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1. 发明专利

JPH06196949A SEMICONDUCOTOR AMPLIFIER 失效
公开(公告)号：JPH06196949A
公开(公告)日：1994-07-15
申请号：JP24111891
申请日：1991-09-20
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： SANO SEIGO
IPC分类号： H03F3/60
摘要： PURPOSE:To attain a semiconductor amplifier capable of executing F class operation by which high efficiency can be obtained by a simple circuit constitution. CONSTITUTION:The semiconductor amplifier is provided with a semiconductor chip 1 consisting of a transistor(TR) to be an amplifier circuit connecting an input side circuit 2 to an output side circuit 3, a coupler 4A constituted of arranging a line with lambdag/8 electric length in parallel to an input side waveguide 5 through a slight gap, a coupler 4B constituted of arranging a line with lambdag/8 electric length in parallel to an output side waveguide 6 through a light gap, and a line 7 connecting both the couplers 4A, 4B and constituted so that the power of higher harmonic 2f0 corresponding to twice of reference frequency f0 sent from the output side is injected to the input side through the couplers 4B, 4A.

2. 发明专利

JPH06188654A HIGH FREQUENCY AMPLIFIER 失效
公开(公告)号：JPH06188654A
公开(公告)日：1994-07-08
申请号：JP33863592
申请日：1992-12-18
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： HIRAYAMA MASAHIRO , KUWABARA YOSHIYASU
IPC分类号： H03F3/60 , H03H7/00
摘要： PURPOSE:To improve the impedance at a low frequency region in which abnormal oscillation might be often caused and to attain a stable operation by acting a bias application circuit as an inductance in a transmission frequency region. CONSTITUTION:A bias application circuit 1 consists of a microstrip line ML acting like an inductance and a capacitor C and applies a bias voltage to a transistor(TR) 2 and keeps a high impedance state to the TR 2 in a transmission frequency region. A matching circuit 3 applies matching between the impedance of a transmission wave input side and that of a transmission wave output side. A resonance circuit 4 consists of a capacitor Ca, a coil La, a resistor Ra and a capacitor Cb. Since the bias application circuit acts likes an inductance in the transmission frequency region, a high impedance state is kept to the TR 2 and a resonance circuit 4 keeps the high impedance state in a low frequency region at the outside of the transmission frequency.

3. 发明专利

JPH06132230A ORGANIC METAL VAPOR GROWTH APPARATUS 失效
公开(公告)号：JPH06132230A
公开(公告)日：1994-05-13
申请号：JP28118292
申请日：1992-10-20
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： GOTO OSAMU
IPC分类号： C30B25/02 , H01L21/205
摘要： PURPOSE:To provide an organic metal vapor growth apparatus in which the whole surface of a substrate is uniformly heated to grow a compound semiconductor crystal of a uniform composition. CONSTITUTION:In an organic metal vapor growth apparatus wherein a substrate 1 is mounted on a table 13 in contact with the upper surface of a heating element 11, which is heated by high frequency induction heating, thereby heating the substrate 1 through the table 13 by thermal conduction, a plurality of ring- shaped recessed parts 11a of different diameters are concentrically provided on the upper surface of the heating element 11, and a plurality of filler rings 14 are prepared which are equal in size and shape to the individual ring-shaped recessed parts 11a. First, the filler rings 14 are inserted into all the ring-shaped recessed parts 11a, and thereafter the filler rings 14 are removed as appropriate and a cooling gas is made flow into the particular ring-shaped recessed parts 11a, thereby decreasing the temperature distribution of the heated substrate.

4. 发明专利

JPH06122590A MOLECULAR BEAM SOURCE CELL AND MOLECULAR BEAM CRYSTAL GROWTH APPARATUS 失效
公开(公告)号：JPH06122590A
公开(公告)日：1994-05-06
申请号：JP27329692
申请日：1992-10-13
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： IGARASHI TAKESHI
IPC分类号： C23C14/24 , C30B23/08 , H01L21/203
摘要： PURPOSE:To provide a structure reduced in consumption of materials in relation to a molecular beam source cell. CONSTITUTION:The constitution of this molecular beam source cell is characterized in that the inner wall 18 of a crucible constituting the molecular beam source cell has one or more planes 19 of symmetry and the cross line between an arbitrary plane 20 perpendicular to the plane of symmetry and the inner wall of the crucible is non-circular.

