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    • 1. 发明专利
    • Ito transparent conductive film deposition method, and substrate with ito conductive film
    • ITO透明导电膜沉积方法,ITO导电膜基板
    • JP2006152322A
    • 2006-06-15
    • JP2004340107
    • 2004-11-25
    • Central Glass Co Ltdセントラル硝子株式会社
    • OMOTO HIDEOTAKAMATSU ATSUSHIKOBAYASHI KOJI
    • C23C14/08C23C14/32H01B5/14H01B13/00
    • PROBLEM TO BE SOLVED: To provide a method for depositing an ITO transparent conductive film on a substrate having organic polymers.
      SOLUTION: The ITO transparent conductive film deposition method by an ion-plating apparatus employing a pressure gradient type plasma gun installed in a vacuum chamber is provided, wherein an ITO transparent conductive film is deposited while the temperature of the substrate before the film deposition is set to be 80-145°C, and radiation heat incident on the substrate per unit area and a unit time from an ITO evaporation raw material is set in the range of 1.5-10 J/cm
      2 ×min. The pressure in the vacuum chamber is set to be 0.05-0.3 Pa. In the ITO transparent conductive film, tin of 5-10 wt.% is added to indium oxide in terms of oxide, and the specific resistance is in the range of 1.2×10
      -4 and 3.0×10
      -4 Ωcm.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种在具有有机聚合物的基底上沉积ITO透明导电膜的方法。 解决方案:提供了通过使用安装在真空室中的压力梯度型等离子体枪的离子镀装置的ITO透明导电膜沉积方法,其中在膜之前的基板的温度下沉积ITO透明导电膜 沉积设定为80-145℃,并且每单位面积入射到基板上的辐射热和来自ITO蒸发原料的单位时间设定在1.5-10J / cm 2的范围内 >×分钟。 真空室内的压力设定为0.05〜0.3Pa,在ITO透明导电膜中,氧化铟中添加5-10重量%的锡,其电阻率为1.2 ×10 -4 和3.0×10 -4 Ωcm。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Manufacturing method of transparent conductive film
    • 透明导电薄膜的制造方法
    • JP2006099976A
    • 2006-04-13
    • JP2004281176
    • 2004-09-28
    • Central Glass Co Ltdセントラル硝子株式会社
    • KATO KAZUHIROFUJII KENJIKOBAYASHI KOJI
    • H01B13/00C23C14/08
    • PROBLEM TO BE SOLVED: To solve such a problem that, in a transparent conductive substrate with an indium oxide film formed by a sputtering method with a glass substrate in unheated state, with the use of indium oxide as a target, a specific resistance greatly changes if the transparent conductive substrate is put under heating treatment at various temperatures.
      SOLUTION: On the manufacturing method of the indium oxide film, when the indium oxide conductive film is formed into a film on a non-heated glass substrate by the sputtering method with the use of an indium oxide target, an indium oxide film is formed in an argon gas atmosphere with a volume of oxygen gas of 2.5 volume% or less, and, after the film-forming of the indium oxide, the glass substrate with the indium oxide film-formed is put under heat treatment at a temperature of 100 to 200°C with a sheet resistance of the indium oxide set at 50 to 150 Ω/sq.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决的问题为了解决这样的问题,即在通过溅射法形成的氧化铟膜的透明导电性基板中,使用氧化铟作为目标的玻璃基板处于未加热状态的情况下, 如果透明导电基板在各种温度下进行加热处理,电阻大大变化。 解决方案:在氧化铟膜的制造方法中,当通过使用氧化铟靶的溅射法将氧化铟导电膜在未加热的玻璃基板上形成膜时,将氧化铟膜 在氧气体积为2.5体积%以下的氩气气氛中形成,在氧化铟成膜后,将形成有氧化铟膜的玻璃基板在温度下进行热处理 为100〜200℃,氧化铟膜的薄层电阻为50〜150Ω/ sq。 版权所有(C)2006,JPO&NCIPI
    • 6. 发明专利
    • Multiple glass
    • 多层玻璃
    • JP2008222507A
    • 2008-09-25
    • JP2007064386
    • 2007-03-14
    • Central Glass Co Ltdセントラル硝子株式会社
    • KATO KAZUHIROOMOTO HIDEOFUJII KENJIKOBAYASHI KOJI
    • C03C27/06C03C17/36
    • C03C17/36C03C17/3613C03C17/3639C03C17/3644C03C17/366C03C17/3681C03C27/06
    • PROBLEM TO BE SOLVED: To provide a multiple glass, excellent in a heat insulative property suppressing the heat flow from the inside of a room to outdoor during winter, a heat-shielding property suppressing the flow of solar energy coming into a room during summer, high in visible light transmittance and excellent in giving lighting and visibility effects.
