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    • 83. 发明专利
    • SEMICONDUCTOR MEMORY DEVICE
    • JPS63225997A
    • 1988-09-20
    • JP5881087
    • 1987-03-16
    • HITACHI LTD
    • NAGASHIMA YASUSHI
    • G06F12/02G06F12/04G11C11/34G11C11/401
    • PURPOSE:To enable a sector length to be designated and to attach a serial access function, by supplying a sector address and a sector length signal to a multiplication circuit, and performing the access of a memory cell in series via the output signal of the circuit. CONSTITUTION:A readout mode is decided by fetching the sector address SA and the sector length DL by buffers ADB and DLB at a timing when a chip select signal, the inverse of CS changes from an H to an L, and detecting those by a timing control circuit TC when a write enable signal is set at the H. The multiplication circuit AU multiplies the signal SA by the DL, and sends an address signal AY to a shift register SR via a YDCR, and designates a leading address. Also, an address signal AX from the AU is inputted to an XDCR via an ACOUT, and the selection operation of a word line is performed. Next, a readout signal is sent to an FF by a data timing signal phis. The SR starts a shift operation by a clock signal CK, and outputs a data in series from an input/output circuit IOB synchronizing with the CK.
    • 84. 发明专利
    • SEMICONDUCTOR MEMORY DEVICE
    • JPS63225995A
    • 1988-09-20
    • JP5880987
    • 1987-03-16
    • HITACHI LTD
    • NAGASHIMA YASUSHIKAJIMOTO TAKESHI
    • G11C11/401G11C8/04G11C11/34
    • PURPOSE:To attach a serial access function, by selecting the access of a memory cell corresponding to plural bits setting a sector address as a leading address by synchronizing with a timing signal from the outside. CONSTITUTION:When the readout of 256 bits is performed, a timing control circuit TC generates a data transfer timing signal phis while a sector gap signal is outputted by the output signal SG of a counter circuit CCOUNT and low- order sector address signals A0 and A1. In such a way, a readout signal selected already and responding for the next word line is transferred to an FF. By supplying a signal CK, the readout of the 256 bits corresponding to a 0th sector is enabled by a shift register SR. Also, an address step pulse thetac from the TC performs step of +1, and address signals A2'-A11' for the next word line are outputted, and an XDCR starts the selection operation of the word line corresponding to the next address and the amplification operation of a sense amplifier.
    • 85. 发明专利
    • SEMICONDUCTOR STORAGE DEVICE
    • JPS63136394A
    • 1988-06-08
    • JP28173386
    • 1986-11-28
    • HITACHI LTD
    • NAGASHIMA YASUSHI
    • G11C11/401G11C11/34
    • PURPOSE:To obtain an image memory of optional size without providing external mount components by serially inputting/outputting storage data of a memory cell coupled with a selected word line and data line according to a clock signal supplied externally. CONSTITUTION:The initial value of a row address counter RAC and a pointer PNT are designated via external terminals Ao-Ai at the time of start. The pointer PNT shifts the selection signal written in the bit corresponding to the head column address stored in a column address register CAR according to the serial clock signal SC fed externally. When the word line of the final address is selected by the row address counter RAC, the final row address detection signal raf is formed and the row address counter RAC is initialized again. Thus, the word and data lines starting selection are designated as the head row and column address in the dynamic RAM and the image memory of optional size is constituted.