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1. 发明专利

JPH0617474B2 失效
公开(公告)号：JPH0617474B2
公开(公告)日：1994-03-09
申请号：JP11795985
申请日：1985-05-31
申请人： CHISSO CORP
发明人： KUNIMUNE KOICHI , KUTSUZAWA KICHA , EGAWA TAIKAI , KONOTSUNE SHIRO
IPC分类号： C08G73/00 , C08G73/10 , C08G77/455

2. 发明专利

JPH02140232A LOW ELASTICITY POLYIMIDE AND ITS PRODUCTION 失效
公开(公告)号：JPH02140232A
公开(公告)日：1990-05-29
申请号：JP29436088
申请日：1988-11-21
申请人： CHISSO CORP
发明人： KONOTSUNE SHIRO , KAWAMOTO TAKAO , KIKUTA KAZUTSUNE
IPC分类号： C08G73/10 , C08G77/455
摘要： PURPOSE:To obtain a polyimide containing two specific kinds of recurring units at a specific ratio by conducting the reaction of the diamino components comprising a specific aromatic diamine and a specific silicone diamine with an aromatic tetracarboxylic acid anhydride in an organic polar solvent. CONSTITUTION:The reaction of the diamine components comprising 60 to 99 mole% of an aromatic diamine of formula I (X, Y are 1-4 alkyl; 1, m are 1 to 4) and a silicone diamine of formula II (R1 is 3-5 C alkylene; R2 is alkyl of 4 or less carbon atoms; n is 20 to 300), with an aromatic tetracarboxylic acid anhydride of formula III (Ar is tetravalent aromatic group) is conducted in an organic polar solvent at 20 to 250 deg.C to give a polyimide which contains 60 to 99 mole% of the recurring units of formula IV and 1 to 40 mole% of the recurring units of formula V, and has a low elasticity, high heat resistance and mechanical properties, (preferably satisfying the equation: 0.5

3. 发明专利

JPS62261152A FILM BETWEEN INTERCONNECTION LAYERS OF SEMICONDUCTOR DEVICE AND APPLIED SOLUTION FOR FORMING SAID FILM 失效
公开(公告)号：JPS62261152A
公开(公告)日：1987-11-13
申请号：JP10587586
申请日：1986-05-08
申请人： NEC CORP , CHISSO CORP
发明人： HONMA TETSUYA , EGUCHI KOHEI , KUNIMUNE KOICHI , KUTSUZAWA KICHIYA , NUMAZAWA YOICHIRO , YOSHIKAWA KIMIMARO , HAMANO KUNIYUKI , KONOTSUNE SHIRO
IPC分类号： H01L21/768 , C08G73/10 , C09D179/08 , H01L21/312 , H01L21/3205 , H01L23/522
摘要： PURPOSE:To make it possible to form a polyimide film by low temperature heat treatment, by specifying the ratio between an amido-acid group and an imide group in polyamide acid, which is formed by reacting a specified aminosilicon compound and diamine that does not include Si in the molecule with aromatic tetracarboxylic acid dianhydride. CONSTITUTION:An aminosilicon compound expressed by the Formula(where R and R are an alkyl group, whose independent number of carbon atoms is 1-6, or phenyl group, and K has value of 1 =0.1). Thus the polyamide acid is completely transformed into imide by low temperature heat treatment, and a polyimide film is formed.

