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1. 发明专利

JP5568979B2 Detecting device, the light-receiving element array, and a manufacturing method of a detection device 有权
标题翻译：空值
公开(公告)号：JP5568979B2
公开(公告)日：2014-08-13
申请号：JP2009290659
申请日：2009-12-22
申请人：住友電気工業株式会社
发明人：博史稲田 , 康博猪口 , 陽一永井 , 大樹森 , 広平三浦
IPC分类号： H01L31/02 , H01L21/60 , H01L25/065 , H01L25/07 , H01L25/16 , H01L25/18 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/14618 , H01L27/14634 , H01L27/1469 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014

3. 发明专利

JP5061971B2 Method of manufacturing a semiconductor light-receiving element 有权
公开(公告)号：JP5061971B2
公开(公告)日：2012-10-31
申请号：JP2008060135
申请日：2008-03-10
申请人：住友電気工業株式会社
发明人：康博猪口
IPC分类号： H01L31/10

4. 发明专利

JP4737478B2 Food quality inspection equipment, food component inspection device, foreign matter component inspection equipment, taste inspection apparatus and transition state inspection equipment 有权
标题翻译：空值
公开(公告)号：JP4737478B2
公开(公告)日：2011-08-03
申请号：JP2011034998
申请日：2011-02-21
申请人：住友電気工業株式会社
发明人：陽一永井 , 康博猪口
IPC分类号： H01L31/10 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/359
摘要： PROBLEM TO BE SOLVED: To provide a food quality inspecting device capable of inspecting food quality at high sensitivity using an InP-based photodiode in which a dark current is reduced, without the use of a cooling mechanism and where a light reception sensitivity is enhanced to a wavelength ≥1.8 μm. SOLUTION: A light-receiving layer 3 has a multiple quantum well structure of a III-V semiconductor; a p-n junction 15 is formed by selectively dispersing an impurity element in the light-receiving layer; impurity concentration in the light-receiving layer is ≤5×10 16 /cm 3 ; a dispersion concentration distribution adjusting layer has an n-type impurity concentration of ≤2×10 15 /cm 3 before dispersion, and has a low impurity concentration range in a thickness range of the light-receiving layer side; and the inspection device receives a light of at least a single wavelength included in water absorbing zone of a wavelength ≤3 μm and executes inspection. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种食品质量检查装置，其能够使用其中暗电流降低的InP基光电二极管以高灵敏度检查食品质量，而不使用冷却机构，并且其中光接收灵敏度增强到≥1.8μm的波长。光接收层3具有III-V半导体的多量子阱结构; 通过选择性地将杂质元素分散在光接收层中形成p-n结15; 光接收层中的杂质浓度为≤5×10 16 / cm 3 ; 色散浓度分布调节层在分散前具有≤2×10 15 / cm 3 / SP>的n型杂质浓度，并且在厚度范围内具有低的杂质浓度范围的光接收层侧; 并且检查装置接收波长≤3μm的吸水区中包含的至少一个波长的光，并进行检查。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP4721147B1 Biological component detection device 有权
公开(公告)号：JP4721147B1
公开(公告)日：2011-07-13
申请号：JP2011034558
申请日：2011-02-21
申请人：住友電気工業株式会社
发明人：陽一永井 , 康博猪口
IPC分类号： H01L31/10 , A61B5/107 , A61B5/1455 , B82Y15/00 , B82Y20/00 , B82Y35/00 , G01N1/02 , G01N21/35 , G01N21/359
摘要：【課題】冷却機構なしで暗電流を減らし、受光感度を波長１．８μｍ以上に拡大したＩｎＰ系フォトダイオードを用いて、生体成分を高感度で検出することができる生体成分検出装置を提供する。
【解決手段】受光層３がＩＩＩ−Ｖ族半導体の多重量子井戸構造を有し、ｐｎ接合１５は不純物元素を受光層内に選択拡散して形成したものであり、受光層における不純物濃度が５×１０
１６／ｃｍ
３以下であり、拡散濃度分布調整層の拡散前のｎ型不純物濃度が２×１０
１５／ｃｍ
３以下であって受光層側の厚み範囲に低い不純物濃度範囲を有し、生体成分検出装置は、波長３μｍ以下の生体成分の吸収帯に含まれる、少なくとも１つの波長の光を受光して、検査をする。
【選択図】図３

6. 发明专利

JP3994655B2 Semiconductor light-receiving element 有权
公开(公告)号：JP3994655B2
公开(公告)日：2007-10-24
申请号：JP2000346869
申请日：2000-11-14
申请人：住友電気工業株式会社
发明人：美樹工原 , 康博猪口
IPC分类号： H01L27/14 , H01L31/10 , H01L23/48 , H01L27/15 , H01L31/04 , H01L31/102 , H01L31/103 , H01L31/105
CPC分类号： H01L31/1035 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00

7. 发明专利

JP5671849B2 受光素子アレイ、ハイブリッド型検出装置、および光学センサ装置有权
标题翻译：光电检测器阵列，所述混合型检测装置，和光学传感器装置
公开(公告)号：JP5671849B2
公开(公告)日：2015-02-18
申请号：JP2010143865
申请日：2010-06-24
申请人：住友電気工業株式会社
发明人：森　大樹 , 大樹森 , 博史稲田 , 博史稲田 , 広平三浦 , 広平三浦 , 永井　陽一 , 陽一永井 , 猪口　康博 , 康博猪口
IPC分类号： H01L31/02 , H01L27/146 , H01L31/10 , H04N5/33

8. 发明专利

JP5417694B2 A method of manufacturing a semiconductor device and epitaxial wafer 有权
公开(公告)号：JP5417694B2
公开(公告)日：2014-02-19
申请号：JP2007227648
申请日：2007-09-03
申请人：住友電気工業株式会社
发明人：広平三浦 , 康博猪口
IPC分类号： H01L21/205 , H01L21/203 , H01L31/10
CPC分类号： H01L31/109 , H01L21/02392 , H01L21/02463 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L21/02664 , H01L31/1844 , Y02E10/544 , Y02P70/521

9. 发明专利

JP5260909B2 Light-receiving device 有权
公开(公告)号：JP5260909B2
公开(公告)日：2013-08-14
申请号：JP2007190281
申请日：2007-07-23
申请人：住友電気工業株式会社 , 公立大学法人大阪府立大学
发明人：康博猪口 , 浩岡田 , 裕一河村
IPC分类号： H01L31/10
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/14649 , H01L31/03046 , Y02E10/544
摘要： A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

10. 发明专利

JP5218476B2 A method of manufacturing a semiconductor device, an optical sensor device and a semiconductor element 有权
公开(公告)号：JP5218476B2
公开(公告)日：2013-06-26
申请号：JP2010128162
申请日：2010-06-03
申请人：住友電気工業株式会社
发明人：慧藤井 , 勝史秋田 , 貴司石塚 , 英章中幡 , 康博猪口 , 博史稲田 , 陽一永井
IPC分类号： H01L31/10
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01L31/1844
摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z ‰¥ -0.4x + 24.6 is satisfied.

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