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81. 发明专利

JP2010040838A Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2010040838A
公开(公告)日：2010-02-18
申请号：JP2008203039
申请日：2008-08-06
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/025 , H01L33/32 , H01S5/309 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device capable of improving luminous efficiency in a wide injection current range. SOLUTION: This light emitting device includes: a first layer formed of a first conductivity type semiconductor; a second layer formed of a second conductivity type semiconductor; and an active layer formed between the first layer and the second layer and including a multiquantum well, wherein first conductivity type impurity concentration in respective barrier layer in the multiquantum well is a nearly flat distribution or increases toward the second layer, the average value of impurity concentration of a barrier layer on the second layer side is not smaller than that of a barrier layer on the first layer side when viewed from the respective well layers of the multiquantum well, and the average value of impurity concentration of a barrier layer closest to the second layer is higher than that of a barrier layer closest to the first layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够在宽的注入电流范围内提高发光效率的发光器件。解决方案：该发光器件包括：由第一导电型半导体形成的第一层; 由第二导电型半导体形成的第二层; 以及形成在第一层和第二层之间并且包括多量子阱的有源层，其中多量子阱中的各阻挡层中的第一导电类型杂质浓度对于第二层几乎平坦分布或增加，杂质的平均值从多量阱的各个阱层观察时，第二层侧的阻挡层的浓度不小于第一层侧的阻挡层的浓度，最靠近第二层侧的阻挡层的杂质浓度的平均值第二层比最靠近第一层的阻挡层高。版权所有（C）2010，JPO＆INPIT

82. 发明专利

JP2009152501A Resin composition for underfill, printed circuit board, and electronic equipment 有权
标题翻译：印刷电路板和电子设备的树脂组合物
公开(公告)号：JP2009152501A
公开(公告)日：2009-07-09
申请号：JP2007331089
申请日：2007-12-21
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , KARASHIMA MASAYUKI
IPC分类号： H01L23/29 , C08K3/00 , C08L63/00 , H01L23/31
CPC分类号： H01L2224/29499 , H01L2224/73204
摘要： PROBLEM TO BE SOLVED: To obtain an underfill capable of sufficiently relieving stress generated at a ball joint portion owing to vibrations, a shock, and temperature variation. SOLUTION: A resin composition for underfill includes a liquid epoxy resin, a nonmagnetic filler, and a magnetic filler. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了获得能够充分减轻由于振动，冲击和温度变化在球接头部分产生的应力的底部填充。解决方案：用于底部填充剂的树脂组合物包括液体环氧树脂，非磁性填料和磁性填料。版权所有（C）2009，JPO＆INPIT

83. 发明专利

JP2009021671A Cellular phone 审中-公开
标题翻译：手机
公开(公告)号：JP2009021671A
公开(公告)日：2009-01-29
申请号：JP2007180908
申请日：2007-07-10
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H04M1/00 , H04W56/00 , H04W88/02
CPC分类号： H04M1/72522 , G01S1/68 , H04W52/0261 , Y02D70/00 , Y02D70/164
摘要： PROBLEM TO BE SOLVED: To provide a cellular phone enabling a user to instantly reset a correct present time irrespective of ON/OFF state of a power supply when a main battery is connected or the main battery is charged even if the main battery is detached or the power supply is interrupted because of low voltage. SOLUTION: The cellular phone attachably/detachably equipped with a main battery 12a used to perform a main operation of the cellular phone includes a time counting means 19 for counting the present time by using power supplied by the main battery 12a; an acquiring means 19a for acquiring the present time again from a base station on the basis of the fact that the main battery 12a is temporarily detached and reconnected; and a setting means for setting the acquired present time as a present time counted by the time counting means 19. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种便携式电话，使得用户即使主电池被连接或者主电池被充电，即使主电池被充电，无论电源的接通/断开状态如何，都能立即重置正确的当前时间由于电压不足而导致电源中断。＆lt; P＆gt;解决方案：用于执行蜂窝电话主要操作的主电池12a可附接/可拆卸地配备的手机包括：计时装置19，用于通过使用由主电池12a提供的电力对当前时间进行计数; 根据主电池12a临时拆卸重新连接的事实，从基站再次获取当前时间的取得单元19a; 以及设置装置，用于将获取的当前时间设置为由时间计数装置19计数的当前时间。版权所有：（C）2009，JPO＆INPIT

