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1. 发明专利

JP2014082318A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2014082318A
公开(公告)日：2014-05-08
申请号：JP2012229139
申请日：2012-10-16
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO , OTA TAKASHI
IPC分类号： H01L21/304
CPC分类号： H01L21/31138 , B05C9/14 , B05C11/08 , B05C11/1015 , B08B3/08 , G03F7/42 , H01L21/31133 , H01L21/67034 , H01L21/67051 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which may perform low temperature processing immediately after high temperature processing using a heater and heats a substrate to a desired high temperature by using the heater.SOLUTION: A substrate processing apparatus 1 includes: a spin chuck 2; a disc-like heater 3 disposed in a space 39 between an upper surface of a spin base 12 and a lower surface of a wafer W held by the spin chuck 2; a support shaft 25 which supports the heater 3 independently of the spin chuck 2; and a heater lifting mechanism for moving up and down the support shaft 25. A space between the heater 3 and the wafer W held by the spin chuck 2 may be changed. It is not necessary that the heater 3 is formed so as to rotate, and thus a rotation electric contact for supplying electric power to the heater 3 is not needed.
摘要翻译：要解决的问题：提供一种基板处理装置，其可以使用加热器在高温处理之后立即进行低温处理，并且通过使用加热器将基板加热到所需的高温。解决方案：基板处理装置1包括：旋转卡盘2 设置在旋转基座12的上表面和由旋转卡盘2保持的晶片W的下表面之间的空间39中的盘状加热器3; 独立于旋转卡盘2支撑加热器3的支撑轴25; 以及用于使支撑轴25上下移动的加热器提升机构。可以改变加热器3与由旋转卡盘2保持的晶片W之间的空间。加热器3不需要旋转，因此不需要向加热器3供给电力的旋转电接触。

2. 发明专利

JP2014003323A Substrate processing apparatus and substrate processing method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2014003323A
公开(公告)日：2014-01-09
申请号：JP2013181450
申请日：2013-09-02
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO , AKANISHI YUYA , KAWAGUCHI KENJI , YAMAMOTO MANABU
IPC分类号： H01L21/304 , G11B5/84 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which processes a substrate while moving a nozzle and narrows an internal space of a sealed chamber.SOLUTION: A sealed chamber 2 includes a lid member 7 for closing an upper opening 5 and houses a wafer W held by a spin chuck 3. During the process liquid treatment, the spin chuck 3 and the sealed chamber 2 are disposed at a process liquid treatment position, in which the wafer W and the lid member 7 face each other being spaced away from each other, with the sealed state of the sealed chamber 2 kept, and a process liquid nozzle 4 is positioned in a space between the wafer W and the lid member 7. On the other hand, during spin dry, the process liquid nozzle 4 is retreated from the space between the wafer W and the lid member 7, and the spin chuck 3 and the sealed chamber 2 are disposed at a dry position, in which the wafer W comes closer to the lid member 7 than when those components are in the process liquid treatment position, with the sealing state of the sealed chamber 2 kept.
摘要翻译：要解决的问题：提供一种在移动喷嘴并处理密封室的内部空间的同时处理基板的基板处理装置。解决方案：密封室2包括用于封闭上部开口5并容纳晶片的盖构件7 W由旋转卡盘3保持。在处理液处理期间，旋转卡盘3和密封室2设置在处理液体处理位置，其中晶片W和盖构件7彼此面对并与每个另一方面，保持密封室2的密封状态，并且处理液喷嘴4位于晶片W和盖构件7之间的空间中。另一方面，在旋转干燥期间，处理液喷嘴4被退回从晶片W和盖构件7之间的空间，旋转卡盘3和密封室2配置在干燥位置，在干燥位置，晶片W比在这些部件处于该过程中更靠近盖构件7 液体处理剂具有密封室2的密封状态。

