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1. 发明专利

JP2012158817A Aluminum-diamond composite and method for production thereof 有权
标题翻译：铝 - 金刚石复合材料及其生产方法
公开(公告)号：JP2012158817A
公开(公告)日：2012-08-23
申请号：JP2011020315
申请日：2011-02-02
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： HIROTSURU HIDEKI , TSUKAMOTO HIDEO , ISHIHARA YOSUKE , IWAMOTO TAKESHI
IPC分类号： C22C26/00 , C22C1/10 , C22C21/00 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide an aluminum-diamond composite which has high thermal conductivity and thermal expansion coefficient close to that of a semiconductor device in combination, and whose surface plating property and surface roughness are improved so as to be suitable for being used as the heatsink of the semiconductor device or the like.SOLUTION: The tabular aluminum-diamond composite comprises diamond particles and a metal including aluminum as a main component. The content of diamond particles is 40-70 vol.%. The composite has the surface layers 3a and 3b having thickness of 0.01-0.3 mm comprising aluminum as a main component. After introducing a linear or intermittent flaw on at least one surface of the composite, an Ni-plated or (Ni+Au) double plated layer having thickness of 0.5-15 μm is provided on the surface. Further, the plated layer is broken along the flaw, and thus the composite has a structure such that a complexed part 2 is exposed in a part of a side face.
摘要翻译：要解决的问题：提供一种组合具有接近于半导体器件的热导率和热膨胀系数高的铝 - 金刚石复合材料，并且其表面电镀性能和表面粗糙度得到改善以适合于被用作半导体器件等的散热器。解决方案：片状铝 - 金刚石复合材料包括金刚石颗粒和包括铝作为主要成分的金属。金刚石颗粒的含量为40-70体积％。该复合材料具有包含铝作为主要成分的厚度为0.01-0.3mm的表面层3a和3b。在复合材料的至少一个表面上引入线性或间断缺陷之后，在表面上提供厚度为0.5-15μm的Ni镀层或（Ni + Au）双电镀层。此外，电镀层沿着缺陷断裂，因此复合材料具有使得复合部分2暴露在侧面的一部分中的结构。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011049437A Led mounting structure, method of manufacturing the same, and substrate for mounting led 有权
标题翻译： LED安装结构，其制造方法和用于安装LED的基板
公开(公告)号：JP2011049437A
公开(公告)日：2011-03-10
申请号：JP2009197990
申请日：2009-08-28
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： ISHIHARA YOSUKE , HIROTSURU HIDEKI , TSUKAMOTO HIDEO
IPC分类号： H01L33/48
摘要： PROBLEM TO BE SOLVED: To provide: an LED mounting structure with a small linear expansion coefficient difference to LED and an excellent thermal conductivity; a method of manufacturing the LED mounting structure; and a substrate for mounting LED for manufacturing the LED mounting structure. SOLUTION: The LED mounting substrate is made by impregnating aluminum alloy into a porous body made of one or more types of particles chosen from the group consisting of silicon carbide, aluminum nitride, silicon nitride, diamond and graphite, with the fogging cast method. The aluminum alloy on the surface is etched to the surface roughness (Ra) of 0.5-10 μm after processing to 0.01-0.5 μm with a plate thickness of 0.05-0.5 mm. One or more types of metal layers chosen from the group consisting of Ni, Co, Pd, Cu, Ag, Au, Pt, Sn are formed. The area of 50-90% of the entire surface is made by exposing ceramic particles. The LED mounting structure using the substrate and the method of manufacturing the structure are also provided. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供：具有与LED的线性膨胀系数差小的LED安装结构和良好的导热性; 一种制造LED安装结构的方法; 以及用于安装用于制造LED安装结构的LED的基板。解决方案：LED安装基板是通过将铝合金浸入由从碳化硅，氮化铝，氮化硅，金刚石和石墨组成的组中选择的一种或多种类型的颗粒制成的多孔体中制成的，具有雾化铸件方法。将表面上的铝合金在加工至0.01-0.5μm之后，其厚度为0.05-0.5mm被蚀刻至表面粗糙度（Ra）为0.5-10μm。形成从Ni，Co，Pd，Cu，Ag，Au，Pt，Sn组成的组中选择的一种以上的金属层。整个表面的50-90％的面积是通过暴露陶瓷颗粒制成的。还提供了使用基板的LED安装结构和制造该结构的方法。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010024500A Aluminum-silicon carbide composite body and method for producing the same 有权
标题翻译：铝 - 碳化硅复合体及其制造方法
公开(公告)号：JP2010024500A
公开(公告)日：2010-02-04
申请号：JP2008188082
申请日：2008-07-22
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： HIROTSURU HIDEKI , TSUKAMOTO HIDEO , HIKUMA TOMOSHI , AONO RYOTA
IPC分类号： C22C1/10 , B22F3/14 , B22F3/24 , C22C1/05 , C22C21/00 , H01L23/36 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide an aluminum-silicon carbide composite body which is suitable as a base sheet for a power module.
