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1. 发明专利

JP2017092224A 半導体装置用ボンディングワイヤの巻線構造有权
公开(公告)号：JP2017092224A
公开(公告)日：2017-05-25
申请号：JP2015220007
申请日：2015-11-10
申请人：田中電子工業株式会社 , Tanaka Electronics Ind Co Ltd
发明人： MIKAMI MICHITAKA , MAEDA NANAKO , CHEN I , ITO ANNA
IPC分类号： H01L21/60 , B65H54/28 , B65H55/04
CPC分类号： H01L2224/78
摘要：【課題】従来よりも締めつけ力が強く、かつ、輸送時の振動等にもに崩れしない新規なボンディングワイヤの巻線構造を提供する。また、ワイヤの無駄をなくし、スプールの交換作業をスムーズに行うことができるボンディングワイヤの巻線構造を提供する。【解決手段】整列巻のリード巻き部分とクロス多層巻きの本巻き部分と整列巻きのテール巻き部分とからなるスプール上に巻き取られたボンディングワイヤの巻線構造において、本巻き部分の両端形状が形作る少なくとも一方の斜辺にスプール端部から延びる下斜辺の仰角よりも急峻な仰角を有する中斜辺または上斜辺の突起部を形成し、突起部に波型のジグザグ層が連なり、かつ、当該上斜辺の頂点の高さが当該ジグザグ層の平均の高さよりも高くする。【選択図】図2

2. 发明专利

JP2012001746A Rectangular palladium (pd) or platinum (pt)-coated copper ribbon for high-temperature semiconductor element 有权
标题翻译：用于高温半导体元件的矩形铂（PD）或铂（PT） - 共价铜
公开(公告)号：JP2012001746A
公开(公告)日：2012-01-05
申请号：JP2010135624
申请日：2010-06-14
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MIKAMI MICHITAKA , NAKAJIMA SHINICHIRO , MATSUO HIROSHI , MIYAZAKI KENICHI
IPC分类号： C23C14/34 , H01L21/60
CPC分类号： H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/45 , H01L2224/45014 , H01L2224/45033 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/45669 , H01L2224/48472 , H01L2924/00011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/00 , H01L2924/00014 , H01L2924/01006 , H01L2924/00012 , H01L2924/01203 , H01L2924/013 , H01L2924/01204 , H01L2924/00013 , H01L2924/01205
摘要： PROBLEM TO BE SOLVED: To provide a bonding ribbon for connecting multiple Al pads improved in ultrasonic bondability and high-temperature reliability to multiple leads on a substrate side at the same time.SOLUTION: For the bonding ribbon formed of a palladium (Pd) or platinum (Pt)-coated copper core, the copper core is made of copper (Cu) having Vickers hardness ≤70 Hv and a purity ≥99.9% to be provided with conductivity and a loop forming property, and a coating layer is formed into a minute granular crystal structure by magnetron-sputtering palladium (Pd) or platinum (Pt) having a purity ≥99.9% onto a copper core tape at room temperature under a rare gas atmosphere of argon gas (Ar) or the like, whereby the Vickers hardness of the core is set identical to that of the coating layer to prevent damage of an aluminum pad, and to improve bondability.
