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1. 发明专利

JP2014127280A Vacuum valve 审中-公开
标题翻译：真空阀
公开(公告)号：JP2014127280A
公开(公告)日：2014-07-07
申请号：JP2012281715
申请日：2012-12-25
申请人： Toshiba Corp , 株式会社東芝
发明人： NIWA YOSHIMITSU , YOSHIDA TAKESHI , SASAGE KOSUKE , SAKAGUCHI WATARU
IPC分类号： H01H33/664
摘要： PROBLEM TO BE SOLVED: To provide a vacuum valve that is able to avoid local erosion of an electrode by improving electromagnetic force acting on an arc and by preventing stagnation of arc.SOLUTION: In a vacuum valve according to the embodiment, a current flows in the axial direction of the power supply shaft. An electrode comprises: a center part to which the power supply shaft is joined; a contact part located on the outer periphery of the center part and projecting from the center part in the opposite direction of the power supply shaft; and a slit dividing the contact part into a plurality of arcuate parts such that the center part side is used as one end point, and the peripheral edge of the contact part is used as the other end point. The magnetic material is arranged on the peripheral edge of the power supply shaft along the power supply shaft side face of the electrode.
摘要翻译：要解决的问题：提供一种能够通过改善作用在电弧上的电磁力并防止电弧停滞而能够避免电极局部侵蚀的真空阀。解决方案：在根据实施例的真空阀中，电流流入电源轴的轴向。电极包括：电源轴接合的中心部分; 所述接触部位于所述中心部的外周并且从所述中心部向所述供电轴的相反方向突出; 以及将接触部分分割为多个弓形部分的狭缝，使得中心部分侧用作一个端点，并且接触部分的周边边缘用作另一个端点。磁性材料沿着电极的供电轴侧面设置在电源轴的周缘上。

2. 发明专利

JP2014072105A Vacuum valve 审中-公开
标题翻译：真空阀
公开(公告)号：JP2014072105A
公开(公告)日：2014-04-21
申请号：JP2012218796
申请日：2012-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAGUCHI WATARU , NIWA YOSHIMITSU , SATO JUNICHI , YOSHIDA TAKESHI , SASAGE KOSUKE
IPC分类号： H01H33/664
摘要： PROBLEM TO BE SOLVED: To improve cutoff characteristics by increasing a surface area of a contact point contact surface and reducing the amount of heat per unit area.SOLUTION: A vacuum valve has a pair of contact points capable of contacting with and separating from each other. The contact point includes an electrode 2 which generates a magnetic field firmly fixed to a current-carrying shaft 1; and a contactor 4 firmly fixed to the electrode 2. The contactor 4 is constituted of a contact surface 4a of the outer peripheral part, and an arc diffusion surface 4b connected to the contact surface 4a and having a recessed central part. The contact surface 4a has a predetermined current-carrying capacity. In the arc diffusion surface 4b, a surface area is increased as compared with a smooth surface and arc is diffused.
摘要翻译：要解决的问题：通过增加接触点接触面的表面积并减少每单位面积的热量来提高截断特性。解决方案：真空阀具有能够彼此接触和分离的一对接触点。接触点包括：电极2，其产生牢固地固定到载流轴1的磁场; 以及牢固地固定在电极2上的接触器4.接触器4由外周部的接触面4a和与接触面4a连接并具有凹入的中心部的电弧扩散面4b构成。接触表面4a具有预定的载流能力。在电弧扩散面4b中，与光滑表面相比，表面积增加，电弧扩散。

