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1. 发明专利

JP2006227648A Liquid crystal display and manufacturing method therefor 有权
标题翻译：液晶显示及其制造方法
公开(公告)号：JP2006227648A
公开(公告)日：2006-08-31
申请号：JP2006137935
申请日：2006-05-17
申请人： Advanced Display Inc , 株式会社アドバンスト・ディスプレイ
发明人： IWASA TOSHINORI
IPC分类号： G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display with a high aperture ratio, having proper display characteristics at a high yield, by being formed on TFT and wiring and suppressing the film reduction of an interlayer insulating film comprising a transparent resin used for surface planarization. SOLUTION: In a TFT array, having a structure forming a pixel electrode 12 having overlapping of source electrode wiring 6 or the like of a lower layer on the interlayer insulating film 10 by the formation of the interlayer insulating film 10, comprising the transparent resin on TFT 13 and the wiring, a gate insulating film 4 formed on the layer of a gate electrode 2a, is formed into the same pattern as that of a semiconductor layer 5 comprising amorphous silicon or the like. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了通过形成在TFT和布线上并且抑制包含透明树脂的层间绝缘膜的膜还原来提供具有高开口率的液晶显示器，以高产率具有适当的显示特性用于表面平坦化。解决方案：在TFT阵列中，通过形成层间绝缘膜10，具有形成具有与层间绝缘膜10上的下层的源电极布线6等重叠的像素电极12的结构，包括 TFT13上的透明树脂和布线，形成在栅极电极2a的层上的栅极绝缘膜4形成为与包含非晶硅等的半导体层5相同的图案。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006227649A Liquid crystal display and manufacturing method therefor 审中-公开
标题翻译：液晶显示及其制造方法
公开(公告)号：JP2006227649A
公开(公告)日：2006-08-31
申请号：JP2006137936
申请日：2006-05-17
申请人： Advanced Display Inc , 株式会社アドバンスト・ディスプレイ
发明人： IWASA TOSHINORI
IPC分类号： G02F1/1368 , G02F1/1343 , G02F1/1345 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display with a high aperture ratio, having proper display characteristics at a high yield, by being formed on TFT and wiring and suppressing the film decrease of an interlayer insulating film comprising a transparent resin used for surface planarity. SOLUTION: In a TFT array, having structure forming a pixel electrode 12 having overlap of source electrode wiring 6 or the like of a lower layer on the interlayer insulating film 10 by forming the interlayer insulating film 10, comprising the transparent resin on TFT 13 and the wiring, a gate insulating film 4 formed on the layer of a gate electrode 2a, is formed into the same pattern as that of a semiconductor layer 5 comprising amorphous silicon or the like. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了通过形成在TFT和布线上并且抑制包含透明树脂的层间绝缘膜的膜减少来提供具有高开口率的液晶显示器，具有以高产率具有适当的显示特性用于表面平面度。解决方案：在TFT阵列中，通过形成层间绝缘膜10，在层间绝缘膜10上形成具有与下层的源电极布线6等重叠的像素电极12的结构，该层间绝缘膜10包括透明树脂 TFT13和布线，形成在栅极电极2a的层上的栅极绝缘膜4形成为与包含非晶硅等的半导体层5相同的图案。版权所有（C）2006，JPO＆NCIPI

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