5. 发明专利

JPH0645282A MANUFACTURING METHOD AND DEVICE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0645282A
公开(公告)日：1994-02-18
申请号：JP4814392
申请日：1992-03-05
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： OGIWARA TOSHIHIRO , NUNOKAWA MITSUJI
IPC分类号： H01L21/288 , C25D5/02 , C25D5/08 , C25D7/12 , H01L21/321 , H01L21/60
摘要： PURPOSE:To form a bump on the front surface of a wafer by electroplating without causing abnormal projection on the front surface of the wafer concerning a method and device for forming a bump on the front surface of a wafer. CONSTITUTION:Initially, a conductive film 2 that acts as a substrate for plating is formed over the font surface of a wafer 1 by sputtering. The conductive film 2 is also formed on the side and rear surfaces of the wafer 1. After a resist pattern 4 has been formed on the front surface of this wafer 1, this wafer 1 is horizontally set on a wafer support ring 12 with the front surface side thereof facing downwards. A cathode terminal 16 is brought into contact with either the periphery or the side surface of the rear surface of the wafer, and a bump 5 is formed on the front surface side of the wafer 1 by the jet type electroplating method.

6. 发明专利

JPH05243286A 失效
公开(公告)号：JPH05243286A
公开(公告)日：1993-09-21
申请号：JP4266492
申请日：1992-02-28
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： HASEGAWA YUICHI , ICHIKAWA SHINICHIRO
IPC分类号： H01L21/52
摘要： PURPOSE:To prevent the element breakage by the occurrence of cracks and the electric inferiority in connection, concerning an FET using a large area of group III V compound semiconductor chip. CONSTITUTION:In a semiconductor device where a chip 3 consisting of a semiconductor thin piece where a semiconductor circuit 1a is made on the surface and a metallic film 2 is provided at the rear is die-bonded on a substrate, a dividing groove 4 for demarcating the position where the semiconductor thin piece 1 breaks and is divided when stress is applied when stress is applied to the semiconductor thin piece 1 is provided at the surface of the semiconductor thin piece 1. Furthermore, the semiconductor circuit 1a is arranged being divided into a plurality of regions being made by the dividing groove 4 separating the surface of the semiconductor thin piece 1, and the electric connection of divided each part of the semiconductor circuit 1a is performed by the wiring outside the semiconductor circuit 1a, and each thin piece of the semiconductor thin piece 1, broken and divided from the position of the dividing groove 4, is retained by the metallic film 2 provided all over the rear of the semiconductor thin piece 1.

7. 发明专利

JPH04284648A WAFER HOLDING DRY-CHUCK RUBBER 失效
公开(公告)号：JPH04284648A
公开(公告)日：1992-10-09
申请号：JP4854591
申请日：1991-03-14
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： HIRANO HIDENORI
IPC分类号： H01L21/683 , H01L21/68
摘要： PURPOSE:To provide the dry-chuck rubber capable of smoothly inserting a metallic spatula for removing the vacuum chuck loaded with a wafer as it is in relation to the title wafer holding dry-chuck rubber to be interposed between the wafer and the vacuum chuck suction-holding the wafer to be processed. CONSTITUTION:The title wafer holding dry-chuck rubber comprising a sheet rubber 3a is provided with the separation means (the trenches 4 in this embodiment as shown in Fig.1) scattered on the surface 3c in the vacuum chuck side so that the sheet rubber 3a may not be partially brought into contact with the suction surface of the vacuum chuck. Within the other embodiments, said separation means may be either the roughened surface of a metallic film and the rubber 3a or the protrusions formed into one bodies in the rubber 3a.

