专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013024731A Radiation detection instrument 审中-公开
标题翻译：辐射检测仪器
公开(公告)号：JP2013024731A
公开(公告)日：2013-02-04
申请号：JP2011159915
申请日：2011-07-21
申请人： Canon Inc , キヤノン株式会社
发明人： IWASAKI TATSUYA , YASUI NOBUHIRO , DEN TORU
IPC分类号： G01T1/20 , G01T1/36
CPC分类号： G01T1/202
摘要： PROBLEM TO BE SOLVED: To provide a radiation image sensor with energy discrimination capability, having a small number of components and a simple configuration.SOLUTION: A radiation detection instrument of the present invention includes a scintillator that emits light when irradiated with radiation, and an optical sensor array comprising two dimensionally arranged optical receivers for receiving the emitted light. The scintillator is structured to have a plurality of columnar portions composed of a first material embedded within a second material such that the light emitted inside the scintillator preferentially propagates in a specific direction, or the light propagation direction. When the scintillator is irradiated with radiation from a direction nonparallel to the light propagation direction, the light emitted inside the scintillator travels therein in the light propagation direction to be received by the optical sensor array placed on an end face of the scintillator.
摘要翻译：要解决的问题：提供具有能量鉴别能力的辐射图像传感器，具有少量的部件和简单的构造。解决方案：本发明的放射线检测仪器包括：用辐射照射时发光的闪烁体;以及包含二维布置的用于接收发射光的光学接收器的光学传感器阵列。闪烁体被构造为具有由嵌入第二材料内的第一材料构成的多个柱状部分，使得在闪烁体内发射的光优先沿特定方向或光传播方向传播。当闪烁体被从与光传播方向不平行的方向的辐射照射时，闪烁体内部发出的光在光传播方向上传播，以被放置在闪烁体的端面上的光学传感器阵列接收。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010093070A Field-effect transistor and its manufacturing method 有权
标题翻译：现场效应晶体管及其制造方法
公开(公告)号：JP2010093070A
公开(公告)日：2010-04-22
申请号：JP2008261878
申请日：2008-10-08
申请人： Canon Inc , キヤノン株式会社
发明人： IWASAKI TATSUYA , ITAGAKI NAHO
IPC分类号： H01L29/786 , H01L21/28 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/78618
摘要： PROBLEM TO BE SOLVED: To provide a field-effect transistor applying a semiconductor film comprising an oxide preventing a variation in TFT (thin-film transistor) characteristic and having a small variation in characteristic during irradiation of stray light to a channel when the TFT transistor characteristic (Id-Vg characteristic) of the thin-film transistor using an amorphous oxide fluctuates due to the incident near-ultraviolet light to the channel, and to provide its manufacturing method.
SOLUTION: The field-effect transistor includes a channel layer 11 comprising an oxide semiconductor, a source electrode 13 comprising oxynitride, and a drain electrode 14. This prevents the near-ultraviolet light from the source electrode 13 and the drain electrode 14 to the channel layer 11 to provide a relatively stable TFT for the light. Further, the stable electrical connections among the channel layer 11, and the source electrode 13 and the drain electrode 14 are achieved thereby improving the uniformity and the reliability of the element.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种场效应晶体管，其施加包含防止TFT（薄膜晶体管）变化的氧化物的氧化物的半导体膜，并且在将杂散光照射到通道时具有小的特性变化，使用非晶氧化物的薄膜晶体管的TFT晶体管特性（Id-Vg特性）由于入射到通道的近紫外光而波动并提供其制造方法。解决方案：场效应晶体管包括包括氧化物半导体的沟道层11，包含氧氮化物的源电极13和漏电极14.这防止了来自源电极13和漏电极14的近紫外光到沟道层11以提供用于光的相对稳定的TFT。此外，实现了沟道层11与源电极13和漏电极14之间的稳定的电连接，从而提高了元件的均匀性和可靠性。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009246330A Light-emitting film, light-emitting device and method of manufacturing the same 有权
标题翻译：发光膜，发光装置及其制造方法
公开(公告)号：JP2009246330A
公开(公告)日：2009-10-22
申请号：JP2008164465
申请日：2008-06-24
申请人： Canon Inc , キヤノン株式会社
发明人： OIKE TOMOYUKI , OHASHI RYOTA , IWASAKI TATSUYA
IPC分类号： H01L33/18 , H01L33/28
CPC分类号： C09K11/565 , H01L33/18 , H01L33/28 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. SOLUTION: The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material. The zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary, where the ZnS crystals are in contact with each other. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：使用这种发光膜提供可以以低电压驱动的可控电阻率的发光膜和高亮度发光器件。解决方案：发光膜包括作为基材的硫化锌化合物中的作为添加元素的Cu。硫化锌化合物包括柱状ZnS晶体以及ZnS晶体彼此接触的晶界上的硫化铜形成的部位。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009147069A Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：JP2009147069A
公开(公告)日：2009-07-02
申请号：JP2007322148
申请日：2007-12-13
申请人： Canon Inc , キヤノン株式会社
发明人： IWASAKI TATSUYA , ITAGAKI NAHO
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor using an amorphous oxide composed of the small number of elements, excellent in an environmental stability in atmospheric storage or the like, and having a low sensitivity for visible light.
