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1. 发明专利

JP2010045037A Large area microwave plasma apparatus with adaptable applicator 审中-公开
标题翻译：大面积微波等离子体设备与适应适应器
公开(公告)号：JP2010045037A
公开(公告)日：2010-02-25
申请号：JP2009211797
申请日：2009-09-14
申请人： Energy Conversion Devices Inc , エナージーコンバーションデバイセスインコーポレイテッドEnergy Conversion Devices, Inc.
发明人： DOEHLER JOACHIM
IPC分类号： H05H1/46 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32229 , H01J37/32192
摘要： PROBLEM TO BE SOLVED: To provide a microwave plasma apparatus for sustaining substantially uniform plasma over a relatively large area, easily adaptable for usage in a various microwave frequencies. SOLUTION: The large area microwave plasma apparatus is composed of: a vacuum vessel 12 for sustaining plasma in plasma regions 20, 20a; a means in the vacuum vessel 12 for supporting a substrate in parallel with the plasma regions 20, 20a; a means for sustaining the vacuum vessel 12 at a desired pressure; means 18, 18a for introducing action gas into the vacuum vessel 12; a non-evanescent microwave applicator 40 with a means for controlling cutoff wavelength, wherein at least part of the microwave applicator 40 extends into the vacuum vessel 12 and irradiates microwave energy from a power source into the vacuum vessel 12; and a means 60 for gas-insulating the applicator 40 from the plasma regions 20, 20a. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种微波等离子体装置，用于在相对较大的区域上维持基本上均匀的等离子体，容易适用于各种微波频率的使用。解决方案：大面积微波等离子体装置包括：用于在等离子体区域20,20a中维持等离子体的真空容器12; 在真空容器12中用于与等离子体区域20,20a平行地支撑衬底的装置; 用于在期望压力下维持真空容器12的装置; 用于将动作气体引入真空容器12的装置18,18a; 具有用于控制截止波长的装置的非消逝微波施加器40，其中微波施加器40的至少一部分延伸到真空容器12中并将来自电源的微波能量照射到真空容器12中; 以及用于将施涂器40从等离子体区域20,20a进行气体绝缘的装置60。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008234826A Increased data storage in optical data storage and retrieval system using blue laser and/or plasmon lens 审中-公开
标题翻译：使用蓝色激光和/或PLASMON镜头的光学数据存储和检索系统中数据存储的增加
公开(公告)号：JP2008234826A
公开(公告)日：2008-10-02
申请号：JP2008048543
申请日：2008-02-28
申请人： Energy Conversion Devices Inc , エナージーコンバーションデバイセスインコーポレイテッドEnergy Conversion Devices, Inc.
发明人： OVSHINSKY STANFORD R , STRAND DAVID , TSU DAVID
IPC分类号： G11B7/24 , B41M5/26 , G11B5/58 , G11B7/00 , G11B7/004 , G11B7/0045 , G11B7/0055 , G11B7/006 , G11B7/09 , G11B7/095 , G11B7/125 , G11B7/135 , G11B7/243 , G11B7/251 , G11B7/257 , G11B11/03 , G11B11/105 , G11B11/11 , G11B11/115 , G11B11/12 , G11B15/04 , G11B19/04 , G11B20/18 , G11B27/36
CPC分类号： B82Y10/00 , G11B7/00454 , G11B7/00557 , G11B7/006 , G11B7/1275 , G11B7/1374 , G11B7/1387 , G11B7/24065 , G11B7/243 , G11B7/2433 , G11B7/251 , G11B7/252 , G11B7/2531 , G11B7/2534 , G11B7/257 , G11B7/2585 , G11B7/259 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： PROBLEM TO BE SOLVED: To provide an improved optical recording medium improving recording and/or erasure efficiency when a short wavelength or low power excitation source is used. SOLUTION: In the optical recording medium including a phase change material which can be reversibly transformed between a first detectable state and a second detectable state by supply of energy, a value of an optical characteristic in the first detectable state and a value of the optical characteristic in the second detectable state are different by at least nearly 10% at the wavelength shorter than 430 nm. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种改进的光记录介质，当使用短波长或低功率激发源时，提高记录和/或擦除效率。解决方案：在包括可通过提供能量在第一可检测状态和第二可检测状态之间可逆地转换的相变材料的光学记录介质中，第一可检测状态下的光学特性的值和第二可检测状态下的光学特性在短于430nm的波长处至少接近10％。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007522676A Security with a phase transition device 审中-公开
公开(公告)号：JP2007522676A
公开(公告)日：2007-08-09
申请号：JP2006553183
申请日：2005-02-08
申请人：エナージーコンバーションデバイセスインコーポレイテッドEnergy Conversion Devices, Inc.
发明人：スタンフォードアール．オブシンスキー、 , モレルエイチ．コーヘン、
IPC分类号： H01L21/822 , G11C7/24 , G11C11/00 , G11C13/00 , G11C16/02 , G11C16/22 , H01L27/04 , H01L27/24 , H03K19/003
CPC分类号： G11C7/24 , G11C13/0004 , G11C13/003 , G11C13/0059 , G11C2213/75 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144
摘要：データ記憶及び演算素子の内容を保護する電子デバイスである。デバイスは並列配列で接続された機密保護素子と相転移素子を含む。機密保護素子は、従来型のトランジスタ又は３端子相転移素子のような３端子素子であり、オン状態とオフ状態を有し、その状態の間では抵抗値の点で差異があり、並列結合に供給される電流の流れを制御することにより相転移素子への電子アクセスを調節する。オン状態では、機密保護素子の抵抗値は相転移デバイスの抵抗値より低いので、相転移素子の抵抗値の判定を阻止し、禁止し、又は、混乱させる。この安全モードでは、相転移素子の内容は保護される。オフ状態では、機密保護素子の抵抗値は相転移材料の抵抗値より高いので、並列結合の抵抗値は相転移素子の抵抗値に接近する。この読み取りモードでは、相転移素子の抵抗値及び情報内容が判読される。相転移素子は相転移材料を含み、好ましくは、カルコゲニドをベースとした素子である。相転移素子は、好ましい実施形態として、記憶又は演算処理機能を実行し、レジスタ及び重み付けデバイスを含む。
【選択図】図３

