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71. 发明专利

JP2009022106A Dc-dc converter, driver ic and system in package 有权
标题翻译： DC-DC转换器，驱动器IC和封装中的系统
公开(公告)号：JP2009022106A
公开(公告)日：2009-01-29
申请号：JP2007182743
申请日：2007-07-12
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： HIRAO TAKASHI , HASHIMOTO TAKAYUKI , SHIRAISHI MASAKI
IPC分类号： H02M3/155 , H01L21/822 , H01L27/04 , H02M1/08
CPC分类号： H02M3/158 , H01L2224/05554 , H01L2224/0603 , H01L2224/48137 , H01L2224/48195 , H01L2224/49175 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/30107 , H03K17/162 , H03K17/6871 , H03K19/018521 , H03K2217/0081 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a DC-DC converter prevented in self turn-on and improved in power efficiency. SOLUTION: When a low-side MOSFET 103 is in an off-state by using a negative voltage generation capacitor 104 in a non-insulation-type DC-DC converter, self turn-on is prevented by applying a negative voltage between a gate and a source of the low-side MOSFET 103. When the low-side MOSFET 103 is in an on-state by the negative voltage generation capacitor 104, a positive voltage applied between the gate and the source of the low-side MOSFET 103 does not drop lower than a voltage VD of a gate driving DC power supply which is supplied from a gate power input terminal 119. Thus, power efficiency is improved. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种DC-DC转换器，防止自身接通并提高功率效率。解决方案：通过在非绝缘型DC-DC转换器中使用负电压产生电容器104使低端MOSFET 103处于截止状态时，通过在非绝缘型DC-DC转换器之间施加负电压来防止自身接通低端MOSFET 103的栅极和源极。当低压MOSFET 103由负电压产生电容器104处于导通状态时，施加在低侧MOSFET的栅极和源极之间的正电压 103不会低于从栅极电力输入端子119提供的栅极驱动DC电源的电压VD。因此，提高了功率效率。版权所有（C）2009，JPO＆INPIT

72. 发明专利

JP2008141084A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008141084A
公开(公告)日：2008-06-19
申请号：JP2006327791
申请日：2006-12-05
申请人： Nec Electronics Corp , Necエレクトロニクス株式会社
发明人： HAGA AKIRA
IPC分类号： H01L23/538 , H01L25/00
CPC分类号： H01L23/5386 , H01L23/50 , H01L24/73 , H01L25/0655 , H01L25/16 , H01L2224/32225 , H01L2224/48195 , H01L2224/48227 , H01L2224/73265 , H01L2924/15311 , H01L2924/19105 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, chips of which can be easily connected to each other, where the chips are different in pad pitch from each other. SOLUTION: The semiconductor device comprises: a first semiconductor chip 20 first pads of which are arranged at first intervals; a second semiconductor chip 30 second pads of which are arranged at second intervals larger than the first interval; and a relay substrate 40 which is placed between the first semiconductor chip 20 and the second semiconductor chip 30, first relay pads 40a of which are formed along a side facing the first semiconductor chip 20, where the first relay pads 40a are arranged at the first intervals, and second relay pads 40b of which are formed along a side facing the second semiconductor chip 30, where the second relay pads 40b are arranged at the second intervals; where the first semiconductor chip 20 and the second semiconductor chip 30 are connected to each other through the relay substrate 40. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其芯片可以容易地彼此连接，其中芯片彼此之间的垫间距不同。解决方案：半导体器件包括：第一半导体芯片20，其第一焊盘以第一间隔布置; 第二半导体芯片30，其第二焊盘以比第一间隔大的第二间隔布置; 以及设置在第一半导体芯片20和第二半导体芯片30之间的中继基板40，第一中继焊盘40a沿着面对第一半导体芯片20的一侧形成，其中第一中继焊盘40a布置在第一半导体芯片间隔，并且第二继电器垫40b沿着面向第二半导体芯片30的一侧形成，其中第二中继焊盘40b以第二间隔布置; 其中第一半导体芯片20和第二半导体芯片30通过中继基板40彼此连接。版权所有（C）2008，JPO＆INPIT