SOLUTION: The field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode formed on a substrate. The channel layer is composed of an amorphous oxide material including at least In and Mg. The element ratio Mg/(In+Mg) of the morphous oxide material of the field-effect transistor is not less than 0.1 nor more than 0.48.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用由少量元素组成的无定形氧化物的薄膜晶体管，其在大气存储等环境稳定性方面优异，并且对可见光具有低灵敏度。解决方案：场效应晶体管至少包括形成在衬底上的沟道层，栅极绝缘层，源电极，漏电极和栅电极。沟道层由至少包含In和Mg的无定形氧化物材料构成。场效应晶体管的形态氧化物材料的元素比Mg /（In + Mg）不小于0.1，也不大于0.48。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009081413A Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：JP2009081413A
公开(公告)日：2009-04-16
申请号：JP2008146890
申请日：2008-06-04
申请人： Canon Inc , キヤノン株式会社
发明人： IWASAKI TATSUYA , ITAGAKI NAHO
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To provide a field effect transistor which can be manufactured at a low manufacturing temperature by using amorphous oxide composed of the small number of elements and has excellent environmental stability during storage in atmosphere.
SOLUTION: The field effect transistor is provided with a gate electrode 15, a source electrode 13, a drain electrode 14, and a channel electrode 11 to control a current flowing between the source electrode 13 and the drain electrode 14 by applying a voltage to the gate electrode 15, wherein amorphous oxide constituting the channel layer 11 contains In and Si and a compositional ratio expressed by Si/(In+Si) is 0.05 or more and 0.40 or less.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过使用由少量元素构成的无定形氧化物可以在低制造温度下制造的场效应晶体管，并且在大气中储存期间具有优异的环境稳定性。解决方案：场效应晶体管设置有栅电极15，源电极13，漏极14和沟道电极11，以通过施加源极电极13和漏电极14来控制流过源电极13和漏电极14的电流其中构成沟道层11的非晶形氧化物含有In和Si，Si /（In + Si）表示的组成比为0.05以上且0.40以下。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008214461A Phosphor film and phosphor film production method 有权
标题翻译：磷光体膜和磷光体膜生产方法
公开(公告)号：JP2008214461A
公开(公告)日：2008-09-18
申请号：JP2007052849
申请日：2007-03-02
申请人： Canon Inc , キヤノン株式会社
发明人： OIKE TOMOYUKI , IWASAKI TATSUYA
IPC分类号： C09K11/00 , C09K11/02 , C09K11/56 , C09K11/61 , C09K11/62 , C09K11/63 , C09K11/64 , H05B33/10 , H05B33/14
CPC分类号： C23C16/306 , C09K11/584 , C23C14/0629 , C23C14/5806 , C23C16/56
摘要： PROBLEM TO BE SOLVED: To provide a phosphor film high in luminous efficiency and low in luminance unevenness and to provide a phosphor film production method for producing the phosphor film. SOLUTION: The phosphor film is a phosphor film wherein a zinc sulfide compound is doped with additive elements, and the concentration of the additive elements is 0.2-5 mol% based on the Zn, and the film thickness of the phosphor film is 10 nm to 2 μm. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供发光效率高，亮度不均匀性低的荧光体膜，并提供用于制造荧光膜的荧光体膜制造方法。解决方案：荧光体膜是其中硫化锌化合物掺杂有添加元素的荧光膜，并且添加元素的浓度基于Zn为0.2-5mol％，荧光膜的膜厚为 10nm〜2μm。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007153702A Compound oxide comprising zinc and tungsten and having triclinic structure, and light emitting material 审中-公开
标题翻译：包含锌和钨的化合物，具有三重结构和发光材料
公开(公告)号：JP2007153702A
公开(公告)日：2007-06-21
申请号：JP2005353491
申请日：2005-12-07
申请人： Canon Inc , キヤノン株式会社
