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81. 发明专利

JPS55162262A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55162262A
公开(公告)日：1980-12-17
申请号：JP6894979
申请日：1979-06-04
申请人： HITACHI LTD
发明人： NONAKA YOSHIO , YAMADA KOUICHIROU
IPC分类号： H01L21/306 , H01L21/331 , H01L29/06 , H01L29/73
摘要： PURPOSE:To improve the reliability of the device by the method wherein tape is pasted on the entire surface of a wafer provided with unit circuit elements arranged lengthwise and crosswise and fitted with soldered electrodes, and the element boundary is bevel etched from the other surface and filled with protective film, and this part is cut after the tape is removed. CONSTITUTION:Soldered electrodes 2 and 3 connected to n layer 4 and p layer 5 are provided on one surface of a substrate provided with circuit elements arranged lengthwise and crosswise, and soldered electrode 6 connected to n layer 7 is provided on the other surface. V-groove 10 is cut in the center of surface oxide film 9. After circuit elements are divided, resin tape 11 is pasted on the side of electrodes 2 and 3, and by bevel etching with an etching solution, the tape is reached; the surrounding part of electrode 6 assumes the form of canopy. Next, groove 13 is dried in a vacuum and covered with polyimide resin 14; and tape 11 is removed, and then sintering is operated. Next, bonding material 15 of Si resin is filled, and crack 16 is produced on the protective part of the boundary. Since protective film 14 is thin, it is not damaged by thermal distortion in the subsequent assembling, and the reliability of the resultant device is increased. Further, since it is bonded with bonding material 15, it can be conveniently handled like a wafer.

82. 发明专利

JPS5549525A EXHAUST GAS BYYPASS VALVE OPERATING MECHANISM FOR TURBO CHARGER 失效
公开(公告)号：JPS5549525A
公开(公告)日：1980-04-10
申请号：JP12156978
申请日：1978-10-04
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： F02B37/12 , F02B37/18
摘要： PURPOSE:To provide an exhaust gas by-pass valve operating mechanism which can prevent a displacing element used therein from increasing at its temperature to thereby enable the use of rubber or synthetic resin diaphragm having large displacing amount and good control accuracy as the displacing element. CONSTITUTION:Exhaust gas is introduced into the scroll chamber 9 of a turbine case 2, injected from a nozzle 3 toward a turbine impeller 4, and exhausted from an outlet to thereby rotate the impeller 4. Thus, a compressor impeller 7 is rotated through a shaft 6 to gradually increase the pressure in a pressure chamber 22 to thereby increase the pressure in the second displacing chamber 16B in a valve operating mechanism 8 via a pressure tube 19 to thus displace a displacing element 14 toward the case 2 so as to open an exhaust by-pass valve 11. The element 14 is sufficienctly cooled by the exhaust air introduced from the pressure tube 19 and exhausted from a small hole 20 provided at the second case 15B of the mechanism 8.

83. 发明专利

JPS5528739A GLASS FILM FORMING METHOD BY PHOTOSENSITIZING TREATMENT 失效
公开(公告)号：JPS5528739A
公开(公告)日：1980-02-29
申请号：JP10179578
申请日：1978-08-23
申请人： HITACHI LTD
发明人： ASHIKAWA KAZUTOSHI , NONAKA YOSHIO , YAMADA KOUICHIROU , KOBAYASHI MASAMICHI
IPC分类号： B05D5/06 , B05D7/00
摘要： PURPOSE:To make selective formation of glass films sure by improving the adhesiveness between photo glass and substrate. CONSTITUTION:After photo resist 4 is thinly coated on a substrate 1, photo resist 5 containing glass components is coated thereon and is subjected to exposure and development through a mask, whereby part of the films of the photo resist 4 and the photo resist 5 containing glass are selectively removed. Thereafter, the substrate is subjected to firing, whereby the remaining photo resists are flown off and the glass components are sintered on the substrate 1.

84. 发明专利

JPS54137972A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54137972A
公开(公告)日：1979-10-26
申请号：JP4531178
申请日：1978-04-19
申请人： HITACHI LTD
发明人： NONAKA YOSHIO , YAMADA KOUICHIROU
IPC分类号： H01L21/316 , H01L21/56
摘要： PURPOSE:To form a protective film by charging the moat part of a semiconductor surface with powder of a protective material and by baking it after increasing the combination density of the powder by a volatile liquid. CONSTITUTION:Onto the semiconductor device with moat part 6 formed by mesa- etching with the pn junction exposed, oxide film 5 is provided via resist 7 and powdery glass is scattered and deposited to the desirable amount. Next, adhesive tape 9 is adhered to the entire surface, applied uniformly with pressure, and peeled off to remove undersired powder around moat part 6. Then, isopropyl alcohol is scattered from a nozzle to increase the combination density of dried powdery glass 8 inside of the moat, so that the powder will stay inside of the moat. Next, heating at 700 deg.C makes resist 7 and isopropyl alcohol both disappear. In the above method, the device can be massproduced, the operation is simple, and the reliability of the product improves.