3. 发明专利

JP2013123001A Substrate processing method and substrate processing apparatus 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：JP2013123001A
公开(公告)日：2013-06-20
申请号：JP2011271241
申请日：2011-12-12
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： AKANISHI YUYA , HASHIZUME AKIO , YAMAGUCHI TAKAHIRO , OTA TAKASHI
IPC分类号： H01L21/304 , G02F1/13 , G02F1/1333 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve cleanliness of a substrate.SOLUTION: A substrate processing method comprises: supplying an acid chemical with a pH of less than 6 to form a liquid membrane of the acid chemical covering an entire area of a principal surface of the substrate; supplying a pH adjusting liquid with a pH of 6 or larger in a state where the entire area of the principal surface of the substrate is covered with the liquid membrane of the acid chemical thereby to discharge the acid chemical from above the substrate and the liquid membrane of the acid chemical is replaced by a liquid membrane of the pH adjusting liquid, which covers the entire area of the principal surface of the substrate; and supplying the acid chemical to the substrate again in a state where the entire area of the principal surface of the substrate is covered with the liquid membrane of the pH adjusting liquid and thereby the liquid membrane of the pH adjusting liquid is replaced by the liquid membrane of the acid chemical, which covers the entire area of the principal surface of the substrate.
摘要翻译：要解决的问题：为了提高基材的清洁度。解决方案：一种基板处理方法，包括：提供pH小于6的酸性化学品以形成覆盖基材主表面整个区域的酸性化学品的液膜; 在基材的主面的整个面积被酸性化学物质的膜覆盖的状态下供给pH6以上的pH调节液，从而从基材上方排出酸性化学物质，的酸性化学物质被pH调节液体的液体膜代替，该液膜覆盖基材的主表面的整个区域; 并且在基板的主面的整个面积被pH调节液的液膜覆盖的状态下再次向该基板供给，由此将pH调节液的液膜替换为液膜的酸性化学品，其覆盖基材的主表面的整个区域。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2007318016A Method and device for processing substrate 有权
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2007318016A
公开(公告)日：2007-12-06
申请号：JP2006148432
申请日：2006-05-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO , SUGAWARA YUJI
IPC分类号： H01L21/306 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for processing a substrate capable of inhibiting or preventing the effect of a chemical treatment up to the undesirable range of the substrate.
SOLUTION: A section in the vicinity of the center of rotation of the underside of the rotated substrate W is supplied with chemicals, and the chemicals are made to go round in a first go-round quantity A1 towards a top face from the peripheral end face of the substrate W. The section in the vicinity of the center of rotation of the underside of the rotated substrate W is supplied with pure water, and part of the pure water is made to go round in the same go-round quantity as the chemicals. The greater part of the chemicals remaining in a range that the chemicals go round is removed while the chemicals are brought to a sufficiently diluted state even when the chemicals slightly remain. The section in the vicinity of the center of rotation of the underside of the rotated substrate W is supplied with pure water, a part of the pure water is made to go round in a second go-round quantity A2 larger than the quantity of the chemicals made to go round, and the residual chemicals on the substrate W are washed away.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于处理能够抑制或防止化学处理的效果直到基板的不期望的范围的基板的方法和装置。解决方案：旋转的基板W的下侧的旋转中心附近的部分被供给化学品，并使化学品以第一往复数量A1朝向顶面从第旋转基板W的下侧的旋转中心附近的部分被供给纯水，并且使一部分纯水以相同的循环量进行回转作为化学品。即使化学物质稍微残留，化学物质残留在化学物质范围内的化学物质的大部分也被除去，同时使化学品达到充分稀释状态。向旋转基板W的下侧旋转中心附近的部分供给纯水，使一部分纯水以比化学品的量大的第二循环量A2进行回转制成圆形，将基板W上残留的化学物质冲洗掉。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007311559A Substrate treatment method and substrate treatment apparatus 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：JP2007311559A
公开(公告)日：2007-11-29
申请号：JP2006139269
申请日：2006-05-18
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO
IPC分类号： H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment method and a substrate treatment apparatus which can reduce damages to the surface of a substrate.
SOLUTION: After supplying DIW onto the surface of a wafer W, a mixed liquid of DIW and H
2 O
2 is supplied. Thereafter, SC-1 (NH
4 OH/H
2 O
2 /DIW mixed liquid) is supplied onto the surface of the wafer W. Since DIW and H
2 O
2 are supplied onto the surface of the wafer W before the liquid containing NH
