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1. 发明专利

JPH05291291A 失效
公开(公告)号：JPH05291291A
公开(公告)日：1993-11-05
申请号：JP8737992
申请日：1992-04-09
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/784
摘要： PURPOSE:To provide a resin sealed type MOS-FET comprising a variable resistor for regulating noise reduction of a switching circuit through simple operation. CONSTITUTION:In a resin sealed type MOS-FET wherein a MOS-FET chip l is mounted on a die pad 2 of a lead frame and a gate electrode, a source electrode and external lead terminals of the chip are internally connected and sealed with resin, a variable resistor 8 is serially inserted between the gate electrode and external lead 3 of the chip in combination with a substrate 9 for internal wiring and these are integrally sealed by resin so that an adjusting part 8a of the variable resistor 8 is exposed to the outside of a resin package 7. Under the condition that such resin sealed type MOS-FET is comprised within the switching circuit, the adjusting part 8a is operated to adjust a noise level due to the switching operation of MOS-FET to the minimum level.

2. 发明专利

JPH08191115A RESIN SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08191115A
公开(公告)日：1996-07-23
申请号：JP236395
申请日：1995-01-11
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L23/28 , H01L21/56
摘要： PURPOSE: To provide a resin sealed semiconductor device having a shielding function for radiating noise from itself by a simple structure for a target semiconductor device used as a switching device. CONSTITUTION: Within a resin sealed semiconductor device wherein a semiconductor chip 1 is mounted on a frame 2 and the peripheral region is sealed with a mold resin 5, a radiating noise abating metallic shield plate 6 is arranged on the rear surface side of the frame 2 at an insulating interval to be integrally resin-molded while an earth terminal 6a is led out of the shield plate 6 so that the noise in the switching time may be released through the electrostatic capacitance between the frame 2 and the shield plate 6 to abate the radiating noise.

3. 发明专利

JPH06132424A SWITCHING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06132424A
公开(公告)日：1994-05-13
申请号：JP27758692
申请日：1992-10-16
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L23/06 , H01L23/28
摘要： PURPOSE:To sharply reduce a noise generated by a switching operation without spoiling the intrinsic switching characteristic of a semiconductor device. CONSTITUTION:This semiconductor device is constituted in such a way that the assembly of a switching semiconductor element 1 and a lead frame 2 is sealed with a molding resin 3, that its circumference is covered with a shielding metal case 4 and that a grounding terminal 4a is installed in the metal case. A noise generated by a switching operation is made to escape to the ground side through an electrostatic capacity by the metal case and through the metal case so as to prevent that the noise is propagated to the circumference.

4. 发明专利

JPH08321601A MOS SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08321601A
公开(公告)日：1996-12-03
申请号：JP12603995
申请日：1995-05-25
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L29/78
摘要： PURPOSE: To avoid the field concentration in an angle part of a cell structure FET wherein the second conductivity type channel region with a well region with high impurity concentration formed therein, the first conductivity type source region formed on the surface region of the first conductivity type semiconductor substrate, furthermore, a MOS structure formed on the surface for increasing the breakdown strength. CONSTITUTION: A p-channel regions 3 having a P well region 2 and an n source region 4 has a striped shape to connect the end parts with each other removing any protrusions excluding in the outermost peripheries. Thus, the breakdown strength can be increased since the conventional field concentration in the protrusions are removed. Accordingly, a crystal of lower specific resistance to the same rated breakdown strength can be used thereby enabling the on- resistance to be lowered.

5. 发明专利

JPH08227993A MOS SMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08227993A
公开(公告)日：1996-09-03
申请号：JP95895
申请日：1995-01-09
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIHIRA TATSUHIKO , NISHIMURA TAKEYOSHI , KOBAYASHI TAKASHI , ARAI TOSHIHIRO
IPC分类号： H01L29/06 , H01L29/08 , H01L29/10 , H01L29/749 , H01L29/78
摘要： PURPOSE: To make the avalanche resistance higher by making the distance between the corners of the channel regions of two cell constructions opposed with their corners facing each other, smaller than the distance between the sides of the channel regions of two cell constructions opposed with their sides facing each other. CONSTITUTION: On the surface layer of an n type substrate 1, cell constructions each with four main sides having an n source region 4 and a p well region 2 in a square p channel region 3 are arranged approaching the corners nearest. Namely, the distance between the corners is smaller than the distance between the sides of two cell constructions opposes with their sides facing each other. As a result, the corners of the p channel regions 3 of the two cell constructions are nearest to each other. Accordingly, a depletion layer spreading from a p channel region 3 at the time of voltage application is easily linked to a depletion layer spreading from an adjoining p channel region 3, and the withstand voltage does not lower at the corners of the cell constructions, and the avalanche resistance becomes higher.

6. 发明专利

JPH0738027A RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0738027A
公开(公告)日：1995-02-07
申请号：JP15593493
申请日：1993-06-28
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L23/28 , H01L23/29 , H01L23/31 , H01L23/48
摘要： PURPOSE:To improve moisture resistance by covering the whole surface region of a semiconductor chip with junction coating resin irrespective of variations of viscosity by mounting the semiconductor chip in a recess previously formed in a metal substrate and putting the resin having fluidity such that it fills out the recess. CONSTITUTION:There is previously formed by pressing a recess 2a in a die pad 2 of a lead frame 1 into the depth where a semiconductor chip 4 is buried. The semiconductor chip 4 is mounted in the recess 2a and the recess 2a is filled with junction coating resin 7 so as to completely cover the surface of the semiconductor chip 4. The junction coating resin 7 is imparted with proper fluidity by adding a solvent thereto, and in the assembled state where the semiconductor chip 4 is mounted in the recess 2a in the die pad 2 and a wire 5 is bonded to the semiconductor chip the resin 7 is potted from the upper portion so as to satisfy the recess 2a for coating of the surface of the semiconductor chip 4.