      SOLUTION: The multiple glass is obtained by arranging two glass sheets apart from each other at a specific distance, where a low resistive film comprising successively laminated layers of the first Ag film, the second metal oxide film, the second Ag film and the third metal oxide film is placed at the side of a hollow layer, and the first metal oxide film, the second metal oxide film and the third metal oxide film comprise each a metal oxide film consisting mainly of ZnO film. The diffraction angle of the diffraction peak at the crystal face (002) of the ZnO film is at most 33.9°; the glass sheet has the thickness of at least 3 mm; and for the total thickness t1 of the two glass sheets, the visible light transmittance of the multiple glass is at least (70.0-0.3×t1)% and the solar heat gain coefficient is at most 0.38.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种在冬天期间抑制从室内到室外的热流的绝热性优异的多层玻璃,抑制进入室内的太阳能的流动的隔热性 在夏天,可见光透过率高,给予照明和可见度效果优异。 解决方案:通过将两块玻璃板彼此隔开一定距离获得多层玻璃,其中低电阻膜包括第一Ag膜,第二金属氧化物膜,第二Ag膜和 第三金属氧化物膜被放置在中空层的侧面,第一金属氧化物膜,第二金属氧化物膜和第三金属氧化物膜包括主要由ZnO膜组成的金属氧化物膜。 ZnO膜的晶面(002)衍射峰的衍射角最大为33.9°; 该玻璃板具有至少3mm的厚度; 并且对于两个玻璃板的总厚度t1,多个玻璃的可见光透射率为至少(70.0-0.3×t1)%,太阳能热增益系数为至多0.38。 版权所有(C)2008,JPO&INPIT
    • 7. 发明专利
    • Method for producing transparent electroconductive film
    • 生产透明电极膜的方法
    • JP2006097041A
    • 2006-04-13
    • JP2004281177
    • 2004-09-28
    • Central Glass Co Ltdセントラル硝子株式会社
    • KATO KAZUHIROFUJII KENJIKOBAYASHI KOJI
    • C23C14/08C23C14/58H01B13/00
    • PROBLEM TO BE SOLVED: To solve the problem that a transparent electroconductive substrate having an indium oxide film formed thereon by a sputtering process of using indium oxide as a target without heating a glass substrate has a defect that the specific resistance largely changes when heating the above substrate at various temperatures.