SOLUTION: There is disclosed a method for producing a sheet-shaped aluminum-silicon carbide composite body, wherein 15 to 40 vol.% of metal powder comprising 77 to 94.5 mass% aluminum, 5 to 20 mass% silicon and 0.5 to 3 mass% magnesium, 10 to 50 vol.% of silicon carbide powder with the average particle diameter of 0.5 to 30 μm, 5 to 35 vol.% of boron nitride powder with the average particle diameter of 1 to 30 μm and a crystallization degree (GI value) of ≤3 and 5 to 35 vol.% graphite powder obtained by graphitizing coke-based carbon with the average particle diameter of 1 to 1,000 μm are mixed, thereafter, the mixture is filled into a mold subjected to mold releasing treatment, is heated at 600 to 750°C, is subjected to hot pressing under ≥10 MPa, and is further subjected to cutting and/or face working, so as to have a sheet thickness of 2 to 6 mm.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于功率模块的基片的铝 - 碳化硅复合体。解决方案：公开了一种片状铝 - 碳化硅复合体的制造方法，其中15〜40体积％的金属粉末含有77〜94.5质量％的铝，5〜20质量％的硅，0.5〜 3质量％的镁，10〜50体积％的平均粒径为0.5〜30μm的碳化硅粉末，5〜35体积％的平均粒径为1〜30微米的氮化硼粉末和结晶度（GI值）≤3和5〜35体积％的石墨粉末，通过石墨化平均粒径为1〜1000μm的焦碳系碳粉而混合，然后将该混合物填充到脱模处理模具中在600〜750℃下进行加热，在≥10MPa下进行热压，进一步进行切割和/或加工，使其厚度为2〜6mm。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2012158783A Aluminum-diamond composite, and method for production thereof 审中-公开
标题翻译：铝 - 金刚石复合材料及其生产方法
公开(公告)号：JP2012158783A
公开(公告)日：2012-08-23
申请号：JP2011017554
申请日：2011-01-31
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： HIROTSURU HIDEKI , TSUKAMOTO HIDEO , ISHIHARA YOSUKE
IPC分类号： C22C26/00 , B22C3/00 , B22D18/02 , B22D19/00 , C22C1/10 , C23C28/00
摘要： PROBLEM TO BE SOLVED: To provide an aluminum-diamond composite which has high heat conductivity and thermal expansion coefficient close to that of a semiconductor device in combination, and whose surface roughness is improved so as to be suitable for being used as the heatsink of the semiconductor device or the like.SOLUTION: The tabular aluminum-diamond composite 1 comprising diamond particles and a metal including aluminum as a main component comprises a complexed part 2 and the surface layers 3 provided on both faces of the complexed part. The surface layer 3 comprises a diamond-like carbon material having thickness of 0.3-50 μm, and the content of the diamond particles is 40-70 vol.% of the whole aluminum-diamond composite.
