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71. 发明专利

JP2003016973A Field emission type electron source 有权
标题翻译：场发射型电子源
公开(公告)号：JP2003016973A
公开(公告)日：2003-01-17
申请号：JP2001199837
申请日：2001-06-29
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI , BABA TORU
IPC分类号： H01J29/87 , H01J1/312 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source simplifying a display assembling process when used as an electron source of a display. SOLUTION: A strong electric field drift layer 6 is composed of a plurality of drift parts 6a formed of oxidized porous polycrystal silicon layers formed at the intersecting parts of lower electrodes 12a and surface electrodes 7, and separation parts 6b formed of polycrystal silicon layers which fill the spaces between the drift parts 6a. A ceramic board is used as an insulating board 11. The ceramic board is integrally formed with lower electrodes 12a and reinforcing spacers 11b projected in the thickness direction of the insulating board 11 from one surface so as to maintain the distance relative to a face plate 30 opposedly arranged with a space on one surface side of the insulating board 11, to a specified distance. Each reinforcing spacer 11b is formed in an orthogonal direction to the lower electrode 12a and projected to the face plate 30 side in the form of dividing the separation parts 6b of the strong electric field drift layer 6.
摘要翻译：要解决的问题：提供当用作显示器的电子源时简化显示组装过程的场致发射型电子源。解决方案：强电场漂移层6由形成在下电极12a和表面电极7的交叉部分处的氧化多孔多晶硅层形成的多个漂移部分6a和多晶硅层形成的分离部分6b组成，漂移部分6a之间的空间。陶瓷板用作绝缘板11.陶瓷板与从绝缘板11的厚度方向突出的下电极12a和加强间隔件11b一体地形成，从而保持与面板30的距离在绝缘板11的一个表面侧上相对设置一定距离的空间。每个加强间隔件11b形成在与下电极12a正交的方向上，并且以划分强电场漂移层6的分离部分6b的形式突出到面板30侧。

72. 发明专利

JP2003016930A Method of manufacturing field emission type electron source 审中-公开
标题翻译：制造场发射型电子源的方法
公开(公告)号：JP2003016930A
公开(公告)日：2003-01-17
申请号：JP2002122331
申请日：2002-04-24
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a field emission type electron source of high reliability. SOLUTION: A polycrystal silicon layer 3 is formed on a conductive layer 12 constituting a part of a conductive substrate, and then a part of the polycrystal silicon layer is made porous by anodization to form a porous polycrystal silicon layer 4'. The porous polycrystal silicon layer 4' is then annealed in inert gas, and the porous polycrystal silicon layer 4 after annealing is electrochemically oxidized to form a strong electric field drift layer 6'. The strong electric field drift layer 6' is then annealed in inert gas, and a surface electrode 7 is formed on the strong electric field drift layer 6 after annealed.
摘要翻译：要解决的问题：提供一种高可靠性的场致发射型电子源的制造方法。解决方案：在构成导电性基板的一部分的导体层12上形成多晶硅层3，然后通过阳极氧化使多晶硅层的一部分多孔化，形成多孔多晶硅层4'。然后将多孔多晶硅层4'在惰性气体中退火，退火后的多孔多晶硅层4进行电化学氧化，形成强电场漂移层6'。然后将强电场漂移层6'在惰性气体中退火，退火后在强电场漂移层6上形成表面电极7。