7. 发明专利

JPS6151851A Accessory insulator for molded type semiconductor element 失效
标题翻译：用于成型型半导体元件的附件绝缘子
公开(公告)号：JPS6151851A
公开(公告)日：1986-03-14
申请号：JP17385684
申请日：1984-08-21
申请人： Fuji Electric Co Ltd
发明人： ARAI TOSHIHIRO
IPC分类号： H01L23/28 , H01L23/31
CPC分类号： H01L23/3107 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To mount a semiconductor element easily to a heat dissipating plate without displacing relative positions by forming an insulator electrically insulating a heat sink for the element and the heat dissipating plate to a box shape having a side plate section surrounding the side surface of the element. CONSTITUTION:A prepreg material in which glass cloth or nonwoven fabric is impregnated with an epoxy group or polyester group resin and brought to a semirigid state is compressed, heated and molded, thus manufacturing a box- shaped insulator 30. The insulator 30 has a bottom plate section 31 held by the exposed surface of a heat sink 3 and a heat dissipating plate 6, side plate sections 32, a turn-up section 33 in which one of side plates is turned up so as to cover the exposed surface of the heat sink 3, and a cylindrical section 34 connected to a fitting hole 3A for the heat sink 3. The heat sink 3 and the heat dissipating plate 6 are insulated by the bottom plate section 31, and an element 1 and the heat dissipating plate 6 are insulated electrically. The side plate sections 32 are broght into contact with the side surfaces of the element, thus regulating the horizontal positions of the element 1 and the insulator 30.
摘要翻译：目的：为了将半导体元件容易地安装到散热板上，而不会通过形成将元件和散热板的散热片电绝缘的绝缘体相对位置而移位，使其具有围绕元件的侧表面的侧板部分。构成：将玻璃布或无纺布浸渍有环氧基或聚酯基树脂并达到半刚性状态的预浸料坯被压缩，加热和模制，从而制造盒形绝缘体30.绝缘体30具有底部由散热器3的暴露表面保持的板部31和散热板6，侧板部32，翻转部33，侧板中的一个被翻转以覆盖热的暴露表面水槽3和与散热器3的嵌合孔3A连接的圆筒部34.散热片3和散热板6被底板部31绝缘，元件1和散热板6 电绝缘。侧板部分32与元件的侧表面接触，从而调节元件1和绝缘体30的水平位置。

8. 发明专利

JPH10200023A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10200023A
公开(公告)日：1998-07-31
申请号：JP110497
申请日：1997-01-08
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO , YAMADA TADANORI
IPC分类号： B21D28/00 , H01L23/48 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To prevent solder bridges when a chip is mounted on a small outline package semiconductor device having dual elements assembled with a lead frame and improve the radiation for the heat of the chip. SOLUTION: The device comprises a lead frame 1, two power semiconductor element 2 mounted on the lead frame 1. On the lead frame 1a pair of the right and left die pads 1a are disposed and the chips of the power elements 2 are mounted on the die pads. Side walls 1a-1 rising towards the chip mounts along the opposed side edges of the die pads to block a molten solder from spreading at mounting the chips and couple each die pad 1a integrated with its outer leads 1b, thereby enhancing the radiation for the heat of the chip, utilizing the outer leads 1b as a heat transfer path.

9. 发明专利

JPH0513623A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0513623A
公开(公告)日：1993-01-22
申请号：JP16476891
申请日：1991-07-05
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31
摘要： PURPOSE:To solve the problem where a trade-off relation exists between molding resins, one desirable for improving voltage characteristics and another desirable for improving moisture resistance. CONSTITUTION:The first resin member 7 for improving voltage characteristics is placed in a pot, and the second resin member 8 for improving moisture resistance is put on the first resin member, on which a semiconductor chip is placed. Then, transfer molding is performed in such a manner that molding resin is applied from above the chip in the cavity 3 between the two resin members. As a result, the chip is enclosed by both the resin for improving voltage characteristics and the resin for improving moisture resistance, and thus a highly reliable device is realized owing to the respective properties of both resin. This device is fabricated in a single transfer molding process.

10. 发明专利

JPH02224348A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02224348A
公开(公告)日：1990-09-06
申请号：JP4590989
申请日：1989-02-27
申请人： FUJI ELECTRIC CO LTD
发明人： ARAI TOSHIHIRO
IPC分类号： H01L21/60
摘要： PURPOSE:To improve the bonding strength of a bonding wire with a matter to be connected by a method wherein the bonding surface of the bonding wire of a flat sectional form with the matter to be connected is bonded to the matter so as to become parallel to the flat surface of the bonding wire. CONSTITUTION:A bonding wire 1 is a flat wire having a thickness (d) and a width (w) wider than that thickness (d). Accordingly, a large collapse width W is obtained by only squashing this wire 1 slightly in the direction of the thickness of a matter 2 to be connected and a wide contact area is obtained between the bonding surface of the wire with the matter 2 and the matter 2 to be connected. Thereby, there is no need to crush the wire 1 until a bonding neck part becomes thin and the possibility of a disconnection at the bonding neck part is eliminated.

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