8. 发明专利

JPH04252036A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04252036A
公开(公告)日：1992-09-08
申请号：JP165191
申请日：1991-01-10
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： KOJIMA MASAKAZU , AOKI YOSHIO , SANO SEIGO
IPC分类号： H01L21/3205 , H01L21/338 , H01L23/52 , H01L29/417 , H01L29/423 , H01L29/812
摘要： PURPOSE:To achieve that a chip is hard to break and to make a high-frequency characteristic excellent regarding a semiconductor device provided with a high- output semiconductor transistor. CONSTITUTION:The title device is constituted so as to include the following: a plurality of first electrodes 5 which have been extended, in a comb shape, from both sides of a first pad 4 formed on a semiconductor layer 1; second pads 9, 10 which are situated around open end sides of the first electrodes 5 and which have been formed on said semiconductor layer 1; a plurality of second electrodes 11 which have been installed at the first electrodes 5 so as to be close to each other at definite intervals and which have been extended in a comb shape, form the second pads 9, 10; a pad 12, for gate use, which has been formed in the central region of the first pad 4 so as to be separated electrically from the first pad; a plurality of gate electrodes 14 which have been connected to the pad 12 for gate use and which have been arranged on the semiconductor layer 1 between the first electrodes 5 and the second electrodes 11.

9. 发明专利

JPH06237036A ANALOG MODULATOR FOR SEMICONDUCTOR LASER 失效
公开(公告)号：JPH06237036A
公开(公告)日：1994-08-23
申请号：JP28849291
申请日：1991-11-05
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： KOBAYASHI NOBUO
IPC分类号： H03C1/34 , H01S5/06 , H04B10/2507 , H04B10/40 , H04B10/50 , H04B10/516 , H04B10/564 , H04B10/58 , H04B10/60 , H01S3/103 , H04B10/04 , H04B10/06
摘要： PURPOSE:To provide an analog modulation type transmission system proper to the transmission of a long span by low distortion by using a laser chip, in which a coupling coefficient is changed, and adjusting the degree of modulation regarding an analog modulator for a semiconductor laser enabling long- distance transmission. CONSTITUTION:In an analog modulator for a semiconductor laser, in which a modulation signal is overlapped to the specified bias of a semiconductor laser diode 1 and analog modulation is conducted, a bias-current adjusting device 5, in which a laser chip, in which a gradient to bias currents of the differential efficiency of an optical output draws a quadratic curve, is used as a laser diode and which imparts a bias value at a point, where the gradient reaches zero, and an amplitude adjusting device 6 adjusting the degree of modulation of a modulation signal are provided.

10. 发明专利

JPH06164254A HIGH FREQUENCY AMPLIFIER CIRCUIT 失效
公开(公告)号：JPH06164254A
公开(公告)日：1994-06-10
申请号：JP31547192
申请日：1992-11-26
申请人： FUJITSU LTD , FUJITSU KANTAMU DEVICE KK
发明人： SANO SEIGO
IPC分类号： H03F1/02 , H03F3/19
摘要： PURPOSE:To increase a voltage range that contribute to an amplifying action, to attain the effective use of the power voltage, and to acquire a useful technique for the use of the power voltage of a low level by setting the value of a resistance element at a level larger than a prescribed level and also smaller than infinity. CONSTITUTION:A line A' shows a load line defined when the value of a resistance element R is calculated from an equation, i.e., the line A' is equivalent to a conventional load line defined when the value of the element R is set at RLJ. A line B shows a load line that has a slant smaller than the load line A'. The value RL of the element R can be set larger (limited less than infinity) than the value RLJ for the load line B. In the equation, VDS shows the drain- source voltage (or collector-emitter voltage) of a transistor TR and ID shows the largest saturated current that can be supplied by the TR. As a result, a voltage range that contribute to an amplifying action is increased and the power voltage is effectively used. Then a useful technique is acquired for the use of the power voltage of a low level in particular.

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