4. 发明专利

JP2004504699A Nickel metal hydride batteries, electrochemical hydrogen storage alloy and its manufacturing method for a fuel cell 审中-公开
公开(公告)号：JP2004504699A
公开(公告)日：2004-02-12
申请号：JP2002513033
申请日：2001-07-17
申请人：エナージーコンバーションデバイセスインコーポレイテッドEnergy Conversion Devices, Inc.
发明人：アイゼン、　ウィリアム　ビー． , チャオ、　ベンジャミン , ティン、　ジェーソン , ハベル、　ウルリケ , ペレッティ、　マイケル　ダブリュー． , ホアン、　バオクアン , ヤング、　ローザ
IPC分类号： B22F9/08 , C01B3/00 , C22C1/00 , C22C1/02 , C22C1/04 , C22C16/00 , C22C19/00 , C22C30/00 , H01M4/36 , H01M4/38 , H01M4/86
CPC分类号： H01M4/364 , B22F2009/086 , B22F2998/00 , C01B3/0057 , C01B3/0078 , C22C1/02 , C22C1/0491 , C22C16/00 , C22C30/00 , H01M4/383 , H01M8/04216 , Y02E60/327 , Y02P70/56 , Y10T29/49108 , B22F9/082
摘要：本発明の実施は、少なくとも、工程が、（ａ）ニッケル及び少なくとも一つの他の遷移金属元素から成る溶融混合物を形成する工程、それらの組み合わせはＴｉＮｉ−型の合金を形成し、固体状態ではＴｉＮｉ−型合金に溶解しない合金を形成する一つ以上の元素を約０．１原子％から約１０原子％まで前記溶融混合物中に含有する、並びに（ｂ）前記溶融混合物を冷却し、少なくとも一秒当り１０
３ ℃の冷却速度で前記溶融混合物を急速凝固させることにより固体合金系材料を形成する工程、から成ることを特徴とする水素貯蔵材料の製造方法を提供する。

