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1. 发明专利

JPS60180051A ION IRRADIATION DEVICE 失效
公开(公告)号：JPS60180051A
公开(公告)日：1985-09-13
申请号：JP3477584
申请日：1984-02-24
申请人： DENRIYOKU CHUO KENKYUSHO , NIPPON ELECTRON OPTICS LAB
发明人： KUSANAGI HIDEO , HONMA TERUYASU
IPC分类号： H01J37/26 , H01J27/08 , H01J37/07 , H01J37/08 , H01J37/09 , H01J37/317
摘要： PURPOSE:To irradiate a target position accurately with ions despite the change in the magnetic field by providing an ion deflecting means surrounded by a shield case between an ion generating part and the target and deflecting the ions to the opposite direction to that of the deflection by the magnetic field. CONSTITUTION:An ion irradiation device for electron microscopes is formed in such a manner that the argon gas from a gas source is led into a discharge chamber surrounded by a cathode 8 and is ionized by the discharge between the cathode 8 and an anode 7 and taken out from an opening 8a, and deflected by an electrostatic deflector 10 arranged so as to be surrounded by a magnetic shield case 12, and irradiates a sample 4 disposed in a magnetic field of an object lens consisting of a coil 2 and a yoke 1. When the current in the coil 2 is changed for varying the observation magnification the voltage to the deflector 10 is changed so that the deflection by the deflector 10 is opposite to the direction of deflection due to the magnetic field by a control circuit 17. Accordingly, the ions can always be adjusted so as to irradiate accurate position without being affected by the magnetic field.

2. 发明专利

JPS60180050A ION IRRADIATION DEVICE 失效
公开(公告)号：JPS60180050A
公开(公告)日：1985-09-13
申请号：JP3477484
申请日：1984-02-24
申请人： DENRIYOKU CHUO KENKYUSHO , NIPPON ELECTRON OPTICS LAB
发明人： KUSANAGI HIDEO , HONMA TERUYASU
IPC分类号： H01J37/26 , H01J27/08 , H01J37/08 , H01J37/317
摘要： PURPOSE:To irradiate a target position accurately with ions despite the change in the magnetic field by providing an ion deflecting means between an ion generating part and a target and changing the deflection angle of the ions corresponding to the magnetic field strength by the deflecting means. CONSTITUTION:An ion irradiation device for electron microscopes is formed in such a manner that the argon gas from a gas source is led into a discharge chamber surrounded by a cathode 8 and is ionized by the discharge between the cathode 8 and an anode 7 and is taken out from an opening 8a, deflected by a deflector 10, and irradiates a sample 4 disposed in a magnetic field produced by an object lens consisting of a coil 2 supplied with current from an exciting source 3, and a yoke 1. When the exciting current to the coil 2 is changed for varying the observation magnification the deflecting voltage to the deflector 10 is simultaneously changed by a control device 17. Accordingly, the ions can always irradiate the target position accurately where the sample 4 is placed.

3. 发明专利

JPH0515029B2 失效
公开(公告)号：JPH0515029B2
公开(公告)日：1993-02-26
申请号：JP20331884
申请日：1984-09-28
申请人： NIPPON ELECTRON OPTICS LAB
发明人： HONMA TERUYASU , UENO KATSUYOSHI
IPC分类号： H01J37/295

4. 发明专利

JPS57111938A TRANSMISSION ELECTRON MICROSCOPE 失效
公开(公告)号：JPS57111938A
公开(公告)日：1982-07-12
申请号：JP18765780
申请日：1980-12-27
申请人： NIPPON ELECTRON OPTICS LAB
发明人： HONMA TERUYASU
IPC分类号： H01J37/09 , H01J37/147 , H01J37/21 , H01J37/26
摘要： PURPOSE:To facilitate the limited field diaphragm image without requiring the skill, by providing a deflection system for varying the incident direction periodically under the state where the electron beam is fixed to the limited field diaphragm hole. CONSTITUTION:A limited field diaphragm 13 is arranged between an objective lens 6 and an intermediate lens 7 while two step deflection coils 14, 15 are arranged between a focus lens 4 and a specimen 5, where the sweeping current is supplied from a power source 16 through an exchange switch 17 to the first step deflection coil 14 while the sweep current is supplied from the power source 16 through an exchange switch 18 and a resistor 19 to the deflection coil 15. The exchange switches 17, 18 are interlocked and also interlocked with another switch 11. It is also constructed such that the deflection angle of the deflection coil 15 is larger than that of the deflection coil 14 where the deflecting direction is reversed. Consequently the limited field refraction image corresponding accurately with the field limited by the limited field diaphragm can be obtained.

5. 发明专利

JPH0133898B2 失效
公开(公告)号：JPH0133898B2
公开(公告)日：1989-07-17
申请号：JP18765780
申请日：1980-12-27
申请人： NIPPON ELECTRON OPTICS LAB
发明人： HONMA TERUYASU
IPC分类号： H01J37/09 , H01J37/147 , H01J37/21 , H01J37/26

6. 发明专利

JPH0255901B2 失效
公开(公告)号：JPH0255901B2
公开(公告)日：1990-11-28
申请号：JP1554181
申请日：1981-02-04
申请人： NIPPON ELECTRON OPTICS LAB
发明人： HONMA TERUYASU , WATANABE HISAO
IPC分类号： H01J37/22 , H01J37/147 , H01J37/26

7. 发明专利

JPS57130355A ELECTRONIC MICROSCOPE 失效
公开(公告)号：JPS57130355A
公开(公告)日：1982-08-12
申请号：JP1554181
申请日：1981-02-04
申请人： NIPPON ELECTRON OPTICS LAB
发明人： HONMA TERUYASU , WATANABE HISAO
IPC分类号： H01J37/22 , H01J37/147 , H01J37/26
摘要： PURPOSE:To determine an accurate multiplying factor by detecting the quantity of an electron beam on a phosphor plate and calculating the multiplying factor based on the detected data for display. CONSTITUTION:After a specimen illumination condition is set and fixed at a desired status, a condenser lens system is set at a proper multiplying factor in a normal control method. Next, a coefficient setting knob provided in a calculating circuit 12 is manipulated so that the multiplying factor value indicated on a display unit 13 equals to that already know. Then, the condenser lens system is controlled optionally. When the image multiplying factor on a phosphor plate 7 is varied by this control and the quantity of an electron beam is changed, a correct multiplying factor value is calculated by a calculating circuit 12, and is indicated on the display unit 13.

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