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    • 85. 发明专利
    • Manufacture of heat exchanger
    • 热交换器的制造
    • JPS61112359A
    • 1986-05-30
    • JP23319884
    • 1984-11-07
    • Hitachi Ltd
    • KATO MITSUOFUNAMOTO TAKAOKAJIWARA RYOICHIWACHI HIROSHITAKAHASHI KAZUYAMATSUZAKA KYO
    • H05K7/20F28F3/12H01L21/48H01L23/34
    • H01L21/4882F28D2021/0029F28F3/12F28F2275/025
    • PURPOSE:To obtain a flexible cooling body having minute cooling paths, by providing a bonding alloy metal film on the surface of a heat conducting material, forming cooling path grooves, bonding the formed pieces, and coating the body by a macromolecular film. CONSTITUTION:A bonding metal film 2 is formed on one flat surface of a heat conducting material. Then, by not etching, cooling path grooves 3 are formed in the heat conducting material 1, on which the bonding metal film 2 is formed. The heat conducting materials 1 and 1', in which the cooling path grooves are formed, are made to face and bonded. Thus cooling path 4 are provided. Then, the heat conducting material 1 having the cooling paths 4 in the inside is coated by a macromolecular material 5. Thus a cooling structure body is manufactured. Heat yielded during the operation of a semiconductor element is efficiently removed from the heat transfer surface of the cooling structure body. This body is effective in high density mounting of electronic parts, and in the implementations of the compact devices and light weight.
    • 目的:为了获得具有微小冷却路径的柔性冷却体,通过在导热材料的表面上设置接合合金金属膜,形成冷却通道凹槽,粘合成形件,并通过大分子膜涂覆本体。 构成:在导热材料的一个平坦表面上形成接合金属膜2。 然后,通过不蚀刻,在形成有接合金属膜2的导热材料1中形成冷却路径槽3。 其中形成有冷却通道槽的导热材料1和1'被制成面和粘合。 由此设置冷却路径4。 然后,内部具有冷却通路4的导热材料1被高分子材料5涂覆。因此制造冷却结构体。 半导体元件的运转时产生的热量有效地从冷却结构体的传热面移除。 该机体在电子部件的高密度安装以及紧凑型装置的实施和轻量化方面是有效的。
    • 86. 发明专利
    • Method for diffused junction
    • 扩散接头的方法
    • JPS61103685A
    • 1986-05-22
    • JP22399984
    • 1984-10-26
    • Hitachi Ltd
    • WACHI HIROSHIFUNAMOTO TAKAOKATO MITSUOTAKAHASHI KAZUYAMATSUZAKA KYO
    • B23K20/00B23K20/24
    • B23K20/24
    • PURPOSE:To obtain a joint part in which a joint failure and a void are scarcely generated, by forming directly a eutectic compound layer of a specified thickness in advance on a contact surface of two metallic surfaces. CONSTITUTION:When executing a diffused junction by making joint surfaces of two metallic members contact, a part which becomes the joint surface is processed by an Ar ion beam, and cleaned, and thereafter, a eutectic compound layer of 0.01-5mum thickness is formed. Subsequently, it is opposed to the other member to be joined, and its diffused junction is executed in a vacuum or inert atmosphere. In this regard, the eutectic compound thin film alloy layer is formed by using Cu as its main component, also adding Ti or Mn, Ag and Si, and executing a spatter vapor-deposition, and a molting start temperature of the eutectic compound alloy layer is adjusted so as to become lower than that of the material to be joined.
    • 目的:为了获得几乎不产生接合失效和空隙的接合部,通过在两个金属表面的接触表面上预先形成特定厚度的共晶化合物层。 构成:通过使两个金属构件的接合面接触而进行扩散接合时,成为接合面的部分用Ar离子束进行处理,进行清洗,其后形成0.01-5μm厚的共晶化合物层。 随后,与其他构件相对接合,并且其扩散结在真空或惰性气氛中执行。 在这方面,通过使用Cu作为主要成分,还添加Ti或Mn,Ag和Si,进行飞溅气相沉积和共晶复合合金层的蜕变开始温度来形成共晶复合薄膜合金层 被调节成比被接合材料低。
    • 88. 发明专利
    • Formation of low melting point alloy layer for diffusion joining
    • 低熔点合金层的形成用于扩散加工
    • JPS59118292A
    • 1984-07-07
    • JP22589282
    • 1982-12-24
    • Hitachi Ltd
    • KATOU MITSUOFUNAMOTO TAKAOTAKAHASHI KAZUYAOGURA SATOSHICHIKAZAKI MITSUOFUKUI HIROSHI
    • B23K20/00B23K1/00B23K1/20B23K20/16B23K20/24
    • B23K20/16
    • PURPOSE:To form uniformly a low melting point alloy layer for diffusion joining on joint surface by providing a film for preventing the formation of the low melting point alloy layer on the surface of a material to be joined except its joint surface then forming the low melting point alloy layer on the joint surface and removing the above-mentioned preventing film by an etching treatment. CONSTITUTION:A film 3 for preventing the formation of a low melting point alloy is formed on the part of a material to be joined 1 except its joint surface 2, then a low melting point alloy layer 4 is formed by a packing method on the surface 2. An etching preventive film 5 is formed on the surface of said layer 4 and is subjected to an etching treatment to remove the film 3. The film 5 is then removed by using a solvent so that the low melting point alloy layer for diffusion joining is formed only on the surface 2. The low melting point alloy layer is easily formed on the joint surface having an intricate shape by the above-mentioned method.
    • 目的:通过在接合面外提供防止在待接合材料表面形成低熔点合金层的膜,均匀地形成用于扩散接合在接合面上的低熔点合金层,然后形成低熔点 并且通过蚀刻处理除去上述防止膜。 构成:除了接合面2之外,在被接合材料1的一部分上形成防止形成低熔点合金的膜3,然后通过表面上的填充法形成低熔点合金层4 在所述层4的表面上形成防腐蚀膜5,并对其进行蚀刻处理以去除膜3.然后通过使用溶剂除去膜5,使得用于扩散接合的低熔点合金层 仅在表面2上形成。通过上述方法,在具有复杂形状的接合面上容易地形成低熔点合金层。