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71. 发明专利

JPS5522844A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS5522844A
公开(公告)日：1980-02-18
申请号：JP9566878
申请日：1978-08-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAWA IKUYUKI , TSUKADA NORIAKI , NAMISAKI HIROBUMI
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042
摘要： PURPOSE:To obtain a semiconductor laser with a dual function of a light source and light detector having a simplified construction by utilizing a part of the semiconductor laser for the light detector. CONSTITUTION:The electrode, formed a laser chip, is diveded by insulation layers 18 and 19 after being isolated electrically, and one of the members divided is used for electrodes 14 and 15 for injection excitation and others, electrodes 17 and 16 for light detection use. When the current is applied from the electrodes 14 and 15, an active region wherein electron and hole are existed is generated in pn-junction face 13, photon is radiated, and laser radiation is caused by utilizing the both end face of a chip when the gain on the light path may be exceed the loss thereof. Electron is not injected from the electrodes 16 and 17, pn-junction face 13 serves as a light receiving detector, and the laser power monitor output can be obtained. By such a process, because the laser and light detector are made up to one element, the device can be constructed in a simple and miniature size and be manufactured at a low cost.

72. 发明专利

JPS5434794A COHERENT EXCITING METHOD BY NONNRESONANCE LIGHT 失效
公开(公告)号：JPS5434794A
公开(公告)日：1979-03-14
申请号：JP10183477
申请日：1977-08-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI
IPC分类号： H01S3/092 , H01S3/094 , H01S3/223
摘要： PURPOSE:To reach a perfect excitation state without applying an external resonance field by exercising excitation among specific energy levels among ions, atoms or molecules by making several non-resonance-light pulses on ions, atoms or molecules sequentially in terms of time.

73. 发明专利

JPS5417041A REFRACTIVE INDEX DISTRIBUTION TYPE LENS AND PRODUCTION THEREOF 失效
公开(公告)号：JPS5417041A
公开(公告)日：1979-02-08
申请号：JP8163377
申请日：1977-07-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： ENMANJI KIMIE , TAKAHASHI KENZOU , KUSAKAWA HIDEAKI , TSUKADA NORIAKI , UCHIUMI YOSHIKAZU
IPC分类号： G02B9/00 , G02B3/00
摘要： PURPOSE:To remarkably increase the binding efficiency between a semicondcuctor laser acting as a light emittin element and a light transmitting passage by using a refractive index distribution type lens which has an oval cross-section and different refractive index distributions between the longer and shorter axes.

74. 发明专利

JPS5364532A PHOTO ATTENUATOR 失效
公开(公告)号：JPS5364532A
公开(公告)日：1978-06-09
申请号：JP14005976
申请日：1976-11-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUI TERUJI , TSUKADA NORIAKI
IPC分类号： G02B6/00
摘要： PURPOSE:To attenuate the light power of a photo transmission path continuously without using any polarizing plate and without any transmission insertion loss by mounting refractive index distribution type lenses to the ends of incident side and exit side optical fibers, providing a diaphragm between both lenses and adjusting the opening of the diaphragm.

75. 发明专利

JPS5345249A LIGHT TRANSMITTING DEVICE 失效
公开(公告)号：JPS5345249A
公开(公告)日：1978-04-22
申请号：JP11972576
申请日：1976-10-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAYAMA TAKASHI , TSUKADA NORIAKI , MATSUI TERUJI
IPC分类号： G02B6/28
摘要： PURPOSE:To transmit the optical signal in two direction with the use of a single transmitting path by branching the path with the use of a light distributor.

76. 发明专利

JPH06260698A ELECTRON-WAVE ELEMENT 失效
公开(公告)号：JPH06260698A
公开(公告)日：1994-09-16
申请号：JP4255093
申请日：1993-03-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , TOKUDA YASUKI , KANEMOTO KYOZO , ABE YUJI
IPC分类号： H01L49/00 , H01L29/66 , H03K17/51
摘要： PURPOSE:To turn ON and OFF a current by a magnetic field generated by a control current flowing to a control wire by providing a region in which electrons can freely move between a plurality of electron channels of an input side and a plurality of electron channels of an output side. CONSTITUTION:A magnetic field E exists on an input side electron channel 3a part in a perpendicular direction to an output side electron channel 3b part. Electrons emitted from a two-dimensional electron surface from the electron channel of the input side are moved in a cyclotron motion in this region, locuses a0-a3 are formed by an intensity of the field, and introduced into a region between output side electron channels. When the field is gradually increased from zero, in the case where a current flowing between electrodes 4 and 5 has a specific intensity of a magnetic field, electrons are introduced into a specific output side channel, and a large current flows. In the case where the current has an intermediate intensity of a magnetic field, the electrons are disordered in an insulating region 2, and a current is reduced. Thus, ON, OFF of the current can be provided by applying the magnetic fields corresponding to a peak and trough of the current.