摘要翻译：要解决的问题：提供一种组合具有接近半导体器件的导热性和热膨胀系数高的铝 - 金刚石复合材料，并且其表面粗糙度得到改善，以适于用作半导体装置的散热片等。解决方案：包含金刚石颗粒和包括铝作为主要成分的金属的片状铝 - 金刚石复合材料1包括复合部分2和设置在复合部分的两个表面上的表面层3。表层3包括厚度为0.3-50μm的类金刚石碳材料，金刚石颗粒的含量为整个铝 - 金刚石复合材料的40-70体积％。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012044040A Holding substrate for led light emitting device and led light emitting device 有权
标题翻译： LED发光装置和LED发光装置的保持基板
公开(公告)号：JP2012044040A
公开(公告)日：2012-03-01
申请号：JP2010184971
申请日：2010-08-20
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： ISHIHARA YOSUKE , HIROTSURU HIDEKI , TSUKAMOTO HIDEO , IWAMOTO GO
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a holding substrate for an LED light emitting device suitable as a high output LED, which has a small difference in a coefficient of linear thermal expansion, as compared with a III-V group semiconductor crystal, which constitutes LED, is excellent in thermal conductivity, and further is superior in chemical resistance against an acid and alkali solution which are used in a manufacturing process.SOLUTION: The holding substrate for the LED light emitting device is manufactured by the steps of: impregnating a porous body comprises silicon carbide with an aluminum alloy by using a liquid forging method; processing the porous body so that the porous body has a sheet thickness of 0.05 to 1.0 mm and surface roughness of 0.01 to 0.5 μm; forming an aluminum layer with a thickness of 0.05 to 2 μm on the surface of the substrate by using an evaporation method or sputtering method; heating the substrate in an inert gas or vacuum atmosphere at a temperature of 460 to 650°C for one minute or longer; and forming a Ni plating layer with a thickness of 0.5 to 5 μm and a gold plating layer with a thickness of 0.5 to 2 μm through plating treatment; or forming a metal layer with a thickness of 0.1 to 2 μm by using the evaporation method or sputtering method.
摘要翻译：解决的问题：与III-V族半导体晶体相比，为了提供适合作为线性热膨胀系数小的适合作为高输出LED的LED发光元件的保持基板，构成LED的导热性优异，在制造工序中使用的酸碱溶液的耐化学性也优异。解决方案：通过以下步骤制造用于LED发光器件的保持基板：通过使用液体锻造方法浸渍多孔体由铝合金制成的碳化硅; 加工多孔体，使多孔体的板厚为0.05〜1.0mm，表面粗糙度为0.01〜0.5μm; 通过使用蒸发法或溅射法在基板的表面上形成厚度为0.05〜2μm的铝层; 在惰性气体或真空气氛中，在460〜650℃的温度下加热基材1分钟以上; 并通过电镀处理形成厚度为0.5至5μm的镀镍层和厚度为0.5至2μm的镀金层; 或使用蒸发法或溅射法形成厚度为0.1〜2μm的金属层。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010024077A Aluminum-silicon carbide composite and method for producing the same 审中-公开
标题翻译：碳酸铝复合材料及其制造方法
公开(公告)号：JP2010024077A
公开(公告)日：2010-02-04
申请号：JP2008186226
申请日：2008-07-17
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： HIROTSURU HIDEKI , TSUKAMOTO HIDEO , HIKUMA TOMOSHI , AONO RYOTA
IPC分类号： C04B35/565 , C22C1/05 , C22C1/10 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide an aluminum-silicon carbide composite suitable as a base plate for a power module.
SOLUTION: A method for producing the plate-shaped aluminum-silicon carbide composite having 2-6 mm thickness includes the steps of: mixing 20-40 vol.% metal powder containing 77-94.5 mass% aluminum, 5-20 mass% silicon and 0.5-3 mass% magnesium with 60-80 vol.% silicon carbide powder having 50-300 μm average particle size; packing the obtained mixture in a mold which is subjected to mold-release treatment; heating the packed mixture to 600-750°C; and subjecting the heated mixture to hot press molding under ≥10 MPa.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适合作为功率模块的基板的铝 - 碳化硅复合材料。解决方案：制造厚度为2-6mm的板状铝 - 碳化硅复合体的方法包括以下步骤：将含有77-94.5质量％铝的20-40体积％金属粉末与5-20质量％％硅和0.5-3质量％的镁，60-80体积％的平均粒度为50-300微米的碳化硅粉末; 将所得混合物包装在经脱模处理的模具中; 将填充的混合物加热至600-750℃; 并将加热的混合物在≥10MPa下进行热压成型。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009018319A Aluminum-ceramic composite body and its manufacturing method 审中-公开
标题翻译：铝陶瓷复合体及其制造方法
公开(公告)号：JP2009018319A
公开(公告)日：2009-01-29
申请号：JP2007181543
申请日：2007-07-10
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： HIROTSURU HIDEKI , TSUKAMOTO HIDEO
IPC分类号： B22D19/00 , B22D18/02 , C04B41/88 , C22C1/10 , C22C21/00 , C22C29/02 , C22C47/08 , C22C101/10
摘要： PROBLEM TO BE SOLVED: To inexpensively provide an aluminum-ceramic composite body which is low in thermal expansion and is applicable to a large component without impairing characteristics such as thermal conductivity by adjusting the thermal expansion while ensuring the workability of a worked portion and improving strength characteristics of a portion necessary for mechanical properties.