摘要翻译：要解决的问题：提供一种用于将多个Al焊盘连接在一起的粘合带，其将超声粘合性和高温可靠性提高到基板侧的多个引线。解决方案：对于由钯（Pd）或铂（Pt）涂覆的铜芯形成的粘结带，铜芯由维氏硬度≤70Hv且纯度≥99.9％的铜（Cu）制成，具有导电性和环形成性，并且通过在室温下在铜芯带上将钯（Pd）或纯度≥99.9％的钯（Pd）或铂（Pt）溅射到铜芯带上，将涂层形成为微小的颗粒状晶体结构氩气（Ar）等的稀有气体气氛，由此将核心的维氏硬度设定为与涂层的维氏硬度相同，以防止铝焊盘的损坏，并提高粘合性。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2014070252A Copper platinum alloy fine wire for connecting semiconductor device 有权
标题翻译：用于连接半导体器件的铜铂合金细线
公开(公告)号：JP2014070252A
公开(公告)日：2014-04-21
申请号：JP2012217879
申请日：2012-09-28
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： AMANO HIROYUKI , MIKAMI MICHITAKA , OKAZAKI JUNICHI , HAMAMOTO TAKUYA , NAKAJIMA SHINICHIRO , YAMASHITA TSUTOMU , MITOMA SHUICHI , ONO KOSUKE , LIU BIN , SHIGYO HIROYUKI
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , H01B1/02 , H01B5/02
CPC分类号： H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/48463 , H01L2224/48824 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2224/45147 , H01L2924/01078 , H01L2924/01016 , H01L2924/01008 , H01L2924/01204 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20751 , H01L2924/01029 , H01L2924/00013 , H01L2924/01083 , H01L2924/00012 , H01L2924/01004
摘要： PROBLEM TO BE SOLVED: To improve second bondability as well as prevent breakage of a chip in ball bonding and improve looping property in a copper fine wire for ball bonding.SOLUTION: An ultra thin layer of copper not containing platinum due to segregation is formed in a process of forming a single wire by continuous casting from a molten copper platinum alloy containing high purity copper (Cu), 0.1 to 2.0 mass% of platinum (Pt), 1 to 10 mass ppm of sulfur (S), 10 to 150 mass of oxygen (O) and if necessary 1 to 5 mass ppm of phosphorus (P) as nonmetallic elements, and is oxidized in the air atmosphere to form an oxide film having 6 to 2 nm on a wire surface layer after wire drawing. Uniform oxide film improves second bondability as a bonding wire having a Vickers hardness of 77 to 105 Hv, prevents aluminum splash by preventing dynamic strength at ball bonding by a matrix additive element, and maintains static strength without generating leaning.
摘要翻译：要解决的问题：提高第二接合性以及防止球形接合中的芯片的断裂，并提高用于球接的铜细线中的环路性能。解决方案：由于偏析而形成不含铂的超薄铜层由含有高纯度铜（Cu），0.1〜2.0质量％的铂（Pt），1〜10质量ppm的硫（S），10〜150质量％的熔融铜铂合金通过连续铸造形成单丝的工序的氧（O），如果需要，作为非金属元素需要1〜5质量ppm的磷（P），并且在空气气氛中氧化，在拉丝后的线表面层上形成具有6〜2nm的氧化膜。均匀的氧化膜提高了维氏硬度为77〜105Hv的接合线的第二接合性，通过防止基体添加元素的球接合时的动态强度，防止铝飞溅，并且保持静电强度而不产生倾斜。

4. 发明专利

JP2011040522A Aluminum ribbon for ultrasonic bonding 有权
标题翻译：用于超声波接合的铝合金
公开(公告)号：JP2011040522A
公开(公告)日：2011-02-24
申请号：JP2009185552
申请日：2009-08-10
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MIKAMI MICHITAKA , KIKUCHI TERUO , NAKAJIMA SHINICHIRO , HIRATA YUICHI , NAKAMURA MASAHARU , KIMURA KEISUKE
IPC分类号： H01L21/60
CPC分类号： H01L2224/43 , H01L2224/43847 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/85205 , H01L2924/00014 , H01L2924/01006 , H01L2924/01202 , H01L2924/01028 , H01L2924/01014 , H01L2924/01012 , H01L2924/01029 , H01L2924/01005 , H01L2924/01049 , H01L2924/01003 , H01L2924/01004 , H01L2924/0102 , H01L2924/01038 , H01L2924/01039 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01083 , H01L2924/01204 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a bonding ribbon that performs bonding over the whole surface of a bonding surface each time even if the bonding is made several tens of thousand times and achieve a stable bonding strength, and is never cut in looping.