5. 发明专利

JP2004003033A Plasma enhanced chemical vapor deposition method 有权
公开(公告)号：JP2004003033A
公开(公告)日：2004-01-08
申请号：JP2003185572
申请日：2003-06-27
申请人： Energy Conversion Devices Inc , エナージー・コンバーション・デバイセス・インコーポレーテッド
发明人： IZU MASATSUGU , DOTTER BUDDIE R II , OVSHINSKY STANFORD R , HASEGAWA WATARU
IPC分类号： C23C16/42 , B65D65/42 , C23C16/02 , C23C16/40 , C23C16/50 , C23C16/511 , C23C16/54 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32211 , B65D65/42 , C23C16/0209 , C23C16/0245 , C23C16/401 , C23C16/402 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3277
摘要： PROBLEM TO BE SOLVED: To enable simultaneous vapor deposition for many times on a low temperature substrate material and vapor deposition of soft covering having impermeability to oxygen and water vapor of a thin film on a low temperature web by substantially eliminating the covering of an applicator separation means by a vapor deposition material and also passing the same through the inside of a system for one time. SOLUTION: In the plasma enhanced chemical vapor deposition method, oxygen and water vapor barrier covering is vapor-deposited on a temperature sensitivity substrate from a precursor gaseous mixture at least comprising a silicon-containing gas and an oxygen-containing gas by plasma enhanced chemical vapor deposition. The method is characterized by the improved process of a stage wherein, prior to a microwave vapor deposition stage, the temperature sensitivity substrate is subjected to plasma pretreatment; and a stage wherein an oxygen-containing gas with a sufficient flow rate is introduced into the precursor gaseous mixture, and the formation of a silicon-hydrogen bond in the vapor deposition covering is removed. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2941860B2 DEVICE FOR GRINDING HYDROGEN STORAGE SUBSTANCE WHICH FORMS METAL HYDRIDE 失效
公开(公告)号：JP2941860B2
公开(公告)日：1999-08-30
申请号：JP24783889
申请日：1989-09-22
申请人： ENERGY CONVERSION DEVICES INC
发明人： MAIKERU EI FUECHIENKO , TOOMASU KAATSU , SUTEIIBUN PII SAMUNAA , JIYOOJIFU RAROTSUKA
IPC分类号： B22F9/02 , B22F9/04 , C01B3/00 , H01M4/38

7. 发明专利

JPH0856007A OPTICAL FILTER AND WINDSHIELD GLASS THAT GENERATE ELECTRIC POWER 失效
公开(公告)号：JPH0856007A
公开(公告)日：1996-02-27
申请号：JP18745795
申请日：1995-07-24
申请人： ENERGY CONVERSION DEVICES INC , CANON KK
发明人： SUTANFUOODO AARU OBUSHINSUKII
IPC分类号： G02B5/20 , G02B5/28 , G03B11/00 , H01L31/0224 , H01L31/04 , H01L31/048 , H01L31/052 , H01L31/076
摘要： PROBLEM TO BE SOLVED: To filter the light of specified wavelength and to generate power at the same time, by providing a means, which has a transparent conductive layer provided on a transparent substrate, optical electromotive force layer provided on the transparent conductive layer, and transparent conductive layer provided on the optical electromotive force, for generating heat by supplying a current from the outside between the transparent conductive layers. SOLUTION: A filter 30 is composed of a transparent substrate 32, transparent conductive electrode 34 on the substrate 32, main body 36 of optical electromotive force material electrically connected with this electrode 34, and transparent electrode 38 electrically connected with this main body 36. Then, the main body 36 is composed of the array of p-i-n or n-i-p type optical electromotive force cells, respective optical electromotive force cells 1a, 1b and 1c are composed of amorphous or fine crystal optical electromotive force bodies containing Si alloy and further, the respective main bodies are composed of p-type conduction areas 3a, 3b and 3c, true conduction areas 4a, 4b and 4c, and n-type conduction areas 5a, 5b and 5c. Thus, light filtering, power generation and electrification heating are enabled.

