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2. 发明专利

JP2012153932A Nozzle 审中-公开
标题翻译：喷嘴
公开(公告)号：JP2012153932A
公开(公告)日：2012-08-16
申请号：JP2011013295
申请日：2011-01-25
申请人： Aisin Seiki Co Ltd , アイシン精機株式会社
发明人： SUMI RYOHEI , SHIMANO KAORU
IPC分类号： C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a nozzle capable of suppressing the dispersion of a film thickness of an object to be processed even while reducing a time and labor of maintenance work and improving the operating rate of a plasma CVD apparatus.SOLUTION: The nozzle is attached to the plasma CVD apparatus which executes deposition processing to the surface of the object 1 to be processed, and supplies a discharge gas and a deposition gas to a discharge space where the object 1 is arranged. A discharge gas flow path 14 for supplying the discharge gas and a deposition gas flow path 16 for supplying the deposition gas are separately provided. At an end on the downstream side of the discharge gas flow path 14, a discharge gas discharge port 15 for discharging the discharge gas is formed. Furthermore, at an end on the downstream side of the deposition gas flow path 16, a deposition gas discharge port 17 for discharging the deposition gas to a region for holding or surrounding the discharge gas discharged from the discharge gas discharge port 15 is formed.
摘要翻译：解决问题：即使在减少维护工作的时间和劳动力并提高等离子体CVD装置的运转速度的同时，也能够提供能够抑制待加工物体的膜厚分散的喷嘴。解决方案：将喷嘴安装在等离子体CVD装置上，该等离子体CVD装置对待处理对象物1的表面执行沉积处理，并将放电气体和沉积气体提供给放置物体1的放电空间。分别提供用于供给放电气体的放电气体流路14和用于供给沉积气体的沉积气体流路16。在放电气体流路14的下游侧的端部形成有用于排出放电气体的放电气体排出口15。此外，在沉积气体流路16的下游侧的端部，形成有用于将沉积气体排出到用于保持或围绕从排出气体排出口15排出的排出气体的区域的沉积气体排出口17。版权所有（C）2012，JPO＆INPIT

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