会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明专利
    • PRODUCTION OF SINGLE CRYSTAL AND ITS PRODUCING APPARATUS
    • JPH1192267A
    • 1999-04-06
    • JP25483497
    • 1997-09-19
    • ADVANTEST CORP
    • WATABE TAKASHIABE SACHIKAZU
    • C30B7/02
    • PROBLEM TO BE SOLVED: To provide a single crystal producing method using solvent, capable of depositing and growing homogeneous single crystal from initial stage of crystal growth to the final stage by carrying out control so that growing rate of single crystal becomes constant and provide a producing apparatus using the method. SOLUTION: This single crystal-producing apparatus by solvent evaporation method is equipped with a growing tank 50 for depositing and growing single crystal, a discharge means 30 for discharging solvent vapor 26 of the growing tank 50, a solution tank 54 for evaporating the solvent of the solution, a heating means 90 for heating the solution tank 54, a control valve 60 for carrying out control feeding the solvent vapor of the solution tank 54 to the growing tank 50, a pressure detecting means 70 for detecting vapor pressure in the growing tank 50 and outputting pressure signal, a controller 80 for receiving the pressure signal of the pressure detecting means and controlling the above control valve so that solvent vapor pressure in the growing tank 50 becomes constant and a thermoregulated bath 40 for controlling the growing tank at definite temperature.
    • 6. 发明专利
    • Switching device, test device, switching method, and manufacturing method
    • 切换装置,测试装置,切换方法和制造方法
    • JP2011249182A
    • 2011-12-08
    • JP2010122334
    • 2010-05-28
    • Advantest Corp株式会社アドバンテスト
    • SATO YOSHIHIROABE SACHIKAZUWATABE TAKASHI
    • H01H1/04H01H11/04H01H37/52H01H55/00H01H57/00H01H59/00
    • PROBLEM TO BE SOLVED: To provide a switch having a contact at which pseudo-attachment does not occur even though the number of on/off operation times is increased.SOLUTION: A switching device comprises: a first contact; and a second contact on which a protection conductive layer is provided on a surface brought into contact with the first contact. The switching device comprises: a movable part for bringing the first contact into contact with the second contact or separating the first contact from the second contact; and a metal supply part for supplementing protection metal to the protection conducting layer. The switching device, a test device, a switching method, and a manufacturing method are provided. The second contact has a contact layer including metal for a contact, and the metal supply part deposits the protection metal from a side opposite from the first contact to the first contact side through the contact layer.
    • 要解决的问题:为了提供具有接触的开关,即使开/关操作次数增加,也不会发生伪附着。 解决方案:开关装置包括:第一触点; 以及第二触点,在与第一触点接触的表面上设置有保护导电层。 开关装置包括:用于使第一触点与第二触点接触或将第一触点与第二触点分开的可移动部件; 以及用于将保护金属补充到保护导电层的金属供给部件。 提供了开关装置,测试装置,开关方法和制造方法。 第二触点具有包括用于接触的金属的接触层,并且金属供给部分通过接触层将保护金属从与第一接触相反的一侧沉积到第一接触侧。 版权所有(C)2012,JPO&INPIT
    • 10. 发明专利
    • SEMICONDUCTOR SWITCH
    • JPH10163461A
    • 1998-06-19
    • JP31948896
    • 1996-11-29
    • ADVANTEST CORP
    • KONNO TAKESHIWATABE TAKASHI
    • H01L27/14H01P1/15
    • PROBLEM TO BE SOLVED: To obtain sufficient off-isolation when a high frequency signal like microwave is switched, by forming a predetermined capacitance between strip conductors and ground planar conductors. SOLUTION: In a semiconductor switch, strip conductors 2a, 2b isolated from each other by a fine gap 5, and coplanar lines composed of right and left ground planar conductors 3a, 3b are formed, and the whole surface is coated from above with a dielectric layer 4. Thereby a capacitor C is formed by the dielectric layer 4, between the right and left ground planar conductors 3a, 3b as earth and the strip conductors 2a, 2b as transmission lines. In such a semiconductor switch, an input signal when the switch is not irradiated with a light flows to ground through the conductors 3a, 3b. Thereby sufficient off-isolation can be obtained, and leakage of the input signal at the non-irradiation can be excluded.