专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH04198476A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH04198476A
公开(公告)日：1992-07-17
申请号：JP32607590
申请日：1990-11-29
申请人： CANON KK , OMI TADAHIRO , APPLIED MATERIALS JAPAN
发明人： OKAMURA NOBUYUKI , YAMAGAMI ATSUSHI , OMI TADAHIRO , SHIBATA SUNAO , GOTOU HARUHIRO
IPC分类号： C23C14/34 , C23C14/00 , C23C14/35 , C23C14/56 , C23C16/509 , H01J37/34 , H01L21/203
摘要： PURPOSE:To form a vapor deposited film having excellent quality with good productivity by forming a pressure difference in the internal space in the plasma treating device having electrodes for discharge for plasma generation and a deposition preventive plate enclosing the space between the electrodes. CONSTITUTION:An electric discharge is generated between a holder 1 of a target 5 and a holder 2 for a substrate 6 in an opposite direction by DC power sources 10, 11 or high-frequency power source in a vacuum chamber 8. Gas of Ar, etc., is simultaneously introduced from a gas introducing pipe 14 into the vacuum chamber and Ar cations are brought into collision against the target 5 by the plasma generated by the electric discharge to form the vapor deposited film consisting of the target material on a substrate 6 of a negative pole. The deposition preventive plate 3 having a narrow passage 15 is disposed between the two electrodes and a positive charge is previously imparted by a power source 16 thereto. The Ar atoms converted to the positive ions by the plasma generated by electric discharge between the two electrodes 1 and 2 extremely efficiently form the thin film having the excellent quality while the diffusion from the film forming region S1 to the outer region S2 of the deposition preventive plate is prevented by the deposition preventive plate 3.

IPRDB

热门服务

关于我们

友情链接

联系方式