SOLUTION: The aluminum ribbon for ultrasonic bonding composed of an aluminum alloy of 99 mass% or more in purity has an ultrathin tape structure obtained by multistage wire drawing followed by roll milling. The ribbon has an average value of crystal grain diameter in a cross section of 5 to 200 μm, mirrored with a surface roughness R
z ≤2 μm, and subjected to immersion treatment or atmospheric treatment with a water-soluble hydrocarbon solvent, alcoholic solvent, ketone solvent or ether solvent higher in vapor pressure than water.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种粘结带，即使结合几十万次，也能够在接合面的整个表面上进行接合，并获得稳定的接合强度，并且不会在循环中被切割。解决方案：由纯度为99质量％以上的铝合金构成的超声波接合用铝带具有通过多次拉丝，随后辊磨得到的超薄带结构。带的平均晶粒直径在5〜200μm的横截面上，与表面粗糙度R z ≤2μm反映，并进行浸渍处理或大气处理，可溶性烃溶剂，醇溶剂，酮溶剂或醚溶剂，其蒸气压比水高。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010040763A Aluminum ribbon for ultrasonic bonding 有权
标题翻译：用于超声波接合的铝合金
公开(公告)号：JP2010040763A
公开(公告)日：2010-02-18
申请号：JP2008201994
申请日：2008-08-05
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MIKAMI MICHITAKA , KIKUCHI TERUO , HIRATA YUICHI , NAKAJIMA SHINICHIRO , SATO MATSUMI , KIMURA KEISUKE
IPC分类号： H01L21/60
CPC分类号： B21C37/047 , C22C21/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/432 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/4851 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01045 , H01L2924/01049 , H01L2924/01051 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01202 , H01L2924/01204 , H01L2924/01205 , H01L2924/014 , H01L2924/01003 , H01L2924/01004 , H01L2924/01039 , H01L2224/45139 , H01L2924/00012 , H01L2924/00 , H01L2924/013 , H01L2924/00013 , H01L2924/01203 , H01L2924/01059 , H01L2924/20304 , H01L2924/00014 , H01L2924/00015 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20105 , H01L2924/01006
摘要： PROBLEM TO BE SOLVED: To provide a bonding ribbon that homogeneously bonds over the whole surface of a junction surface each time even if the bonding is made several tens of thousand times, and achieves a stable bonding strength. SOLUTION: There is provided an aluminum ribbon for ultrasonic bonding consisting of an aluminum alloy of ≥99 mass% in purity, which includes the additive element and the balance composed of aluminum. This ribbon has an extremely thin tape structure obtained by rolling after multistage wire drawing, the average of the crystal grain diameter in the cross-section of the ribbon is 5 to 200 μm, and a ratio of thickness to width of the ribbon is 1/2 to 1/20. Preferably, an aspect ratio (width direction/thickness direction) of the crystal grain diameter is 0.5 to 10, and a mirror finish is made with a surface roughness of R z ≤2 μm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使结合几十万次，也能够每次均匀地结合在接合面的整个表面上的接合带，并且达到稳定的接合强度。解决方案：提供一种用于超声波接合的铝带，其由纯度为≥99质量％的铝合金组成，其包括添加元素和由铝组成的余量。该带具有通过多段拉丝后的轧制得到的非常薄的带状结构，带的横截面中的晶粒直径的平均值为5〜200μm，带的厚度与宽度的比为1 / 2到1/20。优选的是，晶粒直径的纵横比（宽度方向/厚度方向）为0.5〜10，并且制成表面粗糙度为R SB>≤2μm的镜面。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2014165272A Structure of copper thin nickel alloy wire for bonding semiconductor device 有权
标题翻译：用于结合半导体器件的铜镍合金线的结构
公开(公告)号：JP2014165272A
公开(公告)日：2014-09-08
申请号：JP2013033540
申请日：2013-02-22
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： AMANO HIROYUKI , MIKAMI MICHITAKA , OKAZAKI JUNICHI , HAMAMOTO TAKUYA , NAKAJIMA SHINICHIRO , YAMASHITA TSUTOMU , MITOMA SHUICHI , ONO KOSUKE , LIU BIN , SHIGYO HIROYUKI
IPC分类号： H01L21/60
