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    • 1. 发明专利
    • Method for controlling angle of contact with water
    • 用于控制与水接触角度的方法
    • JP2005111309A
    • 2005-04-28
    • JP2003345585
    • 2003-10-03
    • Daikin Ind LtdNational Institute Of Advanced Industrial & Technologyダイキン工業株式会社独立行政法人産業技術総合研究所
    • TAKAHASHI JUNKONAGAI SHUSUKEWAKITA SHINICHI
    • B01J19/00B01J19/12
    • B01J19/00Y10T137/218Y10T137/2191Y10T137/2196Y10T428/24802
    • PROBLEM TO BE SOLVED: To provide a method for controlling an angle of contact with water, by which an object can be made hydrophilic/hydrophobic in a non-contact state and the degree of hydrophilic nature or hydrophobic nature can be adjusted by selecting a material to be used. SOLUTION: This method is different basically from the conventional method for exerting external force directly on the surface of the object to be modified. In the concrete, the surface of the object having hydrophilicity (a small angle of contact with water) particularly in the initial state is made hydrophobic (is made to have a large angle of contact with water) by bringing the hydrophilic surface of the object into contact with a hydrophobe (a substance for increasing the angle of contact with water) to be released from a discrete material without exerting the external force directly to the surface of the object. Inversely, the surface of the object made hydrophobic thereby is made hydrophilic in the non-contact state. As a result, the angle of contact with water can be made small or large reversibly in the non-contact state. A pattern can be formed by using this method. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于控制与水接触的角度的方法,通过该方法可以使物体在非接触状态下具有亲水/疏水性,亲水性或疏水性的程度可以通过 选择要使用的材料。 解决方案:该方法基本上与用于直接在待修改对象的表面上施加外力的常规方法不同。 在具体中,特别是在初始状态下具有亲水性(与水接触的小角度)的物体的表面通过将物体的亲水性表面进入到疏水性(与水接触的程度大) 与疏水物(用于增加与水的接触角度的物质)接触从离散材料释放,而不会将外力直接施加到物体的表面。 相反,由此形成疏水性的物体的表面在非接触状态下被制成亲水性。 结果,在非接触状态下,与水接触的角度可以可逆地变小或大。 可以使用该方法形成图案。 版权所有(C)2005,JPO&NCIPI
    • 6. 发明专利
    • Internal reflection type two-dimensional imaging ellipsometer
    • 内部反射型二维成像ELLIPSOMETER
    • JP2004069401A
    • 2004-03-04
    • JP2002226786
    • 2002-08-05
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • OTSUKI SOICHIWAKITA SHINICHI
    • G01B11/06G01J4/04G01N21/21G01N21/27G02B5/04G02B5/30
    • PROBLEM TO BE SOLVED: To provide an internal reflection type two-dimensional imaging ellipsometer capable of measuring a thickness and an optical characteristic of a material with a two dimension. SOLUTION: The ellipsometer includes a prism 49, an incident optical system 1, and an emit optical system 3. The incident optical system 1 has a light source 41-1, and an incident optical part 41 having a first collimeter and a first polarizer. The emit optical system 3 includes an emit optical part 43 having a second polarizer and a two-dimension detector, and an analyzer 43-1. At least one of the incident and emit optical systems 1 and 3 includes a measurement condition automatic setting means for automatically setting a plurality of measurement conditions for obtaining a polarization analysis parameter, and a support means 42 for supporting the prism 49, and the incident and emit optical parts 41 and 43. The support means 42 has a function of ajusting such that an incident light is irradiated to a measured surface through an incident face of a prism 2, and an emitted light is irradiated to the emit optical part 43 through an emit surface of the prism 2. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供能够测量具有二维的材料的厚度和光学特性的内反射型二维成像椭偏仪。 解决方案:椭偏仪包括棱镜49,入射光学系统1和发射光学系统3.入射光学系统1具有光源41-1和入射光学部分41,其具有第一碰撞仪和 第一偏振器。 发射光学系统3包括具有第二偏振器和二维检测器的发射光学部件43和分析器43-1。 入射光学系统1和发光光学系统3中的至少一个包括用于自动设定用于获得偏振分析参数的多个测量条件的测量条件自动设置装置和用于支撑棱镜49的支撑装置42, 发射光学部件41和43.支撑装置42具有调整功能,使得入射光通过棱镜2的入射面照射到测量的表面,并且发射的光通过 发射棱镜2的表面。版权所有(C)2004,JPO
    • 9. 发明专利
    • Method for measuring thickness of thin film
    • 测量薄膜厚度的方法
    • JP2004061141A
    • 2004-02-26
    • JP2002215947
    • 2002-07-25
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • OTSUKI SOICHIWAKITA SHINICHI
    • G01B11/06
    • H01L2924/0002H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a thin film thickness measuring method for precisely measuring the thickness of the thin film of a body substance and an organic substance such as an organic compound.
