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71. 发明专利

JPH01243422A ARBITRARY FIGURE EXPOSING METHOD 失效
公开(公告)号：JPH01243422A
公开(公告)日：1989-09-28
申请号：JP6935588
申请日：1988-03-25
申请人： HITACHI LTD
发明人： MATSUZAKA TAKASHI , OKAZAKI SHINJI
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To enable the exposure of high precision, by detecting a position by using an electron beam obtained by irradiating small hole having a known position relation with the position of an origin. CONSTITUTION:On an aperture 5 on which an opening 5 of arbitrary shape is arranged, a small hole 1 is formed so as to have previously a relative relation. Position detection on a sample is performed by using an electron beam passing through the small hole 1, and, from the results, the irradiation origin 4 of an image of the opening 5 of arbitrary shape (a) is obtained. That is, an electron beam 9 is deflected, a small beam like an electron beam 9' is formed, position detection is performed, thereby enabling the detection of the displacement between a prearranged irradiation position and an irradiation origin 4. From the detected results, the position correction of a rectangular beam on the sample surface is enabled. Further, since the small hole 1 can be irradiated independently of the opening 5 of arbitrary shaped, undesired figure can be prevented from being exposed. Thereby image drawing of high precision can be realized.

72. 发明专利

JPS62140415A SUPPORT MECHANISM OF STANDARD MARK FOR ELECTRON BEAM EXPOSURE DEVICE 失效
公开(公告)号：JPS62140415A
公开(公告)日：1987-06-24
申请号：JP28091685
申请日：1985-12-16
申请人： HITACHI LTD
发明人： MATSUZAKA TAKASHI , SAITO NORIO , IWASAKI TERUO
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To set a standard mark simply with high precision by forming a reference plane specifying the parallelism of the standard mark and a reflecting mirror on the back of the reflecting mirror. CONSTITUTION:A reflecting mirror 1 for measuring a position is fitted onto a sample stage 8, and the position is measured by laser beams 9. A standard mark 4 is shaped between the reflecting mirror 1 and an exposure-sample holding mechanism 7. A reference plane 3 processed with excellent parallelism to a reflecting surface 2 is formed to the reflecting mirror 1, and the reference plane 3 and a reference plane 5 for the standard mark 4 are conformed. flatness of approximately 10mu rad of the reflecting surface 2 and parallelism of 1mrad or less of the reference plane 3 are easily shaped normally. Accordingly, the parallelism of the standard mark 4 and the reflecting surface 2 can simply be set with high precision.

73. 发明专利

JPS6244943A DYNAMIC FOCUS CORRECTING DEVICE FOR ELECTRON BEAM EXPOSURE APPARATUS 失效
公开(公告)号：JPS6244943A
公开(公告)日：1987-02-26
申请号：JP18307885
申请日：1985-08-22
申请人： HITACHI LTD
发明人： OKUMURA MASAHIDE , MATSUZAKA TAKASHI , MATSUOKA GENYA , SAITO NORIO
IPC分类号： H01L21/30 , H01J37/141 , H01J37/153 , H01J37/21 , H01J37/304 , H01L21/027
摘要： PURPOSE:To eliminate waiting time of exposure and to improve the through-put by providing a circuit for controlling the objective lens current to cancel the current fluctuation to be induced in the objective lens through coil current of dynamic focus correction lens. CONSTITUTION:The output from D/A converter 10 is the referential voltage of operational amplifier 11 having dynamic focus correcting coil to control the current of dynamic focus correction coil together with the current detection resistor 12. Voltage produced across said resistor 12 with correspondence to current fluctuation is differentiated through a resistor 13 and a capacitor 14 to produce such waveform as shown on Fig. b. The differentiated waveform is applied to adder/amplifier 16 to vary the current in the objective lens coil 3 as shown on Fig. c. When there is no differentiating circuit, the current in the objective lens coil 3 will vary as shown on Fig. b, and when applying a differentiated waveform having regulated amplitude and time constant, they are canceled to cause no variation of the objective lens coil current. In other word, variation of dynamic focus coil current will never cause disturbance of constant magnetic field to be formed through the object lens.