73. 发明专利

JP2003013285A Method and apparatus for anodic oxidation, field emission type electron source, and memory element 有权
标题翻译：用于阳极氧化的方法和装置，场发射型电子源和存储元件
公开(公告)号：JP2003013285A
公开(公告)日：2003-01-15
申请号：JP2001192573
申请日：2001-06-26
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , BABA TORU
IPC分类号： C25D11/32 , H01J1/312 , H01J29/04 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide an anodic oxidation method for controlling a size and distribution of semiconductor microcrystals, and an anodic oxidation apparatus. SOLUTION: The apparatus for anodic oxidation comprises a light source 44 for irradiating the main surface of an article C to be treated with light, on which a polycrystal silicon layer 3 is formed, a filtering device 45 arranged between the light source 44 and the article C to be treated, for changing a wavelength of transmitting light, and a wavelength control device 46 for controlling the wavelength of the light transmitting through the filtering device 45. The light source 44 is characterized by irradiating the main surface of the article C to be treated with the light transmitted through the filtering device 45, when performing the anodic oxidation. The wavelength control device 46 is characterized by controlling the wavelength of light, with which the article C to be treated is irradiated through the filtering device 45, so as to form many continually connected silicon microcrystals. The filtering device 45 employs a variable-wavelength filter.
摘要翻译：要解决的问题：提供用于控制半导体微晶的尺寸和分布的阳极氧化方法以及阳极氧化装置。解决方案：阳极氧化装置包括用于照射待处理物品C的主表面的光源44，其上形成有多晶硅层3的光被布置在光源44和物品之间的过滤装置45 要被处理的光，用于改变发射光的波长;以及波长控制装置46，用于控制透过滤光装置45的光的波长。光源44的特征在于将物品C的主表面照射成在进行阳极氧化时用透过过滤装置45的光进行处理。波长控制装置46的特征在于控制通过过滤装置45照射经处理的物品C的光的波长，以形成许多连续连接的硅微晶。过滤装置45采用可变波长滤波器。

74. 发明专利

JP2003005698A Method of driving matrix electron-source 审中-公开
标题翻译：驱动矩阵电子源的方法
公开(公告)号：JP2003005698A
公开(公告)日：2003-01-08
申请号：JP2001192119
申请日：2001-06-26
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： WATABE YOSHIFUMI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU
IPC分类号： H01J1/312 , G09G3/20 , G09G3/22 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a method of driving a matrix electron-source, capable of obtaining an image, in which there is little blur, when driving the matrix electron-source used in an image display device. SOLUTION: A driving circuit driving a matrix electron-source controls potentials of row selection electrodes X1, X2, X3, and X4, and potentials of column selection electrodes Y1, Y2, Y3, and Y4 as shown in Fig. 1 (a) to (h). Assuming that the potential of a surface electrode (row selection electrode) is VXH when it is selected, but VXL when it is not selected, and the potential of a lower electrode (column selection electrode) is VYH when it is not selected, but VYL when it is selected, the potentials VXH, VXL, VYH, and VYL are set so that VXH>VXL and VYH>VYL. The driving circuit controls potentials of the column selection electrodes Y1 to Y4 so that they become VYL for a certain time in order of line, and controls potentials of the row selection electrodes X1 to X4 so that potentials of only row selection electrodes corresponding to sub-pixels to be lit become VXH.
摘要翻译：要解决的问题：为了提供一种驱动矩阵电子源的方法，当驱动图像显示装置中使用的矩阵电子源时，能够获得少量模糊的图像。解决方案：驱动矩阵电子源的驱动电路控制行选择电极X1，X2，X3和X4的电位以及列选择电极Y1，Y2，Y3和Y4的电位，如图3所示。 1（a）至（h）。假设当选择表面电极（行选择电极）的电位为VXH，而当未选择时为VXH，当未选择时为VXL，并且当未选择时，下电极（列选择电极）的电位为VYH，而VYL 当选择时，电位VXH，VXL，VYH和VYL被设置为使得VXH> VXL和VYH> VYL。驱动电路控制列选择电极Y1至Y4的电位，使得它们以线为单位变为VYL一定时间，并且控制行选择电极X1至X4的电位，使得仅对应于子选择电极的行选择电极的电位，要点亮的像素变成VXH。

