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81. 发明专利

JP2000066365A PHOTOMASK PATTERN DESIGN SUPPORT APPARATUS, PHOTOMASK PATTERN DESIGN SUPPORT METHOD AND RECORDING MEDIUM RECORDING PHOTOMASK PATTERN DESIGN SUPPORT PROGRAM 失效
公开(公告)号：JP2000066365A
公开(公告)日：2000-03-03
申请号：JP23211998
申请日：1998-08-18
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI , MITSUYOKO KATSUYUKI , SHINOMORI EIJI , FUJITA MASAYA
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , G06F17/50 , H01L21/82 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a photomask pattern design support apparatus capable of rapidly executing information feedback of pattern correction, etc., by efficiently executing the light intensity simulation of an enormous amt. of mask patterns by parallel processing usign plural arithmetic processors, a method therefor and a recording medium recording a design support program. SOLUTION: The mask pattern data of the LSI circuit pattern data and mask pattern data inputted from a CAD apparatus are divided to plural pattern regions (system S1) and is converted to a simulation data system (step S2). The converted simulation data are distributed to the plural arithmetic processors (step S3). The pattern data based on the simulation results calculated by the arithmetic processors and the inputted LSI circuit pattern data described above are compared and evaluated (step S6).

82. 发明专利

JPH11184064A PHOTOMASK PATTERN DESIGN APPARATUS AND DESIGN METHOD AS WELL AS RECORD MEDIUM RECORDING PHOTOMASK PATTERN DESIGN PROGRAM 失效
公开(公告)号：JPH11184064A
公开(公告)日：1999-07-09
申请号：JP34978997
申请日：1997-12-18
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI , SHINOMORI EIJI , MITSUYOKO KATSUYUKI
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , G06F17/50 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a photomask pattern design apparatus and design method by which mask patterns subjected to optimization to improve fine processing accuracy are obtd. and a recording medium recorded with a photomask pattern design program. SOLUTION: The CAD pattern data read in a step S1 is subjected to a design rule check in a step S2 and the pattern part to be subjected to light intensity simulation is extracted. The data conversion from the CAD pattern data extracted in a step S3 to a raster type is executed and the light intensity simulation is executed in a step S4. A contour-line pattern of a prescribed value is thereafter extracted from the numerical data obtd. as a result of the light intensity simulation in a step S5 and this contour-line pattern and the CAD pattern data read in the step S1 are superposed on each other in a step S6. The design rule check is then executed and the point requiring correction is extracted. This point requiring correction is corrected in a step S7.

83. 发明专利

JPH10293393A PHOTOMASK DEFECT ANALYZER AND DEFECT ANALYZING METHOD 失效
公开(公告)号：JPH10293393A
公开(公告)日：1998-11-04
申请号：JP10369097
申请日：1997-04-21
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI
IPC分类号： G03F1/84 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a mask defect analyzer and a defect analyzing method by which a systematic defect analysis can be quickly and easily performed by accurately taking in information such as a shape, the size and the optical concentration of an actual mask defect. SOLUTION: In a defect observing unit 1, defect information on a photomask 3 is taken in a defect observing part 5, and is stored in an image information recording part 7, and this information is delivered to a defect analyzing unit 9 from an image information output part 8. After image information is properly converted into data by an image converting part 11, a photomask pattern and defect image data are synthesized by a pattern data synthesizing part 12, and a simulation is performed by a light intensity simulation part 14. An analysis can be performed with highly accurate defect information on the basis of the image information on an actual photomask defect by analyzing this, and a defect analysis can also be quickly and easily performed by using the simulation.

84. 发明专利

JPH10239826A DEVICE AND METHOD FOR DESIGNING PHOTOMASK PATTERN 失效
公开(公告)号：JPH10239826A
公开(公告)日：1998-09-11
申请号：JP4120997
申请日：1997-02-25
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI
IPC分类号： G03F1/36 , G03F1/68 , H01L21/02 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a design fulfilling the design rule of a logic circuit and to easily obtain a photomask pattern including an optical proximity effect correction pattern where fine working accuracy is improved. SOLUTION: This system is composed of the designing device possesses a pattern condition inputting part 2 used for the input of a pattern design rule which is a condition for extracting a photomask pattern part to be optimized at a usual photomask pattern, a pattern extracting part 7 extracting an optical proximity effect pre-correction pattern cell that is not suited to the pattern design rule and is corrected in terms of an optical proximity effect, a light intensity simulation part 9 repeatedly executing light intensity simulation for several times for a pre-optimizing pattern cell and a pattern optimizing part 10 optimizing the optical proximity effect pre-correction pattern cell based on plural simulation results.

85. 发明专利

JPH09297390A PHOTOMASK, EXPOSURE METHOD USING THE SAME AND FORMATION OF PHOTOMASK PATTERN 失效
公开(公告)号：JPH09297390A
公开(公告)日：1997-11-18
申请号：JP10914096
申请日：1996-04-30
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To easily form patterns of high accuracy in shapes and sizes in semiconductor devices, etc., having fine patterns by providing the opposite side of first transmissible parts arranged with light shielding part patterns in-between with second transmissible parts consisting of the patterns smaller than the patterns of the first transmissible parts and having transmissibility. SOLUTION: A photomask 1 have the rectangular patterns P (pattern sizes are, for example, width L5=0.6μm and length L6=1.0μm) consisting of translucent parts 1b on the light shielding film 1a and have fine correction patterns 1c, 1d of a square shape which partly overlap on the corner parts, consist of the translucent parts in the non-overlapping parts and consist of the light shielding parts of the non-overlapping parts. The sizes of such correction patterns 1c, 1d constitute a square shape of, for example, a width L7=0.4μm. In such a case, the correction patterns 1c are so formed as to include the vertexes p1 of the rectangular patterns p and the correction patterns 1d to include the vertex p2 of P. The correction patterns 1c, 1d do not come into contact with each other and do not overlap each other.

