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    • 1. 发明专利
    • SURGE PROTECTION DEVICE
    • JPH11155232A
    • 1999-06-08
    • JP33789397
    • 1997-11-21
    • KK SOC
    • ARIKAWA HIROOMARUO MASAYA
    • H02H9/04
    • PROBLEM TO BE SOLVED: To prevent a load circuit against a large surge voltage by connecting a protection device, in which an internal resistance becomes very large momen tarily to the load circuit in series if an acute surge is impressed. SOLUTION: The drain of a depletion type N-type MOS 1 is connected to a positive terminal A of a power supply, and its source to a load circuit and its gate to a resistor 2 and a capacitor 3. Then, the other terminal of the resistor 2 which is not connected to the gate of the MOS 1 is connected to the source, and the other terminal of the capacitor 3 which is not connected to the gate of the MOS 1 is connected to the anode of a diode 4. Furthermore, the cathode of the diode 4 is connected to the ground terminal B of the power supply, and the other terminal of the load circuit which is not connected to the source of the MOS 1 is connected to the ground terminal B of the power supply.
    • 5. 发明专利
    • OVERCURRENT PROTECTIVE CIRCUIT
    • JP2000232726A
    • 2000-08-22
    • JP3269799
    • 1999-02-10
    • KK SOC
    • ARIKAWA HIROOMARUO MASAYA
    • H02H3/08H02H3/087H02H7/20
    • PROBLEM TO BE SOLVED: To make it possible to cope both with quick-acting type and with delayed type according to interrupting characteristic by detecting any overcurrent through a detection adjustment circuit connected between the drain and the gate of a p-type EMOS series-connected with a load and interrupting the p-type EMOS. SOLUTION: N- and p-type DMOSs 14 and 15 in a gate current control circuit 2 have their sources connected with each other so that voltage drop in one of them becomes equal to the gate voltage of the other, and their respective gates are connected with the other's drain through resistors 24 and 25. The drain of the n-type DMOS 14 is connected with a node 43, and the drain of the p-type DMOS 15 is connected with the source of a p-type DMOS 16. If p-type EMOSs 11 and 12 are brought into conduction by overcurrent in a load 7, the constant-current state maintained by resistors 27 and 23 and the p-type DMOS 16 be comes unstable, and a large current flows to the gate current control circuit 2 through the resistor 23. However, the n-type and p-type DMOSs 14 and 15 have their gate voltage increased to above a threshold voltage and are brought out of conduction to interrupt the current flowing to the gate current control circuit 2.