, etc., 2-propanol as a cutting liquid (131.7 deg.C boiling point). 2-Propanol is more inexpensive than ethanol, has less smell than 2-butanol and an oxide film layer having low content of carbon (for example, about 1/2 that of ethanol) is formed.

3. 发明专利

JPS6112788B2 JPS6112788B2 - 失效
公开(公告)号：JPS6112788B2
公开(公告)日：1986-04-10
申请号：JP11124380
申请日：1980-08-13
申请人： Fujitsu Ltd
发明人： NAKA TOSHIAKI , SUGANO TATEO , TERAJIMA MINORU , HARA TOSHITO
IPC分类号： B41J2/335 , B41J2/345
CPC分类号： B41J2/345

4. 发明专利

JPS5943868B2 JPS5943868B2 - 失效
公开(公告)号：JPS5943868B2
公开(公告)日：1984-10-25
申请号：JP16813079
申请日：1979-12-26
申请人： Fujitsu Ltd
发明人： YAMADA FUMIAKI , TERAJIMA MINORU , FUJIMORI MASATOSHI , HARA TOSHITO
IPC分类号： H04N1/028 , H04N1/193
CPC分类号： H04N1/1931

5. 发明专利

JPS5951421A Method of producing lead switch 失效
标题翻译：生产铅开关的方法
公开(公告)号：JPS5951421A
公开(公告)日：1984-03-24
申请号：JP14695683
申请日：1983-08-11
申请人： Fujitsu Ltd
发明人： TOMIOKA HIROSHI , OGUMA TOSHIROU , HARA TOSHITO
IPC分类号： H01H11/04

6. 发明专利

JPS5811050B2 失效
公开(公告)号：JPS5811050B2
公开(公告)日：1983-03-01
申请号：JP16403178
申请日：1978-12-25
申请人： FUJITSU LTD
发明人： TANAKA AKIRA , KUROSAWA KYOSHI , TOMIOKA HIROSHI , HARA TOSHITO
IPC分类号： H01H51/28 , H01H1/66

7. 发明专利

JPS57118659A Chip parts mounted electronic circuit 失效
标题翻译：芯片安装电子电路
公开(公告)号：JPS57118659A
公开(公告)日：1982-07-23
申请号：JP437981
申请日：1981-01-14
申请人： Fujitsu Ltd
发明人： KOYAMA MASATAKA , TERAJIMA MINORU , FUJIMORI MASATOSHI , HARA TOSHITO
IPC分类号： H01L23/52 , H01L21/60 , H01L23/13
CPC分类号： H01L23/13 , H01L24/82 , H01L2224/18 , H01L2224/24137 , H01L2924/14 , H01L2924/00012
摘要： PURPOSE:To miniaturize and cut down the cost of the titled electronic circuit by a method wherein a circuit element is buried in the first insulating layer on an insulating substrate in such a manner that its plane surface is evenly positioned, and a desired connection is performed on the surface covered by the second insulating layer using a film conductor wiring. CONSTITUTION:A thermoplastic insulating layer 2 is deposited on the insulating substrate 1. The insulating layer 2 is softened by heating, mounting circuit elements 3, 4 and 5 which were turned into chips are pushed in and buried at the prescribed position on the insulating layer, and have the electrode-formed surfaces 6-8 of the chips 3-5 come in almost even to the surface 9 of the insulating layer 2. An insulating layer 10, covering the entire surfaces of 6-8 and 9, is provided. Then, the surface of the electrodes is exposed by performing a selective etching on the insulating layer 10, and between each of the electrodes are connected by a conductor pattern 13. Accordingly, a hybrid integrated circuit can be miniaturized and the cost thereof can be cut down.
摘要翻译：目的：通过以下方式使电子电路的成本小型化和降低成本：其中电路元件以绝对基板上的第一绝缘层的方式被以其平面表面均匀定位的方式被埋置在第一绝缘层中，并且进行期望的连接在使用薄膜导体布线的由第二绝缘层覆盖的表面上。构成：在绝缘基板1上淀积热塑性绝缘层2.绝缘层2通过加热而软化，安装成芯片的电路元件3,4和5被推入并埋在绝缘层上的规定位置并且芯片3-5的电极形成表面6-8几乎均匀地到达绝缘层2的表面9.设置覆盖6-8和9的整个表面的绝缘层10。然后，通过对绝缘层10进行选择性蚀刻来暴露电极的表面，并且通过导体图案13连接每个电极之间。因此，可以使混合集成电路小型化并且可以削减成本下。