3. 发明专利

JP2013125618A Vacuum valve 审中-公开
标题翻译：真空阀
公开(公告)号：JP2013125618A
公开(公告)日：2013-06-24
申请号：JP2011272839
申请日：2011-12-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SOMEI HIROMICHI , SASAGE KOSUKE , YOSHIDA TAKESHI , SEKIMORI HIROKI , KATO KENJI
IPC分类号： H01H33/664
摘要： PROBLEM TO BE SOLVED: To suppress an electric field and improve voltage-withstanding characteristics even if brazing filler outflows to a contact and a joint portion of an electrode which generates a magnetic field, and coagulates.SOLUTION: A vacuum valve includes a vertical magnetic field electrode which is fixed to an electric conduction shaft 1 and generates a magnetic field, an electrode like a cup electrode, and a contact 3 jointed to the electrode with brazing filler containing silver as a main component. A joint portion of the electrode to which the contact 3 is jointed is positioned inside of the outer circumference of the contact 3.
摘要翻译：解决的问题：为了抑制电场，提高耐电压特性，即使钎焊剂向接触体和电极的接合部分流出而产生磁场并凝结。解决方案：真空阀包括固定到导电轴1并产生磁场的垂直磁场电极，类似于杯状电极的电极，以及用含有银的钎料将电极连接到电极上的触点3 一个主要组成部分。触点3接合的电极的接合部分位于触点3的外周的内侧。（C）2013，JPO＆INPIT