4. 发明专利

JPS62261127A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62261127A
公开(公告)日：1987-11-13
申请号：JP10587686
申请日：1986-05-08
申请人： NEC CORP , CHISSO CORP
发明人： HONMA TETSUYA , EGUCHI KOHEI , KUNIMUNE KOICHI , KUTSUZAWA KICHIYA , NUMAZAWA YOICHIRO , YOSHIKAWA KIMIMARO , HAMANO KUNIYUKI , KONOTSUNE SHIRO
IPC分类号： H01L21/768 , C08G73/10 , C09D179/08 , H01L21/312 , H01L21/3205 , H01L23/522
摘要： PURPOSE:To enable a flat interlayer insulating film to be formed at low temperature by a method wherein the main surface of semiconductor substrate to form metallic multilayer interconnection is coated with a specific polyamide acid solution to be heat-treated later. CONSTITUTION:To enable a flat interlayer insulating film to be formed at low temperature, two processes are developed, i.e., one process is to coat the main surface of a semiconductor substrate to form metallic multilayer interconnection thereon with a polyamide acid solution with the ratio of amide acid group and imide group of 1:n(n>=0.1) formed by making amiosiloxane respresented by the molecular formula(1) and diamine containing no silane atom in molecule react to aromatic tetracarbonic acid dianhydride and the other process to heat treat the substrate later. The proper quantity range of mean molecular weight of polyamido acid is represented by the measured logarithm viscosity index of 0.05-5dl/g suluble in proper solvent.

5. 发明专利

JPS61103927A Production of silicone-polyimide precursor 失效
标题翻译：生产聚硅氧烷前体
公开(公告)号：JPS61103927A
公开(公告)日：1986-05-22
申请号：JP22727284
申请日：1984-10-29
申请人： Chisso Corp
发明人： KUNIMUNE HIKUICHI , KUTSUZAWA KICHIYA , KONOTSUNE SHIRO
IPC分类号： C08G73/00 , C08G73/10 , C08G77/54
CPC分类号： C08G77/54 , C08G73/106
摘要： PURPOSE: To obtain the titled precursor capable of giving exceptionally high adherability to glass or silicon wafer, also capable of affording coating film of both high hardness and strength after calcination, by the reaction between tetracarboxylic acid dianhydride, siliconediamine and aminosilicon compound in a constant proportion.
CONSTITUTION: (1) A moles of either one sort of tetracarboxylic acid dianhydride of formula I or a mixture thereof, (2) B moles of either one sort of siliconediamine with a number-average molecular weight 400W8,000 calculated through its amine value, of formula II or a mixture thereof and (3) C moles of either one sort of aminosilicon compound of formula III or a mixture thereof with the average value for the m is said formula ≥1.5 are brought to a blend so that the amounts of the above three components satisfy the relationships: 2A=2B+C and 0.1≤C/(B+C)
摘要翻译：目的：为了获得能够赋予玻璃或硅晶片特别高的粘合性的标题前体，还能够提供煅烧后具有高硬度和强度的涂膜，通过四羧酸二酐，硅二胺和氨基硅化合物以恒定比例的反应。构成：（1）式I的一种四羧酸二酐或其混合物的摩尔数，（2）通过其胺值计算的任何一种数均分子量为400-8,000的二羟基二胺的B摩尔，式（III）的混合物和（3）式C的氨基硅化合物或其混合物的C摩尔数与式上述三种成分满足以下关系：2A = 2B + C和0.1 <= C /（B + C）<1。然后使该共混物反应以获得式IV的客观前体。

6. 发明专利

JPH0757540B2 失效
公开(公告)号：JPH0757540B2
公开(公告)日：1995-06-21
申请号：JP3782989
申请日：1989-02-17
申请人： CHISSO CORP
发明人： KONOTSUNE SHIRO , TAKAHASHI ATSUSHI , FUKUNAGA SHOICHI , KIKUTA KAZUTSUNE
IPC分类号： B32B15/08 , B05D3/02 , B05D3/04 , B32B15/088 , H05K1/03 , H05K3/02

7. 发明专利

JPH0521140B2 失效
公开(公告)号：JPH0521140B2
公开(公告)日：1993-03-23
申请号：JP19119384
申请日：1984-09-12
申请人： CHISSO CORP
发明人： KONOTSUNE SHIRO , AZUMA HIROMI , WADA MASAKI , TSUJI KAZUYUKI , MAEHARA HIROSHI
IPC分类号： C08G77/00 , C08F30/08 , C08G77/48 , C08G77/50 , C08G81/02

