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81. 发明专利

JP2003031679A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003031679A
公开(公告)日：2003-01-31
申请号：JP2001214394
申请日：2001-07-13
申请人： Umc Japan , ユー・エム・シー・ジャパン株式会社
发明人： TOMIOKA YUGO
IPC分类号： H01L21/76 , H01L21/761 , H01L21/762 , H01L21/8234 , H01L21/8238 , H01L27/08 , H01L27/092
CPC分类号： H01L21/823481 , H01L21/76237 , H01L21/823493
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming an optimized well for a fine MOS transistor and a well formed deeply in relatively low concentration for a high breakdown voltage MOS transistor without increasing the number of steps.
SOLUTION: The method for manufacturing the semiconductor device comprises the steps of well ion implanting for a high breakdown voltage MOS transistor before an STI is formed, then heat-treating to recover a crystal defect after filling an insulating film in a trench groove at the time of forming the STI, diffusing a well 108 for the high breakdown voltage MOS transistor, and thereafter forming the well 111 for the fine MOS transistor. Thus, the heat treatment for recovering the crystal defect indispensable to form the STI can be used for diffusing the well for the high breakdown voltage MOS transistor, and the well having the relatively low concentration and being deep can be formed without increasing the number of steps.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于制造半导体器件的方法，该半导体器件能够在不增加步骤数的情况下，形成用于高耐压MOS晶体管的精细MOS晶体管和以较低浓度深度形成的阱的优化阱。解决方案：制造半导体器件的方法包括以下步骤：在形成STI之前对高击穿电压MOS晶体管进行良好的离子注入，然后在此时在沟槽中填充绝缘膜之后对其进行热处理以恢复晶体缺陷形成STI，扩散用于高击穿电压MOS晶体管的阱108，然后形成用于精细MOS晶体管的阱111。因此，用于回收形成STI所必需的晶体缺陷的热处理可以用于扩散用于高耐压MOS晶体管的阱，并且可以形成具有相对低的浓度和深度的阱，而不增加步骤数。

82. 发明专利

JP2002359310A SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD 失效
公开(公告)号：JP2002359310A
公开(公告)日：2002-12-13
申请号：JP2001163204
申请日：2001-05-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIMAZAKI TOYOYUKI , OSAWA KATSUICHI , CHATO TETSUO , SHIMIZU YUZO
IPC分类号： H01L27/14 , H01L21/02 , H01L21/265 , H01L21/76 , H01L21/761 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L27/12 , H01L29/786 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, and its fabricating method, in which a signal processing transistor can be formed without being influenced by the forming conditions of a PIN diode for photoelectric conversion and the characteristics of the transistor can be adjusted easily. SOLUTION: The semiconductor device comprises a first conductivity type semiconductor substrate 7, an intrinsic semiconductor layer 8, a first semiconductor layer 9 adjusted to second conductivity type, a first impurity layer 11 formed in the first semiconductor layer with first conductivity type, bipolar transistors 3 and 4 formed in the first semiconductor layer, and MIS type transistors 5 and 6. A diode is formed of a multilayer structure of the semiconductor substrate, the intrinsic semiconductor layer and the first semiconductor layer. The semiconductor device further comprises a first insulator layer 13 formed beneath the bipolar transistor at least partially, and a second insulation film layer 14 formed beneath the MIS type transistor at least partally.

83. 发明专利

JP3348518B2 失效
公开(公告)号：JP3348518B2
公开(公告)日：2002-11-20
申请号：JP13659194
申请日：1994-05-25
IPC分类号： H01L21/761 , H01L21/301 , H01L21/3063

84. 发明专利

JP2002534811A 失效
公开(公告)号：JP2002534811A
公开(公告)日：2002-10-15
申请号：JP2000592886
申请日：1999-01-07
IPC分类号： H01L21/76 , H01L21/331 , H01L21/761 , H01L21/763 , H01L27/08 , H01L27/22 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78