发明人： OHASHI RYOTA , OIKE TOMOYUKI , IWASAKI TATSUYA
IPC分类号： C01G41/00 , C09K11/00 , C09K11/02 , C09K11/68 , C23C14/34 , G01T1/20 , G01T1/202 , H01L31/09
CPC分类号： G21K4/00 , C09K11/682 , H05B33/145
摘要： PROBLEM TO BE SOLVED: To provide a compound oxide comprising zinc and tungsten, with a crystal system of a triclinic system, and a method of producing the same.
SOLUTION: A light emitting material is the compound oxide which comprises zinc and tungsten, with a crystal system of the triclinic system. The compound oxide is expressed by formula: Zn
X W
2-X O
4 and becomes the triclinic crystal when X is within the range of 0.5-1.5. The compound oxide has such a structure that a specified crystal plane of the triclinic Zn
X W
2-X O
4 crystal used as the light emitting material is grown nearly parallel to a substrate. The light emitting material is a columnar structure body extended in the direction nearly perpendicular to the substrate. The shape of the cross section in the direction parallel to the substrate of the columnar structure body is such that when the shape of each cross section is expressed in terms of a circle having the same area as that of the cross section, the average diameter of the circles is within the range of 50-500 nm.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供包含锌和钨的复合氧化物和三斜晶系的晶体体系及其制造方法。解决方案：发光材料是包含锌和钨的复合氧化物，具有三斜晶系的晶体系。复合氧化物由下式表示：当X在0.5的范围内时，其变为三斜晶体 -1.5。复合氧化物具有将三斜晶系的特定晶面用作发光的结构，其特征在于用于发光的三斜晶系的X 3 SB 材料生长几乎平行于基底。发光材料是沿与基板几乎垂直的方向延伸的柱状结构体。在与柱状结构体的基板平行的方向上的横截面形状为，当各横截面的形状用与截面相同面积的圆表示时，平均直径圆在50-500nm的范围内。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007073702A Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：JP2007073702A
公开(公告)日：2007-03-22
申请号：JP2005258271
申请日：2005-09-06
申请人： Canon Inc , キヤノン株式会社
发明人： ITAGAKI NAHO , IWASAKI TATSUYA
IPC分类号： H01L21/28 , H01L29/786 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor element having a low contact resistance between an electrode layer and a semiconductor layer, and having excellent adhesive properties and stability with time. SOLUTION: Adhesion improving layers 106 for improving adhesive properties between an oxide semiconductor layer and a precious-metal electrode are dispersed and arranged between the oxide semiconductor layer and the precious-metal electrode, and have sections in which the oxide semiconductor layer and the precious-metal electrode are brought into contact. The adhesion improving layers 106 are dispersed insularly or in a striped form. The adhesion improving layer 106 has a thickness of 10 nm or less, and contains at least one of Ti, Ni, Cr, V, Hf, Zr, Nb, Ta and Mo or W. At least one of Au, Pt or Pd is contained as a material for the previous-metal electrode 103. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供在电极层和半导体层之间具有低接触电阻的氧化物半导体元件，并且具有优异的粘合性和随时间的稳定性。解决方案：用于改善氧化物半导体层和贵金属电极之间的粘合性质的粘合改进层106被分散并布置在氧化物半导体层和贵金属电极之间，并且具有其中氧化物半导体层和使贵金属电极接触。粘附改善层106是分散的或条纹的形式分散的。粘附改善层106的厚度为10nm以下，并且含有Ti，Ni，Cr，V，Hf，Zr，Nb，Ta，Mo或W中的至少一种。Au，Pt或Pd中的至少一种为作为以前的金属电极103的材料。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006165531A Method of manufacturing field effect transistor 有权
