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    • 5. 发明专利
    • Method and device for cutting single crystal
    • 用于切割单晶的方法和装置
    • JP2011003929A
    • 2011-01-06
    • JP2010210286
    • 2010-09-20
    • Freiberger Compound Materials Gmbhフライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングFreiberger Compound Materials Gmbh
    • HAMMER RALFGRUSZYNSKY RALFKLEINWECHTER ANDREFLADE TILO
    • H01L21/304B24B27/06B28D5/00B28D5/04G01N23/20
    • B28D5/0088B28D5/045G01N23/20016
    • PROBLEM TO BE SOLVED: To provide a method and a device for cutting a single crystal that can accurately cut the single crystal and enhance the wafer yield during the cutting.SOLUTION: The method for cutting the single crystal includes steps of: measuring the angle between a crystal surface of the single crystal and an external surface by a device 10 outside a cutting machine; measuring the orientation of the external surface 2 by the cutting machine after measuring the angle by using an autocollimation telescope 25; positioning the single crystal based upon the orientation of the external surface such that a predetermined crystal surface is at a predetermined angle to a feed direction; and cutting the single crystal. The step of measuring the angle between the crystal surface and external surface includes steps of: measuring the angle of the external surface to a reference axis by the autocollimation telescope 14; measuring the angle of the external surface to the reference axis by an X-ray goniometer; and subtracting the measured angles from each other so as to obtain a correction value, wherein the step of positioning the single crystal includes a step of positioning the single crystal based upon the measured orientation of the external surface and the obtained correction value using an orientation adjusting device 24.
    • 要解决的问题:提供一种用于切割单晶的方法和装置,其可以精确地切割单晶并提高切割期间的晶片产量。解决方案:用于切割单晶的方法包括以下步骤:测量 单晶的晶体表面和通过切割机外部的装置10的外表面; 在使用自动准直望远镜25测量角度之后,通过切割机测量外表面2的取向; 基于外表面的取向来定位单晶,使得预定晶体表面与进给方向成预定角度; 并切割单晶。 测量晶体表面和外表面之间的角度的步骤包括以下步骤:通过自动准直望远镜14测量外表面与参考轴线的角度; 通过X射线测角仪测量外表面与参考轴的角度; 并且相互减去测量的角度以获得校正值,其中定位单晶的步骤包括基于所测量的外表面的取向来定位单晶的步骤,并且使用取向调整来获得的校正值 装置24。