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71. 发明专利

JP2003526981A 失效
公开(公告)号：JP2003526981A
公开(公告)日：2003-09-09
申请号：JP2001566255
申请日：2001-01-31
IPC分类号： H03F1/02 , H03F1/30 , H03F3/195
摘要： The circuit has connections (23,25) for first and second supply potentials, a measurement connection (24) for connection to a measurement resistance (3) in series with the load current path of a HF transistor (1), an output connection (256) for coupling to the transistor's control connection, a differencing element (20) with connections to the supply potentials and signal inputs connected to a reference potential (21) and the measurement connection (24) and a current source (22) controlled by a differencing element and connected to the output connection.

72. 发明专利

JP2003243945A RADIO FREQUENCY POWER AMPLIFIER MODULE 审中-公开
公开(公告)号：JP2003243945A
公开(公告)日：2003-08-29
申请号：JP2002217789
申请日：2002-07-26
申请人： HITACHI LTD
发明人： KURIYAMA SATORU , ONISHI MASAMI
IPC分类号： H03F3/189 , H03F3/193 , H03F3/195
摘要： PROBLEM TO BE SOLVED: To provide a radio frequency power amplifier of multistage amplifying method by reducing instability in output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage and by reducing distortion of output power caused by electromagnetic coupling of the bias supply terminals and the interconnections of each stage to thereby provide a high efficiency. SOLUTION: The mutual interference between circuits via a power line in the radio frequency power amplifier can be reduced, which is provided with a first interconnection 50 connected to a terminal 40 for supplying a voltage for collector driving to power amplifying transistors 10, 11, a second interconnection 60 connected to a terminal 41 for supplying a voltage for collector driving to second transistors 12, 13 controlling a base bias voltage of the transistors 10, 11, and one or more ground parts 70 for electromagnetic shield, wherein the first and second interconnections are separated by the one or more ground parts 70 for electromagnetic shield. COPYRIGHT: (C)2003,JPO

73. 发明专利

JP3390235B2 失效
公开(公告)号：JP3390235B2
公开(公告)日：2003-03-24
申请号：JP33344493
申请日：1993-12-27
IPC分类号： H03F1/02 , H03F3/195 , H03F3/30 , H03F3/45 , H03G3/30 , H03G5/16

74. 发明专利

JP2002204129A AMPLIFIER CIRCUIT FOR AM BROADCAST 失效
公开(公告)号：JP2002204129A
公开(公告)日：2002-07-19
申请号：JP2000400737
申请日：2000-12-28
申请人： NIIGATA SEIMITSU KK
发明人： IKEDA TAKESHI , MIYAGI HIROSHI
IPC分类号： H03F1/22 , H03F1/26 , H03F3/16 , H03F3/193 , H03F3/195 , H04B1/16
摘要： PROBLEM TO BE SOLVED: To integrate an RF amplifier for AM broadcasting with other circuits on one chip while restraining generation of a flicker noise as possible. SOLUTION: In an amplifier circuit for AM broadcasting which outputs the inputted AM broadcasting signals after amplifying them by an FET, the FET for amplifying signals is composed of p-channel MOSFETs 4 and 5 of comparatively low noise. As a result, much more circuits including an RF amplifier for AM broadcasting can be integrated on one chip while restraining the flicker noise down to the minimum level, and accordingly downsizing circuits and reducing noise.