75. 发明专利

JP2002373575A Manufacturing method of electric field-emission electron source, electric field-emission electron source 有权
标题翻译：电场发射电子源，电场发射电子源的制造方法
公开(公告)号：JP2002373575A
公开(公告)日：2002-12-26
申请号：JP2001181565
申请日：2001-06-15
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , BABA TORU
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electric field-emission electron source wherein enhancement of insulation voltage resistance, life-elongation and area enlargement area easy. SOLUTION: In an anodization process, a treatment tank 41 containing an electrolytic solution B is utilized. Temperature and concentration of the electrolytic solution B in the treatment tank 41 are managed by an electrolytic solution management device 46. The electrolytic solution management device 46 is provided with a control tank wherein the electrolytic solution B of the treatment tank 41 is introduced through an electrolytic solution discharge duct 44, adjusted so that the temperature and concentration of the electrolytic solution B is respectively retained at a prescribed value and the solution is delivered into the treatment tank 41 through an electrolytic solution delivery pipe 45. A rotating wing 42 driven by a driving device 43 is installed in the treatment tank 41, and the electrolytic solution B is stirred. A stirring device and the electrolytic solution management device 46 constituted of the rotating wing 42 and the driving device 43 are constituting a management means to manage the concentration of the electrolytic solution B in the treatment tank 41 so that realization of a high porosity progresses at the same rate in the inside of a face of a poly-crystal silicon layer as a semiconductor layer.
摘要翻译：要解决的问题：提供一种电场发射电子源的制造方法，其中绝缘耐电压，寿命延长和面积扩大区域的提高容易。解决方案：在阳极氧化处理中，使用含有电解液B的处理槽41。处理槽41中的电解液B的温度和浓度由电解液管理装置46管理。电解液管理装置46设有控制箱，其中处理槽41的电解液B通过电解液溶液排出管44被调整为使得电解液B的温度和浓度分别保持在规定值，并且溶液通过电解溶液输送管45输送到处理槽41中。由驱动驱动的旋转翼42 装置43安装在处理槽41中，电解液B被搅拌。由旋转翼42和驱动装置43构成的搅拌装置和电解液管理装置46构成管理处理槽41中的电解液B的浓度的管理手段，使得高孔隙率的实现在在作为半导体层的多晶硅层的表面的内部具有相同的速率。

76. 发明专利

JP2002150940A INSPECTION METHOD FOR FIELD EMISSION ELECTRON SOURCE, AND ITS INSPECTION DEVICE 失效
公开(公告)号：JP2002150940A
公开(公告)日：2002-05-24
申请号：JP2000344302
申请日：2000-11-10
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： H01J9/42 , G01N21/63 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide an inspection method of a field emission electron source that makes easily the judgment of the quality of the field emission electron source and an inspection device of the field emission electron source that is easily capable of judgement of its quality. SOLUTION: In the case of a good quality item having a large emission current, when a strong field drift layer is excited by He-Cd laser at room temperature, an emission spectrum as shown (lambda shaped mark) in 'A' of the figure (a) is obtained, and when the strong field drift layer is excited by an argon ion laser, an emission spectrum as shown in 'A' of the figure (b) is obtained. In the case of a defective item having a small emission current, even if a strong field drift layer is excited by a He-Cd laser at the room temperature, there is no light emission as shown in 'A' of the figure (c), and when the strong field drift layer is excited by the argon ion laser, an emission spectrum as shown in 'A' of the figure (d) is obtained. With the He-Cd laser, the shallow region of the strong field drift layer is excited, and with argon ion laser, a deeper region is excited.

77. 发明专利

JP2001189123A FIELD-EMISSION-TYPE ELECTRON SOURCE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001189123A
公开(公告)日：2001-07-10
申请号：JP2000316987
申请日：2000-10-17
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： WATABE YOSHIFUMI , KONDO YUKIHIRO , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU
IPC分类号： H01J9/02 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field-emission-type electron source that has high electron- emission efficiency. SOLUTION: Between n-type regions 8a formed on the main surface of a p-type silicon substrate 16 and a surface electrodes 7 comprising a conductive film, drift parts 6a that are semiconductor layers are arranged. The drift part 6a has a region made porous by anode oxidation treatment, and the thickness of the porous region is set in the range not exceeding 2μm. When voltage is applied between the m-type regions 8a and the surface electrode 7 by placing the surface electrode 7 on the high-potential side, by the electric field acting on the drift parts 6a, electrons injected from the n-type regions 8a drift in the drift parts 6a and are emitted through the surface electrode 7. In the case, due to the small thickness of the porous region, the probability of tunnel effect in the porous region is improved, scattering of electrons is reduced, and the amount of electrons emitted through the surface electrode 7 increases.

