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1. 发明专利

JPH03129721A CRYSTALS GROWTH OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH03129721A
公开(公告)日：1991-06-03
申请号：JP7618089
申请日：1989-03-28
申请人： DAIDO STEEL CO LTD , UNIV NAGOYA KOGYO
发明人： UMENO MASAYOSHI , JINBO TAKASHI , SOGA TETSUO , IMAIZUMI MITSURU
IPC分类号： H01L21/205
摘要： PURPOSE:To obtain a compound semiconductor whose surface is smooth and whose crystallinity is excellent by a method wherein, in a first growth process, a compound semiconductor is crystal-grown at a first crystal growth temperature of a comparatively low temperature and, in a second growth process, a compound semiconductor is crystal-grown on its surface at a second crystal growth temperature of a high temperature. CONSTITUTION:First, an Si substrate is held on a susceptor 20 in a posture that its surface 28 is faced downward. While arsine is being introduced into a reaction furnace 10, the substrate is heated at a high temperature of about 950 deg.C by using a heating apparatus 26. Then, a heating temperature is lowered to about 450 deg.C; arsine and TMG are introduced into the reaction furnace 10; GaAs is crystal-grown on the cleaned surface 28. In succession, the heating temperature is raised to about 650 deg.C; the arsine and the TMG are introduced successively. Thereby, GaAs is crystal-grown on an intermediate layer.

2. 发明专利

JP2002289890A SOLAR CELL 失效
公开(公告)号：JP2002289890A
公开(公告)日：2002-10-04
申请号：JP2001090605
申请日：2001-03-27
申请人： UNIV NAGOYA KOGYO , NAT SPACE DEV AGENCY
发明人： UMENO MASAYOSHI , SOGA TETSUO , IMAIZUMI MITSURU
IPC分类号： H01L31/00 , H01L31/04 , H01L31/06 , H01L31/068 , H01L31/0693 , H01L31/18
摘要： PROBLEM TO BE SOLVED: To provide a solar cell which reduces the weight and the production cost of a compound semiconductor solar cell used for space, and whose radiation resistance is enhanced. SOLUTION: By using an organometallic vapor phase growth method, a crystalline thin-film solar cell by a compound semiconductor is formed directly on a cover glass, which is used to enhance the radiation resistance of the solar cell for space.

3. 发明专利

JPH08195504A PHOTODETECTOR 失效
公开(公告)号：JPH08195504A
公开(公告)日：1996-07-30
申请号：JP3581995
申请日：1995-01-17
申请人： DAIDO STEEL CO LTD
发明人： IMAIZUMI MITSURU
IPC分类号： H01L29/06 , H01L31/10
摘要： PURPOSE: To dispense with an optical filter for a light intake face of a photodetector and to make variable an energy value, i.e., a wavelength, of the minimum light which can be outputted as an electric signal through photoelectric conversion, by using a layer comprising specific quantum dots and an energy barrier, as a light-receiving layer. CONSTITUTION: A photodetector is obtained by forming a buffer layer 11, a base layer 12, a light-receiving layer 15 comprising an energy barrier layer 13 and a GaAs quantum dot layer, an emitter layer 16, a window layer 17, a P electrode 18 and also an N electrode 19 on a semiconductor substrate 10. As the light-receiving layer 15 of the photodetector, herein, a layer which has a plurality of quantum dots 14 each constituted of a semiconductor having sectional dimensions of about a de Broglie wavelength of an electron and has a semiconductor surrounding these quantum dots 14, having potential energy higher than the one of the quantum dots 14 and functioning as the energy barrier 13 and which comprises the quantum dots 14 and the energy barrier 13, is used.

4. 发明专利

JPH07162034A LIGHT EMITTING DIODE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07162034A
公开(公告)日：1995-06-23
申请号：JP30823593
申请日：1993-12-08
申请人： DAIDO STEEL CO LTD
发明人： SONE TOSHINORI , KATO TOSHIHIRO , SAKA TAKASHI , HIROYA MASUMI , IMAIZUMI MITSURU , MIZUNO YOSHIYUKI
IPC分类号： C23C16/18 , H01L33/12 , H01L33/14 , H01L33/30 , H01L33/40 , H01L33/60 , H01L33/00
摘要： PURPOSE:To provide a light emitting diode which is enhanced in light emitting efficiency, lessened in operating voltage, and easily manufactured. CONSTITUTION:An LED (light emitting diode) 10 formed, wherein a block layer 20 is formed on a second clad layer 18 different from the block layer 20 in conductivity type. Zn is diffused into the LED 10 through such a manner that it is diffused into the center 26 of the LED 10 deeper than the thickness of the block layer 20 but it is diffused into the other part of the LED 10 shallower than the thickness of the block layer 20, and the scope of the block layer 20 shown by slant lines in a figure is turned into the same conductivity type with the second clad layer 18. By this setup, an electric current is made to flow through only the center 26 to enable it to emit light, an upper electrode 24 is provided onto the upside of the block layer 20 so as to be large in contact area and not to cover the center 26, so that the upper electrode 24 is small in contact resistance, and light generated in the center 26 is prevented from being shaded by the upper electrode 24. A diffusion buffer film is formed on the block layer 20 excluding the center 26 of the LED 10, a Zn diffusion process is carried out, and thus the LED 10 is obtained.

