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71. 发明专利

JPH1187651A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JPH1187651A
公开(公告)日：1999-03-30
申请号：JP24232997
申请日：1997-09-08
申请人： HITACHI LTD
发明人： IIJIMA SHINPEI , KUSHIDA KEIKO , SUGAWARA YASUHIRO , KANAI MISUZU
IPC分类号： H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To increase a storage electric charge amount of an information storage capacity element. SOLUTION: A capacitor C for information starage comprises a lower part electrode 27, a capacity insulating film 28 and a plate electrode 29, while the lower part electrode 27 comprises a blocking layer 27a, a lower part conductive layer 27b, and a pillar part 27c. The lower part conductive layer 27b is an amorphous iridium oxide, formed under a relatively low pressure (5mTorr) by a reaction spattering method with iridium as a target, while a mixed gas of argon and oxygen (1:1) as a raw material, and the pillar part 27c is a crystalline iridium formed under a relatively high pressure (20mTorr) by the same reactive sputtering method as above and selectively grown with a main orientation plane as plane (101). In the capacity insulating film 28, a tantalium oxide film formed by CVD method is heat treated in an oxygen atmosphere at 800 deg.C for 3 minutes for crystallization.

72. 发明专利

JPH1187493A FABRICATION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1187493A
公开(公告)日：1999-03-30
申请号：JP24234897
申请日：1997-09-08
申请人： HITACHI LTD
发明人： MINE TOSHIYUKI , IIJIMA SHINPEI , GOTO YASUSHI
IPC分类号： H01L23/522 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a multilayer wiring easily at high yield by forming a forming a metal conductor film on a substrate including an organic film formed in a desired pattern such that a desired part of the conductor film constitutes a part of the interconnection. SOLUTION: A lowermost layer of polyimide resin (PIQ) film 207 is formed on a substrate 201 and TiN film 208 is deposited thereon as an intermediate layer and after an uppermost layer of resist is formed thereon, the TiN film 208 of intermediate layer is machined using a resist pattern as a mask. The PIQ film 207 of the lowermost layer is then etched and the pattern thereof is transferred. Subsequently, TiN film 211 is deposited on the pattern of the TiN film 208 and PIQ film 207 and the TiN film 208, 211 on the PIQ film 207 is etched back over the entire surface to expose the surface of the PIQ film 207 and tungsten is deposited thereon. Finally, it is machined into a desired shape thus forming a wiring 212.

73. 发明专利

JPH10223863A INTEGRATED CIRCUIT CAPACITOR 失效
公开(公告)号：JPH10223863A
公开(公告)日：1998-08-21
申请号：JP2128398
申请日：1998-02-02
申请人： TEXAS INSTRUMENTS INC , HITACHI LTD
发明人： TSU ROBERT , ASANO ISAMU , IIJIMA SHINPEI , MCKEE WILLIAM R
IPC分类号： H01L27/108 , H01L21/02 , H01L21/285 , H01L21/60 , H01L21/8242
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit capacitor equipped with a self-aligned electrode excellent in resistance to oxidation and possessed of a large work function. SOLUTION: The formation of an capacitor starts with a base electrode 18 located adjacent to an insulations region 26. The base electrode 18 is formed of either polysilicon or metal. A first member layer 28 of metal silicide or the like is formed on the base electrode 18 and the adjacent insulating region 26. Thereafter, a self-aligned capacitor electrode 12 is formed through such a manner that the base electrode 18 and the first member layer 28 are made to react on each other, and an unreacted part of the first member 28 is removed from the insulator region 26. Then, a dielectric layer 16 is formed on the self- aligned capacitor electrode 12, a second electrode 14 is formed on the dielectric layer 16, and thus a capacitor is finished.