84. 发明专利

JP2008164383A Mass spectrometer 审中-公开
标题翻译：质谱仪
公开(公告)号：JP2008164383A
公开(公告)日：2008-07-17
申请号：JP2006353036
申请日：2006-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , YAMAOKA KAORU , OGAWA KANAKO
IPC分类号： G01N27/62 , G01N33/00
CPC分类号： H01J49/145 , H01J49/04
摘要： PROBLEM TO BE SOLVED: To rapidly and more accurately detect a bromine-based fire retardant contained in a resin part, using a simple method.
SOLUTION: A small housing part is provided on the lower part of the sample container of an ion attachment mass spectrometer that houses an analyzing reference material and an analysis sample is placed on a small housing part to make the detection gas from the analysis standard substance into contact with the analysis sample, and then subjecting the analysis sample to mass analysis.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：使用简单的方法快速且更准确地检测树脂部件中所含的溴系阻燃剂。解决方案：在容纳分析参考材料的离子附着质谱仪的样品容器的下部提供小的壳体部分，并且将分析样品放置在小的壳体部分上以使得来自分析的检测气体标准物质与分析样品接触，然后对分析样品进行质量分析。版权所有（C）2008，JPO＆INPIT

85. 发明专利

JP2008078311A Nitride semiconductor laser device 审中-公开
标题翻译：氮化物半导体激光器件
公开(公告)号：JP2008078311A
公开(公告)日：2008-04-03
申请号：JP2006254598
申请日：2006-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/3072
摘要： PROBLEM TO BE SOLVED: To suppress the reduction of a luminous efficiency or the increase of an operational voltage by suppressing carrier overflow, reducing the operational voltage and a threshold current or suppressing the introduction of a defect or a strain in a crystal interface in an active layer of a multiple quantum well structure in a manufacturing process in a semiconductor laser device having the active layer of the multiple quantum well structure.
SOLUTION: In a nitride semiconductor laser device, at least a first cladding layer of a first conduction type, an active layer, an overflow preventing layer of a second conduction type, and a second cladding layer of the second conduction type are formed on a crystal substrate; the active layer is made of a double quantum well layer having 2 wells, each having a width of 2 to 5 nm. The double quantum well layer includes a barrier layer of 3 layers having a well layer therebetween, the barrier layer being positioned outside the double quantum well layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过抑制载波溢出来抑制发光效率的降低或工作电压的增加，降低工作电压和阈值电流或抑制晶体界面中的缺陷或应变的引入在具有多重量子阱结构的有源层的半导体激光器件的制造工艺中，在多量子阱结构的有源层中。解决方案：在氮化物半导体激光器件中，形成至少第一导电类型的第一包层，有源层，第二导电类型的溢出防止层和第二导电类型的第二包覆层在晶体基板上; 有源层由具有2个阱的双量子阱层制成，每个具有2至5nm的宽度。双量子阱层包括其间具有阱层的3层的阻挡层，阻挡层位于双量子阱层的外部。版权所有（C）2008，JPO＆INPIT

86. 发明专利

JP2008047688A Nitride-based semiconductor laser device 审中-公开
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：JP2008047688A
公开(公告)日：2008-02-28
申请号：JP2006221676
申请日：2006-08-15
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , SUGAWARA HIDETO
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser device in which an operating voltage is reduced.
SOLUTION: The nitride-based semiconductor laser device comprises: an active layer composed of a nitride-based semiconductor; an overflow prevention layer that is provided on the active layer, and includes a first conductive first nitride-based semiconductor for suppressing the overflow of carrier from the active layer; an intermediate layer that is provided on and adjacent to the overflow prevention layer, and includes a first conductive second nitride-based semiconductor; and a clad layer that is provided on the intermediate layer, and includes a first conductive third nitride-based semiconductor. The first nitride-based semiconductor, the second nitride-based semiconductor, and the third nitride-based semiconductor contain the same element, with the composition ratio of the same element smaller in this order.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供其中工作电压降低的氮化物基半导体激光器件。解决方案：氮化物基半导体激光器件包括：由氮化物基半导体构成的有源层; 设置在所述有源层上的溢出防止层，并且包括用于抑制载体从所述有源层溢出的第一导电第一氮化物基半导体; 设置在溢流防止层上并与溢流防止层相邻的中间层，具有第一导电性的第二氮化物系半导体; 以及设置在中间层上的包层，并且包括第一导电第三氮化物基半导体。第一氮化物系半导体，第二氮化物系半导体以及第三氮化物系半导体含有相同的元素，相同元素的组成比依次变小。版权所有（C）2008，JPO＆INPIT