标题翻译：制造场效应晶体管的方法
公开(公告)号：JP2006165531A
公开(公告)日：2006-06-22
申请号：JP2005325369
申请日：2005-11-09
申请人： Canon Inc , Tokyo Institute Of Technology , キヤノン株式会社 , 国立大学法人東京工業大学
发明人： YABUTA HISATO , SANO MASAFUMI , IWASAKI TATSUYA , HOSONO HIDEO , KAMIYA TOSHIO , NOMURA KENJI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a new method of manufacturing a field effect transistor. SOLUTION: Prior to forming an amorphous oxide layer on a substrate, the substrate surface is irradiated with ultraviolet rays in an ozone atmosphere, is irradiated with a plasma, or is cleaned with a chemical solution containing hydrogen peroxide. Alternatively, a process of forming an active layer, containing an amorphous oxide, is performed in an atmosphere containing at least one selected from the group consisting of ozone gas, nitrogen oxide gas and the like. Alternatively, heat treatment is performed at a temperature higher than the deposition temperature of an amorphous oxide layer after forming the amorphous oxide layer on the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造场效应晶体管的新方法。解决方案：在衬底上形成无定形氧化物层之前，在臭氧气氛中用紫外线照射衬底表面，用等离子体照射，或用含有过氧化氢的化学溶液进行清洗。或者，在含有选自臭氧气体，氮氧化物气体等中的至少一种的气氛中进行含有无定形氧化物的活性层的形成工序。或者，在基板上形成无定形氧化物层之后，在高于无定形氧化物层的沉积温度的温度下进行热处理。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2006073338A Electric field excited light emitting device and its manufacturing method 有权
标题翻译：电场激发发光器件及其制造方法
公开(公告)号：JP2006073338A
公开(公告)日：2006-03-16
申请号：JP2004254837
申请日：2004-09-01
申请人： Canon Inc , キヤノン株式会社
发明人： IWASAKI TATSUYA , DEN TORU , OIKAWA KATSUYA
IPC分类号： H05B33/22 , G09F9/30 , H01L27/32 , H05B33/10 , H05B33/14
CPC分类号： C09K11/574 , H01L51/52 , H01L2251/564 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide an electric field excited light emitting device excellent in light emission efficiency and stability.
SOLUTION: The electric field excited light emitting device comprises a triply gathering part 100 where the first part 101 of a first dielectric constant, the second part 102 of a second dielectric constant, and the third part 103 of a third dielectric constant make contact with one another; and a first and a second electrodes 11, 17 for applying a voltage to control an electric field of the triply gathering part and its vicinity; where at least any of the first, second, and third parts is a light emitter. The first and second electrodes are arranged so as for electrode surfaces of them to face each other, and the triply gathering part is composed of a closed curve (triply gathering lines closed into a closed curve) almost parallel to the electrode surfaces. The electric field excited light emitting device has a plurality of the closed curves in a same surface, where the length of the closed curve is ≥10 nm and ≤1 μm.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供发光效率和稳定性优异的电场激发发光装置。解决方案：电场激发发光器件包括三重聚集部分100，其中第一介电常数的第一部分101，第二介电常数的第二部分102和第三介电常数的第三部分103 彼此接触; 以及用于施加电压以控制三重收集部分及其附近的电场的第一和第二电极11,17; 其中第一，第二和第三部分中的至少任一个是光发射器。第一电极和第二电极被布置为使得它们的电极表面彼此面对，并且三重聚集部分由几乎平行于电极表面的闭合曲线（闭合的闭合曲线的三线收集线）组成。电场激发发光器件在相同的表面上具有多个闭合曲线，其中闭合曲线的长度为≥10nm且≤1μm。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式