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81. 发明专利

JP2003094321A POLISHING PAD AND METHOD 审中-公开
公开(公告)号：JP2003094321A
公开(公告)日：2003-04-03
申请号：JP2001287168
申请日：2001-09-20
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU
IPC分类号： B24B57/02 , B24B37/20 , B24B37/24 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing pad and method having favorable flatness and planarity, eliminating the formation of any machining strain such as scratch scar and a microcrack, capable of providing a highly precise polishing surface with no sagging formed on the outer circumferential part, and capable of providing superior specularity, flatness, and planarity. SOLUTION: This polishing pad is so constituted that inorganic fine particles softer than a polishing workpiece are bonded together by polyvinylbutyral resin. The polishing method is so constituted that the polishing workpiece is installed on the polishing action surface of A polishing device fitted with the polishing pad and polished, while feeding polishing liquid to the polishing surface of the polishing workpiece, or, the polishing workpiece is installed on the polishing action surface of the polishing device fitted with the polishing pad, polished while feeding etching polishing liquid to the polishing surface, and sequentially polished by feeding the polishing liquid including abrasive grains to the polishing surface as substitute for the above polishing liquid.

82. 发明专利

JP2002280086A REGENERATION METHOD FOR DYE SENSITIZED SOLAR BATTERY 失效
公开(公告)号：JP2002280086A
公开(公告)日：2002-09-27
申请号：JP2001079573
申请日：2001-03-19
申请人： SUMITOMO OSAKA CEMENT CO LTD , NAT INST OF ADV IND & TECHNOL
发明人： HORIGUCHI HISAO , FUJIHASHI TAKESHI , KINOSHITA NOBORU , HARA KOJIRO , SAYAMA KAZUHIRO , ARAKAWA HIRONORI
IPC分类号： H01L31/04 , H01M14/00
摘要： PROBLEM TO BE SOLVED: To provide a regeneration method for a dye sensitized solar battery capable of prolonging service life of the dye sensitized solar battery and reducing power generation cost of the dye sensitized solar battery. SOLUTION: In this regeneration method for the dye sensitized solar battery having an oxide semiconductor electrode constituted by making an oxide semiconductor electrode material adsorb dye, a washing process S4 in which the oxide semiconductor electrode is washed by a washing liquid using at least one liquid selected from among acidic aqueous solution, basic aqueous solution, and organic solvent is carried out, and then a dye adsorption process S5 in which dye is adsorbed again in the oxide semiconductor electrode is carried out.

83. 发明专利

JP2001170858A MIRROR POLISHING METHOD FOR GRINDING SILICON WAFER 失效
公开(公告)号：JP2001170858A
公开(公告)日：2001-06-26
申请号：JP35560599
申请日：1999-12-15
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU , ANDO KAZUTO , YAMAMOTO YOSHITAKA , ISHIZUKA MASUMI , BIN ONKI , YASUNAGA NOBUO
IPC分类号： B24B37/00 , B24B37/20 , B24B37/24 , C09K3/14 , H01L21/304 , C08F299/06
摘要： PROBLEM TO BE SOLVED: To provide a mirror polishing method for grinding silicon wafer without causing machining damage such as scratching and forming a deteriorated layer by machining on a grinding silicon wafer surface, causing little surface roughness, generating little rolled edge, obtaining a high flatness easily, needing little amount of polishing, improving a throughput, having no problem in treating etching waste liquid and causing no damage to a polishing device and jigs. SOLUTION: This method is to mirror-polish a grinding silicon wafer by using a polishing slurry containing at least one type of barium carbonate particles, calcium carbonate particles and magnesium carbonate particles as grinding particles and a hard polishing pad with compressibility of 2% or less and with hardness of one of Asker hardness of 85 or more, JIS-A hardness of 85 or more or Shore D hardness of 40 or more.