86. 发明专利

JPH08101491A PHOTOMASK 失效
公开(公告)号：JPH08101491A
公开(公告)日：1996-04-16
申请号：JP26162194
申请日：1994-09-30
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI , SUZUKI KAZUO
IPC分类号： G03F1/36 , G03F1/68 , G03F1/08
摘要： PURPOSE: To approximate a pattern formed on a photoresist film sufficiently to an expected rectangular pattern and to pattern the film with high precision in the photolithography process to produce a semiconductor device. CONSTITUTION: A rectangular pattern P consisting of a light-transmitting part 10b or a light-shielding part 10a is provided on at least a part of a photomask. In this case, correction patterns p1 and p2 are provided in the area adjacent to the rectangular pattern P to correct the light intensity distribution of the projected image of a rectangular pattern and to reduce the roundness of the corner of the pattern of the projected image.

87. 发明专利

JPH07128839A OPTICAL MASK AND ITS PRODUCTION 失效
公开(公告)号：JPH07128839A
公开(公告)日：1995-05-19
申请号：JP27384793
申请日：1993-11-01
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F1/08
摘要： PURPOSE:To eliminate a difference in transmittance between light transmissive parts and phase shift parts and to easily execute disposition for this purpose by correcting the intensity attenuation of the transmitted light of the light transmissive parts generated hitherto by the exposing light component inverted in phase by reflection by the side walls of the light transmissive parts so as to offset the attenuation. CONSTITUTION:This process for production of the optical mask comprises forming an etching stop layer 22, a phase shift layer 23 and a light shielding layer 24 on a transparent substrate 21 and removing resists remaining after forming the light shielding layer patterns by applying photolithography, then forming phase shift layer patterns by overlap exposing to the light shielding layer patterns by applying the photolithography. The substrate is subjected to an oxidation treatment after formation of the phase shift layer patterns.

88. 发明专利

JPH05107734A PRODUCTION OF PHASE SHIFT MASK 失效
公开(公告)号：JPH05107734A
公开(公告)日：1993-04-30
申请号：JP26633191
申请日：1991-10-15
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , FUKUSHIMA YUICHI , KONISHI TOSHIO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To produce a phase shift mask having reduced unevenness in the thickness of the pattern of the phase shifter layer, capable of making the best use of phase shift effect and ensuring satisfactory plotting in a superposed state. CONSTITUTION:An etching stopper layer 2 and a light shielding layer 3 are successively formed on a substrate 1 and the layer 3 is patterned. A phase shifter layer 5, an electric conductive layer 6 and a resist are successively formed on the resulting pattern 3, the resist 7 is drawn to form a resist pattern 7 for the phase shifter layer 5 and the layer 5 is etched to produce a phase shift mask.

89. 发明专利

JPH05107732A PHASE SHIFT MASK AND PRODUCTION THEREOF 失效
公开(公告)号：JPH05107732A
公开(公告)日：1993-04-30
申请号：JP26632991
申请日：1991-10-15
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , FUKUSHIMA YUICHI , KONISHI TOSHIO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To produce a phase shift mask having reduced uneveness in the thickness of the pattern of the phase shifter layer, capable of making the best use of phase shift effect and ensuring satisfactory plotting in a superposed state. CONSTITUTION:An etching stopper layer 2 and a light shielding layer 3 are successively formed on a substrate 1 and the layer 3 is patterned. An electric conductive layer 5, a phase shifter layer 6 and a resist 7 are successively formed on the resulting pattern 3, the resist 7 is patterned and the layer 6 is etched to produce a phase shift mask.

90. 发明专利

JPH0553290A BLANK FOR PHASE SHIFT MASK AND PHASE SHIFT MASK AS WELL AS PRODUCTION THEREOF 失效
公开(公告)号：JPH0553290A
公开(公告)日：1993-03-05
申请号：JP21107891
申请日：1991-08-22
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , FUKUSHIMA YUICHI , KONISHI TOSHIO
IPC分类号： G03F1/30 , G03F1/34 , G03F1/68 , H01L21/027
摘要： PURPOSE:To prevent the charge-up phenomenon by electron beams by providing a light shielding layer consisting of chromium, etc., on shifter patterns, applying a resist thereon and subjecting the resist to superposition plotting. CONSTITUTION:Glass, such as quartz glass or low-expansion glass, which is less strained in position, is used for a transparent supporting substrate 1. An etching stopper layer 2 is provided in order to stop the etching of the shifter layer before the substrate is etched. Further, SiO2 or org. high polymer or the like is used for the shifter layer 3. A conductive layer 4 is provided under the resist layer 5 in order to prevent the charge-up at the time of the plotting by the electron beams. The light shielding layer 7 is then provided in order to form light shielding patterns and the resist 8 for patterning of the light shielding layer 7 is applied thereon. The conductive light shielding layer 7 existing under the resist is grounded in such a case, by which the charge-up phenomenon is prevented even if the shifter layer 3 has an insulating characteristic.

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