74. 发明专利

JPH08213379A THIN FILM STACK FORMING METHOD AND THIN FILM FORMING EQUIPMENT 失效
公开(公告)号：JPH08213379A
公开(公告)日：1996-08-20
申请号：JP28014595
申请日：1995-10-27
申请人： HITACHI LTD
发明人： OYU SHIZUNORI , KASHU NOBUYOSHI , IIJIMA SHINPEI , WADA YASUO
IPC分类号： H01L21/205 , H01L21/31 , H01L21/316 , H01L21/318
摘要： PURPOSE: To easily form thin film excellent in characteristics with high controllability, and prevent strain and damage to a reaction vessel, by making the degree of vacuum in a lamp house equal to that of the inside of a thermal reaction vessel, forming a first film by setting a specimen in a first atmosphere at a first temperature, and treating the specimen by second order in a second atmosphere at a second temperature. CONSTITUTION: A vacuum exhaust control part 19 is installed in order to make the degree of vacuum in a reaction vessel 9 equal to that of the inside of a lamp house 15. The temperature of a specimen 8 is monitored by using a pyrometer 20, and kept at a specific value by controlling the input of a lamp 13. A gas control part 34 can assign a plurality of gas seeds whose flow rate is controlled to 100 reaction gas introducing cylinders 11 installed in the reaction vessel 9, in order that a uniform thin film may be formed on the specimen 8 surface. In the reaction vessel 9, a film is formed in a first atmosphere at a controlled first temperature, and then the specimen treatment is performed in a second atmosphere by controlling the temperature to be a second temperature in second order.

75. 发明专利

JPH07106322A FILM FORMING EQUIPMENT AND FORMING METHOD 失效
公开(公告)号：JPH07106322A
公开(公告)日：1995-04-21
申请号：JP24907493
申请日：1993-10-05
申请人： HITACHI LTD
发明人： IIJIMA SHINPEI , SUGAWARA YASUHIRO
IPC分类号： H01L27/04 , H01L21/31 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To obtain a TaO film wherein generation of foreign matter and decrease of film thickness reproducibility are prevented and composition is constant from the initial film formation, by eliminating a low temperature region in the whole region until Ta source reaches a substrate to be processed, and preventing the Ta source itself from being adsorbed and liqufied. CONSTITUTION:The bypass piping 510 of Ta source is vacuumized by a vacuum pump 511 installed differently from a pump for vacuumizing a reaction pipe. Oxygen supplied as oxidizing agent is connected with a furnace port seal part door 505 by a heat piping 508 through a detachable joint 507. A boat convey mechanism 501 is not installed on gas supply side but on vacuum exhaust system side. The vacuum exhaust system is accommodated in an exhaust box or the like, and the influence of dust generated from a pump can be evaded. A gas detector 513 is installed in a furnace depth seal part via a valve 512. In the state of atmospheric pressure before a door is opened, the valve 512 is opened, and whether the residual component of Ta source is present can be detected.

76. 发明专利

JPH05145069A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05145069A
公开(公告)日：1993-06-11
申请号：JP30882891
申请日：1991-11-25
申请人： HITACHI LTD
发明人： SUGAWARA YASUHIRO , IIJIMA SHINPEI , YOSHIGAMI JIRO
IPC分类号： H01L21/316 , H01L21/318 , H01L21/76 , H01L29/78
摘要： PURPOSE:To provide a gate insulating film without developing such defects as the deterioration in insulation breakdown strength and the increase in defective density even if the film is effectively thinned down as well as a trench type element isolation method using a buried material imposing light stress without being substantially etched away even if exposed in a chemical. CONSTITUTION:A layer insulating film 210 is composed of an SiO2, in extremely thin thickness of 2-4nm formed by thermal oxidizing process whereon Si oxide nitride film 208 comprising Si, O, N is laminated by CVD process. Furthermore, the N content in the Si oxide.nitride film 208 shall be within the range of N content of 4-20% in the film 210 while the Si oxide.nitride film 208 is to be used for the trench buried insulating material in the trench type element isolation process.

77. 发明专利

JPH05144934A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05144934A
公开(公告)日：1993-06-11
申请号：JP30883091
申请日：1991-11-25
申请人： HITACHI LTD
发明人： IIJIMA SHINPEI , HONMA YOSHIO , YAMADA YOHEI , KANAI FUMIYUKI
IPC分类号： H01L21/283 , H01L21/316 , H01L21/76
摘要： PURPOSE:To enable formation of a groove-type isolation region by a simple process by forming an insulating matter for charging a groove selectively only inside the groove in a self-alignment manner. CONSTITUTION:After a thermal oxide film 602 is formed on a surface of an Si substrate 601, a photoresist 603 is formed in a specified region and the thermal oxide film 602 and the Si substrate 601 are dry-etched using it as a mask for forming a wide groove 604 and a narrow groove 605. After the photoresist 603 is removed, an SiO2 film 606 is deposited by a CVD method and the CVD/ SiO2 606 is etched and removed by a thickness of the deposited film to make the SiO2 606 remain in a side of the groove. In the state, Si is exposed only in bottoms of the grooves 604, 605 and other parts are covered with SiO2 602, 606. Then, SiO2 607 is selectively formed and a groove type isolation region is formed by a simple process.