4. 发明专利

JP2012230876A Vacuum valve, and manufacturing method thereof 审中-公开
标题翻译：真空阀及其制造方法
公开(公告)号：JP2012230876A
公开(公告)日：2012-11-22
申请号：JP2011100185
申请日：2011-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA TAKESHI , SASAGE KOSUKE , SOMEI HIROMICHI , KATO KENJI
IPC分类号： H01H33/662
摘要： PROBLEM TO BE SOLVED: To facilitate manufacturing a vacuum insulation container which has a plurality of grooves provided on the inner surface thereof to increase a creepage distance.SOLUTION: A vacuum valve comprises: a vacuum insulation container 1 made from alumina ceramics; a fixed side sealing metal fitting 2 and a movable side sealing metal fitting 3 which are respectively sealed at both end openings of the vacuum insulation container 1; a fixed side electrification shaft 4 penetrated through and fixed to the fixed side sealing metal fitting 2; a fixed side contact 5 fixed to the fixed side electrification shaft 4; a movable side contact 6 which is freely brought into contact/out of contact with the fixed side contact 5; a movable side electrification shaft 7 for fixing the movable side contact 6, and for freely moving the movable side sealing metal fitting 3 therethrough; a freely extendable bellows 8 of which one end is sealed to an intermediate part of the movable side electrification shaft 7 and of which the other end is sealed to the movable side sealing metal fitting 3; and a spiral groove 9 provided in a spiral shape on the inner surface of the vacuum insulation container 1.
摘要翻译：要解决的问题：为了便于制造在其内表面上设置有多个槽以增加爬电距离的真空绝热容器。解决方案：真空阀包括：由氧化铝陶瓷制成的真空绝热容器1; 固定侧密封金属配件2和可动侧密封金属配件3，其分别密封在真空绝热容器1的两个端部开口处; 固定侧带电轴4穿过并固定到固定侧密封金属配件2; 固定侧固定侧接点5固定在固定侧带电轴4上; 可动侧接触件6，其自由地与固定侧接触件5接触/脱离接触; 用于固定可动侧触点6的可移动侧带电轴7，并且可移动侧密封金属配件3通过其移动; 可自由延伸的波纹管8，其一端被密封到可动侧带电轴7的中间部分，另一端密封到可动侧密封金属配件3; 以及在真空绝热容器1的内表面上呈螺旋状设置的螺旋槽9.版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2011249461A Solid-state image pickup device 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：JP2011249461A
公开(公告)日：2011-12-08
申请号：JP2010119418
申请日：2010-05-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA TAKESHI
IPC分类号： H01L27/146 , H04N5/3745
CPC分类号： H01L27/14603 , H01L27/14609
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pickup device which can suppress the deterioration of photosensitivity of a photodiode and the increase of noise signals owing to scale-down of the unit pixel size.SOLUTION: A solid-state image pickup device as an embodiment includes: a photodiode; a second diffusion layer; and means for setting a reference voltage. The photodiode has a first diffusion layer capable of accumulating carriers generated by an photoelectric effect, and is formed on a substrate. The second diffusion layer borders the first diffusion layer and has a polar character opposite to that of the first diffusion layer. The means for setting a reference voltage is connected with the second diffusion layer through wiring. The means for setting a reference voltage applies a variable voltage changing with time sharply to the first diffusion layer through the second diffusion layer, thereby setting a voltage based on the amplitude of the applied variable voltage as a reference voltage of the first diffusion layer.
摘要翻译：要解决的问题：提供一种固态摄像装置，其能够抑制由于单位像素尺寸的缩小而导致的光电二极管的光敏性的劣化和噪声信号的增加。解决方案：作为实施例的固态图像拾取器件包括：光电二极管; 第二扩散层; 以及用于设定参考电压的装置。光电二极管具有能够积聚由光电效应产生的载流子的第一扩散层，并形成在基板上。第二扩散层与第一扩散层相邻，具有与第一扩散层相反的极性。用于设定参考电压的装置通过布线与第二扩散层连接。用于设定参考电压的装置通过第二扩散层向第一扩散层施加随时间急剧变化的可变电压，从而基于所施加的可变电压的幅度设置电压作为第一扩散层的参考电压。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011061092A Solid-state image pickup device and manufacturing method thereof 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：JP2011061092A
公开(公告)日：2011-03-24
申请号：JP2009210917
申请日：2009-09-11
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO MARIKO , INOUE IKUKO , YOSHIDA TAKESHI
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14636 , H01L27/14645
摘要： PROBLEM TO BE SOLVED: To improve adhesion between a support substrate and a surface on which the substrate is attached, reduce defectiveness in attachment of the support substrate, and improve reliability of a solid-state image pickup device. SOLUTION: A solid-state image pickup device includes: a semiconductor substrate 10 having a first surface and a second surface opposed to the first surface; a pixel region 2 which is located in the semiconductor substrate 10 and has an element 21 for converting light incoming from the first surface to an electric signal; a peripheral region 3 which is adjacent to the pixel region 2 and has a circuit for controlling operation of the element in the pixel region; a plurality of interconnections 51, 52, 53 disposed in a plurality of interlayer insulating films 61, 62, 63, respectively, laminated on the second surface; and a support substrate 18 disposed on the interlayer insulating film 63 and the interconnection 53. At least the uppermost interconnection 53 is located within a groove P formed in the uppermost interlayer insulating film 63, and the height of the upper surface of the uppermost interconnection 53 coincides with the height of the upper surface of the uppermost interlayer insulating film 63. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高支撑基板与其上安装基板的表面之间的粘附性，减少了支撑基板的附着的缺陷，并提高了固态图像拾取装置的可靠性。解决方案：固态摄像装置包括：半导体衬底10，具有与第一表面相对的第一表面和第二表面; 位于半导体衬底10中并具有用于将从第一表面入射的光转换为电信号的元件21的像素区域2; 周边区域3，其与像素区域2相邻并且具有用于控制像素区域中的元素的操作的电路; 分别设置在层叠在第二面上的多个层间绝缘膜61,62,63中的多个布线51,52,53; 以及设置在层间绝缘膜63和互连53上的支撑基板18.至少最上面的布线53位于形成在最上层的绝缘膜63中的槽P内，并且最上面的互连53的上表面的高度与最上层间绝缘膜63的上表面的高度一致。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2012129535A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012129535A
公开(公告)日：2012-07-05
申请号：JP2012016765
申请日：2012-01-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA TAKESHI
IPC分类号： H01L31/10 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with improved photosensitivity.SOLUTION: A semiconductor device 1a comprises: a transparent substrate 12 that has flexibility and is transparent to visible light; a transparent electrode 14 provided on the transparent substrate; an organic semiconductor layer 16 provided on a portion of the surface of the transparent electrode opposite to the surface contacting the transparent substrate; and a reflective layer 71 provided above the surface of the organic semiconductor layer opposite to the surface contacting the transparent electrode.
摘要翻译：要解决的问题：提供具有改善的光敏性的半导体器件。解决方案：半导体器件1a包括：透明基板12，其具有柔性并且对可见光是透明的; 设置在透明基板上的透明电极14; 设置在与透明基板接触的表面相对的透明电极表面的一部分上的有机半导体层16; 以及设置在有机半导体层的与透明电极接触的表面相对的表面上方的反射层71。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2010040733A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010040733A
公开(公告)日：2010-02-18
申请号：JP2008201453
申请日：2008-08-05
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA TAKESHI
IPC分类号： H01L31/10
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/1464
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having improved light sensitivity. SOLUTION: A semiconductor device 1 comprises: a semiconductor thin film, having a light-incident surface 30b from which light enters and a photodiode portion 30a; an intermediate layer 62 having a convex surface 62a, provided above the surface of the semiconductor thin film on the side opposite to the light-incident surface 30b; and a convex reflecting layer 70, provided on the surface of the convex surface 62a and having a convex surface 70a which reflects light toward the photodiode portion 30a. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供具有改善的光敏度的半导体器件。解决方案：半导体器件1包括：具有光入射的光入射表面30b和光电二极管部分30a的半导体薄膜; 在半导体薄膜的与光入射面30b相反的一侧的表面上设置有具有凸面62a的中间层62; 以及设置在凸面62a的表面上并具有朝向光电二极管部30a反射光的凸面70a的凸面反射层70。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2015053169A 直流遮断用真空バルブ审中-公开
标题翻译：直流断路器真空阀
公开(公告)号：JP2015053169A
公开(公告)日：2015-03-19
申请号：JP2013184958
申请日：2013-09-06
申请人：株式会社東芝 , Toshiba Corp
发明人： SAKAGUCHI WATARU , NIWA YOSHIMITSU , YOSHIDA TAKESHI
IPC分类号： H01H33/664
摘要：【課題】通電と遮断の両特性を兼備した接点を有する真空バルブを用い、直流回路を開閉する。【解決手段】接離自在の一対の接点を有する直流遮断用真空バルブにおいて、接点は、中央部にざぐり穴5を設けた導電率の高い導電性合金よりなる通電用接点2と、通電用接点2の周りに設けられるとともに、通電用接点2よりも後退し、且つ円弧状の複数のスリット3を設けた電流裁断値の高い抵抗性合金よりなる遮断用接点4とを備え、通電用接点2と遮断用接点4を異種金属材料とし、通電特性と遮断特性を分担させることを特徴とする。【選択図】図1
摘要翻译：要解决的问题：提供具有导通特性和截止特性的触点的真空阀来打开/关闭DC电路。解决方案：具有一对可连接/可断开触点的直流断路器的真空阀包括：导电接点2，其由具有高导电性的导电合金形成，包括形成在中心的沉孔5; 以及由具有高电流切断值的高电阻金属形成的截止触点4，该电阻切断值位于比导电触头2低的导电触点2的周边上，并且形成有弧形的多个狭缝3 导电接点2和截止触点4分别由不同的金属材料形成，具有导电特性和截止特性。

