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    • 1. 发明专利
    • Method of manufacturing lanthanum boride film
    • 制造硼砂膜的方法
    • JP2012009179A
    • 2012-01-12
    • JP2010141942
    • 2010-06-22
    • Canon Incキヤノン株式会社
    • MURAKAMI YOICHIAOKI NAOFUMI
    • H01J9/02
    • C23C14/067C23C14/34C23C14/3414
    • PROBLEM TO BE SOLVED: To manufacture a lanthanum boride film having a low work function by a sputtering method with good reproducibility and high uniformity.SOLUTION: The method of manufacturing the lanthanum boride film includes a step of forming the lanthanum boride film on a substrate by the sputtering method in a state in which a target of lanthanum boride whose oxygen content is 0.4 mass% or more and 1.2 mass% or less and the substrate are arranged opposite to each other. L/λ is set to be 20 or more and the value obtained by dividing discharge electric power by the target area is set to be 1 W/cmor more and 5 W/cmor less, where λ is a mean free path (mm) of sputter gas molecules in the film formation and L is a distance (mm) between the substrate and the target.
    • 要解决的问题:通过溅射法制造具有低功函数的硼酸镧膜,具有良好的再现性和高均匀性。 解决方案:制造硼化镧膜的方法包括在氧化物含量为0.4质量%以上且1.2以下的硼化镧靶的状态下,通过溅射法在基板上形成硼化镧膜的工序 质量%以下,基板彼此相对配置。 将L /λ设定为20以上,将放电电力除以目标区域而得到的值设定为1W / cm 2以上且5W / cm 2 以下,其中λ是膜形成中溅射气体分子的平均自由程(mm),L是基板和靶之间的距离(mm)。 版权所有(C)2012,JPO&INPIT