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1. 发明专利

JP2013207119A Thermoelectric conversion element 审中-公开
标题翻译：热电转换元件
公开(公告)号：JP2013207119A
公开(公告)日：2013-10-07
申请号：JP2012075206
申请日：2012-03-28
申请人： Shigeyuki Tsurumi , 重行鶴見
发明人： TSURUMI SHIGEYUKI
IPC分类号： H01L35/14
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric conversion element nontoxic, safe and reduced in weight to facilitate handling, or improved in a figure of merit of a thermoelectric material.SOLUTION: A thermoelectric conversion element is configured by forming a pn junction of a p-type semiconductor 1 and an n-type semiconductor 2. The p-type semiconductor 1 is formed by dispersing at least one of pulverized p-type germanium and pulverized p-type silicon at an amount of 15-70% in a volume ratio into one of a polymer material, a glass material and a ceramic material. The n-type semiconductor 2 is formed by dispersing at least one of pulverized n-type germanium and pulverized n-type silicon at an amount of 15-70% in a volume ratio into one of a polymer material, a glass material and a ceramic material.
摘要翻译：要解决的问题：提供无毒，安全且重量轻的热电转换元件，以便于处理，或改善热电材料的品质因数。解决方案：热电转换元件通过形成p的pn结型半导体1和n型半导体2.通过将体积比为15-70％的粉碎的p型锗和粉碎的p型硅中的至少一种分散成p型半导体1，形成为聚合物材料，玻璃材料和陶瓷材料之一。 n型半导体2通过将体积比为15-70％的粉碎的n型锗和粉碎的n型硅中的至少一种分散成聚合物材料，玻璃材料和陶瓷中的一种而形成材料。

2. 发明专利

JP2014090101A Thermoelectric conversion element 有权
标题翻译：热电转换元件
公开(公告)号：JP2014090101A
公开(公告)日：2014-05-15
申请号：JP2012239683
申请日：2012-10-30
申请人： Shigeyuki Tsurumi , 重行鶴見 , Yukio Shimo , 霜幸雄
发明人： TSURUMI SHIGEYUKI , SHIMO YUKIO
IPC分类号： H01L35/32 , H01L35/14 , H01L35/30
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric conversion element capable of maintaining favorable thermoelectric conversion efficiency.SOLUTION: A thermoelectric conversion element includes a p-type semiconductor 11, an n-type semiconductor 12, and an insulating layer 13 held between the p-type semiconductor 11 and the n-type semiconductor 12, and is configured by forming a pn-junction between the p-type semiconductor 11 and the n-type semiconductor 12. The insulating layer 13 is formed of powder of refractory bricks. The p-type semiconductor 11 is formed of powder obtained by mixing 15-70 vol.% of p-type semiconductor powder with powder of refractory bricks. The n-type semiconductor 12 is formed of powder obtained by mixing 15-70 vol.% of n-type semiconductor powder with powder of refractory bricks.
摘要翻译：要解决的问题：提供能够保持有利的热电转换效率的热电转换元件。解决方案：热电转换元件包括p型半导体11，n型半导体12和保持在p型半导体12之间的绝缘层13。型半导体11和n型半导体12，并且通过在p型半导体11和n型半导体12之间形成pn结构成。绝缘层13由耐火砖的粉末形成。 p型半导体11由通过将15-70体积％的p型半导体粉末与耐火砖粉末混合而获得的粉末形成。 n型半导体12由将15〜70体积％的n型半导体粉末与耐火砖粉末混合而成的粉末形成。

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