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81. 发明专利

JPH01288828A THIN-FILM TRANSISTOR 失效
公开(公告)号：JPH01288828A
公开(公告)日：1989-11-21
申请号：JP12010288
申请日：1988-05-16
申请人： SHARP KK
发明人： TANAKA HIROHISA , KATAYAMA MIKIO , SHIMADA YASUNORI , MORIMOTO HIROSHI
IPC分类号： H01L27/12 , G02F1/133 , G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain the thin-film transistor which is less deteriorated in threshold voltage with time and has high reliability by forming a gate insulating film into two-layered structure and forming the insulating film on the thin semiconductor film side so as to have the charge injection characteristic lower than the charge injection characteristic of the insulating film on the control electrode side. CONSTITUTION:The gate insulating film having the two-layered structure consisting of an SiNx film 3 and an SiOx film 4 is constituted to cover a gate electrode 2 on a glass substrate 1 and the semiconductor layers 5, 7, 9 are formed thereon. The film 4 of the gate insulating film plays the role of preventing the injection of charge during the operation of the thin-film transistor (TFT) and the film 3 plays the role of lowering the threshold voltage of the TFT as a high dielectric constant insulating film. The film 3 is constituted to have the charge injection characteristic smaller than the charge injection characteristic of the film 4. The fluctuation in the threshold voltage with time is thereby decreased and the thin-film transistor having the high reliability is obtd.

82. 发明专利

JPH01284831A ACTIVE MATRIX SUBSTRATE 失效
公开(公告)号：JPH01284831A
公开(公告)日：1989-11-16
申请号：JP11555888
申请日：1988-05-12
申请人： SHARP KK
发明人： KONDO YOICHI , KATAYAMA MIKIO , TANAKA HIROHISA , MORIMOTO HIROSHI
IPC分类号： H01L23/522 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/31 , H01L21/768 , H01L27/12
摘要： PURPOSE:To inhibit the generation of a linear defect to the utmost by allowing a bypass line which has been connected electrically to one wiring to intersect with the other wiring in other part than intersecting part of a data line and a scanning line which have been brought to wiring so as to be orthogonal to each other. CONSTITUTION:Plural picture element electrodes 30 provided in a matrix shape on an insulating substrate 10, plural scanning lines 50 which have been brought to wiring so as to be parallel to one of the provided directions of each picture element electrode 30, and plural data lines 40 for intersecting in an insulated state with each scanning line 50 are provided in a matrix shape so that a drain electrode 21 is connected electrically to the picture element electrodes 30, respectively. In this state, each source electrode 22 is connected to the scanning line 50, and also, each gate electrode 26 is connected to the data line 40, and plural thin film transistors are formed. Also, a bypass line 51 for connecting electrically one wiring of each scanning line 50 and the data line 40 and both ends and intersecting with the other wiring is provided. In an intersecting part of this bypass line 51 and a prescribed wiring and in an intersecting part of each wiring, a laminated structure of a semiconductor film and a protective insulating film 63 is formed independently.

83. 发明专利

JPH01134344A ACTIVE MATRIX SUBSTRATE 失效
公开(公告)号：JPH01134344A
公开(公告)日：1989-05-26
申请号：JP29246887
申请日：1987-11-19
申请人： SHARP KK
发明人： KATAYAMA MIKIO , TANAKA HIROHISA , SHIMADA YASUNORI , MORIMOTO HIROSHI
IPC分类号： G09F9/30 , G02F1/133 , G02F1/136 , G02F1/1368 , H01L21/82
摘要： PURPOSE:To prevent a gate bus from breaking and decreasing in resistance by forming a gate bus line in multilayered structure of conductive thin films except at the intersection part of the gate and bus line of a thin film transistor(TR) array provided in a matrix on an insulating substrate. CONSTITUTION:A by-pass line 2 is formed in parallel to a gate bus line 1 and connected through a through hole 3 of an inter-layer insulating film to form a laminate body of thin conductor films. No by-pass part is provided to a cross part 4 where the source bus line 5 is crossed so as to decrease the number of crosses. The gate bus line 1 is a thin conductor film consisting of >=2 layers of titanium, tantalum, etc. This constitution decreases the possibility of the breaking of a gate bus and reduces the line resistance to improve the picture quality of an active matrix display due to the breaking of the gate bus line.

84. 发明专利

JPH01123217A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH01123217A
公开(公告)日：1989-05-16
申请号：JP28274887
申请日：1987-11-09
申请人： SHARP KK
发明人： KATAYAMA MIKIO , TANAKA HIROHISA , SHIMADA YASUNORI , MORIMOTO HIROSHI
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1335 , G02F1/1365 , G02F1/1368 , G09F9/35 , H01L27/12
摘要： PURPOSE:To enlarge a picture element area and to improve an image grade by forming black stripes between the picture element electrodes of an active element side substrate and on at least either of the upper or lower side of the active element. CONSTITUTION:This device is made into the structure having the black stripes between the picture element electrodes 10 of the active element side substrate 19 and on at least either of the upper or lower side of the active element. The positional accuracy of the picture element electrodes 10 and the black stripes is, therefore, determined solely by the accuracy of the film formation and patterning of the active element side substrate. The problem of the registration accuracy of the picture element electrodes 10 and the black stripes in sticking of a color stripe side substrate 20 and the active element side substrate 19 is solved. The width of the black stripes is thereby narrowed and the picture element area is correspondingly enlarged; therefore, the image grade is improved by the increased brightness.