8. 发明专利

JPS646025A PRODUCTION OF SILICON-CONTAINING POLYIMIDE HAVING LOW THERMAL EXPANSION AND HIGH ADHESIVITY AND PRECURSOR THEREOF 失效
公开(公告)号：JPS646025A
公开(公告)日：1989-01-10
申请号：JP16201887
申请日：1987-06-29
申请人： CHISSO CORP
发明人： KUNIMUNE KOICHI , KUTSUZAWA KICHIYA , KONOTSUNE SHIRO
IPC分类号： C08G73/10 , C09J179/08 , G02F1/1337
摘要： PURPOSE:To obtain the titled precursor useful as a composite material, etc., with an inorganic material owing to its low thermal expansion coefficient and high adhesivity, by reacting a tetracarboxylic acid dianhydride mixture having a specific composition with a diamine and an aminosilicone compound under specific condition. CONSTITUTION:A silicon-containing polyamic acid having a logarithmic viscosity number of 0.05-5dl measured in N-methyl-2-pyrrolidone at 30+ or -0.01 deg.C and a concentration of 0.5/dl is produced by reacting (a) an acid anhydride composition composed of A mol of pyromellitic dianhydride and A mol of 3,3',4,4'- biphenyltetracarboxylic acid dianhydride with (b) Bmol of a diamine of formula I (R is methyl, ethyl, etc.; m is 0, 1 or 2; n is 1 or 2) and (c) Cmol of an aminosilicone compound of formula II (R is 1-6C alkyl, phenyl, etc.; X is hydrolyzable alkoxy, halogen, etc.; k is 1, 2 or 3) provided that A and A satisfy the formula III and B and C satisfy the formula IV.

9. 发明专利

JPS6260415B2 失效
公开(公告)号：JPS6260415B2
公开(公告)日：1987-12-16
申请号：JP10850685
申请日：1985-05-21
申请人： CHISSO CORP
发明人： KUNIMUNE KOICHI , KONOTSUNE SHIRO
IPC分类号： C08G77/00 , C08G73/10 , C08G77/48 , C08G77/54 , C09D183/00

10. 发明专利

JPS62261148A FILM BETWEEN INTERCONNECTION LAYERS OF SEMICONDUCTOR DEVICE AND APPLIED SOLUTION FOR FORMING SAID FILM 失效
公开(公告)号：JPS62261148A
公开(公告)日：1987-11-13
申请号：JP10587186
申请日：1986-05-08
申请人： NEC CORP , CHISSO CORP
发明人： HONMA TETSUYA , EGUCHI KOHEI , KUNIMUNE KOICHI , KUTSUZAWA KICHIYA , NUMAZAWA YOICHIRO , YOSHIKAWA KIMIMARO , HAMANO KUNIYUKI , KONOTSUNE SHIRO
IPC分类号： H01L21/768 , C08G73/10 , C09D179/08 , H01L21/312 , H01L21/3205 , H01L23/522
摘要： PURPOSE:To obtain a film between interconnection layers of a semiconductor device, which has excellent adhesive property and in which a film haiving compression stress can be formed, and an applied solution for forming the film, by including a specified polyamide acid silicon type intermediate. CONSTITUTION:An applied solution for forming a film between interconnection layers includes a polyamide acid silicon type intermedaite, which is formed by mixing and reacting the following materials: tetracarboxylic acid dianhydride expressed by the Formula 1; diamine expressed by the Formula 2; and an aminosilicon compound expressed by the Formula 3. The film between the interconnection layers is formed by applying the solution on the main surface of a semiconductor substrate for forming a multilayer interconnection and performing heat treatemnt at a temperature of 100-450 deg.C. In the Formulas 1-3; R is a quadrivalent carbocyclic aromatic group; R is an aromatic- aliphatic group, whose number of carbon atoms is 6-30 or a carbocyclic aromatic group, whose number of carbon atoms is 6-30; R and R are an alkyl group, whose independent number of carbon atoms is 1-6 or a phenyl group; and K has a value of 1

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