CPC分类号： H01L2224/05124 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/43 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45247 , H01L2924/00 , H01L2924/01204 , H01L2924/01028 , H01L2924/013 , H01L2924/01047 , H01L2924/00013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01026 , H01L2924/01014 , H01L2924/0105 , H01L2924/01085 , H01L2924/01051 , H01L2924/01083 , H01L2924/01034 , H01L2924/01052 , H01L2924/01008 , H01L2924/01015 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a structure of a copper thin nickel alloy wire for bonding a semiconductor device in which second bondability is improved by preventing an irregularly thickened oxide layer from being grown just under a wire surface layer in a copper alloy bonding wire for the semiconductor device.SOLUTION: A structure of a copper thin nickel alloy wire for bonding a semiconductor device is formed from a surface layer, an internal oxide layer and a copper thin nickel alloy layer. A copper thin nickel alloy has an alloy composition in which nickel (Ni) in 0.1 to 1.5 mass% is uniformly dissolved in a high-purity copper (Cu) matrix of which the purity of 99.995 mass% or more, and the internal oxide layer is formed from a metal lacked copper-oxide matrix in which nickel oxide particles are uniformly and densely distributed towards the inside of the surface layer just under the copper oxide layer. Movement of free oxygen is made speedy and oxygen invading from the surface layer is dispersed inside. Therefore, irregular hemispherical growth of the copper oxide just under the surface layer is prevented and second bondability is improved. The internal oxide layer is made ticker than the surface layer oxide layer 60 times or more, thereby ensuring effects by moving oxygen.
摘要翻译：要解决的问题：提供一种用于接合半导体器件的结构，该半导体器件通过防止不规则增厚的氧化物层刚好在铜合金接合线中的线表面层下生长而提高第二结合性，半导体器件。解决方案：从表面层，内部氧化物层和铜薄镍合金层形成用于接合半导体器件的铜薄镍合金线的结构。铜薄镍合金具有将纯度为99.995质量％以上的高纯度铜（Cu）基质均匀溶解0.1〜1.5质量％的镍（Ni）和内部氧化物层的合金组成由金属氧化物基体形成，其中氧化镍颗粒均匀且密集地分布在氧化铜层正下方的表面层的内部。使游离氧的运动变得快速，并且从表面层侵入的氧分散在内部。因此，防止恰好在表面层下面的氧化铜的不规则半球生长，并且第二粘合性提高。使内部氧化物层比表面层氧化物层多出60次以上，由此确保氧气移动的效果。

7. 发明专利

JP2012084788A STRAIGHT ANGLE SILVER (Ag) CLAD COPPER RIBBON FOR HIGH-TEMPERATURE SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：用于高温半导体元件的直角银（Ag）覆铜箔
公开(公告)号：JP2012084788A
公开(公告)日：2012-04-26
申请号：JP2010231495
申请日：2010-10-14
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MIKAMI MICHITAKA , NAKAJIMA SHINICHIRO , MIYAZAKI KENICHI , MATSUO HIROSHI
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , B23K20/10 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/18 , B32B15/01 , B32B15/018 , H01L24/43 , H01L24/48 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/43848 , H01L2224/45014 , H01L2224/45015 , H01L2224/45032 , H01L2224/45033 , H01L2224/45139 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45639 , H01L2224/48247 , H01L2224/48456 , H01L2224/48458 , H01L2224/48472 , H01L2224/48507 , H01L2224/4851 , H01L2224/48724 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48864 , H01L2224/85424 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/8546 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/351 , H01L2924/01203 , H01L2924/01204 , H01L2924/01205 , H01L2924/00014 , H01L2224/45124 , H01L2924/00 , H01L2224/48824 , H01L2224/48744 , H01L2924/0002 , H01L2924/20111 , H01L2924/2076 , H01L2924/01206 , H01L2924/01049 , H01L2924/01004
摘要： PROBLEM TO BE SOLVED: To provide a silver clad copper ribbon for a high-temperature semiconductor element capable of improving the bonding reliability with a pad electrode interface and suppressing peel-off of a clad layer at a clad interface.SOLUTION: In a silver clad copper ribbon composed of a high-purity silver clad layer and a high-purity copper core material tape, a heat treatment is performed at a temperature of 450-750°C after clad processing to resolve a processing structure of the clad layer. Thereby, development of the processing structure composed of a high-distortion fine crystal structure in the clad layer, which is formed at a pad interface at bonding, is suppressed to reduce a hardness difference with the other regions of the clad layer and prevent clack generation. A fine granular crystal structure is formed under a high-temperature use environment to suppress dispersion of Al and the like from a pad layer and suppress generation of an intermetallic compound at the pad interface and clad interface. As a result, the bonding strength and the reliability can be improved.