73. 发明专利

JP3947406B2 Semiconductor laser module 有权
公开(公告)号：JP3947406B2
公开(公告)日：2007-07-18
申请号：JP2002038081
申请日：2002-02-15
申请人：株式会社ルネサステクノロジ
发明人：立身井戸 , 健治古後 , 幸司吉田
IPC分类号： H01S5/062 , H01S5/068 , H01S5/022 , H01S5/042
CPC分类号： H04B10/504 , H01L2224/45144 , H01L2224/48091 , H01L2224/48195 , H01L2224/73265 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01S5/02212 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0427 , H01L2924/00014 , H01L2924/00
摘要： An LD module capable of generating a good optical waveform at a high speed of about 10 Gbit/s or higher in which a damping resistor is disposed in parallel with a laser-diode device in the inside of a laser-diode module, the damping resistor being preferably disposed between the connection point of the high-frequency transmission line and the terminating resistor, and the ground.

74. 发明专利

JP2007048962A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007048962A
公开(公告)日：2007-02-22
申请号：JP2005232040
申请日：2005-08-10
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NISHIMURA TAKAO , NARISAWA YOSHIAKI
IPC分类号： H01L21/52 , H01L25/00
CPC分类号： H01L24/97 , H01L2224/32245 , H01L2224/48091 , H01L2224/48195 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/07802 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent that a passive component is brought into contact with a die pad in a semiconductor device, constituted by connecting a semiconductor chip and the passive component with bonding wires, wherein the passive component is mounted via insulating paste-like adhesives on the die pad mounting the semiconductor chip. SOLUTION: After applying a first insulating adhesive on the die pad, the first insulating adhesive is made to harden. On the hardened first insulating adhesives, a second insulating adhesive is applied further so that the passive component may be attached fixedly. Even if stress is added at the time of arranging the passive component on the die pad, passive component is prevented from coming into direct contact with the die pad due to the first insulating adhesive. Then, the connection is carried out between the electrode pad of the semiconductor device on the die pad and the terminal of the passive component by wire bonding. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止无源部件与半导体器件中的管芯焊盘接触，其通过用接合线连接半导体芯片和无源部件构成，其中无源部件经由绝缘膏安装在芯片焊盘上安装半导体芯片的类似粘合剂。解决方案：在芯片焊盘上施加第一绝缘粘合剂之后，使第一绝缘粘合剂硬化。在硬化的第一绝缘粘合剂上，进一步施加第二绝缘粘合剂，使得被动部件可以固定地附接。即使在将无源部件布置在管芯焊盘上时施加应力，也可以防止被动部件由于第一绝缘粘接剂而与管芯焊盘直接接触。然后，通过引线接合在芯片焊盘上的半导体器件的电极焊盘与无源部件的端子之间进行连接。版权所有（C）2007，JPO＆INPIT

75. 发明专利

JP2006148268A Power amplification module 审中-公开
标题翻译：功率放大模块
公开(公告)号：JP2006148268A
公开(公告)日：2006-06-08
申请号：JP2004332527
申请日：2004-11-17
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KATO ICHIRO
IPC分类号： H03F3/60 , H03F1/42 , H04B1/04
CPC分类号： H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/665 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/4813 , H01L2224/48195 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F3/195 , H03F3/21 , H01L2224/45099 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a high frequency module capable f producing a high frequency amplifier amplifying an arbitrary frequency band with a common substrate. SOLUTION: A semiconductor chip 213 having a high frequency semiconductor element secured to a substrate 212 is wired to a conductor pattern formed on the substrate 212 by a bonding wire, and the bonding wire is connected to a bonding position J in the way of a distributed constant line formed by the conductor pattern so that a first inductor L22 and a second inductor L23 are handled separately and subjected to frequency matching or output load matching. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够产生利用公共基板放大任意频带的高频放大器的高频模块。解决方案：通过接合线将具有固定到基板212的高频半导体元件的半导体芯片213布线到形成在基板212上的导体图案，并且接合线以连接方式连接到接合位置J 由导体图案形成的分布常数线，使得第一电感器L22和第二电感器L23分别被处理并进行频率匹配或输出负载匹配。版权所有（C）2006，JPO＆NCIPI