78. 发明专利

JP2001118498A ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR FABRICATING IT 失效
公开(公告)号：JP2001118498A
公开(公告)日：2001-04-27
申请号：JP29594899
申请日：1999-10-18
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HATAI TAKASHI , KOMODA TAKUYA , AIZAWA KOICHI
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method for fabricating an electric field radiation electron source with high insulating internal pressure that the aging change of the electron emission efficiency is less. SOLUTION: A strong electric field drift layer 6 made of an oxidized porous polycrystalline silicon layer is deposited on the main surface of a conductive n-type silicon substrate 1, having a surface electrode 7 formed thereon. An ohmic electrode 2 is formed in the inside of the n-type silicon substrate 1. The drift layer 6 has an oxide layer of a dense SiO2 structure or a structure near to it obtained by heat-treating the porous polycrystalline silicon layer 4 formed by oxidizing the polycrystalline silicon layer 3 with the anode. Thus, the amount of hydrogen entering the drift layer 6 becomes less to prevent degradation of the electron emission efficiency caused by the aging change of the hydrogen distribution as well as enhancing the withstand voltage because of the dense oxide layer.

79. 发明专利

JP2001101967A FIELD EMISSION TYPE ELECTRON SOURCE 失效
公开(公告)号：JP2001101967A
公开(公告)日：2001-04-13
申请号：JP2000226059
申请日：2000-07-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI
IPC分类号： H01J9/02 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a low cost field emission electron source with excellent time stability. SOLUTION: Oxidized porous polycrystalline silicon is mounted on the main surface of an n-type silicon substrate, which is a conductive substrate, to give a strong electrostatic drift region 6 and a surface electrode 7 is formed on the strong electrostatic drift region 6. The electrons injected in the strong electrostatic drift region 6 and originated from the n-type silicon substrate are drifted in a strong electrostatic drift region 6 toward surface and are tunneled through the surface electrode 7 to be emitted. The surface electrode 7 is formed with two-layered thin-film electrode layers 7b and 7a, the top thin-film electrode layer 7a shows lower state density around energy of emitted electron, the bottom thin-film electrode layer 7b shows lower state density around energy of emitted electron and a good adherence property to the strong electrostatic drift region 6. The thin-film electrode layer 7b also has a function to inhibit a scattering from the thin-film electrode layer 7a to the strong electrostatic drift region 6.

80. 发明专利

JP2001035356A FIELD EMISSION TYPE ELECTRON SOURCE AND MANUFACTURE THEREOF, AND DISPLAY DEVICE 失效
公开(公告)号：JP2001035356A
公开(公告)日：2001-02-09
申请号：JP21145499
申请日：1999-07-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KONDO YUKIHIRO , WATABE YOSHIFUMI , HATAI TAKASHI , HONDA YOSHIAKI , ICHIHARA TSUTOMU , AIZAWA KOICHI , KOMODA TAKUYA
IPC分类号： H01J9/02 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a low-cost field emission type electron source capable of emitting electrons in plural directions and increasing the electron emitting area. SOLUTION: This field emission type electron source is provided with a p-type silicon substrate 1 as a conductive substrate, a n+ diffusion layer 8 formed in stripe on the main surface side of the p-type silicone substrate 1, a strong field drift layer 6 formed on the n+ diffusion layer 8, an oxidized polycrystalline silicon layer 4 formed between the strong field drift layers 6, and a surface electrode 7 formed in stripe in the direction crossing the n- diffusion layer 8 and formed of a conductive thin film formed so as to ride over the strong field drift later 6 and the polycrystalline silicon layer 4. In where a surface crossing the thickness direction of the p-type silicon substrate 1 is considered as a virtual surface, each strong field drift layer 6 has inclined drift parts 6a, 6b, respectively having an interface between the surface electrode 7 and inclined at different angles of inclination in relation to the virtual surface.

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