      SOLUTION: This method for producing the transparent electroconductive film comprises the steps of: forming the indium oxide film on the non-heated glass substrate in an argon gas atmosphere by a sputtering process while using the target made from indium oxide; and after having formed the film of indium oxide, heating the glass substrate having the film of indium oxide formed thereon, to a temperature between 200 and 350°C, so that the sheet resistance of the film of indium oxide can be 50 to 150 Ω/sq.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决的问题为了解决通过在不加热玻璃基板的情况下通过使用氧化铟作为靶的溅射法在其上形成有氧化铟膜的透明导电性基板的问题,具有电阻率大大变化的缺陷, 在各种温度下加热上述基材。 该解决方案:用于制造透明导电膜的方法包括以下步骤:在使用由氧化铟制成的靶的同时通过溅射法在氩气气氛中在非加热玻璃基板上形成氧化铟膜; 在形成氧化铟膜之后,将其上形成有氧化铟膜的玻璃基板加热到200〜350℃的温度,使得氧化铟膜的薄层电阻为50〜150Ω /平方米。 版权所有(C)2006,JPO&NCIPI
    • 8. 发明专利
    • Fireproof glass containing aqueous gel
    • 火焰玻璃含有水性凝胶
    • JP2003012350A
    • 2003-01-15
    • JP2001193165
    • 2001-06-26
    • Central Glass Co Ltdセントラル硝子株式会社
    • HIRUGAWA MASAHIROKOBAYASHI KOJI
    • C03C27/12
    • B32B17/10311
    • PROBLEM TO BE SOLVED: To solve such problems that adhesiveness between plate glass and aqueous gel is improved by using a silane coupling agent in the fireproof glass containing aqueous gel, however in case of fire, the aqueous gel firmly adhered to plate glass falls at the same time when the plate glass falls by breakage, resulting in poor demonstration of heat shielding and fireproofing performances.
      SOLUTION: For the adhesion of aqueous gel layer with plate glass surfaces arranged opposingly over the aqueous gel layer, a difference in adhesion strength is provided between one glass surface and the other glass surface. This difference in adhesion strength is in a range of 1.2 to 2.0 times which can be created by using silane coupling agent(s).
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题为了解决在含有水性凝胶的防火玻璃中使用硅烷偶联剂来提高平板玻璃和水性凝胶之间的粘合性的问题,但是在发生火灾的情况下,牢固地附着在玻璃板上的水凝胶落在 当平板玻璃破裂时,同时发生热屏蔽和防火性能的差示。 解决方案:为了将水性凝胶层与平面玻璃表面的粘附层相对布置在水凝胶层上,在一个玻璃表面和另一个玻璃表面之间提供了粘合强度的差异。 粘合强度的差异在1.2〜2.0倍的范围内,可以通过使用硅烷偶联剂产生。
    • 9. 发明专利
    • Precursor thin film of conductive thin film, and transparent conductive film obtained therefrom
    • 导电薄膜的薄膜和透明导电薄膜
    • JP2010168647A
    • 2010-08-05
    • JP2009236575
    • 2009-10-13
    • Central Glass Co Ltdセントラル硝子株式会社
    • KATO KAZUHIROOMOTO HIDEOFUJII KENJIKOBAYASHI KOJI
    • C23C14/08C23C14/58H01B5/14H01B13/00
    • PROBLEM TO BE SOLVED: To provide a thin film which is easily subjected to machining such as patterning, and capable of indicating low specific resistance and heat resistance.
      SOLUTION: A precursor thin film of a conductive thin film to be formed on a base material through the vapor deposition process consists mainly of indium oxide, and contains tin. In the precursor thin film, the assigned diffraction line is detected, in which the 2θ position of the diffraction line of indium oxide to be measured by the measurement of X-ray diffraction using the CuKα ray is ≤30.3° in terms of the (2 2 2) plane, and ≤35.3° in terms of (4 0 0) plane. The ratio (I
      222 /I
      400 ) of the intensity (I
      222 ) of the diffraction line by the (2 2 2) plane to the intensity (I
      400 ) of the diffraction line by the (4 0 0) plane is ≤5.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供容易进行图案化的加工的薄膜,并且能够表现出低的电阻率和耐热性。 解决方案:通过气相沉积工艺形成在基材上的导电薄膜的前体薄膜主要由氧化铟组成,并含有锡。 在前体薄膜中,检测所分配的衍射线,其中通过使用CuKα射线的X射线衍射的测量,待测量的氧化铟的衍射线的2θ位置以(2 (4 0 0)平面,≤35.3°。 衍射线由(2 2 2)面到(2 2 2)面的强度(I 222 )的比(I 222 / I 400 衍射线由(4 0 0)面的强度(I 400 )≤5。 版权所有(C)2010,JPO&INPIT