84. 发明专利

JPH11140429A POLISHING MATERIAL FOR CHEMICAL AND MECHANICAL POLISHING AND POLISHING 失效
公开(公告)号：JPH11140429A
公开(公告)日：1999-05-25
申请号：JP30856497
申请日：1997-11-11
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU , YAMAMOTO YOSHITAKA , TANAKA SHINICHI
IPC分类号： B24B37/00 , C01B9/08 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To obtain the subject polishing material having excellent chemical and mechanical polishing processing properties, not giving processing damages such as the generation of scratches or the stay of particles and useful for polishing silica films on silicon wafers or the like by including fluoride abrasive grains or fluoride hydrate abrasive grains. SOLUTION: This polishing material contains one or more kinds of fluoride abrading particles or fluoride hydrate abrading particles preferably having one or more kinds of elements such as Ca, Mg and Ba and usually having particle diameters of

85. 发明专利

JPH10340629A BASE BOARD HAVING TRANSPARENT CONDUCTIVE FILM AND ITS MANUFACTURE 失效
公开(公告)号：JPH10340629A
公开(公告)日：1998-12-22
申请号：JP16352697
申请日：1997-06-06
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU , ANDO KAZUTO
IPC分类号： H01L31/04 , C23C18/18 , H01B5/14 , H05K9/00
摘要： PROBLEM TO BE SOLVED: To provide excellent transparency besides desired electric conductivity by forming a catalyst layer having a mesh structure on a base board, and forming a metallic layer on this catalyst layer. SOLUTION: A catalyst layer connected in a mesh shape is formed on a transparent base board, and a mesh-like metallic layer is formed by arranging a metallic layer only on this catalyst layer, and a base board having a transparent conductive film is formed. That is, electric conductivity is exhibited by the metallic layer which is formed on the catalyst layer and is connected in a mesh shape, and transprency is secured since the metallic layer takes a structure opening in a mesh shape. Here, the catalyst layer receives an electron from a reducing agent in an electroless plating liquid on a catalyst particle surface, and operates to reduce and deposit metal on the catalyst layer by giving its electron to a metallic ion to be deposited. Since a thickness of the metallic layer formed on the catalyst layer connected in a mesh shape is set to a thickness not less than 0.05 μm, desirably, not less than 0.1 μm, excellent electric conductivity can be imparted.

86. 发明专利

JPH10329032A GRINDING WHEEL FOR POLISHING LSI OXIDE FILM AND POLISHING METHOD THEREFOR 失效
公开(公告)号：JPH10329032A
公开(公告)日：1998-12-15
申请号：JP13969997
申请日：1997-05-29
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： YASUNAGA NOBUO , KINOSHITA NOBORU , TANAKA SHINICHI , YAMAMOTO YOSHITAKA
IPC分类号： B24D3/00 , B05D3/12 , B24D3/28 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To accomplish global flatness of an LSI oxide film by polishing it with a grinding wheel containing abrasive grains of special material having excellent polishing performance regarding the LSI oxide film grinding wheel applied for LSI global planarization and the LSI oxide film polishing method. SOLUTION: A grinding wheel containing BaCO3 powder and/or CeO2 powder of an average grain diameter of less than 1 μm but 0.01 μm or more as abrasive grains is composed and used for polishing. The abrasive grain rate of the LSI oxide film grinding wheel is preferable to be 50 to 95 volume %. It also may be used as a resinoid bond grinding wheel solidified after mixing the abrasive grains and the resinoid bond together and forming it.

87. 发明专利

JPH10312715A TRANSPARENT CONDUCTIVE FILM AND ITS MANUFACTURE 失效
公开(公告)号：JPH10312715A
公开(公告)日：1998-11-24
申请号：JP12215197
申请日：1997-05-13
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： YOSHIKAWA TOSHIHARU , KINOSHITA NOBORU , NAKABEPPU TETSUYA , KUBO YASUO
IPC分类号： C23C26/00 , H01B1/22 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To provide a thin film having high conductivity, capable of effectively exerting a leakage electromagnetic wave shielding effect, having a high total light transmission factor, generating no moire interference pattern, and usable as an electrode at a low cost by forming it with a fine mesh structure made of silver. SOLUTION: This transparent conductive film is made of a metal having low volumetric specific resistance, particularly silver, into a fine mesh structure, and it has a high light transmission factor while maintaining high conductivity. When the average opening diameter of meshes exceeds 50 μm in the transparent conductive film having the fine mesh structure, the mesh structure can be recognized via naked eyes, visibility becomes inferior, therefore the average opening diameter is set to 50 μm or below. When the average opening diameter/average line width is smaller than 7, the area of the opening portion becomes relatively narrow, the total light transmission factor of 60% or above is difficult to secure, therefore the average opening diameter/average line width is set to 7 or above.

