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    • 8. 发明专利
    • A method of manufacturing a semiconductor device
    • JP4959527B2
    • 2012-06-27
    • JP2007311025
    • 2007-11-30
    • リンテック株式会社
    • 修 山崎功 市川
    • H01L21/52
    • H01L24/75H01L2224/75304H01L2224/83191
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents the occurrence of voids in the interface between a wiring board and an adhesive layer. SOLUTION: In this method of manufacturing a semiconductor device, a chip provided with an uncured adhesive layer is die-bonded on the wiring board via the uncured adhesive layer and then the wiring board whereon the chip is die-bonded is heated to cure the uncured adhesive layer to fabricate a semiconductor device. The method of manufacturing a semiconductor device includes a holding process of holding the surface of the chip where the uncured adhesive layer is not formed by means of a collet having a recessed chip-holding surface; a die-bonding process wherein, after the outer periphery of the chip is brought into contact with the wiring board via the uncured adhesive layer, the chip is die-bonded on the wiring board so that the entire surface of the chip may be brought into contact with the wiring board via the uncured adhesive layer; and a static-pressure pressurization process wherein, before the curing of the uncured adhesive layer is finished, the wiring board with the chip die-bonded thereto is pressurized with a static pressure which is larger than the normal pressure by 0.05 MPa or above. COPYRIGHT: (C)2009,JPO&INPIT