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1. 发明专利

JPH01209772A SUPERCONDUCTING CONTACT 失效
公开(公告)号：JPH01209772A
公开(公告)日：1989-08-23
申请号：JP3484188
申请日：1988-02-17
申请人： AGENCY IND SCIENCE TECHN
发明人： AKAHO HIROSHI , SHINOKI FUJITOSHI
IPC分类号： H01L39/22
摘要： PURPOSE:To provide high rapidity, high sensitivity and high accuracy by composing a lower electrode made of an oxide superconductor, a contact layer made of noble metal formed on the electrode, and an opposite electrode made of a superconductor formed on the layer. CONSTITUTION:A thin Y-Ba-Cu-O superconductor film 2 is formed as a lower electrode by a normal method on a substrate 1. The surface of the film 2 is processed with oxygen plasma in a high frequency oxygen plasma under the conditions of 1Torr of oxygen pressure, 11W of applying power and 21V of a DC bias voltage for 1 hour. A thin gold film 3 is deposited 300Angstrom as a contact layer, and a thin Nb film 4 is deposited as an opposite electrode on the film 3 by a depositing method or a reactive sputtering method. Thus, a superconducting current flows between the films 2 and 4.

2. 发明专利

JPS61220385A JOSEPHSON JUNCTION ELEMENT 失效
公开(公告)号：JPS61220385A
公开(公告)日：1986-09-30
申请号：JP6124485
申请日：1985-03-26
申请人： AGENCY IND SCIENCE TECHN
发明人： SHOJI AKIRA , SHINOKI FUJITOSHI
IPC分类号： H01L39/22
摘要： PURPOSE:To obtain excellent electrical characteristics and practically significant tunnel current density by constituting a Josephson junction element by a lower electrode and an upper electrode consisting of a superconducting thin-film and a tunnel-barrier composed of an amorphous magnesium oxide thin-film interposing between these both electrodes. CONSTITUTION:A niobium nitride film is deposited on a substrate 4 in a mixture of argon and nitrogen to form a lower electrode 1. An amorphous magnesium oxide thin-film in thickness of 10Angstrom or less is deposited on the lower electrode 1 by sputtering a MgO target at high frequency within the pressure or argon gas to shape a tunnel-barrier 3. Since an upper electrode 2 is composed of a niobium nitride film deposited in the mixture of argon and nitrogen in the same manner as the lower electrode 2 and the amorphous magnesium oxide thin-film is thermodynamically stable on deposition, a chemical reaction between the tunnel-barrier 3 and the upper electrode 2 is hardly generated, thus realizing the excellent electrical characteristics of an element.

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