87. 发明专利

JP2007206885A Computer system and system starting method 审中-公开
标题翻译：计算机系统和系统启动方法
公开(公告)号：JP2007206885A
公开(公告)日：2007-08-16
申请号：JP2006023614
申请日：2006-01-31
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： G06F9/445
CPC分类号： G06F15/177 , G06F9/4405
摘要： PROBLEM TO BE SOLVED: To easily provide various means for starting a main system in a computer system including a main system and a sub-system which are respectively equipped with a CPU.
SOLUTION: A sub-CPU 21 starts the peripheral devices (12B to 12D) of a main CPU 2 (104), and establishes a path to access a memory 11B in a main system 1 (105), and reads the boot code of a main CPU (10) from a portable memory 24 mounted on the computer system, and moves it through an established path to the memory of the main system 1 (106), and permits the execution of the boot code by the main CPU (10).
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了容易地提供在包括分别配备有CPU的主系统和子系统的计算机系统中启动主系统的各种装置。解决方案：子CPU 21启动主CPU2（104）的外围设备（12B至12D），并建立访问主系统1（105）中的存储器11B的路径，并读取引导来自安装在计算机系统上的便携式存储器24的主CPU（10）的代码，并且通过建立的路径将其移动到主系统1（106）的存储器，并且允许主CPU执行引导代码（10）。版权所有（C）2007，JPO＆INPIT

88. 发明专利

JP2007201223A Multiple wavelength semiconductor laser device 有权
标题翻译：多波长半导体激光器件
公开(公告)号：JP2007201223A
公开(公告)日：2007-08-09
申请号：JP2006018647
申请日：2006-01-27
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01S5/022
CPC分类号： H01S5/4043 , G11B7/1275 , G11B2007/0006 , H01S5/02212 , H01S5/0224 , H01S5/02252 , H01S5/02469 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a multiple wavelength semiconductor laser device which emits laser light effective enough for writing on a recording medium at respective wavelengths.
SOLUTION: The multiple wavelength semiconductor laser device includes a first semiconductor laser element 12 which is formed on a first board 14, and emits light of a first wavelength; and a second semiconductor laser element 13 which is formed on a second board 17, and emits light of a second wavelength different from the first wavelength. The first semiconductor laser element 12 is placed with its face up on a support board 11, and the second semiconductor laser element 13 is placed with its face down on the support board 11. The first and second semiconductor laser elements 12 and 13 are so arranged as to emit laser beams in the same direction.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种发射足以在各波长的记录介质上写入的激光的多波长半导体激光装置。解决方案：多波长半导体激光器件包括形成在第一板14上并发射第一波长的光的第一半导体激光元件12; 以及第二半导体激光元件13，其形成在第二基板17上，并且发射与第一波长不同的第二波长的光。将第一半导体激光元件12的面朝上放置在支撑板11上，并且将第二半导体激光元件13的面向下放置在支撑板11上。第一和第二半导体激光元件12和13被布置成以相同的方向发射激光束。版权所有（C）2007，JPO＆INPIT

89. 发明专利

JP2007103791A Compound semiconductor element and manufacturing method therefor 有权
标题翻译：化合物半导体元件及其制造方法
公开(公告)号：JP2007103791A
公开(公告)日：2007-04-19
申请号：JP2005293840
申请日：2005-10-06
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： TANAKA AKIRA , ONOMURA MASAAKI , IIDA SEIJI , MATSUYAMA TAKAYUKI
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/1082 , H01S5/22 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor element and its manufacturing method for which the quality of a separated element side face is improved. SOLUTION: The compound semiconductor element has a lamination with a crystal substrate and a compound semiconductor multilayer, wherein at least one of the side faces of the lamination includes at least a portion of a scribe groove that extends out from that side edge of the lamination and at least a partial depth of the scribe groove seen from the principal plane of the lamination is shallow in the vicinity of the edge and deep far from the edge. COPYRIGHT: (C)2007,JPO&INPIT

90. 发明专利

JP2007005720A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2007005720A
公开(公告)日：2007-01-11
申请号：JP2005187034
申请日：2005-06-27
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01S5/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device in which operation currents are reduced and a high-order lateral mode is suppressed.
SOLUTION: The semiconductor laser device is provided with a substrate, a first conductive first clad layer formed on the substrate, an active layer formed on the first clad layer, a second conductive overflow prevention layer formed on the active layer, and a second conductive second clad layer formed on the overflow prevention layer. The second clad layer has a ridge and a non-ridge, the thickness of the non-ridge adjacent to the ridge includes an area ≤0.1 μm, and an insulating film and a light absorption film for radiation light radiated from the active layer are formed on the upper surface of the non-ridge and the side face of the ridge.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体激光器件，其中工作电流被减小并且高次横模被抑制。解决方案：半导体激光器件设置有基板，形成在基板上的第一导电第一包覆层，形成在第一覆盖层上的有源层，形成在有源层上的第二导电溢出防止层，以及形成在溢流防止层上的第二导电性第二覆盖层。第二覆盖层具有脊和非脊，与脊相邻的非脊的厚度包括≤0.1μm的面积，并且形成绝缘膜和用于从有源层辐射的辐射光的光吸收膜在非脊的上表面和脊的侧面。版权所有（C）2007，JPO＆INPIT

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