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81. 发明专利

JP2000338673A POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY 失效
公开(公告)号：JP2000338673A
公开(公告)日：2000-12-08
申请号：JP14677499
申请日：1999-05-26
申请人： FUJI PHOTO FILM CO LTD
发明人： SATO KENICHIRO , KODAMA KUNIHIKO , AOSO TOSHIAKI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To obtain a superior positive type photoresist composition for exposure with far UV having a wide defocus latitude of an isolated line pattern by incorporating a compound which generates an acid when irradiated and an acid decomposable resin containing specified repeating units. SOLUTION: This photoresist composition contains a compound which generates an acid when irradiated and an acid decomposable resin containing repeating units of formulae I and II. In the formula I, Ra' is H or a 1-4C alkyl, in the case of m'=0 or 1, Ra' is a 1-4C alkyl, Rb' to Re' are each H or an alkyl, m' is an integer of 0-2, n' is an integer of 1-3 and m'+n'=2 to 6. In the formula II, R1 is H, a halogen or a 1-4C alkyl and R2-R4 are each H or hydroxy but at least one of R2-R4 is hydroxy.

82. 发明专利

JP2000214588A POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY 失效
公开(公告)号：JP2000214588A
公开(公告)日：2000-08-04
申请号：JP1851199
申请日：1999-01-27
申请人： FUJI PHOTO FILM CO LTD
发明人： SATO KENICHIRO , KODAMA KUNIHIKO , AOSO TOSHIAKI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To improve suitability to a standard developer and to ensure good density dependency of a formed resist pattern and superior sensitivity to a short-wavelength light source by using a specified acid decomposable resin. SOLUTION: The positive photoresist composition contains a compound which generates an acid when irradiated with active light or radiation and a resin containing (a) repeating units having an alkali-soluble group protected by a group containing an alicyclic hydrocarbon structure represented by formula I or the like, (b) repeating units represented by formula II and (c) repeating units represented by formula III. The content of the repeating units (c) is 5-18 mol% of all the repeating units of the resin. The resin is decomposed by the action of the acid and increases its alkali solubility. In the formula I, R11 is methyl, ethyl or the like and Z is an atomic group required to form an aliphatic hydrocarbon group together with C. In the formulae II and III, R5 and R6 are each H, halogen or the like and X is a divalent combining group.

83. 发明专利

JP2000147775A POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE BY FAR UV RAY 失效
公开(公告)号：JP2000147775A
公开(公告)日：2000-05-26
申请号：JP32705298
申请日：1998-11-17
申请人： FUJI PHOTO FILM CO LTD
发明人： SATO KENICHIRO , KODAMA KUNIHIKO , AOSO TOSHIAKI
IPC分类号： H01L21/027 , C08F8/12 , C08F220/10 , C08K5/00 , C08L33/04 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To obtain a compsn. having improved adaptability for a standard developer and good dependency on the state of a resist pattern whether the pattern is dense or sparse and having excellent sensitivity for a light source of short wavelength by incorporating a resin which has each specified repeating unit and which is decomposed by the effect of an acid to increase its solubility with an alkali. SOLUTION: This photoresist contains a compd. which produces an acid by irradiation of active rays or radiation and a resin which contains a repeating unit having alkali soluble groups protected with at least one kind of group expressed by formula I to III having an alicyclic hydrocarbon structure and which is decomposed by the effect of an acid to increase its solubility with an alkali. In formulae I to III, R11 is a methyl group, ethyl group or the like, z is a group of atoms necessary to form an alicyclic hydrocarbon group with carbon atoms, each of R12 to R16 is independently a 1-4C straight-chain or branched alkyl group or alicyclic hydrocarbon group.

84. 发明专利

JPH112901A POSITIVE PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH112901A
公开(公告)日：1999-01-06
申请号：JP10952697
申请日：1997-04-25
申请人： FUJI PHOTO FILM CO LTD
发明人： KODAMA KUNIHIKO , AOSO TOSHIAKI , UENISHI KAZUYA
IPC分类号： G03F7/004 , G03F7/00 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To enhance sensitivity and to obtain a superior resist pattern by incorporating a specified compound to be allowed to release a sulfonic acid by irradiation with activated rays or the like and a resin comprising repeating units having groups to be decomposed by action of an acid to increase solubility in an alkaline developing solution. SOLUTION: The positive photosensitive composition contains the compound to be allowed to release a sulfonic acid by irradiation with activated rays or the like and represented by formula I and the resin comprising the repeating units having the groups to be decomposed by action of an acid to increase solubility in the alkaline developing solution, and each of the repeating units is represented by formula II or III, and in formulae I-II, Y is an optionally substituted straight or branched or cyclic alkyl or optionally substituted aralkyl group or the like; R22 is an H atom or an optionally substituted straight or branched or cyclic alkyl or optionally substituted aralkyl group.

