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    • 1. 发明专利
    • Method and apparatus for producing nitride crystal
    • JP5318803B2
    • 2013-10-16
    • JP2010055705
    • 2010-03-12
    • 日本碍子株式会社
    • 均 酒井克宏 今井真 岩井
    • C30B29/38C30B19/04C30B19/06H01L21/208
    • PROBLEM TO BE SOLVED: To enhance the growth rate of a crystal and to grow a high quality large crystal in a short period of time when the crystal is grown in a melt containing a flux and a raw material. SOLUTION: In a method for growing a nitride crystal, a growing container 2 for accommodating a melt 27 and growing the nitride crystal 14 by holding the melt in a supersaturated state; a first nitrogen dissolution container 1 for dissolving nitrogen into a melt 6 by heating the melt 6 and holding the resulting melt in an unsaturated state; a second nitrogen dissolution container 3 for dissolving nitrogen into a melt 28 by heating the melt 28 and holding the resulting melt in an unsaturated state; a first connection section 4 which connects the growing container 2 and the first nitrogen dissolution container 1 and communicates the melt in the growing container 2 to the melt in the first nitrogen dissolution container 1; and a second connection section 5 which connects the growing container 2 and the second nitrogen dissolution container 3 and communicates the melt in the growing container 2 to the melt in the second nitrogen dissolution container 3 are used. The growing container, the first nitrogen dissolution container, the second nitrogen dissolution container, the first connection section, and the second connection section are put in motion during growth of the crystal. COPYRIGHT: (C)2011,JPO&INPIT