77. 发明专利

JPH03200228A PHOTOELECTRONIC FUNCTION ELEMENT 失效
公开(公告)号：JPH03200228A
公开(公告)日：1991-09-02
申请号：JP34276189
申请日：1989-12-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , TOKUDA YASUKI , KANEMOTO KYOZO
IPC分类号： G01J9/00 , G02F3/02 , H01L27/15 , H01L31/14
摘要： PURPOSE:To form the photoelectronic function element which uses even the wavelength of light in addition to the intensity of light as information quantity by providing a diffraction grating structure which allows the transmission of a part of white light or the light over a wide wavelength range on element, the transmitted light of which exhibits bistability to the wavelength of light. CONSTITUTION:The p-i-n structure of the lower layer constituted of an Al GaAs/GaAs quantum well absorption layer 1, an undoped AlGaAs layer 2, a p-type AlGaAs layer 3 and an n-type AlGaAs lyer 4 constitutes the element 10, the transmitted light of which exhibits the bistability to the wavelength of incident light when a negative resistor R1 and a power source V1 are connected as an external circuit to this structure. The optical diffraction grating 11 consisting of a semiconducor laminated structure is formed by the same crystal growth process atop the element 10 exhibiting the optical bistability to the wavelength. Thus, the optical bistability to the white light or the light of the wide wavelength range is obtd. Thus, the photoelectonic function element which can use the wavelength of the light as the information quantity is obtd.

78. 发明专利

JPH0394128A PHOTODETECTION 失效
公开(公告)号：JPH0394128A
公开(公告)日：1991-04-18
申请号：JP23221189
申请日：1989-09-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUDA YASUKI , TSUKADA NORIAKI
IPC分类号： G01J1/02 , G01J1/44 , G01J3/02 , H01L31/10
摘要： PURPOSE:To enhance a resolving power and to allow the selective detection of only the certain wavelength region and the electrical control of a wavelength width by executing photodetection by using steep absorption edges and the high-sensitivity response region pinched by these edges. CONSTITUTION:An element is constituted of GaAs quantum well layers 1, 2, an AlAs layer 3, an undoped AlGaAs layer 4, a p type AlGaAs layer 5, an (n) type AlGaAs layer 6, an (n) type GaAs substrate 7, and an electrode 8. A resistor 9 and a source voltage 10 are connected to this element. A photocurrent flows according to absorption characteristics when light falls onto the element. The photocurrent spectra indicate two stable states and the central high-sensitivity current response region is in the form of being enclosed with a bistable wavelength region on both sides. Since the photodetection is executed by using the steep absorption edges and the high-sensitivity response region pinched by these edges, the resolving power is extremely high and the selective detection of only the certain wavelength region is possible.

79. 发明专利

JPH02283695A METHOD FOR GROWING CRYSTAL WITH MOLECULAR BEAM 失效
公开(公告)号：JPH02283695A
公开(公告)日：1990-11-21
申请号：JP10650089
申请日：1989-04-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANEMOTO KYOZO , TSUKADA NORIAKI
IPC分类号： C30B23/08 , H01L21/203
摘要： PURPOSE:To prepare a high quality crystal-growing film preventing the contamination of impurities in the crystal, the generation of defects, etc., by employing a finely inclined surface having a specific angle from the low index surface of a substrate as the crystallizing surface of the substrate used for the growth of the crystal. CONSTITUTION:When a crystal film is formed on a substrate by a molecular beam crystal-growing method, a finely inclined surface is employed as the crystal surface of the substrate. Such an angle that a distance between the molecule steps of the surface substantially coincides with a length integer times larger the period of the long one among the surface reconstitution patterns in the growing crystal is selected as an inclination angle from the low index surface, thereby permitting to give an order to the step distance, reading realize such a growing mode as flowing the step transversely, suppress the contamination of impurities in the crystal and the generation of defects, etc., and further improve the morphology of the surface for the high quality of the crystal.

80. 发明专利

JPH02119289A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH02119289A
公开(公告)日：1990-05-07
申请号：JP27384888
申请日：1988-10-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUDA YASUKI , TSUKADA NORIAKI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183
摘要： PURPOSE:To improve injection efficiency of a current by providing a quantum fine line of an active layer in a direction which does not intersect at right angles to a laser end face and by injecting a holes and electrons from both ends thereof. CONSTITUTION:A quantum fine line 8 is provided to an active layer 21 between undoped clad layers 22, 23 on a semiconductor insulating substrate 24 in parallel to a laser end face. Holes and electrons injected from electrodes 25, 26 pass through diffusion regions 27, 28 and are injected in the active layer 21. Because of a long distance of micron order between the diffusion regions 27, 28, injected carriers fall into the quantum fine line 8 effectively and recombination is made, thereby reducing carrier which is recombined at an isolation region 9. Injection efficiency of a current can be improved in this way.

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