摘要翻译：要解决的问题：提供一种能够通过焊盘电极界面改善焊接可靠性并抑制包覆界面处的覆层剥离的用于高温半导体元件的银包铜带。解决方案：在由高纯度银包层和高纯度铜芯材料带构成的银包铜带中，在包层加工后在450-750℃的温度下进行热处理以解决包层的加工结构。因此，抑制了在接合时在焊盘界面形成的包层中的由高失真的精细晶体结构组成的处理结构的发展，以减小与包覆层的其它区域的硬度差异，并且防止产生堆积。在高温使用环境下形成细粒状晶体结构，以抑制Al等从衬垫层的分散，并抑制焊盘界面和包层界面处的金属间化合物的产生。结果，可以提高接合强度和可靠性。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2008027951A Gold alloy for connecting semiconductor device 审中-公开
标题翻译：用于连接半导体器件的金合金
公开(公告)号：JP2008027951A
公开(公告)日：2008-02-07
申请号：JP2006195328
申请日：2006-07-18
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MIKAMI MICHITAKA
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , H01L2224/05624 , H01L2224/43 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48624 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01038 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01203 , H01L2924/01204 , H01L2924/01205 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/01032 , H01L2924/01003 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a gold alloy for connecting a semiconductor device in which breakage or stripping of a wire is prevented in heat cycle after bonding. SOLUTION: The gold alloy for connecting a semiconductor device consists of 0.01-2 mass% of Cu, 0.01-0.3 mass% of Ge, and the reminder of Au (a). Assuming a first additive element group contains total 1-100 mass ppm of one kind or two kinds of Be and In (b), a second additive element group contains total 1-100 mass ppm of one kind or more than one kind of Mg, Sn, Si, Ga, Bi and Sr (c), and a third additive element group contains total 1-50 mass ppm of one kind or two kinds of B and Li (d); any one or any two or three of the first, second and third additive element groups are added to the (a) alloy. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于连接半导体器件的金合金，其中在结合之后在热循环中防止线的断裂或剥离。
解决方案：用于连接半导体器件的金合金由0.01-2质量％的Cu，0.01-0.3质量％的Ge和Au（a）的提醒组成。假设第一添加元素基团含有总共1-100质量ppm的一种或两种Be和In（b），第二添加元素基团含有总共1-100质量ppm的一种或多于一种Mg， Sn，Si，Ga，Bi和Sr（c），第三添加元素基团含有总共1-50质量ppm的一种或两种B和Li（d）; 将第一，第二和第三添加元素基团中的任何一个或任何两个或三个添加到（a）合金中。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007142271A Bump material and bonding structure 审中-公开
标题翻译：阻燃材料和结合结构
公开(公告)号：JP2007142271A
公开(公告)日：2007-06-07
申请号：JP2005336077
申请日：2005-11-21
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： MIKAMI MICHITAKA , ARIKAWA TAKATOSHI
IPC分类号： H01L21/60
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a bonding structure with an Al pad electrode where the characteristic of an Ag-Au alloy is raised and bonding property is raised with an alloy bump, as a material for generating the bump with a wire or ball bump.