85. 发明专利

JPS5472316A SAFETY DEVICE FOR EXHAUST BYPASS TYPE TURBOOCHARGER 失效
公开(公告)号：JPS5472316A
公开(公告)日：1979-06-09
申请号：JP13792977
申请日：1977-11-18
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： F02B37/12 , F02B37/18 , F02B39/16 , F02D23/02
摘要： PURPOSE:To permit reliable detection and disposal regarding a failure of operation of an exhaust bypass valve by coupling an intake tube communicating compressor and diesel engine through a pressure switch to an alarm unit. CONSTITUTION:A pressure switch 14 is provided on an intake tube 5 communicating a compressor 2 and a diesel engine 4, and the tip of a rod 14 of the switch is held in contact with a movable piece of a switch 15 connected to a solenoid controlled valve 22. With this arrangement, when the pressure in the intake tube 5 is extraordinarily increased with a failure of operation of an exhaust bypass valve 8, a diaphragm 18 is leftwardly moved against a compression spring 19 within an atmospheric air chamber to move the rod 20 to the left side so as to bring the movable contact 15 into contact with a fixed contact 15. As a result, the solenoid controlled valve 22 is excited to cause throttling of an oil supply pipe 23, thus reducing the rate of fuel supply from fuel tank 24 to engine 4 and also turning on an alarm lamp 25.

86. 发明专利

JPS5429987A FORMING METHOD OF SELECTIVE VAPORRDEPOSITION FILM 失效
公开(公告)号：JPS5429987A
公开(公告)日：1979-03-06
申请号：JP9508477
申请日：1977-08-10
申请人： HITACHI LTD
发明人： MATSUZAWA MANABU , URIYUU TAKESHI , NONAKA YOSHIO , YAMADA KOUHEI , YAMADA KOUICHIROU
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/306
摘要： PURPOSE:To form selectively a vapor-deposition film by side-etching a spacer between a photo resist and substrate.

87. 发明专利

JPS5413828A EGR MECHANISM FOR ENGIN WITH TURBOCHRGER 失效
公开(公告)号：JPS5413828A
公开(公告)日：1979-02-01
申请号：JP7937377
申请日：1977-07-01
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： F02B3/06 , F02B37/00 , F02B37/16 , F02D21/08 , F02D23/00 , F02M25/07
摘要： PURPOSE:To simultaneously attain the diminution of NOx and the improvement of running perofrmance, by providing a forced feed air pipe with an orifice and by connecting a diaphragm control valve upstream of the orifice and connecting an EGR passage having a one-way valve downstream of the orifice.

88. 发明专利

JPS5348480A PRODUCTION OF TRANSISTOR 失效
公开(公告)号：JPS5348480A
公开(公告)日：1978-05-01
申请号：JP12278976
申请日：1976-10-15
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/72
摘要： PURPOSE:To improve breakdown voltage by terminating the exposed part of the PN junction between collector and base at the wall surface of moat grooves of a regular bevel angle and passivating this with a glass film.

89. 发明专利

JPS5336471A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5336471A
公开(公告)日：1978-04-04
申请号：JP11080876
申请日：1976-09-17
申请人： HITACHI LTD
发明人： YAMADA KOUHEI , YAMADA KOUICHIROU , MATSUZAWA MANABU , URIYUU TAKESHI , NONAKA YOSHIO , AZUMA TAKASHI
IPC分类号： H01L21/76 , H01L21/28 , H01L21/316 , H01L21/60
摘要： PURPOSE:To manufacture a semiconductor device by using a high-performance and high-reliability glass protection film which can form the micro electrode window and can prevent the erosion with no property deterioration due to the external contamination.

90. 发明专利

JPS52154375A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52154375A
公开(公告)日：1977-12-22
申请号：JP7111376
申请日：1976-06-18
申请人： HITACHI LTD
发明人： KIKUCHI SAKAE , SUGAWARA KATSUO , YAMADA KOUICHIROU , YAMADA KOUHEI
IPC分类号： H01L21/314 , H01L21/331 , H01L21/56 , H01L29/08 , H01L29/40 , H01L29/73 , H01L29/74
摘要： PURPOSE:To reduce leak currents by providing grooves down to an N layer from the surface of a semiconductor device comprising lamination of an N type layer and P type layer on an N type layer, and forming electrodes extending from the P type layer to the inner side faces of the grooves through an insulation layer.

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