8. 发明专利

JPH0642460B2 失效
公开(公告)号：JPH0642460B2
公开(公告)日：1994-06-01
申请号：JP13883685
申请日：1985-06-25
申请人： ENERGY CONVERSION DEVICES INC
发明人： SUTANFUOODO AARU OBUSHINSUKII
IPC分类号： C23C16/54 , C23C16/22 , C23C16/452 , H01L21/205 , H01L31/04

9. 发明专利

JPH03294405A CONTINUOUS PRODUCTION OF NEGATIVE ELECTRODE CONSISTING OF FINELY PULVERIZED HYDROGEN OCCLUDED ALLOY MATERIAL 失效
公开(公告)号：JPH03294405A
公开(公告)日：1991-12-25
申请号：JP9614090
申请日：1990-04-11
申请人： ENERGY CONVERSION DEVICES INC
发明人： MAARU URUFU , MAAKU EE NASU , MAIKERU EE FUECHIENKO , ANDOREA ERU RIJIYOI , SUTEIIBUN PII SAMUNAA , JIYOOJIFU RAROTSUKA , TOOMASU KAATSU
IPC分类号： B22F9/04 , B22F3/11 , B22F3/18 , B22F5/00 , B22F7/04 , C22C19/00 , H01M4/26 , H01M4/38
摘要： PURPOSE: To develop a hydrogen occlusion alloy negative electrode for a rechargeable secondary battery by pulverizing a metal hydride electrochemical hydrogen occlusion alloy of a specific composition in an inert gas, classifying and collecting fine powders of specific grain size and after embedding them onto a wire mesh screen, sintering it in a non-oxidizing atmosphere. CONSTITUTION: Ni(OH)2 is used by making a rechargeable secondary battery as a positive electrode, a hydrogen occlusion alloy having a composition expressed by formula 1 is used as a negative electrode and the negative electrode is manufactured using an alkaline electrolyte. The hydrogen occlusion alloy which is a material for the negative electrode melts a raw material in an inert gas atmosphere to manufacture an alloy of 45-60 Rockwell hardness and after the cast ingot is pulverized in an inert gas atmosphere such as Ar, is classified and the fine powders of

10. 发明专利

JPH02216819A SEPARATION VALVE 失效
公开(公告)号：JPH02216819A
公开(公告)日：1990-08-29
申请号：JP8669989
申请日：1989-04-05
申请人： ENERGY CONVERSION DEVICES INC
发明人： DEBITSUTO EE GATSUTASO , MASATSUGU IZU
IPC分类号： H01L21/302 , C23C14/56 , C23C16/54 , F16J15/16 , H01L21/205 , H01L21/3065 , H01L21/31 , H01L31/04
摘要： PURPOSE: To manufacture a high-performance semiconductor device in which layers having different chemical compositions are homogeneously formed and joined with each other in excellent states by changing the course of substrates continuously passed through a plurality of chambers and the arrangement of the chambers in accordance with the alteration of the course. CONSTITUTION: A supply reel 12 and take-up reel 16 constitute a drive means and intermediate idler reels 20, 22, 24, and 26 constitute a guide means. When such a variable as the impurity, the other component of a reactive gas, the arranging order of chambers between a supply section 14 and take-up section 18 is changed, the arrangement of layers in the cross section of a semiconductor also changes accordingly. In such a continuous vapor-deposition method that an intrinsic layer (I-type layer) vapor-deposition chamber 30 is considerably longer than a P- or N-type layer vapor-deposition chamber 28 or 32, a film substrate 10 advances to the take-up reel 16 from the supply reel 12 at a substantially constant speed. Since an N-type layer, an intrinsic layer, and a P-type are continuously vapordeposited on various parts of the advancing film substrate 10, the thickness of the layer which is the function of the time spend in an arbitrary chamber decides the relative length of the chamber.

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