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1. 发明专利

JP2004095884A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2004095884A
公开(公告)日：2004-03-25
申请号：JP2002255412
申请日：2002-08-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OKUNO MASAKI , MOMIYAMA YOICHI , AOYAMA ATSUYUKI
IPC分类号： H01L21/28 , H01L21/8238 , H01L27/092
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a pMOS transistor and an nMOS transistor on the same substrate, wherein depletioning of a gate electrode is suppressed to obtain a sufficient on-current.
SOLUTION: This arrangement contains the steps of: forming a gate insulating film 4 on a substrate 1; depositing a first polysilicon film 5 doped with a p-type impurity on the entire surface; depositing a second polysilicon film 6 non-doped on the entire surface; patterning the first and second polysilicon films 5, 6 in a gate electrode shape; selectively ion-implanting the p-type impurity in a pMOS transistor formation region on the substrate 1; selectively ion-implanting an n-type impurity in an nMOS transistor formation region on the substrate 1; and activating the impurity in the gate electrode by a heat treatment.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种在同一衬底上制造具有pMOS晶体管和nMOS晶体管的半导体器件的方法，其中抑制栅电极的耗尽以获得足够的导通电流。解决方案：该布置包括以下步骤：在基板1上形成栅极绝缘膜4; 在整个表面上沉积掺杂有p型杂质的第一多晶硅膜5; 在整个表面上沉积未掺杂的第二多晶硅膜6; 以栅电极形状图案化第一和第二多晶硅膜5,6; 在衬底1上的pMOS晶体管形成区域选择性地离子注入p型杂质; 在衬底1上的nMOS晶体管形成区域中选择性地离子注入n型杂质; 并通过热处理激活栅电极中的杂质。版权所有（C）2004，JPO

2. 发明专利

JPH04146620A METHOD OF FLATTENING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH04146620A
公开(公告)日：1992-05-20
申请号：JP26932690
申请日：1990-10-09
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065
摘要： PURPOSE:To flatten the surface of a semiconductor substrate using a dry-type method by exposing the semiconductor to HF gas, H2-diluted F2 gas or the mixed gas containing these gases. CONSTITUTION:An Si wafer 10 is arranged as a semiconductor substrate on the substrate retaining and heating mechanism located in a stainless steel vacuum vessel 1. Especially, the heating mechanism is provided on the reverse side of the retaining mechanism as a heater 11. Then, the mixed gas consisting of F2 gas of 1wt.%, H2 gas of 50wt.% and Ar gas of 49wt.% of 1/min. in total quantity is introduced into the vacuum vessel 1 from a gas introducing system 2 at the normal pressure, and at the same time, ultraviolet rays are made to irradiate for one hour on the mixed gas and the Si wafer 10 through the immediately of a quartz window using a mercury lamp 12. As a result, the coarseness in vertical direction on the Si wafer surface can be flattened from 0.8mm to 0.6mm in RMS(Root Mean Square).

3. 发明专利

JPH02238632A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02238632A
公开(公告)日：1990-09-20
申请号：JP5910689
申请日：1989-03-10
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI
IPC分类号： H01L29/73 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/331 , H01L29/16 , H01L29/737
摘要： PURPOSE:To reduce an interface level at a heterointerface and to realize a high gain by a method wherein a dangling bond existing at the heterointerface between a base layer and an emitter layer is terminated by using atoms or molecuales and is made inert. CONSTITUTION:When an emitter layer 6 whose lattice constant is different from a lattice constant of a base layer 5 is grown on the base layer 5, an imbalance in the number of atoms between the base layer 5 and the emitter layer 6 is caused at their heterointerface; coupling hands of either of them are left over; a so-called dangling bond is generated. Atoms or molecules 7 which terminate the dangling bond are laid at the heterointerface between the base layer 5 and the emitter layer 6; when the dangling bond is terminated, the dangling bond can be made inert. Thereby, the dangling bond is reduced; a recombination current is reduced; a high gain and a superhigh speed can be achieved.