SOLUTION: The manufacturing method of the aluminum-ceramic composite body 5 comprises: (1) a step of forming or working a ceramic porous body to a shape larger than a shape of a product, or forming or working a hole part to a tap hole or a through-hole 7 larger than the final shape thereof; (2) a step of inserting a screw of a graphite in the tap hole part and a graphite in the through-hole part; (3) a step of impregnating a metal mainly consisting of aluminum; (4) a step of working an outer peripheral part and a surface part of the aluminum-ceramic composite body to the final shape; and (5) a step of working an aluminum-graphite composite body 6 of the hole part or the like to the final shape.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了廉价地提供热膨胀低的铝陶瓷复合体，并且可以通过调节热膨胀同时确保加工部的加工性而不损害诸如导热性的特性而在大的组分并改善机械性能所需部分的强度特性。解决方案：铝陶瓷复合体5的制造方法包括：（1）将陶瓷多孔体形成或加工成大于产品形状的步骤，或将孔部形成或加工到大于其最终形状的抽头孔或通孔7; （2）在通孔部中插入石墨的螺钉和通孔部的石墨的工序; （3）浸渍主要由铝构成的金属的工序; （4）将铝 - 陶瓷复合体的外周部和表面部加工成最终形状的工序; 和（5）将孔部等的铝 - 石墨复合体6加工成最终形状的工序。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007107070A Composite of aluminum alloy, silicon carbide and silicon nitride 有权
标题翻译：铝合金，碳化硅和氮化硅的复合材料
公开(公告)号：JP2007107070A
公开(公告)日：2007-04-26
申请号：JP2005301116
申请日：2005-10-17
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： IWAMOTO TAKESHI , TSUKAMOTO HIDEO , HIROTSURU HIDEKI
IPC分类号： C22C1/10 , C04B35/565 , C04B35/584 , C04B35/591 , C04B41/88 , C22C21/00
摘要： PROBLEM TO BE SOLVED: To provide a composite of aluminum alloy, silicon carbide and silicon nitride having high rigidity and a low coefficient of thermal expansion suitable for an electrostatic chuck member, a semiconductor manufacturing member and the like. SOLUTION: The method for producing the composite of aluminum alloy, silicon carbide and silicon nitride comprises the steps of; preparing a ceramic porous body by using a silicon carbide powder and a silicon powder, or a silicon carbide powder, a silicon nitride powder and a silicon powder, and by sintering the powders through the reaction of nitriding the silicon powder; and impregnating a metal mainly containing aluminum. The prepared ceramic porous body contains an unreacted and remaining silicon powder of 10 mass% or less. The composite comprises: the ceramic porous body with a relative density of 60 to 85% made of the silicon carbide powder and the silicon nitride powder; and the metal which mainly contains aluminum and impregnates into the ceramic porous body. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供适用于静电卡盘部件，半导体制造部件等的具有高刚性和低热膨胀系数的铝合金，碳化硅和氮化硅的复合材料。解决方案：铝合金，碳化硅和氮化硅的复合材料的制造方法包括以下步骤：通过使用碳化硅粉末和硅粉末或碳化硅粉末，氮化硅粉末和硅粉末来制备陶瓷多孔体，并通过氮化硅粉末的反应烧结粉末; 并浸渍主要含有铝的金属。制备的陶瓷多孔体含有10质量％以下的未反应残留的硅粉末。复合材料包括：由碳化硅粉末和氮化硅粉末制成的相对密度为60至85％的陶瓷多孔体; 以及主要含有铝并浸渍到陶瓷多孔体中的金属。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2013012623A Led light-emitting element holding substrate and manufacturing method thereof and led light-emitting element 审中-公开
标题翻译： LED发光元件保持基板及其制造方法及LED发光元件
公开(公告)号：JP2013012623A
公开(公告)日：2013-01-17
申请号：JP2011145150
申请日：2011-06-30
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： ISHIHARA YOSUKE , HIROTSURU HIDEKI , TSUKAMOTO HIDEO , IWAMOTO GO
