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    • 71. 发明专利
    • ALIGNER
    • JPH01120819A
    • 1989-05-12
    • JP27870687
    • 1987-11-04
    • CANON KK
    • KOSUGI MASAOHANEDA HIDEOTOTSUKA MASAOTORIGOE MAKOTO
    • G03F9/00G03F7/20H01L21/027H01L21/30
    • PURPOSE:To correct a system error created when a pattern on the surface of a 1st object is aligned and transcripted onto the surface of a 2nd object satisfactorily and maintain highly accurate alignment by a method wherein the image focusing status of the image of an alignment pattern formed on a 3rd object is detected to obtain the system error. CONSTITUTION:A light beam from a lighting system 4 is applied to a reticle 2 which is a 1st object held by a platen 6. The pattern of an electronic circuit or the like formed on the surface of the reticle 2 is projected and transcripted onto the surface of a wafer 3 which is a 2nd object by a projection lens 1. A reticle microscope 7 for aligning the reticle 2 with a reticle reference mark 5 is provided on the side of the reticle 2 opposite to the side of the wafer 3. The relative position error between a reticle setting mark formed on the reticle 2 and the reticle reference mark 5 is read by the reticle microscope 7 and the reticle 2 and the platen 6 are driven by a reticle stage 8 so as to make the relative position error close to zero to achieve the reticle alignment.
    • 72. 发明专利
    • ALIGNER
    • JPS6477125A
    • 1989-03-23
    • JP32972287
    • 1987-12-28
    • CANON KK
    • TORIGOE MAKOTOSUZUKI AKIYOSHI
    • H01L21/68G03F9/00H01L21/027H01L21/30
    • PURPOSE:To enable the inter-optical axis distance between a projection optical system and an alignment optical system to be monitored providing the alignment with high precision by a method wherein a recording medium capable of writing-in and erasing is arranged outside an exposed body of a movable stage loaded with the exposed body. CONSTITUTION:A reticle 2 is irradiated with light from an irradiation optical system 1 to transfer the pattern of the reticle 2 to a wafer 4 on a movable stage 5 by a projection optional system 3. The movement amount of the movable stage 5 is monitored by a laser length measuring instrument 8. A photomagnetic recording medium 6 is arranged outside the wafer 4 on the movable stage 5 to make the level of said medium 6 flush with the level of the wafer 4. An electromagnet 7 is buried in the part below the photomagnetic recording medium 6 so that said medium 6 magnetized downward may focus an alignment mark 18 on the reticle 2 on the part immediately below the projection optical system 3 to detect the position of the mark 18 by the difference in the polarization state due to the difference in the magnetizing directions. In such a constitution, the inter-optical axis distance between the projection optical system 3 and an alignment optical system 9 can be measured accurately by the movement amount of the stage 5 measured by the laser length measuring instrument 8 and the mark position detected.
    • 73. 发明专利
    • ALIGNER
    • JPS63220519A
    • 1988-09-13
    • JP5304387
    • 1987-03-10
    • CANON KK
    • TORIGOE MAKOTO
    • G03F9/00H01L21/027H01L21/30
    • PURPOSE:To detect a mark for positioning accurately and rapidly by changing the position of a substrate when a film is removed through a film removal means and when the mark is detected through a mark detecting means. CONSTITUTION:A substrate 14 is displaced previously so that a light irradiation region for removing a photoresist on the substrate 14 is brought onto a light transmission section, to which a pattern is not formed, on the substrate 14 on light irradiation for removing the photoresist. The substrate 14 is shifted where capable of positioning by an optical system and positioning marks 14a-1, 14a-2, 16a-1, 16a-2 on positioning. The substrate is moved during that time by driving a substrate stage 30 by a substrate stage driver 31 by a command from a CPU 40. When an XY interferometer is used for measuring the position of the substrate at that time, the movement of the substrate can be controlled with precision sufficient for positioning after light irradiation for removing the resist. Accordingly, the adverse effect of a photosensitive body film at the time of positioning in an exposure device is eliminated and the substrate can be positioned accurately, thus improving throughput.
    • 74. 发明专利
    • MARK FORMING METHOD
    • JPS63209125A
    • 1988-08-30
    • JP4350687
    • 1987-02-25
    • CANON KK
    • TORIGOE MAKOTO
    • G03F9/00H01L21/027H01L21/30H01L21/68
    • PURPOSE:To perform an accurate alignment always easily irrespective of the variation in a projection state, the type of resist, etc., by irradiating a wafer with a light having removing action for forming an irregular surface, and forming an alignment mark by the irregularity. CONSTITUTION:A wafer 7 is conveyed, an initial exposure zone is set at an exposure position on the basis of input information, and an aperture 9 is approached above a reticle 4 to be introduced into an optical path. An actuator 13 drives the aperture 9 to irradiate only an alignment mark 12, and then a CPU 14 radiates from an excimer laser source 1 a laser beam having much larger intensity than a main exposure. When a strong exposure is executed, resist 7a is completely removed only at the part, and a reticle alignment mark image 11 remains as the irregular surface on the resist 7a. Thus, even if the distortion of a projected exposure image, variation in the magnification occur, an accurate alignment is performed irrespective of the type of the resist 7a.