SOLUTION: The material contains 10-60 mass% of Au with high purity not less than 99.99% and, in a residue an Ag alloy with purity not less than 99.99% as a basic matrix. Additionally, 5-100 mass ppm of Li and B, 5-100 mass ppm of Ca, 1-20 mass ppm of Be, 5-100 mass ppm of rare-earth elements Y, La, Ce, Eu and/or Nd, and further, 10-500 mass ppm, in total, of at least one kind among Ge, Mg, Sr, Bi, Zn, Si, Ga, Sn and Sb, are selectively contained as trace additive elements. Thus, ball sphericity is raised in generating the wire bump. Accordingly, a tail is suppressed, and solder thinning resistance and bonding property are raised.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供与Al焊料电极的接合结构，其中Ag-Au合金的特性升高并且用合金凸块提高粘合性能，作为用电线产生凸点的材料，或球碰撞解决方案：该材料含有10-60质量％的Au，高纯度不低于99.99％，残留物中纯度不低于99.99％的Ag合金作为基体。此外，5-100质量ppm的Li和B，5-100质量ppm的Ca，1-20质量ppm的Be，5-100质量ppm的稀土元素Y，La，Ce，Eu和/或Nd，此外，Ge，Mg，Sr，Bi，Zn，Si，Ga，Sn和Sb中的至少一种为10-500质量ppm作为微量添加元素被选择性地含有。因此，在产生线凸块时球球度上升。因此，尾部被抑制，并且焊料变薄性和接合性提高。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2014075458A Copper rhodium alloy thin wire for connection of semiconductor device 有权
标题翻译：用于连接半导体器件的铜合金薄线
公开(公告)号：JP2014075458A
公开(公告)日：2014-04-24
申请号：JP2012221738
申请日：2012-10-03
申请人： Tanaka Electronics Ind Co Ltd , 田中電子工業株式会社
发明人： AMANO HIROYUKI , MIKAMI MICHITAKA , OKAZAKI JUNICHI , HAMAMOTO TAKUYA , NAKAJIMA SHINICHIRO , YAMASHITA TSUTOMU , MITOMA SHUICHI , ONO KOSUKE , LIU BIN , SHIGYO HIROYUKI
IPC分类号： H01L21/60 , C22C9/00 , C22F1/00 , C22F1/08
CPC分类号： H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/43 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48463 , H01L2224/85205 , H01L2924/00011 , H01L2924/01204 , H01L2924/01016 , H01L2924/01008 , H01L2924/01045 , H01L2924/00 , H01L2924/013 , H01L2924/01015 , H01L2924/01083 , H01L2924/00014 , H01L2924/01029 , H01L2924/00013 , H01L2924/00012 , H01L2924/01004
摘要： PROBLEM TO BE SOLVED: To suppress aluminum splash and leaning in the ultrasonic bonding of a copper alloy ball bonding wire, while enhancing second bondability of second bonding.SOLUTION: Into a metal matrix composed of raw material copper (Cu) having purity of 99.995 mass% or higher and 0.1-1.5 mass% of rhodium (Rh), 1.0-10 ppm by mass of sulfur (S) as a nonmetallic element and 10-150 ppm by mass of oxygen (O) are solid-dissolved, and 1-10 ppm by mass of phosphorus (P) is further solid-dissolved. Rhodium in the metal matrix suppresses segregation of sulfur to the ball surface thus controlling dynamic strength, and suppresses action of S in conjunction with solid-dissolved oxygen thus enhancing the leaning and second bondability.
摘要翻译：要解决的问题：为了抑制铜合金球接合线的超声波接合中的铝飞溅和倾斜，同时提高第二接合的第二接合性。解决方案：将由纯铜99.995质量份的原料铜（Cu）组成的金属基体铑（Rh）为0.1〜1.5质量％，非金属成分为1.0〜10质量ppm，氧（O）为10〜150质量ppm，固溶， 10质量ppm的磷（P）进一步固溶。金属基体中的铑可抑制硫与球表面的分离，从而控制动态强度，抑制S与固体溶解氧结合的作用，从而增强倾斜和第二粘结性。

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