IPC分类号： H01L33/64 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide an LED light-emitting element holding substrate whose difference in linear thermal expansion coefficient with group III-V semiconductor crystal constituting an LED is small and which excels in thermal conductivity and further excels in chemical resistance against acid and alkali solutions used in manufacturing, making it suitable for a high output LED.SOLUTION: The LED light-emitting element holding substrate is covered with aluminum or aluminum alloy in thickness of 0.1 to 2.0 mm on the outer periphery thereof, and has aluminum or aluminum alloy formed in thickness of 0.05 to 2 μm on both sides of the substrate having a metal impregnated ceramic composite body exposed to both principal planes thereof. After being heated at 460 to 650°C for one minute or more in a nitrogen, argon, hydrogen, helium or vacuum atmosphere, the substrate has a Ni plated layer in thickness of 0.5 to 5 μm and a gold plated layer in thickness of 0.05 to 2 μm formed in order over the whole surface thereof.
摘要翻译：要解决的问题：提供一种LED组合LED的发光元件保持基板，其与组III-V半导体晶体的线性热膨胀系数的差异小，导热性优异，耐化学性优异用于制造的酸碱溶液，使其适用于高输出LED。解决方案：LED发光元件保持基板的外周覆盖有厚度为0.1〜2.0mm的铝或铝合金，并且在两侧形成厚度为0.05〜2μm的铝或铝合金的基底具有暴露于其两个主平面的金属浸渍陶瓷复合体。在氮气，氩气，氢气，氦气或真空气氛中，在460〜650℃下加热1分钟以上后，基板的厚度为0.5〜5μm的镀Ni层，厚度为0.05的镀金层到2μm，整个表面依次形成。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2010109081A Metal matrix composite substrate for led light emitting device, and led light emitting device using the same 审中-公开
标题翻译：用于LED发光装置的金属矩阵复合基板和使用其的LED发光装置
公开(公告)号：JP2010109081A
公开(公告)日：2010-05-13
申请号：JP2008278513
申请日：2008-10-29
申请人： Denki Kagaku Kogyo Kk , 電気化学工業株式会社
发明人： HIROTSURU HIDEKI , TSUKAMOTO HIDEO , ISHIHARA YOSUKE
IPC分类号： H01L33/32 , H01L33/00 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a metal matrix composite substrate for an LED light emitting device which has small difference in linear thermal expansion, as compared with III-V group semiconductor crystal, which constitutes LED, and is excellent in thermal conductivity and suitable as a high power LED, and to provide the LED light emitting device using it.
SOLUTION: The LED light emitting device is manufactured through the following steps: (1) a step of epitaxially growing the III-V group semiconductor crystal on one principal surface of a disk or plate single crystal growth substrate; (2) a step of join the metal matrix composite substrate for the LED light emitting device, which is described in claim 2 or 3, to the surface of the III-V group semiconductor crystal through a metal layer and removing the single crystal growth substrate by one method of laser irradiation, etching, and grinding for back surface; (3) a step of performing cut process after performing surface treatment and electrode formation in the surface of the III-V group semiconductor crystal.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：与构成LED的III-V族半导体晶体相比，提供一种与线性热膨胀差异小的LED发光元件用金属基复合基板，导热性优异并适合作为大功率LED，并提供使用它的LED发光装置。解决方案：通过以下步骤制造LED发光器件：（1）在盘或板单晶生长衬底的一个主表面上外延生长III-V族半导体晶体的步骤; （2）通过金属层将权利要求2或3所述的LED发光元件用金属基复合基板与III-V族半导体晶体的表面接合并除去单晶生长基板的工序通过激光照射，蚀刻和背面磨削的一种方法; （3）在III-V族半导体晶体的表面进行表面处理和电极形成之后进行切割处理的步骤。版权所有（C）2010，JPO＆INPIT

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