75. 发明专利

JP3207451B2 失效
公开(公告)号：JP3207451B2
公开(公告)日：2001-09-10
申请号：JP13881691
申请日：1991-06-11
IPC分类号： H01L27/04 , H01L21/822 , H01L49/02 , H03F3/195

76. 发明专利

JP2001094034A HYBRID IC PACKAGE 失效
公开(公告)号：JP2001094034A
公开(公告)日：2001-04-06
申请号：JP27176799
申请日：1999-09-27
申请人： NIPPON ELECTRIC ENG
发明人： KUROSE SHINYA
IPC分类号： H01L25/18 , H01L23/02 , H01L25/04 , H03F3/195 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To prevent generation of swelling of frequency characteristic and oscillation which are caused by the phenomenon where a part of a high-level signal permeates in the input side through space propagation due to the level difference between an inputted low level signal and an outputted high-level signal, when a multi-stage high-gain amplifier is realized in a package divided in several stages, in a high-frequency band. SOLUTION: The number of stages of a multi-stage amplifier circuit per dielectric substrate is reduced to the degree that oscillation is not generated, and a dielectric substrate is divided and arranged on the upper surface and the lower surface of the inside of a hybrid IC package.

77. 发明专利

JP3143897B2 失效
公开(公告)号：JP3143897B2
公开(公告)日：2001-03-07
申请号：JP31475397
申请日：1997-11-17
IPC分类号： H03F3/195 , H03F3/193

78. 发明专利

JP2000260783A SEMICONDUCTOR DEVICE, ITS MANUFACTURE, HIGH-FREQUENCY POWER AMPLIFIER, AND RADIO COMMUNICATION APPARATUS 失效
公开(公告)号：JP2000260783A
公开(公告)日：2000-09-22
申请号：JP6525399
申请日：1999-03-11
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： HIRATA KOJI , TAKAZAWA HIROYUKI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737 , H03F3/195 , H03F3/60
摘要： PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor of superior high-speed property. SOLUTION: This semiconductor device has a sub-collector layer 2, a collector layer 3, a base layer 4, an emitter layer (InGaP layer) 5, and an emitter cap layer 6, which are formed by in sequence respectively overlaying them in a predetermined form at one face side of a semi-insulative GaAs substrate, and also has a heterojunction bipolar transistor of such a structure that the inner end part of a base electrode 9 is overlaid on the margin of the emitter layer 5, and the base electrode 9 is electrically connected to the base layer with an alloy layer through alloy processing of the emitter layer 5 under the base electrode. The emitter layer 5 is selectively formed on the base layer 4, and the base electrode 9 is extended from a peripheral part of the emitter layer 5 to the base layer 4, and the alloy layer is extended up to a depth in the middle of the base layer 4. The edge of the base layer 4 is positioned more to the inside than to the outer edge of the base electrode 9.

79. 发明专利

JP3070526B2 失效
公开(公告)号：JP3070526B2
公开(公告)日：2000-07-31
申请号：JP15006197
申请日：1997-05-23
IPC分类号： H03F3/60 , H03F3/195

80. 发明专利

JP2000101370A TRANSISTOR CIRCUIT 失效
公开(公告)号：JP2000101370A
公开(公告)日：2000-04-07
申请号：JP26933798
申请日：1998-09-24
申请人： NEC SHIZUOKA LTD
发明人： UCHIDA ATSUSHI
IPC分类号： H03F3/195 , H03D7/14 , H03F3/19 , H03F3/343 , H03F3/45 , H03G3/10 , H04B1/18 , H03F3/189
摘要： PROBLEM TO BE SOLVED: To provide a transistor circuit which realizes transmission of a signal to a post-stage when a large amplitude signal is inputted, even if it does use a coupling capacitor or in spite of its using a low-voltage power source. SOLUTION: In a radio receiver consisting of low-voltage operated and multistage-connected amplifier circuits 3 and 4 which amplifies a received radio signal without a coupling capacitor, variable resistor circuits, as collector load resistors of transistors TR1, TR2 which are active elements of the amplifier circuits, whose resistance value (impedance value) varies according to a collector current, are used to make the resistance values of the variable resistor circuits lower when large amplitude is input and to suppress the VCE fluctuation of a transistor at inputting a large amplitude signal. Thus, a signal prevented from being transmitted to an amplifier, or to a frequency converter at a post- stage, even at inputting of the large amplitude signal, can be eliminated.

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