88. 发明专利

JPH10158632A POLISHING MATERIAL AND POLISHING METHOD 失效
公开(公告)号：JPH10158632A
公开(公告)日：1998-06-16
申请号：JP32284896
申请日：1996-12-03
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： YASUNAGA NOBUO , KINOSHITA NOBORU , TANAKA SHINICHI
IPC分类号： B24B1/00 , C09K3/14 , C09K13/04 , C09K13/06 , C11D7/08 , C11D7/26 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To obtain a polishing material which is not stained by an alkali metal, has been improved in particle cleanability and polishing capability, and has a high practical usability by selecting an ultrafine BaCO3 powder having a specified average particle size as the polishing material and to provide a polishing method using the same. SOLUTION: An object to be polished is subjected to dry mirror polishing with an ultrafine BaCO3 powder having an average particle size 0.1μm or lower as the polishing material and then is cleaned with an aq. acid soln. contg. at least one acid selected from among nitric, hydrochloric, formic, and acetic acids, thus giving a mirror polished item. Thus, only a mechanochemical polishing capability is utilized. This mechanochemical polishing is effected by a mechanism that in addition to heat build-up, internal stresses such as a compression stress and a tensile stress occur in BaCO3 particles present between a polishing cloth and the object to be polished, causing the decomposition and decarboxylation of BaCO3 and the generation of highly reactive barium oxide; barium oxide thus formed reacts with silicon oxide present on the surface of a silicon wafer, etc., to form a barium silicate compd. on the surface to be polished; and the silicate compd. is removed by BaCO3 particles.

89. 发明专利

JPH0953030A CLEAR CONDUCTIVE COATING MATERIAL AND CLEAR CONDUCTIVE FILM 失效
公开(公告)号：JPH0953030A
公开(公告)日：1997-02-25
申请号：JP20634695
申请日：1995-08-11
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU , NAKABEPPU TETSUYA
IPC分类号： B32B9/00 , C03C17/10 , C09D5/24
摘要： PROBLEM TO BE SOLVED: To obtain a clear condcutive coating compsn. which gives a film having high clarity and conductivity and improved antistatic, electromagnetic shielding, and infrared-screening properties by compounding a metal colloid and fine inorg. particles, each having specified average particle size, into the compsn. SOLUTION: This coating material is prepd. by dispersing 10wt.% (based on the solid content of the compsn.) or higher silver colloid liq. obtd. by a well-known method (e.g. one obtd. by adding a silver nitrate soln. to a ferrous sulfate soln. contg. sodium citrate) and having an average particle size of 0.05μm or lower, about 4wt.% (based on the solid content of the compsn.) or higher fine inorg. particles comprising an oxide (e.g. indium oxide or tin oxide) transparent in the wavelength region of visible light and having an average particle size of 0.1μm or lower, and necessary amts. of a binder component, colorants, etc., in a vehicle of a clear coating material (e.g. a soln. based on butyl cellosolve, isopropyl alcohol, water, etc.) with a usually used dispersing machine. This film is prepd. by applying the compsn. to a clear substrate in a dry thickness of 1μm or lower followed by drying at from room temp. to 200 deg.C.

90. 发明专利

JP2002292556A SLURRY, GRINDSTONE, PAD AND ABRASIVE FLUID FOR MIRROR POLISHING OF SILICON WAFER, AND MIRROR POLISHING METHOD USING THESE MATERIALS 失效
公开(公告)号：JP2002292556A
公开(公告)日：2002-10-08
申请号：JP2001097070
申请日：2001-03-29
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU , YAMAMOTO YOSHITAKA
IPC分类号： B24B37/00 , B24B37/12 , B24B37/14 , B24B37/20 , B24B37/24 , B24D3/00 , B24D3/02 , C09K3/14 , H01L21/304 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To provide slurry, a grindstone, a pad and abrasive fluid for mirror polishing of a silicon wafer, and a polishing method for the silicon wafer using these materials, by which a mirror polishing speed is remarkably improved, a mirror finished surface is obtained for a short time and a throughput is further improved. SOLUTION: The slurry, the grindstone, the pad and the abrasive fluid for mirror polishing of the silicon wafer are constituted so that fine grains of an alkali earth metal carbonate as abrasive grains may contain a water-soluble carbonate as an abrasive accelerator. In the polishing method of the silicon wafer, the fine grains of the alkali earth metal carbonate is used as the abrasive grains, and wet polishing is carried out in the presence of water and the water- soluble carbonate.

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