85. 发明专利

JPH112895A POSITIVE PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH112895A
公开(公告)日：1999-01-06
申请号：JP15699597
申请日：1997-06-13
申请人： FUJI PHOTO FILM CO LTD
发明人： KODAMA KUNIHIKO , AOSO TOSHIAKI , YAGIHARA MORIO
IPC分类号： G03F7/004 , C08L25/18 , G03F7/00 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain the positive photosensitive composition good in the profiles of a resist pattern and high in sensitivity and resolution and to prevent variation of performance with the lapse of time after exposure by incorporating a specified compound to be allowed to generate sulfonic acid by irradiation with activated rays or the like and a resin having groups each decomposable by action of acid and capable of increasing solubility in an alkaline developing solution. SOLUTION: This photosensitive composition contains the compound to be allowed to generate the sulfonic acid by irradiation with activated rays or radiations represented by formula I and the resin having groups each decomposable by action of acid and capable of increasing solubility in an alkaline developing solution. In formula I, each of R1 -R10 is an H or halogen atom or the like and at least one of them is a group represented by formula II or III; in formulae II and III, R' is an H atom or an alkyl group or the like; R" is an alkyl or aryl or the like; Y is a straight or branched alkylene group or the like; in formula I, X is an n-valent 1-20C straight or branched or cyclic alkylsulfonate ion or the like; and (n) is 1, 2, or 3.

86. 发明专利

JPH08339079A POSITIVE TYPE PHOTORESIST COMPOSITION 失效
公开(公告)号：JPH08339079A
公开(公告)日：1996-12-24
申请号：JP14653895
申请日：1995-06-13
申请人： FUJI PHOTO FILM CO LTD
发明人： SATO KENICHIRO , MOMOTA ATSUSHI , KODAMA KUNIHIKO
IPC分类号： G03F7/022 , H01L21/027
摘要： PURPOSE: To obtain a compsn. for super microfabrication having high resolving power and low dependency on film thickness by specifying the structure and content of a quinonediazido type photosensitive substance in a positive type photoresist contg. an alkali-soluble resin, etc., and the photosensitive substance. CONSTITUTION: This photoresist compsn. contains an alkali-soluble resin, a low molecular compd. having a phenolic hydroxyl group and 1,2- quinonediazido-5(and/or -4-)sulfonic diester of a polyhydroxy compd. represented by the formula. The pattern area of the quinonediazidosulfonic diester measured by high-speed liq. choromatography at 254nm wavelength is >=50% of the total pattern area and the weight of all the quinonediazido type photosensitive substance is 23-45% of the total weight of all the solid components in this compsn. In the formula, each of R1 -R8 is alkyl, etc., each of R, R', R" and R"' is H, etc., each of (a) and (b) is 1-3 and A is a divalent combining group.

87. 发明专利

JP2003173023A POSITIVE PHOTOSENSITIVE COMPOSITION 审中-公开
公开(公告)号：JP2003173023A
公开(公告)日：2003-06-20
申请号：JP2001371498
申请日：2001-12-05
申请人： FUJI PHOTO FILM CO LTD
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive photosensitive composition having high resolving power and excellent in defocus latitude and profile. SOLUTION: In the positive photosensitive composition comprising (A) a compound that generates an acid upon irradiation with an active ray or radiation and (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase solubility in an alkali developing solution, (A) the compound that generates an acid upon irradiation with an active ray or radiation is a compound having a phenacylsulfonium salt structure or a sulfonium salt not having an aromatic cyclic structure and its anionic moiety is an anion of an aromatic sulfonic acid substituted by at least one fluorine atom and/or a group having at least one fluorine atom. COPYRIGHT: (C)2003,JPO

88. 发明专利

JP2003122012A POSITIVE RESIST COMPOSITION 审中-公开
公开(公告)号：JP2003122012A
公开(公告)日：2003-04-25
申请号：JP2001320380
申请日：2001-10-18
申请人： FUJI PHOTO FILM CO LTD
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F20/00 , C08F24/00 , C08K5/42 , C08L33/00 , C08L37/00 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in various characteristics such as resolution and dependence on the pattern density. SOLUTION: The positive resist composition is characterized in containing (A) a compound which generates a fluorine-substituted sulfonic acid having 2 or more carbon atoms by irradiation of active rays or radiation and (B) a resin which contains a specified repeating unit and which decomposes by the effect of an acid to increase the solubility with an alkali developer liquid.

89. 发明专利

JP2002351079A POSITIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JP2002351079A
公开(公告)日：2002-12-04
申请号：JP2001155897
申请日：2001-05-24
申请人： FUJI PHOTO FILM CO LTD
发明人： SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/18 , C08F220/28 , G03F7/033 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive type resist composition, which is suitably used in microphoto fabrication using far ultraviolet ray, particularly ArF excimer laser beam and has excellent exposure margin and in which the generation of development defects is reduced. SOLUTION: The positive type resist composition contains (A) a resin which has a specific alicyclic hydrocarbon group and in which the dissolution rate to an alkali developer is increased by the action of an acid, and (B) a compound having a specific structure to generate an acid by the irratidation with active ray or radiation.

90. 发明专利

JP2002351077A POSITIVE TYPE PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JP2002351077A
公开(公告)日：2002-12-04
申请号：JP2001152587
申请日：2001-05-22
申请人： FUJI PHOTO FILM CO LTD
发明人： KODAMA KUNIHIKO , SATO KENICHIRO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive type photosensitive composition having high sensitivity, wide defocus latitude when zone illumination is used and hardly generating side lobe when a pattern is formed by using a half-tone phase shift mask. SOLUTION: The positive photosensitive composition contains (A) a specific acid generating agent generating an acid by the irradiation with active ray or radiation and (B) a resin having a single cyclic or polycyclic aliycyclic hydrocarbon structure, decomposed by the action of the acid and having solubility increased in an alkali developer.

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