5. 发明专利

JPH03278426A GROWING METHOD FOR CRYSTAL OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH03278426A
公开(公告)日：1991-12-10
申请号：JP7842890
申请日：1990-03-27
申请人： DAIDO STEEL CO LTD , NAGOYA KOUGIYOU DAIGAKUCHIYOU
发明人： IMAIZUMI MITSURU , UMENO MASAYOSHI
IPC分类号： C30B29/42 , C30B29/44 , C30B29/48 , H01L21/205 , H01L31/04
摘要： PURPOSE:To perform an epitaxial crystal growth having surface smoothness and excellent crystallinity by excessively increasing the abundance ratio of a group V or VI element. CONSTITUTION:If a crystal growth is performed, it is held on a susceptor 9 in an attitude that an Si substrate 10 is, for example directed upward, it is heated to a high temperature by a heater 12, oxide, etc., adhered to the substrate 10 is removed and purified. Then, a heating temperature is lowered, arsine and TMG are introduced into a reaction furnace 1, and GaAs is crystalline grown in a predetermined thickness on the purified surface. In this case, the abundance ratio of As of group V element on the substrate 10 is excessively increased as compared with a conventional method. Thus, crystal growth of group III-V or II-VI group compound on the Si substrate having smooth surface and excellent epitaxial crystallinity can be performed.

6. 发明专利

JPH0194677A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0194677A
公开(公告)日：1989-04-13
申请号：JP25180187
申请日：1987-10-06
申请人： DAIDO STEEL CO LTD
发明人： IMAIZUMI MITSURU , KATO TOSHIHIRO , SHICHI EIICHI
IPC分类号： H01L31/04 , C30B29/40
摘要： PURPOSE:To prevent electric performance deterioration attributable to the presence of buffers by forming a shortcircuit electrode shortcircuiting two kinds of semiconductors in a semiconductor element, wherein the two kinds of semiconductors whose band gaps are different are stacked in such a manner as to be interposed between buffers for alleviating lattice mismatching, and currents are allowed to flow between such two kinds of semiconductors. CONSTITUTION:A semiconductor element 10 comprises two kinds of semiconductors 12, 14, whose band gaps are different, being stacked in such a manner as to be interposed between buffers for alleviating lattice mismatching, and being used so that currents are allowed to flow between such two kinds of semiconductors 12, 14, wherein a shortcircuit electrode 30 for shortcircuiting said two kinds of semiconductors 12, 14 is provided. For example, a tandem solar battery 10 is constructed by stacking a solar battery 14, in which a p-n junction is formed by an n-GaAs layer and a P - GaAs layer, on a solar battery 12, in which a p-n junction is formed by an n-Si layer and a P -Si layer, while interposing a buffer 16 consisting of a GaP layer, a GaP/ GaAs1-xPx strained superlattice layer, and a GaAs1-xPx/GaAs strained superlattice layer. An Au shortcircuit electrode 30 is arranged by forming a plurality of grooves 26, 28 both horizontally and vertically on the surface of such tandem solar battery.

7. 发明专利

JPS6477928A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS6477928A
公开(公告)日：1989-03-23
申请号：JP23546387
申请日：1987-09-18
申请人： DAIDO STEEL CO LTD
发明人： IMAIZUMI MITSURU , KATO TOSHIHIRO , SHICHI EIICHI
IPC分类号： H01L21/205 , C30B25/18
摘要： PURPOSE:To prevent the adhesion of an impurity, etc., to decrease recombination centers and to improve the characteristics of a p-n junction by epitaxial-growing one of a p-type semiconductor and an n-type semiconductor and heating and purifying the surface of the semiconductor. CONSTITUTION:A substrate 22 is pretreated, and an oxide, etc., on the surface 28 are removed. The substrate 22 is charged into a reaction furnace 10 for an MOCVD device, and heated at a temperature of approximately 600-800 deg.C, a raw material gas is supplied, n-GaAs is epitaxial-grown onto the surface 28, and a semiconductor 38 is grown. H2 gas containing arsine is introduced, and the surface is heated up to approximately 600-1000 deg.C, and held for approximately one or sixty min, thus purifying and treating the surface. The temperature of the surface is adjusted at 600-800 deg.C, a raw material gas is fed, and a p -GaAs semiconductor 40 is grown. A p-n junction is constituted by the semiconductors 38 and 40. When the temperature is changed into a temperature proper to the crystal growth of p -Al0.8Ga0.2As and the raw material gas is supplied, a p Al0.8Ga0.2As semiconductor 42 is grown, thus acquiring a semiconductor element 34.