74. 发明专利

JPS6127856B2 JPS6127856B2 - 失效
公开(公告)号：JPS6127856B2
公开(公告)日：1986-06-27
申请号：JP6896980
申请日：1980-05-26
申请人： Hitachi Ltd
发明人： MATSUZAKA TAKASHI , TODOKORO HIDEO
IPC分类号： H01J37/22 , H01J37/244 , H01J37/26 , H01J37/28
CPC分类号： H01J37/28

75. 发明专利

JPS6070387A APPARATUS FOR MEASURING DIMENSION OF ELECTRON BEAM IN ELECTRON BEAM EXPOSURE APPARATUS 失效
公开(公告)号：JPS6070387A
公开(公告)日：1985-04-22
申请号：JP17800683
申请日：1983-09-28
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUZAKA TAKASHI , SAITOU NORIO , OOKUBO TSUNEO
IPC分类号： H01J37/04 , G01B15/00 , G01T1/29 , H01J37/305 , H01L21/027
摘要： PURPOSE:To make it possible to measure the dimension of electron beam without lowering S/N of a signal, by linearily approximating the intensity distribution of electron beam to calculate the dimension thereof. CONSTITUTION:Electron beam 10 having a rectangular cross-sectional area is scanned in an x-direction and a y-direction on metal wires 1x, 1y by a polarizer 30 and a scanning power source 31. This beam passes a throttle 11 and is detected by a detector 12 while detection output is accumulated in a memory 33 through an amplifier 13 and an A/D converter 32 and, thereafter, taken in an operation circuit 34 to calculate an approximate straight line equation, wherein the address on the memory 33 is set to a variable and a data value to a dependent variable, to calculate the address of the memory 33. The dimension of electron beam is calculated from the width of said address and supplied to an external display apparatus 36 through memory 35.

76. 发明专利

JPS5922326A Electron beam exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：JPS5922326A
公开(公告)日：1984-02-04
申请号：JP13147682
申请日：1982-07-28
申请人： Hitachi Ltd
发明人： SAITOU NORIO , OZASA SUSUMU , MATSUZAKA TAKASHI
IPC分类号： G03F7/20 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/141 , H01J37/30 , H01J37/3007 , H01J37/3174 , H01J2237/1505 , H01J2237/152 , H01J2237/30472 , H01J2237/31776 , H01L21/30
摘要： PURPOSE: To enable to adjust easily the direction of the forming beam without damaging uniformity of current density at the variably forming electron beam exposure device by a method wherein an electron beam rotation adjusting solenoid coil is arranged between a mask and an electron lens on the final stage.
CONSTITUTION: The solenoid coil 12 is provided in space between the forming aperture 3 and the reducing lens 8. When the solenoid coil 12 is arranged in space between the aperture 3 and the lens 8, and excitation of the coil 12 is increased, the rotating angle of the rectangular beam is increased, and when the exciting direction is reversed, the rotating direction of the rectangular beam is reversed. When control of excitation of the coil 12 is made to performable by a controller the same with control of other lenses, an operator can operate the device easily.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：为了能够容易地调整成形梁的方向，而不损害可变形式的电子束曝光装置的电流密度的均匀性，其中电子束旋转调节螺线管线圈布置在掩模和电子透镜之间的最终阶段。构成：螺线管线圈12设置在成形孔3和还原透镜8之间的空间中。当螺线管线圈12布置在孔3和透镜8之间的空间中时，线圈12的激励增加，旋转矩形光束的角度增加，当激发方向反转时，矩形光束的旋转方向相反。当通过控制器使线圈12的激励控制与其他透镜的控制相同时，操作者可以容易地操作该装置。

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