10. 发明专利

JP2014222635A 真空バルブ审中-公开
标题翻译：真空阀
公开(公告)号：JP2014222635A
公开(公告)日：2014-11-27
申请号：JP2013102189
申请日：2013-05-14
申请人：株式会社東芝 , Toshiba Corp
发明人： SAKAGUCHI WATARU , NIWA YOSHIMITSU , ASARI NAOKI , YOSHIDA TAKESHI
IPC分类号： H01H33/662
摘要：【課題】アークに伴って発生する金属蒸気の拡散経路を狭め、真空絶縁容器内面への付着を抑制する。【解決手段】接離自在の一対の接点7、8と、接点7、8を収納する細径と太径とで構成された金属容器1と、細径となった両端開口部1aにそれぞれ封着された真空絶縁容器2、3と、接点7、8に固着されたそれぞれの通電軸6、9と、を有する真空バルブにおいて、接点7、8の外径よりも開口部1aの内径を小さくしたことを特徴とする。【選択図】図1
摘要翻译：要解决的问题：通过使与电弧一起产生的金属蒸气的扩散路径变窄来抑制金属蒸气在真空绝热容器的内表面上的粘附。解决方案：真空阀包括：一对触点7,8 自由地与彼此接触/分离; 金属容器1，其由小直径部分和大直径部分构成并容纳触点7,8; 分别密封到作为小直径部分的两端开口1a的真空绝热容器2,3; 和载流轴6,9分别固定在触头7,8上。使开口部1a的内径小于触点7,8的外径。

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