4. 发明专利

JPH03147322A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03147322A
公开(公告)日：1991-06-24
申请号：JP28540189
申请日：1989-11-01
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To obtain a clean surface by a method wherein a semiconductor substrate whose silicon surface has been cleaned by using a fluorine-based gas is exposed to a gas containing ammonia so that a spontaneous oxide film and residual fluorine atoms on the surface of the semiconductor substrate can be removed. CONSTITUTION:A spontaneous oxide film on the surface of a semiconductor substrate 1 is removed by a first process to expose the substrate to fluorine atoms, at this time, the fluorine atoms are left on the surface. In a second process to expose the semiconductor substrate to a gas containing ammonia, the ammonia is reated with the residual fluorine atoms, and compounds such as NH4F, NH2F and the like are produced; the compounds are separated into a gaseous phase. Thereby, a clean semiconductor surface is obtained. The first and second processes are executed at room temperature and can reach their aim. However, in order to achieve the aim in a short time, the semiconductor substrate 1 is irradiated with ultraviolet rays during the first process or the second process.

5. 发明专利

JPH01238111A MANUFACTURE OF SILICON CARBIDE SEMICONDUCTOR FILM 失效
公开(公告)号：JPH01238111A
公开(公告)日：1989-09-22
申请号：JP6611288
申请日：1988-03-18
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI , SUGII TOSHIHIRO
IPC分类号： H01L21/20 , H01L21/324
摘要： PURPOSE:To grow an SiC film of high quality by depositing an amorphous SiC film onto an silicon substrate and forming a single crystal SiC film or a polycrystalline SiC film through heat treatment. CONSTITUTION:An amorphous SiC film 2 is deposited onto an silicon substrate 1, and a crystalline SiC film 3 (a single crystal SiC film or a polycrystalline SiC film) is shaped through heat treatment. For deposit the amorphous SiC film onto the surface of the silicon substrate, the amorphous SiC film must be applied onto the silicon substrate 1 at a low temperature such as normal temperature and ultra-quenched. Consequently, a physical deposition method such as an evaporation method, a sputtering method, etc., must be employed, not a chemical deposition method, in which a compound is thermally decomposed and applied, such as a CVD method. Accordingly, the SiC film, a heating temperature of which is lowered, its composition is also controlled easily, its quality of a crystal is improved and having few crystal defects, can be grown.

6. 发明专利

JP2001068662A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001068662A
公开(公告)日：2001-03-16
申请号：JP24502099
申请日：1999-08-31
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI , ARIMOTO HIROSHI
IPC分类号： H01L29/78 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/43 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To make it possible to stably form a polycrystalline semiconductor layer of a small grain size by a method wherein, after a thin amorphous semiconductor layer is formed, the amorphous semiconductor layer is heat-treated. SOLUTION: The surface of an Si substrate 1 is thermooxidized and a gate insulating film 5 is formed on the surface of the substrate 1. After the film 5 is formed, an amorphous Si layer 6a is deposited on the film 5. The film thickness of the layer 6a is formed in a thickness of about 5 to 30 nm. After the layer 6a is deposited, a heat treatment of the layer 6a is performed. By this heat treatment, the layer 6a is turned into a polycrystalline Si layer 6b and the layer 6b is formed in a grain size of about 20 nm or smaller. A polycrystalline Si layer 7 is deposited on the layer 6b. As the layer 6b of the grain size of about 20 nm or smaller is formed on the substrate, the layer 7 also has the grain size of about 20 nm or smaller when the layer 7 is formed on the layer 6b. In such a way, a polycrystalline semiconductor layer of a small grain size can be stably formed.

