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    • 2. 发明专利
    • MULTIPLIED OSCILLATION CIRCUIT
    • JPH0823229A
    • 1996-01-23
    • JP15707594
    • 1994-07-08
    • FUJITSU LTD
    • SASAKI AKIOTANAKA SADANORIHAGA YOSHINOBUUEDA HIROKAZUKISHIGAMI KAZUNARI
    • H03B5/12H03B5/18
    • PURPOSE:To improve power efficiency of a multiplied oscillation circuit by attaining an operation which oscillates by the frequency of a fundamental wave and an operation which amplifies the desired one of those higher frequency waves generated by the oscillating operation with a single transistor. CONSTITUTION:This oscillation circuit can perform both oscillating and amplifying operations by a single transistor TR Q1 in Colpitts oscillation form. Thus the 1st and 2nd circuit parts 12a and 13a consisting of the concentrated constant elements are connected to the emitter and the collector of the TR Q1. Then the output of a doubled frequency wave is taken out of the collector. Each of both parts 12a and 13a consists of a coil and a capacitor, and the tuning frequency of parts 12a and 13a are set at f0 and 2f0 respectively. Thus the emitter and collector have high and low impedances respectively with the frequency f0 and vice versa with the frequency 2f0. In such a constitution, a collector-grounded Colpitts oscillator is secured to a basic wave of frequency f0 and an emitter-grounded amplifier is secured to the double wave respectively. Then the doubled frequency wave existing at the base of the TR Q1 is amplified and outputted from the collector.
    • 5. 发明专利
    • HIGH FREQUENCY SWITCH
    • JPH09139601A
    • 1997-05-27
    • JP29585695
    • 1995-11-14
    • FUJITSU LTD
    • HAGA YOSHINOBUUEDA HIROKAZUKAWAI SHINICHISAITO MASAAKI
    • H01P1/15H03K17/76H04B1/44
    • PROBLEM TO BE SOLVED: To provide the high frequency switch of low insertion loss and high isolation by forming this switch so that a parallel PIN diode may likely be released when the switch is turned on but it may likely be short-circuited when the switch is turned off. SOLUTION: PIN diodes D1 and D2 are serially and parallelly arranged, and the parallel PIN diode D2 is connected by the line of λ/4 use frequency. Since when the switch is turned on, the respective PIN diodes D1 and D2 are turned on, a transmission line is turned into through state and the top end of the λ/4 line is short-circuited, the λ/4 line 4 on the side of the transmission line 1 is opened, and only the insertion loss of the serial PIN diode D1 is observed. When the switch is turned off, the respective PIN diodes D1 and D2 are turned off, the serial PIN diode D1 is turned into high resistance state, and the top end of the λ/4 line is opened at such a time. Therefore, the λ/4 line on the side of the transmission line 1 is short-circuited, and the high isolation state is provided by such an attenuation factor.
    • 6. 发明专利
    • MICROWAVE MIXER CIRCUIT
    • JPH0738456A
    • 1995-02-07
    • JP18053893
    • 1993-07-22
    • FUJITSU LTD
    • HAGA YOSHINOBU
    • H03D7/12H04B1/26
    • PURPOSE:To obtain a mixer circuit capable of adjusting dispersion in the characteristic of a FET by adopting only one polarity of a DC bias deciding an operating point of the FET. CONSTITUTION:A DC bias voltage -VG is applied to a gate G of a FET together with a radio signal through an impedance matching circuit 11 and a local carrier LOin is inputted directly to a drain D through a filter 22 and an impedance matching circuit 23. The FET is operated in an unsaturation region of a drain current Id so that the local carrier is rectified and a self- rectifier current flows to a source S connecting to ground from the drain. The dispersion in the statistic characteristic of the FET is compensated by changing a sum (VB+VD-VG) of a built-in voltage VB of the Rate deciding an intermediate frequency component IdIF included in a drain current Id changed through the dispersion, a DC bias voltage +VD and a DC bias voltage -VG of the Sate G through the chance in the DC bias voltage -VG of the gate G.