78. 发明专利

JPH04320058A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04320058A
公开(公告)日：1992-11-10
申请号：JP8654891
申请日：1991-04-18
申请人： HITACHI LTD
发明人： KONDO MASAO , NANBA MITSUO , KOBAYASHI TAKASHI , IIJIMA SHINPEI , NAKAMURA TORU
IPC分类号： H01L21/8249 , H01L21/331 , H01L27/06 , H01L29/73 , H01L29/732
摘要： PURPOSE:To improve an operating speed and reliability at a low temperature by specifying a thickness of an N-type single-crystal Si layer of an emitter and forming a potential barrier of a special value in a valance band in a junction boundary between the N-type polycrystalline Si film of the emitter and an N-type single-crystal Si layer of a substrate. CONSTITUTION:A semiconductor substrate in which an insulating film on a surface of a P-type base layer is removed and an Si surface is exposed, is inserted into a reduced pressure vapor growing furnace at 350 deg.C, then heated to 520 deg.C, Si2H6, PH3 of reaction gases are fed, and a P-doped amorphous Si film is deposited 100nm in a state that a pressure in the furnace is maintained at 30Pa. The substrate is heated at 760 deg.C in N2 gas thereby to crystallize the amorphous Si film to form an N-type polycrystalline Si film 7, P is simultaneously diffused in the substrate to form an N-type single-crystal Si layer 6. A potential of 60 to about 80meV is formed on the boundary between the films 7 and 6, and the thickness of the layer 6 becomes 60 to 25nm.

79. 发明专利

JPH0444234A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0444234A
公开(公告)日：1992-02-14
申请号：JP14864290
申请日：1990-06-08
申请人： HITACHI LTD
发明人： NANBA MITSUO , KOBAYASHI TAKASHI , IIJIMA SHINPEI , NAKAMURA TORU
IPC分类号： H01L29/73 , H01L21/331 , H01L29/732
摘要： PURPOSE:To enable a polycrystal silicon layer with a crystal grain whose diameter is 5 times larger than the film thickness to be formed by performing heat treatment of an amorphous silicon film and then to enable an extremely shallow function to be formed by allowing phosphor which is included within the polycrystal silicon film to be dissipated into a ground semiconductor substrate for forming a shallow junction whose depth is 40 - 70 nm. CONSTITUTION:An insulation film 3 is formed on a semiconductor substrate 1 by using heat oxidation and CVD (a). Then, an insulation film 3 which is formed on a region K is selectively eliminated by lithography and dry etching technology (b). Further, a polycrystalline silicon film 6 which is 39 nm thick and is doped with boron is formed on an entire surface (c). Then, PH3 and Si2H6 are used as raw material gases and a phosphor-doped silicon film 4 which is 70 nm thick is formed by the reduced pressure CVD method (d). In this state, the silicon film 4 is amorphous. Then, a polycrystalline silicon with a maximum crystal grain diameter of 600 nm is obtained by heat treatment, thus forming an emitter layer 5 whose junction depth is 200 nm within a base layer 2.

80. 发明专利

JPH03293717A X-RAY MASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03293717A
公开(公告)日：1991-12-25
申请号：JP18394390
申请日：1990-07-13
申请人： HITACHI LTD
发明人： OIIZUMI HIROAKI , MOCHIJI KOZO , IIJIMA SHINPEI
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To suppress a positional distortion caused by the deterioration of a material due to an X-ray exposure and to hold the array of mask patterns accurately by reducing an impurity quantity contained in a mask base material. CONSTITUTION:An oxygen amount in a silicon mask base material is controlled. That is, oxygen contained is an impurity in a silicon nitride film 2 forms a chemical bond with silicon in the film. Since the Si-O bond is collapsed upon reception of an emitted radioactive ray and a positional distortion is generated by the deterioration of the material, an impurity oxygen quantity in the film 2 is reduced to a predetermined value or less. Thus, an X-ray mask of high quality in which the positional distortion caused by the deterioration of the material due to the X-ray exposure does not occur due to the influence of the collapse of the Si-O bond, is obtained.

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