7. 发明专利

JPH08316466A MOS SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08316466A
公开(公告)日：1996-11-29
申请号：JP12099595
申请日：1995-05-19
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI
IPC分类号： H01L29/78 , H01L21/318
摘要： PURPOSE: To improve the deterioration resistance of hot carrier and dielectric breakdown of a gate insulating film by a method wherein a gate insulating film, consisting of a silicon oxide film, is formed under the center part of a gate electrode, and the gate insulating film, consisting of a silicon nitride film or a silicon oxynitride film, is formed under the circumferential part of the gate electrode. CONSTITUTION: A gate insulating film 3 is formed by thermally oxidizing the surface of a silicon substrate 1, a polysilicon layer is formed thereon, and gate electrodes 3 and 4 are formed by patterning. Then, a silicon nitride film 5 is formed on the surface of the gate electrode 4 and the silicon substrate by heating them in ammonia gas, and the gate insulating film 3 is converted to a silicon nitride film 6. Also, it is converted to a silicon oxynitride film 7 by heating it in oxygen gas. Then, a silicon oxide film is deposited on the silicon substrate 1, and a side wall 8 is formed by conducting anisotropic etching. Also, impurity ions are implanted after formation of the silicon oxynitride film 7 and the side wall 8.

8. 发明专利

JPH05160085A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05160085A
公开(公告)日：1993-06-25
申请号：JP32720791
申请日：1991-12-11
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To enable a surface treatment of a semiconductor substrate to be carried, where a natural oxide film is removed from the surface of the semiconductor substrate and the surface of the substrate is cleaned and flattened. CONSTITUTION:In a process of manufacturing semiconductor device, a semiconductor substrate 1 whose surface is treated is introduced into a reaction chamber 3, the mixed gas of two or more kinds of material gas is introduced into the reaction chamber 3, the material gases are made to react with each other to produce a new compound, active material produced in a reaction process and/or compound of reaction product generated in a reaction process is made to act on the surface of the semiconductor substrate to carry out a surface treatment. Two or more kinds of material gas introduced into the reaction chamber 3 are irradiated with light to promote reaction. Or, two or more kinds of material gas introduced into the reaction chamber 3 are irradiated with charged particles to promote reaction.

9. 发明专利

JPH0529234A EPITAXIAL CROWING METHOD 失效
公开(公告)号：JPH0529234A
公开(公告)日：1993-02-05
申请号：JP18626191
申请日：1991-07-25
申请人： FUJITSU LTD
发明人： NAMIKATA HIROSHI , AOYAMA ATSUYUKI
IPC分类号： C30B25/16 , C30B30/00 , H01L21/205
摘要： PURPOSE:To restrain the diffusion of doped impurities thereby enabling an indefectible and excellent epitaxial film to be formed by a method wherein the epitaxial film is repeatedly grown both at the temperature whereat the doped impurities are not to be diffused and at the other temperature whereat an active species decomposed in vapor phase can sufficiently move on a substrate. CONSTITUTION:A thin film signal crystal is vapor epitaxially grown on a substrate both at the set up temperature TL whereat doped impurities are not to be diffused and at the other set up temperature TH whereat an active species decomposed in vapor phase can sufficiently move on a substrate. Besides, the times tL, tH to maintain respective set up temperatures can easily be decided by checking the crystal produced by a single experiment using e.g. a transmission type electron microscope. Furthermore, when a substrate is irradiated with ultraviolet ray during the epitaxial film growing step, the growing time at the lower set up temperature TL can be extended further lowering the higher set up temperature TH.

10. 发明专利

JPH0483330A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0483330A
公开(公告)日：1992-03-17
申请号：JP19877190
申请日：1990-07-25
申请人： FUJITSU LTD
发明人： AOYAMA ATSUYUKI
IPC分类号： H01L21/30 , H01L21/027
摘要： PURPOSE:To enable all kinds of resists which are adhered to be eliminated without giving damage to a substrate by allowing the substrate where resist is adhered to be exposed gas which includes halogen which is excited by ultra- violet rays. CONSTITUTION:When a substrate 1 where a carbon resist 2a or a silicon resist 2b is adhered to is exposed to gas which includes halogen which is excited by ultra-violet rays 3, the excited halogen gas attacks the carbon resist 2a or the silicon resist 2b and eliminate it from a surface of the substrate 1 completely as a halide such as CF4 and CiF4. Also, no damage is produced since there is not a great energy which damages a surface of the substrate 1. When a mixed gas of a halogen 4 and an oxygen 5 is used, the oxygen 5 operates effectively for eliminating the carbon resist 2a and the halogen 4 operates effectively for eliminating the silicon resist 2b, thus enabling nearly all resists to be eliminated effectively.

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