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    • 72. 发明专利
    • Light emitting electron tube
    • 发光电子管
    • JPS6122560A
    • 1986-01-31
    • JP14263184
    • 1984-07-10
    • Matsushita Electric Works Ltd
    • UETSUKI TADAO
    • H01J63/08H01J63/04
    • H01J63/04
    • PURPOSE:To increase light emitting efficiency by arranging a grid which controls an electron to a value suitable to excite light emitting gas. CONSTITUTION:An electron emitted from a cathode 2 is accelerated by an anode 3 which locates at a distance of L1 from the cathode 2, and decelerated by a grid 7 which locates at a distance of L2 from the anode 3. Finally, emitted electron energy is controlled to 6-10eV. Since the distance (L1+L2) is smaller than mean free path lambda of electron and the distance L3 between the anode 3 and the inner surface of a tube 1 is very large compared with the mean free path lambda, an electron emitted from a cathode 2 passes through an anode 3, and collides against a space 4 to be excited. Thereby, light emitting efficiency is increased.
    • 目的:通过将控制电子的栅格设置为适合于激发发光气体的值来提高发光效率。 构成:从阴极2发射的电子被阳极3加速,阳极3位于与阴极2相距L1的距离处,并且通过位于与阳极3的距离L2的栅极7减速。最后,发射的电子能量 被控制在6-10eV。 由于距离(L1 + L2)小于电子的平均自由路径λ,并且阳极3与管1的内表面之间的距离L3与平均自由路径λ相比非常大,所以从阴极发射的电子 2通过阳极3,并与空间4碰撞以被激发。 由此,发光效率提高。
    • 73. 发明专利
    • Manufacture of semiconductor pressure transducer
    • 半导体压力传感器的制造
    • JPS59214267A
    • 1984-12-04
    • JP8748483
    • 1983-05-20
    • Toshiba Corp
    • OCHIAI NOBUOTSUMAGARI TAKASHI
    • G01L9/04G01L9/00H01J63/04H01L29/84
    • H01J63/04H01L29/84
    • PURPOSE:To form a diaphragm with high yield by forming a recessed section for shaping the diaphragm to a silicon single crystal substrate through machining and etching and processing the inner surface of the recessed section by a strong alkali group etching liquid. CONSTITUTION:A columnar grind stone 10 is operated in planetary movement manner to bore a recessed section 11. The lower bottom, outer circumferential surface and upper end surface of a diaphragm 12 are coated with a photo-resist, etc. as a mask 13, and the mask is etched and processed by a strong alkali group etching liquid. A finely crushed layer generated on the inner surface of the recessed section 11 through grinding machining is removed through the etching processing. The fringe section of the bottom section of the recessed section 11 is etched in an anisotropic manner by the strong alkali group etching liquid, and a minute inclined plane 14 having a gradient at a fixed angle theta is formed. Accordingly, diaphragms in various size corresponding to various objects can be manufactured with high accuracy and high efficiency.
    • 目的:通过形成用于将隔膜成形为硅单晶基板的凹部,通过强碱基蚀刻液体的加工蚀刻加工凹部的内表面,形成高产率的隔膜。 构成:柱状研磨石10以行星运动的方式操作以钻出凹部11.隔膜12的下底,外周面和上端面涂覆有作为掩模13的光致抗蚀剂等, 并且掩模被强碱基蚀刻液蚀刻和加工。 通过研磨加工除去在凹部11的内表面上产生的细碎层。 通过强碱性蚀刻液以各向异性的方式蚀刻凹部11的底部的边缘部,形成具有固定角度θ的倾斜的微小倾斜面14。 因此,可以以高精度和高效率制造对应于各种物体的各种尺寸的膜片。
    • 79. 发明专利
    • Field emission lamp
    • 场发射灯
    • JP2011108409A
    • 2011-06-02
    • JP2009260055
    • 2009-11-13
    • Pureron Japan Co Ltd株式会社ピュアロンジャパン
    • HABA HOKINAKAJIMA HIDETOSHI
    • H01J63/06H01J63/04
    • PROBLEM TO BE SOLVED: To increase the adhesion strength of a phosphor layer 6 in a field emission lamp where a stack of a glass substrate 1, the phosphor layer 6 and an anode layer 7 is flatly disposed opposite to an electron emitter 3, with the phosphor layer 6 excited to emit light, when irradiated with an electron ray emitted from the electron emitter 3. SOLUTION: The phosphor layer 6 contains 10 to 20 wt% low-melting-point nonlead glass which contains bismuth. The stack is made by stacking the glass substrate 1, the phosphor layer 6, the anode layer 7 in that order from the side far from the electron emitter 3, and the anode layer 7 is a vapor deposited film of aluminum. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:为了提高场致发射灯中的荧光体层6的粘合强度,其中玻璃基板1,荧光体层6和阳极层7的堆叠与电子发射体3相对地平坦地设置 当荧光体层6被从电子发射体3发射的电子射线照射时激发荧光体层6发光。解决方案:荧光体层6含有含有铋的10至20重量%的低熔点非铅玻璃。 通过从远离电子发射体3的一侧依次层叠玻璃基板1,荧光体层6,阳极层7,并且阳极层7是铝的气相沉积膜而制成的。 版权所有(C)2011,JPO&INPIT