8. 发明专利

JPS6477927A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS6477927A
公开(公告)日：1989-03-23
申请号：JP23546287
申请日：1987-09-18
申请人： DAIDO STEEL CO LTD
发明人： IMAIZUMI MITSURU , KATO TOSHIHIRO , SHICHI EIICHI
IPC分类号： H01L21/205 , C30B25/18
摘要： PURPOSE:To remove an oxide film and a contaminant on the surface of a substrate and purify surface by charging the substrate into a reaction furnace for an epitaxial growth device and heating the substrate. CONSTITUTION:A substrate 22 is pretreated, and an oxide, etc., on the surface 28 are gotten rid of. The substrate 22 is charged into a reaction furnace 10, and the surface 28 is purified and treated. The surface is purified in such a manner that H2 gas containing arsine is introduced, and the surface is heated at approximately 60-1000 deg.C, and held for approximately one to sixty min. The temperature of the surface is adjusted at the growth temperature of n-GaAs, a raw gas is supplied, and n-GaAs is epitaxial-grown onto the surface 28. A desired double hetero-structure semiconductor element 34 is acquired by epitaxially growing n-Al0.40Ga0.60As, p-GaAs, p-Al0.40Ga0.60As and p -GaAs onto the surface 28 successively. Accordingly, the semiconductor element 34 having few lattice defects, etc., and composed of excellent semiconductors.

9. 发明专利

JPS6431973A CRYSTAL GROWING DEVICE IN CHEMICAL VAPOR OF ORGANO METALLIC COMPOUND 失效
公开(公告)号：JPS6431973A
公开(公告)日：1989-02-02
申请号：JP18700687
申请日：1987-07-27
申请人： DAIDO STEEL CO LTD
发明人： KATO TOSHIHIRO , IMAIZUMI MITSURU
IPC分类号： C23C16/18
摘要： PURPOSE:To grow crystal contg. metallic atom with uniform film thickness even in the peripheral edge part of a substrate by providing a recessing part having a same shape as the substrate to the holder thereof, nesting the substrate therein, and introducing a gaseous raw material cont. organo metallic compound into a reaction chamber. CONSTITUTION:A gaseous raw material contg. organo metallic compound is introduced into the reaction chamber 12 of a bell jar 10 made of quartz regulated to the prescribed temp. with a high-frequency coil 16 from a raw material gas feeder 14. Thereby crystal contg. metallic atoms of the organo metallic compound is grown on the surface of a substrate held by a carrying tray 20 made of quartz which is provided on a supporting base 18 made of graphite. In the above-mentioned crystal growing device of organo metallic compound, a spot facing hole 26 having a same shape as the substrate is provided on the carrying tray 20 used as the holder of the substrate and this substrate is nested into the recessing part. The depth (t) of this recessing part 26 is preferably made equal to plate thickness of the substrate. There increase of film thickness in the peripheral edge part of the substrate is solved and uniform film thickness is obtained.

10. 发明专利

JPH08335718A LIGHT EMITTING DIODE 失效
公开(公告)号：JPH08335718A
公开(公告)日：1996-12-17
申请号：JP14149495
申请日：1995-06-08
申请人： DAIDO STEEL CO LTD
发明人： IMAIZUMI MITSURU , SONE TOSHINORI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/00
摘要： PURPOSE: To provide a light emitting diode that emits light with the spectrum of wavelength that correspond to two kinds or more colors. CONSTITUTION: An active layer 18 of a light emitting diode comprises a first and a second quantum well 36a and 36b that corresponding to the different wavelength of emitted light with the different film thickness of well layers 32a to 32k, so that in the active layer 18, the light of wavelength that correspond to the quantum wells of 36a and 36b are emitted and the light of wavelength that correspond to the two different colors are included. The light emitting diode, that is provided with the light emission spectrum with two independent peaks, is obtained.

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