4 OH which is a corrosion component liquid which causes the surface of the wafer to corrode is supplied onto the surface of the wafer W, the corrosion of the surface of the wafer W by NH
4 OH can be suppressed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够减少对基板表面的损伤的基板处理方法和基板处理装置。
解决方案：在将DIW供给到晶片W的表面之后，提供DIW和H O 2 的混合液。此后，将SC-1（NH 4 SBS / DIW混合液）供给到晶片W的表面上。由于DIW和H O 2 在含有作为腐蚀成分液体的NH 4 SBO的液体之前供给到晶片W的表面上这导致晶片的表面腐蚀被提供到晶片W的表面上，可以抑制由NH 4 S OH表面的腐蚀。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007134689A Substrate processing method and its device 有权
标题翻译：基板处理方法及其装置
公开(公告)号：JP2007134689A
公开(公告)日：2007-05-31
申请号：JP2006275098
申请日：2006-10-06
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO
IPC分类号： H01L21/027 , B08B3/02 , G02F1/13 , G02F1/1333 , G11B5/84 , G11B7/26 , H01L21/304
CPC分类号： H01L21/67051 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method by which a resist used as a mask at ion implantation is well separated (removed) without damaging a substrate, and also to provide a substrate processing device.
SOLUTION: This device comprises: an SPM nozzle 12 for supplying SPM acting as resist separation agent to the surface of a wafer W held by a spin chuck 11; and a two-fluid nozzle 13 for supplying jet stream of drops generated by mixing heated purified water and heated nitrogen gas to the surface of the wafer W held by the spin chuck 11. By supplying the jet stream of liquid droplets from the two-fluid nozzle 13 to the surface of the wafer W, after damaging a cured layer of the surface of the resist, the SPM of high temperature is supplied from the SPM nozzle 12 to the surface of the wafer W, and the resist is separated from the surface of the wafer W.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理方法，其中用于离子注入的掩模用作掩模被良好地分离（去除）而不损坏基板，并且还提供了基板处理装置。解决方案：该装置包括：SPM喷嘴12，用于将作为抗蚀剂分离剂的SPM供给到由旋转卡盘11保持的晶片W的表面; 以及双流体喷嘴13，用于将通过将加热的净化水和加热的氮气混合到由旋转卡盘11保持的晶片W的表面产生的液滴的喷射流。通过从双流体提供液滴的喷射流喷嘴13到晶片W的表面，在损伤抗蚀剂表面的固化层之后，将高温SPM从SPM喷嘴12供给到晶片W的表面，并且抗蚀剂与表面分离的晶片W.版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2004096055A Method and apparatus for treating substrate 审中-公开
公开(公告)号：JP2004096055A
公开(公告)日：2004-03-25
申请号：JP2002293534
申请日：2002-10-07
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO , SUGIMOTO HIROAKI , TSUJIKAWA HIROTAKA
IPC分类号： G03F7/42 , B08B1/00 , B08B3/02 , B08B3/08 , B08B3/10 , B08B3/12 , B08B7/00 , B08B7/04 , H01L21/027 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method which enables a shortening in the time required for removing organic matter from the surface of a wafer to improve the throughput when removing the organic matter such as polymer attached on the surface of the wafer by a remover and capable of prolonging the life time of the reused remover which is recovered.
SOLUTION: Hot water is supplied to the surface of the wafer by a pre-treating agent supply mechanism 36 before the removal of the organic matter from the surface of the wafer by supplying the remover on the surface of the wafer W by the remover supply meachnism 22.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2014103416A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2014103416A
公开(公告)日：2014-06-05
申请号：JP2014025753
申请日：2014-02-13
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO , ANDO YUKITSUGU
IPC分类号： H01L21/304 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of inhibiting increase of the cost required for a mechanism for driving a nozzle.SOLUTION: A substrate processing apparatus 1 comprises: a spin chuck 3 which rotates a substrate W while holding the substrate W in a horizontal manner; a nozzle 5 which discharges a process liquid to a part of a peripheral part of an upper surface of the substrate W; a nozzle rotation mechanism 35 which causes the nozzle 5 to rotate around a rotation axis L2; a process liquid supply mechanism 6 which supplies the process liquid to the nozzle 5; and a rotational angle control device which causes the nozzle rotation mechanism 35 to change a rotation angle of the nozzle 5. The nozzle 5 includes a discharge port formed on a lower surface 5a of the nozzle 5. The discharge port of the nozzle 5 is disposed at a position separated from the rotation axis L2.
摘要翻译：要解决的问题：提供能够抑制用于驱动喷嘴的机构所需的成本增加的基板处理装置。解决方案：基板处理装置1包括：旋转卡盘3，其在保持基板W的同时旋转基板W 以水平方式喷嘴5，其将处理液体排出到基板W的上表面的周边部分的一部分; 喷嘴旋转机构35，其使喷嘴5绕旋转轴线L2旋转; 将处理液供给喷嘴5的处理液供给机构6; 以及使喷嘴旋转机构35改变喷嘴5的旋转角度的旋转角度控制装置。喷嘴5包括形成在喷嘴5的下表面5a上的排出口。喷嘴5的排出口在与旋转轴线L2分离的位置。