85. 发明专利

JP2002158291A LOW VOLTAGE TRANSISTOR WITH HIGH BREAKDOWN VOLTAGE TO SUBSTRATE 审中-公开
公开(公告)号：JP2002158291A
公开(公告)日：2002-05-31
申请号：JP2001272983
申请日：2001-09-10
申请人： TEXAS INSTRUMENTS INC
发明人： CARPENTER JR JOHN H , DEVORE JOSEPH A , TANAKA TORU , TEGGATZ ROSS E
IPC分类号： H01L21/761 , H01L21/8234 , H01L27/088 , H01L29/10 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a high voltage transistor whose breakdown voltage on a body substrate is high wherein a low voltage transistor can be sued for a high-voltage application, high gain is expected with accurate matching by the transistor, and only diffusion of an existing well is required. SOLUTION: High breakdown voltage transistors (30 and 30') are formed in a well arrangement. In this arrangement, at least a part of shallow and much doped well (44) is provided in a deep and less doped well (50), with both wells formed in an epitaxial layer (43) of a substrate (42). The deep well (50) is used to form a high voltage transistor, by itself, as well while the shallow well (44) is used to form a low voltage high-performance transistor by itself. With this configuration, a high-performance transistor of accurate matching can be used for a high bias voltage application, with no fear of breakage at the junction of body substrate (in short, 'back gate-substrate').

86. 发明专利

JP2002076289A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002076289A
公开(公告)日：2002-03-15
申请号：JP2000252655
申请日：2000-08-23
申请人： NEC MICROSYSTEMS LTD
发明人： HABASAKI TADAYUKI
IPC分类号： H01L27/04 , H01L21/761 , H01L21/822 , H01L27/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for making noises difficult to propagate or improving a latch-up resistance. SOLUTION: One conductivity-type guard ring 4 and one conductivity-type well region 5 in which a power source voltage is applied are connected in a semiconductor substrate, and the well region 5 is extended in the lateral direction and is formed in the semiconductor substrate 7.

87. 发明专利

JP2002057316A SOLID-STATE IMAGE SENSING DEVICE AND ITS DRIVING METHOD 失效
公开(公告)号：JP2002057316A
公开(公告)日：2002-02-22
申请号：JP2000246411
申请日：2000-08-15
申请人： INNOTECH CORP
发明人： KAWAJIRI KAZUHIRO , MITSUIDA TAKASHI
IPC分类号： H01L27/146 , H01L21/761 , H01L31/10 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image sensing device having structure which is suitable for micronizing the unit picture element. SOLUTION: A source region 56 is arranged inside the inner periphery of a ring type gate electrode 59 of an insulated gate field-effect transistor 112 for optical signal detection adjacent to a light receiving diode 111 in the unit picture element 101. A drain region 57a is arranged outside the outer periphery of a gate electrode 59. A high concentration buried layer which stores light generating charges is arranged in a well region under a channel region in the vicinity of the source region. The unit picture element 101 is surrounded by an element isolation region 53 where a series of diffusion isolation region having the same conductivity as the drain region 57a is formed.

88. 发明专利

JP2002057218A INTEGRATED RADIO FREQUENCY CIRCUIT 失效
公开(公告)号：JP2002057218A
公开(公告)日：2002-02-22
申请号：JP2001161627
申请日：2001-05-30
申请人： PROGRAMMABLE SILICON SOLUTIONS
发明人： WONG TING-WAH
IPC分类号： H01L27/04 , H01L21/02 , H01L21/761 , H01L21/822 , H01L23/522 , H01L27/08
摘要： PROBLEM TO BE SOLVED: To form the device of a radio frequency in the die of an integrated circuit by using a CMOS manufacturing process. SOLUTION: An RF circuit is formed on triple wells (42, 44 and 46), forming two junction parts (66b and 66c) which are reverse biased. Capacitance (67) across the junction parts is reduced by adjusting the bias added to the junction parts (66b and 66c). Capacitive coupling to the substrate from the RF circuit is reduced. The self-resonance frequency of an inductor (62) is improve, and the coupling of unwanted signals and noise from the underlying substrata (42) to an active circuit element and a passive element, such as a capacitor and the inductor, can be reduced.

89. 发明专利

JP2002043557A SEMICONDUCTOR DEVICE COMPRISING SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002043557A
公开(公告)日：2002-02-08
申请号：JP2000220269
申请日：2000-07-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA ATSUSHI
IPC分类号： H01L21/322 , H01L21/761 , H01L27/146 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a solid-state imaging element, together with its manufacturing method, where a pixel characteristics is improved by suppressing to get a hot carrier and a transition metal into a pixel region from a peripheral circuit region. SOLUTION: A p-type well region 2a where a plurality of unit cells comprising a photodiode PD are provided is separated form a p-type well region 2b where a peripheral circuit element is provided.

90. 发明专利

JP3252569B2 失效
公开(公告)号：JP3252569B2
公开(公告)日：2002-02-04
申请号：JP27941093
申请日：1993-11-09
IPC分类号： H01L21/762 , H01L21/76 , H01L21/761 , H01L27/088 , H01L27/12

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