      SOLUTION: In the thin-film thickness measuring method due to internal reflection type ellipsometory, a thin-film sample 4 is irradiated with incident light via a prism 2 for measuring thickness. The thin-film sample 4 is formed on one surface of the prism 2 made of glass and has a refractive index that is smaller than that of the prism 2 by approximately 0.2 or more. In this case, the refractive index of the prism 2 made of glass is preferably approximately 1.60 to 2.00. Additionally, the refractive index of the prism 2 is set to approximately 1.40 to 1.60, and a high-refractive-index film having a refractive index being larger than that of the prism 2 by approximately 0.2 or more may be provided between the prism 2 and the thin-film sample 4.
      COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供一种用于精确测量身体物质和有机物质如有机化合物的薄膜的厚度的薄膜厚度测量方法。 解决方案:在由于内反射型椭圆偏振片的薄膜厚度测量方法中,薄膜样品4通过用于测量厚度的棱镜2用入射光照射。 薄膜样品4形成在由玻璃制成的棱镜2的一个表面上,并且具有比棱镜2的折射率小约0.2或更大的折射率。 在这种情况下,玻璃制的棱镜2的折射率优选为1.60〜2.00左右。 此外,棱镜2的折射率设定为约1.40〜1.60,折射率大于棱镜2的折射率大约为0.2以上的高折射率膜可以设置在棱镜2和 薄膜样品4.版权所有(C)2004,JPO
    • 10. 发明专利
    • マイクロ流体装置を活用した核酸増幅方法
    • 使用微流体装置的核酸放大方法
    • JP2014212705A
    • 2014-11-17
    • JP2013090154
    • 2013-04-23
    • 独立行政法人産業技術総合研究所National Institute Of Advanced Industrial & Technology
    • FUCHIWAKI YUSUKEKATAOKA MASATOSHIOYA TOSHIHIKOWAKITA SHINICHI
    • C12M1/00
    • C12M1/00
    • 【課題】流路内の核酸を超高速に増幅するための装置及び方法を提供する。【解決手段】PCR反応を行うことができる蛇行流路、前記蛇行流路の片側のループ部に対応する熱変性温度帯と反対側のループ部に対応するアニーリング温度帯、アニーリング温度帯と熱変性温度帯との間の伸長温度帯、さらに前記熱変性温度帯、伸長温度帯及びアニーリング温度帯を形成できるヒーターを備えた核酸増幅装置であって、前記蛇行流路は伸長部、熱変性部、冷却部及びアニーリング部から構成され、流路断面積は、伸長部
    • 要解决的问题:提供以超高速度在流路内扩增核酸的装置和方法。解决方案:用于扩增核酸的装置包括:可以进行PCR反应的曲折流动通道; 对应于曲折流动通道的一侧上的环状部分的变性温度区域; 对应于曲折流动通道另一侧的环形部分的退火温度区; 退火温度区与变性温度区之间的延伸温度区; 以及能够形成变性温度区域,延伸温度区域和退火温度区域的加热器。 曲折流动通道由延伸部分,变性温度部分,冷却部分和退火部分组成,流动通道的横截面面积如下:延伸部分<冷却部分<变性温度部分>退火 部分。 变性温度部设置在变性温度区域中,延伸部和冷却部配置在延伸温度区域,退火部设置在退火温度区域。