8. 发明专利

JPS5783052A Manufacture of selenium thin filn diode 失效
标题翻译：镍薄膜二极管的制造
公开(公告)号：JPS5783052A
公开(公告)日：1982-05-24
申请号：JP15812480
申请日：1980-11-12
申请人： Fujitsu Ltd
发明人： KOYAMA MASATAKA , TASAI KUNIHIKO , TERAJIMA MINORU , HARA TOSHITO
IPC分类号： B41J2/345 , H01L27/12 , H01L29/267 , H01L29/861
CPC分类号： H01L29/267
摘要： PURPOSE:To increase the tight-adhesive strength, to prevent the short-circuit and to increase the yielding rate for the subject diode by a method wherein, in the process of diode formation where Ni, Se and Cd are successively laminated and a heat-treatment is performed, a thin Mn film is interposed on the substrate providing an Ni lower electrode. CONSTITUTION:After the Ni lower electrode 11' has been provided on an alumina or glass substrate 10, an Mn film 12 of 50A or thereabouts is mask-evaporated. Then, after an SeTe film 13 and an SeI film 14, as Se film, and a CdSn film 15, as Cd film, have been successively mask-evaporated, a heat-treatment is performed at 200-350 deg.C, and an N type CdSe diffusion film is formed by performing a mutual diffusion of a film 14 and a film 15. Subsequently, an NiCr- Au film 16 is formed on the whole surface, the upper electrode 17 and the lower electrode 18 are formed by performing a pattering. The tight-adhesiveness of the Ni film and the substrate can be improved, since the Mn film 12 and the Se are liable to make ohmic contacted with each other. Also, as a uniformly crystallized Se is obtained with the Mn functioning as a nucleus, the short-circuit generating when the upper electrode is formed can be prevented and the yielding rate of the diode can also be improved.
摘要翻译：目的：为了提高紧密粘合强度，为了防止短路并提高主体二极管的屈服率，可以采用以下方法：在连续层压Ni，Se和Cd的二极管形成过程中，进行处理，在提供Ni下电极的基板上插入薄的Mn膜。构成：将Ni下电极11'设置在氧化铝或玻璃基板10上之后，将50A左右的Mn膜12掩模蒸镀。然后，在作为Se膜的SeTe膜13和SeI膜14，作为Cd膜的CdSn膜15被依次掩模蒸发之后，在200-350℃进行热处理，通过进行膜14和膜15的相互扩散来形成N型CdSe扩散膜。随后，在整个表面上形成NiCr-Au膜16，上电极17和下电极18通过执行模仿。由于Mn膜12和Se易于彼此欧姆接触，所以可以提高Ni膜和基板的紧密粘合性。此外，由于以Mn作为核的方式获得均匀结晶的Se，因此可以防止形成上部电极时的短路产生，并且还可以提高二极管的屈服比。

9. 发明专利

JPS5773563A Image sensor drive system 失效
标题翻译：图像传感器驱动系统
公开(公告)号：JPS5773563A
公开(公告)日：1982-05-08
申请号：JP14898380
申请日：1980-10-24
申请人： Fujitsu Ltd
发明人： YAMADA FUMIAKI , SATOU MASUJI , TERAJIMA MINORU , HARA TOSHITO
IPC分类号： H04N1/028 , H04N1/193 , H04N5/335
CPC分类号： H04N1/1931
摘要： PURPOSE:To read in the number of photoelectric effect elements in a high speed continuously, by overlapping and applying a group signal pulse of the group to be read next, at the start of read-in of photoelectric effect element in the preceding group sequentially. CONSTITUTION:A group signal pulse to a group G1a is applied at the start of the initial period, an analog switch AS is started at the point of time of start of the next period, and the read-in of the output of the photoelectric effect element belonging to the group G1a is startd. At the start of this period, the group signal pulse to the group G1b to be read next is applied. Thus, the group signal pulse of the group to be read next is applied through overlapping at the start of read-in of the photoelectric effect element in the preceding group sequentially.
摘要翻译：目的：连续地读取高速光电效应元件的数量，通过重叠和施加要接下来要读取的组的组信号脉冲，顺序地在先前组中的光电效应元件的读入开始。构成：在初始周期开始时施加到组G1a的组信号脉冲，在下一周期开始的时刻开始模拟开关AS，并且读取光电效应的输出属于G1a组的元素是startd。在该周期的开始时，施加到接下来要读取的组G1b的组信号脉冲。因此，接下来要读取的组的组信号脉冲依次在前一组中的光电效应元件的读入开始时通过重叠来施加。

10. 发明专利

JPS5769782A Thin film diode and manufacture thereof 失效
标题翻译：薄膜二极管及其制造
公开(公告)号：JPS5769782A
公开(公告)日：1982-04-28
申请号：JP14654680
申请日：1980-10-20
申请人： Fujitsu Ltd
发明人： KOYAMA MASATAKA , TERAJIMA MINORU , FUJIMORI MASATOSHI , HARA TOSHITO
IPC分类号： H01L21/329 , H01L21/20 , H01L29/861
CPC分类号： H01L29/861
摘要： PURPOSE:To form a thin film diode having high reverse withstand voltage and favorable characteristic of forward directional sharp rising up by a method wherein the diode is constituted by converting an Si thin film provided on a substrate into single crystal. CONSTITUTION:After an Al electrode 2 containing Si of 1% is provided on the substrate 1 of glass, etc., and is patternized, an N type Si thin film is evaporated, and after selective etching is performed it is annealed by a laser beam to form an N type Si layer 4 being converted into single crystal, then P type Si is evaporated thereon, and after it is patternized, laser annealing is performed to form a P type Si layer 5 being converted into sigle crystal, and finally an Al electrode 6 containing Si of 1% is provided and is patternized to form the thin film diode. Accordingly the thin film diode having high reverse withstand voltage and favorable characteristic of forward directional sharp rising-up can be formed, and plural elements having the same characteristic can be formed at the same time.
摘要翻译：目的：通过将基板上设置的Si薄膜转换成单晶而构成二极管的方法，形成具有高反向耐受电压的薄膜二极管和正向锐利上升的良好特性。构成：在玻璃等的基板1上设置含有1％的Si的Al电极2，并进行图案化，使N型Si薄膜蒸发，并且在进行选择性蚀刻之后，通过激光束为了形成转变为单晶的N型Si层4，然后在其上蒸发P型Si，在图形化之后，进行激光退火，形成转变为S晶体的P型Si层5，最后形成Al 提供含有1％的Si的电极6并且被图案化以形成薄膜二极管。因此，可以形成具有高反向耐受电压和良好的正向锐利上升特性的薄膜二极管，并且可以同时形成具有相同特性的多个元件。

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