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81. 发明专利

JPS57185174A THIN FILM THERMAL HEAD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS57185174A
公开(公告)日：1982-11-15
申请号：JP7045381
申请日：1981-05-11
申请人： NIPPON ELECTRIC CO
发明人： NUNOMURA KEIJI
IPC分类号： H01C7/00 , B41J2/335 , H01C17/12 , H01L49/02
摘要： PURPOSE:To manufacture a thin film thermal head excellent in wear resistance, thermal shock resistance, oxygen shielding property, and adhesion by providing a specific surface protective layer on an insulation base plate having a heating resistor and a lead electrode. CONSTITUTION:On the surface of an insulation base plate 1, a patterned heating resistor 2 and a patterned lead electrode 3 are formed, and on them, the first SiO2 protective film 4 is formed by using a sputtering gas containing O2 and an Si target. Then, the sputtering gas is continuously replaced with Ar gas in such a way as to gradually reduce the concentration of O2 to form a buffer layer having an O2 concentration gradient, and then the second Si protective film 5 is formed. Then, the sputtering gas is continuously replaced with Ar gas containing C2H4 to form a buffer layer having a C concentration gradient, and then the third SiC protective film 6 is formed.

82. 发明专利

JPS57169206A METHOD OF PRODUCING RESISTANCE ELEMENT FOR RESISTANCE THERMOMETER 失效
公开(公告)号：JPS57169206A
公开(公告)日：1982-10-18
申请号：JP4807182
申请日：1982-03-24
申请人： ROSEMOUNT ENG CO LTD
发明人： JIEEMUSU SUCHIYUWAATO JIYONSUT , RESURII HOORANDO , KURISUTOFUAA AARU RAITO
IPC分类号： H01C17/12 , G01K7/18

83. 发明专利

JPS5769704A Thin film resistance element and method of produicng same 失效
公开(公告)号：JPS5769704A
公开(公告)日：1982-04-28
申请号：JP14620180
申请日：1980-10-17
申请人： Matsushita Electric Ind Co Ltd
发明人： NOMURA AKIYOSHI
IPC分类号： H01C7/00 , H01C7/10 , H01C17/06 , H01C17/08 , H01C17/12

84. 发明专利

JPS5631910B2 失效
公开(公告)号：JPS5631910B2
公开(公告)日：1981-07-24
申请号：JP2873474
申请日：1974-03-12
IPC分类号： H01C17/12 , C04B35/453 , C23C14/06 , C23C14/34 , H01C7/00 , H01L41/18

85. 发明专利

JPS5673407A METHOD OF MANUFACTURING CARBIDE FILM RESISTOR 失效
公开(公告)号：JPS5673407A
公开(公告)日：1981-06-18
申请号：JP15103179
申请日：1979-11-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMAMOTO KAZUSHI , NAGAI TAKESHI , KOBAYASHI IKUO
IPC分类号： H01C17/12

86. 发明专利

JPS5638807A METHOD OF MANUFACTURING TANTALUM NITRIDE FILM 失效
公开(公告)号：JPS5638807A
公开(公告)日：1981-04-14
申请号：JP11555679
申请日：1979-09-07
申请人： SUWA SEIKOSHA KK , SHIOJIRI KOGYO KK
发明人： MIYASAKA YOSHINORI , NARITA TOSHIO , INOUE KUNIHIRO , KAWACHI AKIHIKO
IPC分类号： H01C17/12

87. 发明专利

JPS55123125A CONDUCTIVE SUBSTANCE AND METHOD OF MANUFACTURING SAME 失效
公开(公告)号：JPS55123125A
公开(公告)日：1980-09-22
申请号：JP1294980
申请日：1980-02-05
申请人： ENERGY CONVERSION DEVICES INC
发明人： SUTANFUOODO AARU OBUSHINSUKII , ARAN MADAN
IPC分类号： C23C16/34 , C23C16/505 , H01B1/04 , H01C17/12 , H01L21/205 , H01L31/0224 , H01L31/04 , H01L31/07

88. 实用新型

JPS5587129U 失效
公开(公告)号：JPS5587129U
公开(公告)日：1980-06-16
申请号：JP17045678
申请日：1978-12-11
IPC分类号： H02H9/04 , H01C7/02 , H01C7/12 , H01C17/12

89. 发明专利

JPS5550221A FORMING METHOD FOR CORROSION RESISTANT TRANSPARENT CONDUCTIVE FILM 失效
公开(公告)号：JPS5550221A
公开(公告)日：1980-04-11
申请号：JP12431678
申请日：1978-10-09
申请人： TOKUDA SEISAKUSHO
发明人： KURIYAMA NOBORU
IPC分类号： C03C17/245 , C23C14/00 , C23C14/06 , C23C14/08 , G02F1/1333 , G02F1/1343 , G09F9/30 , H01B13/00 , H01C17/12
摘要： PURPOSE:To obtain the good corrosion resistant transparent conductive film of low resistance value by sputtering the material comprising Ta2O5 at 1-10wt% to TiO2 in the atmosphere added with O2 so as to have a partial pressure of 0.1-10% in Ar gas. CONSTITUTION:The material comprising adding Ta2O5 at 1-10wt% (about 6wt% to obtain the lowest resistance value) to TiO2 is used as a target material. This material is sputtered in an atmosphere comprising adding O2 to Ar gas so as to have a partial pressure of 1 to 0.1-10% (about 4% in order to obtain the minimum resistance value), whereby the corrosion-resistant transparent conductive film is obtained. In this way, the high resistance value, poor reproducibility and difficulty in practiable use in the case of TiO2 alone are solved by addition of Ta2O5 and the conductive film of superior corrosion resistance and heat resistance used for liquid crystal display device, etc. is obtained.

90. 发明专利

JPS5421538B1 失效
公开(公告)号：JPS5421538B1
公开(公告)日：1979-07-31
申请号：JP5059668
申请日：1968-07-19
IPC分类号： H01C17/08 , H01C7/00 , H01C17/12 , H01C17/28 , H01L49/02 , H05K3/30
摘要： 1,238,504. Resistors. L.C.C.-C.I.C.E. COMPAGNIE EUROPEENNE DE COMPOSANTS ELECTRONIQUES. 18 July, 1968 [19 July, 1967], No. 34408/68. Heading H1S. [Also in Division C7] A method of making tantalum nitride film resistors in the shape of a predetermined pattern α including terminals # on an insulating substrate, e.g. of glass, ceramic or enamelled aluminium, comprises the following steps- (i) Depositing a layer of metal, e.g. by evaporation of copper, on the substrate; (ii) Removing the metal in the shape of the desired pattern, e.g. by using photo-resist techniques; (iii) Covering with a tantalum nitride layer, e.g. by cathodic sputtering to form a compact layer on the exposed substrate and a porous layer on the metal surface; (iv) Finally removing said metal and its porous tantalum nitride covering e.g. by etching. The substrate is made very smooth and chemically reduced or etched by acids to improve nucleation and obtain the necessary compactness of the tantalum nitride deposit on it. The metal surface is activated or oxidized to obtain the opposite effect. Between stages (iii) and (iv) gilded terminals 6 may be produced by coating with non-polymerizable varnish between the lines 5 and evaporating the solvent thus forming a plastics film having superficial cracking. A layer of gold preferably preceded by a layer of chrome or chrome alloy is deposited on the substrate, and said plastics film is removed, leaving gilded zones 6 and 7 of which 7 is removed along with the metal in stage (iv).

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