9. 发明专利

JP2014027201A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2014027201A
公开(公告)日：2014-02-06
申请号：JP2012168198
申请日：2012-07-30
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： NOZUKI TOMOMI , HASHIZUME AKIO
IPC分类号： H01L21/304 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of sufficiently restraining mist or droplets of processing liquid from being adhered to a substrate again.SOLUTION: A substrate processing device 100 comprises: a spin chuck 1 for rotating a substrate W around a vertical rotary shaft passing through a center of its surface while holding the substrate W at a horizontal posture; and an upper cup 22 that has a cylindrical shape with an upper end opened, and is arranged to surround a periphery of the substrate W held by the spin chuck 1. Furthermore, the substrate processing device 100 comprises: a curved face region 81 formed by making a belt-like partial region of an inner wall of the upper cup 22 across the entire upper cup 22 in a circumferential direction into a shape swollen inward of the upper cup 22; and an airflow formation section 82 for forming an airflow flowing downward of the upper cup 22 via the curved face region 81 by injecting gas from an injection port 822.
摘要翻译：要解决的问题：提供能够充分地抑制处理液的雾或液滴再次粘附到基板上的技术。解决方案：基板处理装置100包括：旋转夹盘1，用于使基板W围绕垂直旋转轴通过其表面的中心，同时将基底W保持在水平姿势; 以及具有上端打开的圆筒形状的上杯22，并且被布置成围绕由旋转卡盘1保持的基板W的周边。此外，基板处理装置100包括：弯曲面区域81，其由将上杯22的内壁的带状部分区域沿圆周方向穿过整个上杯22，形成从上杯22向内膨胀的形状; 以及气流形成部82，用于通过从注入口822喷射气体，经由弯曲面区域81形成从上杯22向下流动的气流。

10. 发明专利

JP2012164949A Substrate processing method and substrate processing apparatus 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：JP2012164949A
公开(公告)日：2012-08-30
申请号：JP2011063722
申请日：2011-03-23
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HASHIZUME AKIO
IPC分类号： H01L21/306
CPC分类号： B05C9/06 , B05C11/00 , B05C13/00 , B05C15/00 , C01B21/0687 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/67028 , H01L21/67063 , H01L21/67115 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/68742
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus in which the selection ratio of selective etching can be enhanced.SOLUTION: A substrate W is silylated when a silylation reagent is supplied thereto. When an etching agent is supplied subsequently to the substrate W, the substrate W thus silylated is etched.

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