    • 75. 发明专利
    • EXPOSURE UNIT AND EXPOSURE METHOD
    • JPS62222636A
    • 1987-09-30
    • JP6758486
    • 1986-03-25
    • CANON KK
    • TORIGOE MAKOTO
    • G03F9/00G01B11/00H01L21/027H01L21/30H01L21/67H01L21/68
    • PURPOSE:To enable a wafer to be exposed in a correctly registered position, by irradiation registering marks by means of a light irradiating means for eliminating errors in detecting positions of marks caused by the presence of photoresist. CONSTITUTION:Light from an excimer laser source 11 travels via an aperture member 12, a luminous energy regulating mechanism 17 provided by a switchable ND filter and relay lens 13 and enters a roof prism 5 through a retractable mirror 8. The light is divided by the roof prism 5 into two oppositely directed rays and applied to registering marks 16a-1 and 16a-2 on the top face of a wafer 16. The luminous energy of the light from the light source 11 is regulated by a luminous energy regulating mechanism 17 for each resist. Photoresist applied on the registering marks and on the periphery thereof can be removed thereby. Since photoresist in the proximity of the registering marks has been removed, the wafer can be scanned by an argon ion laser beam 1 with the retractable mirror positioned as indicated by the broken lines without errors in detecting positions due to nonuniformity in the photoresist layer and without shortage of scattered light due to the photoresist absorbing light.
    • 76. 发明专利
    • EXPOSING DEVICE
    • JPS61280619A
    • 1986-12-11
    • JP12218485
    • 1985-06-05
    • CANON KK
    • TORIGOE MAKOTO
    • H01L21/30G03F7/20H01L21/027
    • PURPOSE:To enable to perform a uniform exposure on a wafer in a scanning type exposing device by a method wherein pulsed laser beam is irradiated on the wafer each time the scanning position reaches the prescribed positions at equal intervals. CONSTITUTION:Pulse-status laser beam, which is irradiated from an excimer laser light source 2, is made to diverge from its focal position F by a convex cylindrical lens 3, is reflection-condensed by a ring-band type spherical mirror 4, is turned into circular arc slit-shaped light in the Y direction and is irradiated on a mask M, while the carriage carrying the mask M and a water W thereon is made to shift to the X direction, electrical pulse for laser irradiation generates each time an index 6 passes through the graduations of a graduated scale 7 and lastly the circuit pattern of the mask M is exposed on the whole surface of the wafer W. As a pulse exposure is performed spacially and at equal intervals on the wafer W each time the carriage is made to shift as much as the slit width L to the scanning direction, an exposure can be performed continuously, and at the same time, uniformly on the wafer W.
    • 78. 发明专利
    • ILLUMINATING OPTICAL SYSTEM
    • JPS61188517A
    • 1986-08-22
    • JP2994885
    • 1985-02-18
    • CANON KK
    • TORIGOE MAKOTOSUZUKI AKIYOSHI
    • G02B27/10G03F7/20H01L21/027
    • PURPOSE:To suppress the occurrence of the speckle, to improve the illumination efficiently and the through-put by guiding plural pulse fluxes from the laser to the different path by a shunt circuit means and superposing it to an irradiated surface by a converging system and executing the irradiation once. CONSTITUTION:The light flux of an excima-laser 1 is shaped by an aforcal converter 2, shunted by scanning mirrors 3 and 5, scanned in the two-dimentional manner on a fly eye lens surface 7 by an ftheta lens 6, the secondary light source is formed and an irradiated surface 9 is illuminated by the converging system 8. The beam made incident on the lens 7 is almost parallel, the light flux at every pulse from the laser 1 is guided at every element lens of the lens 7, goes to be a point light source at the outlet, for respective points on the irradiated surface 9, only one beam arrives by one irradiation, and therefore, the interference hardly occurs. Consequently, by using the high output laser, the occurrence of the speckle is suppressed on the irradiated surface, the illumination can be efficiently illuminated, and the through-put can be improved.
    • 79. 发明专利
    • LIGHTING OPTICAL SYSTEM
    • JPS60232552A
    • 1985-11-19
    • JP8787984
    • 1984-05-02
    • CANON KK
    • TORIGOE MAKOTO
    • G03B27/54G02B19/00G03F7/20H01L21/027
    • PURPOSE:To obtain the lighting optical system which transfers a fine pattern image with no distortion to a wafer by providing a means for Koehler illumination with light from a light source, a means which is arranged on an irradiated surface of the Koehler illumination and controls the light into an arcuate shape, and a means which projects the image from the control means upon a specific surface. CONSTITUTION:The light emitted by the extrahigh pressure mercury lamp 1 is converted on a light integrator 3 through an elliptic mirror 2. Further, light from respective points of the light integrator 3 is collimated through a collimator lens into a parallel light beam, which illuminates the surface of an arcuate slit 5 for the Koehler illumination with number of pieces of luminous flux. Further, the luminous flux passed through the arcuate slit 5 is projected on the surface of a mask 7 by an arcuate slit image formation optical system 6 to form a semiarcuate unirradiated area. Thus, the arcuate slit 5 is arranged in the irradiated surface of the Koehler illumination and the image of this arcuate slit 5 is formed on the surface of the mask 7, so there is not an effective light source image formed on the mask surface like before and the patten image transferred to the wafer, therefore, has no distortion.