85. 发明专利

JPS61180275A LIQUID CRYSTAL DISPLAY UNIT 失效
公开(公告)号：JPS61180275A
公开(公告)日：1986-08-12
申请号：JP2219685
申请日：1985-02-06
申请人： SHARP KK
发明人： TANAKA HIROHISA , KISHI KOHEI , YANO KOZO
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/136 , G02F1/1368 , G03F1/00 , G09F9/35 , H01L27/12

86. 发明专利

JP2000135578A LASER RADIATING DEVICE 失效
公开(公告)号：JP2000135578A
公开(公告)日：2000-05-16
申请号：JP30599998
申请日：1998-10-27
申请人： SUMITOMO HEAVY INDUSTRIES , SHARP KK
发明人： HAMADA SHIRO , NOMURA KATSUMI , TANAKA HIROHISA
IPC分类号： B23K26/00 , B23K26/066 , H01L21/268 , B23K26/06
摘要： PROBLEM TO BE SOLVED: To provide a laser radiating device for evening variation of the radiated laser light energy volume on a substrate. SOLUTION: A processing substrate 2 is held by a holding plate 14. A laser optical system radiates a laser beam 10 having a linear beam cross section of a given width on the surface of the processing substrate 2 held by the holding plate 14. A partial shielding means is arranged on the surface of the processing substrate 2 held by the holding plate 14, spaced from the surface by a given clearance. The partial shielding means shields the laser light transmitted near the both side edges along a line longitudinal direction of the beam cross section out of the laser beams 10 radiated on the surface of the processing substrate 2.

87. 发明专利

JP2552335B2 失效
公开(公告)号：JP2552335B2
公开(公告)日：1996-11-13
申请号：JP14605988
申请日：1988-06-14
申请人： SHARP KK
发明人： KATAYAMA MIKIO , TANAKA HIROHISA , OKAMOTO MASAYA , SHIMADA YASUNORI , MORIMOTO HIROSHI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/82 , H01L27/12 , H01L29/78 , H01L29/786

88. 发明专利

JPH0833556B2 失效
公开(公告)号：JPH0833556B2
公开(公告)日：1996-03-29
申请号：JP677089
申请日：1989-01-13
申请人： SHARP KK
发明人： HASHIMOTO NORIO , TAKAMATSU TOSHIAKI , TANAKA HIROHISA , KATAYAMA MIKIO , OTOKOTO HIDENORI , MORIMOTO HIROSHI
IPC分类号： G01R31/26 , G02F1/13 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1368 , H01L21/66

89. 发明专利

JPH06275645A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06275645A
公开(公告)日：1994-09-30
申请号：JP6557793
申请日：1993-03-24
申请人： SHARP KK
发明人： MITANI YASUHIRO , TANAKA HIROHISA
IPC分类号： H01L21/265 , H01L21/28 , H01L21/336 , H01L29/40 , H01L29/43 , H01L29/78 , H01L29/786 , H01L29/46 , H01L29/784
摘要： PURPOSE:To shorten the annealing process for forming silicide, by a method wherein an impurity semiconductor layer and the silicide are simultaneously formed by the self annealing at the time of implantation, by forming a metal on an amorphous semiconductor, implanting impuritity ions from above the metal layer, and forming the impurity semiconductor layer. CONSTITUTION:On a transparent insulating substrate 1, Al is deposited, and a gate electrode 2 and a gate insulating film 3 composed of SiNx are formed. An amorphous semiconductor layer composed of amorphous silicon is formed on the gate insulating film 3, and further an SiNx film is formed. Thus a channel protecting film 5 is formed on the gate electrode 2. Via the protecting film 5, a metal layer 107 is formed so as to be identical to the form of the amorphous semiconductor layer. Impurity semiconductor layers 6a, 6b are formed by implanting impurity ions 100 in the semiconductor layer via the metal layer 107. Metal silicide layers 7a, 7b are formed on the layers 6a, 6b. Thereby the annealing process for forming silicide can be shortened.

90. 发明专利

JPH06209012A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06209012A
公开(公告)日：1994-07-26
申请号：JP284193
申请日：1993-01-11
申请人： SHARP KK
发明人： MAKITA NAOKI , FUNAI TAKASHI , SHIBUYA TSUKASA , TANAKA HIROHISA
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/225 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To acquire a semiconductor device of high performance by reducing defect existing in a non-single crystal silicon semiconductor layer effectively without increasing the number of processes. CONSTITUTION:A gate insulation film 104 consisting of silicon nitride film containing hydrogen is formed on a p-Si-based semiconductor layer 103. It is thermally treated and hydrogen inside the gate insulation film 104 is diffused inside the semiconductor layer 103. Thereby, it is possible to effectively reduce defect such as dangling bond existing inside the semiconductor layer 103.

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