76. 发明专利

JPWO2004032223A1 半導体装置审中-公开
公开(公告)号：JPWO2004032223A1
公开(公告)日：2006-02-02
申请号：JP2004541173
申请日：2002-09-30
申请人：株式会社ルネサステクノロジ
发明人：俊広三浦 , 俊広三浦 , 神代　岩道 , 岩道神代 , 菊池　栄 , 栄菊池
IPC分类号： H01L25/00 , H01L21/60 , H01L23/13 , H01L23/31 , H01L23/49 , H05K3/34
CPC分类号： H01L23/13 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/85 , H01L2224/05554 , H01L2224/29111 , H01L2224/32225 , H01L2224/45144 , H01L2224/48011 , H01L2224/4809 , H01L2224/48091 , H01L2224/48137 , H01L2224/48195 , H01L2224/48227 , H01L2224/48465 , H01L2224/48599 , H01L2224/49171 , H01L2224/73265 , H01L2224/8121 , H01L2224/81815 , H01L2224/85 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15153 , H01L2924/1517 , H01L2924/1579 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/351 , H05K3/3442 , H05K3/3463 , H05K2201/10636 , Y02P70/611 , H01L2924/00014 , H01L2924/20651 , H01L2924/00 , H01L2924/00012
摘要：主面(2b)に複数のパッド(2a)が形成された半導体チップ(2)と、両端に接続端子が形成されたチップ部品と、半導体チップ(2)と前記チップ部品とが搭載されるモジュール基板(4)と、前記チップ部品とモジュール基板(4)の端子(4a)とを、および半導体チップ(2)とモジュール基板(4)とを半田によって接続する半田接続部(5)と、半導体チップ(2)のパッド(2a)とこれに対応するモジュール基板(4)の端子(4a)とを接続する金線(8)と、半導体チップ(2)、前記チップ部品、半田接続部(5)および金線(8)を覆うとともに絶縁性のシリコーン樹脂などの弾性樹脂によって形成された封止部とからなり、ワイヤ高さ(H)を0.2mm以下とし、ワイヤ長さ(L)を1.5mm以下とすることにより、金線(8)の断線を防止することができる。

77. 发明专利

JP2004529484A Connection for transmitting high-frequency signals between the circuit and the discrete electrical components 审中-公开
公开(公告)号：JP2004529484A
公开(公告)日：2004-09-24
申请号：JP2002527567
申请日：2001-09-07
申请人：ヘイ,インコーポレイテッドHei, Incorporated
发明人：フアング、グアングフア
IPC分类号： H01L23/12 , H01L21/60 , H01L23/66 , H01L25/00 , H05K1/02 , H05K1/18 , H05K3/32
CPC分类号： H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/665 , H01L2224/05599 , H01L2224/45014 , H01L2224/45015 , H01L2224/45099 , H01L2224/48011 , H01L2224/48091 , H01L2224/48137 , H01L2224/48195 , H01L2224/48465 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01027 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01058 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19105 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H05K1/0237 , H05K1/181 , H05K3/328 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/00 , H01L2924/2076
摘要：高周波信号を処理するための装置は、トレースを有する回路基板を含む。回路基板上に取り付けられたダイ上に電気回路を製作する。ダイは頂面部を有し、頂面部に接触点を配置する。回路は、約２０ＧＨｚ以上の範囲の周波数を有する信号を処理するように構成する。回路基板上にコンデンサを取り付け、それは頂面部および底面部を有する。底部はトレースと対向する。ダイの頂面部の接触点とコンデンサの頂面部との間にワイヤが伸長する。このワイヤは約２ミルから約１２ミルの範囲の長さを有する。

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