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61. 发明专利

JPH07232996A SM-CONTAINING FLUORITE TYPE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH07232996A
公开(公告)日：1995-09-05
申请号：JP30601994
申请日：1994-12-09
申请人： TOSOH CORP
发明人： INOUE YUKA , HARA SHINICHI
IPC分类号： G03C1/72 , C30B11/00 , C30B13/00 , C30B15/36 , C30B29/12 , G02F1/35 , G02F1/355 , G03H1/02 , G11B7/24 , G11B7/243
摘要： PURPOSE:To produce the hole burning crystal with which a stable hole burning is effected even at room temp. and a narrow line width of the hole can be attained by melting and solidifying a mixture of fluoride or oxide of Sm and halides of Ca, Sr, Na, Y and Gd in a non-oxidizing atmosphere. CONSTITUTION:In the production of this hole burning crystal, fluoride or oxide of Sm and halides of Ca, Sr, Na, Re and Re' (wherein each of Re and Re' is Y or Gd) are mixed together in atomic ratios in the product crystal of Sm:Ca: Sr:Na:Re:Re':F:X=p:(1-p-q):(p-q):t:(1-gamma):gamma:(6-v)v, wherein: X is Cl, Br or I; 0.001 as the guest optically active ion and in which the composition of the host is represented by the formula SmpCa1-p-qSrp+qNatRe1-rRe'rF6-vXv.

62. 发明专利

JPH07215797A FLUORITE-TYPE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH07215797A
公开(公告)日：1995-08-15
申请号：JP973394
申请日：1994-01-31
申请人： TOSOH CORP
发明人： KODAMA NOBUHIRO , HARA SHINICHI , HIRAO KAZUYUKI
IPC分类号： C30B13/00 , C30B27/00 , C30B27/02 , C30B29/12
摘要： PURPOSE:To obtain a crystal which gives a stable hole burning effect even at room temp. and has excellent characteristics by forming a fluorite crystal containing Sm as the guest photoactive ion and a specified fluorine compd. as the host. CONSTITUTION:Fluorides or oxides of Sm, Ca, Sr, Na, Ce, Re (Re is Gd or La) are mixed in such an atomic ratio in the grown crystal as Sm:Ca:Sr:Na:Ce: Re=x:1-x-y:1-x-z:1:p:1-p (wherein x, y, z and p satisfy 0.001 as the guest photoactive ion. In formula, Re is Gd or La, x, y, z and p satisfy 0.001

63. 发明专利

JPH07172992A SM-CONTAINING FLUORITE TYPE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH07172992A
公开(公告)日：1995-07-11
申请号：JP32430293
申请日：1993-12-22
申请人： TOSOH CORP
发明人： KODAMA NOBUHIRO , HARA SHINICHI
IPC分类号： G03C1/72 , C30B11/00 , C30B13/00 , C30B27/00 , C30B27/02 , C30B29/12 , G02F1/35 , G02F1/355 , G02F1/361 , G11B7/24 , G11B7/243
摘要： PURPOSE:To stably develop hole burning even at a room temperature and to make a hole line width narrow by melting and solidifying a mixture of specific metal fluorides and an oxide in a non-oxidizing gas atmosphere. CONSTITUTION:Fluorides of M (M is Ca or Ba), Sr, A (A is K or Rb), Na, Re and Re' (Re and Re' are Y or Gd) are mixed with Sm fluoride or Sm oxide in a quantified atomic ratio of formed crystal of Sm:M:Sr:A:Na:Re:Re'=x:1-x-y:1- x-z:p:1-p:q:1-q ((x) is 0.001 ion as a guest optically active ion and a host of the formula of SmxM1-x-yAqNa1-pReqRe'1-qF6.

64. 发明专利

JPH07149599A AL OXIDE SINGLE CRYSTAL CONTAINING TB 失效
公开(公告)号：JPH07149599A
公开(公告)日：1995-06-13
申请号：JP29932493
申请日：1993-11-30
申请人： NAT INST RES INORGANIC MAT , MITSUBISHI HEAVY IND LTD
发明人： MIYAZAWA YASUTO , SEKIDA MASAMI , MORITA SHOJI , WATANABE TOSHIYA
IPC分类号： C30B11/00 , C09K11/80 , C30B13/00 , C30B15/00 , C30B29/24 , H01S3/16
摘要： PURPOSE:To obtain an Al oxide single crystal, containing Tb, having characteristics as a luminescent material and suitable as a solid laser, etc., by replacing a part of Tb lattice points in a single crystal of TbAlO3 with Gd. CONSTITUTION:This Al oxide single crystal containing Tb is obtained by weighing high-purity Tb4O7, Gd2O3 and Al2O3 so as to provide a composition expressed by the formula [0.01 deteriorating the optical activity can be suppressed.

67. 发明专利

JPH0717793A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH0717793A
公开(公告)日：1995-01-20
申请号：JP16558993
申请日：1993-07-05
申请人： HITACHI CABLE
发明人： SUZUKI TAKASHI
IPC分类号： C30B11/00 , C30B13/00 , C30B27/02 , C30B29/42
摘要： PURPOSE:To stably obtain a single crystal having a uniformly distributed carbon concn. without deteriorating a graphite jig by using gaseous hydrocarbon having low reactivity with this jig. CONSTITUTION:A GaAs melt 4 is produced in a crucible 2 enclosed by a graphite heater 9. Pure gaseous Ar and gaseous Ar mixture contg. a prescribed amt. of gaseous methane are simultaneously supplied from gas cylinders 12, 13 into a pressure vessel 1. The valves 14, 15 are so controlled that the concn. of the gaseous methane in the atmosphere in the vessel 1 and in-vessel pressure by a gas concn. measuring instrument 19 and a pressure gauge 17 attains prescribed values. The same concn. and the same pressure are maintained in order for the carbon concn. in the crystal to attain the desired value. A seed crystal 8 is immersed into a melt 4 in this state and a GaAs crystal 4 of a prescribed diameter and prescribed length are pulled up. Oxygen is not incorporated into the gaseous methane during growth and, therefore, the oxygen does not come into reaction with the heater 9, etc., and the control of the concn. of the gaseous methane is accurately executed.

68. 发明专利

JPH0710694A TERBIUM ALUMINATE AND ITS PRODUCTION 失效
公开(公告)号：JPH0710694A
公开(公告)日：1995-01-13
申请号：JP17745693
申请日：1993-06-24
申请人： NAT INST RES INORGANIC MAT
发明人： MIYAZAWA YASUTO , SEKIDA MASAMI , MORITA SHOJI , SEKIWA HIDEYUKI
IPC分类号： C09K11/80 , C30B11/00 , C30B13/00 , C30B15/00 , C30B27/00 , C30B27/02 , C30B29/24 , H01S3/16
摘要： PURPOSE:To provide a technique for producing a new luminous material containing terbium as a matrix-constituting element and highly efficiently exhibiting a strong luminescence even at room temperature. CONSTITUTION:A method for producing the single crystal and polycrystal of terbium aluminate expressed by a general formula: Tb1-XAl1+XO3 (-0.5

70. 发明专利

JPH06329491A PRODUCTION DEVICE FOR COMPOUND SEMICONDUCTOR CRYSTAL AND PRODUCTION OF COMPOUND SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH06329491A
公开(公告)日：1994-11-29
申请号：JP14006593
申请日：1993-05-19
申请人： ASAHI GLASS CO LTD
发明人： MURATA KOICHI , SATO MAKOTO , ISHIHARA TOMOYUKI
IPC分类号： C30B11/00 , C30B13/00 , C30B29/42 , H01L21/208
摘要： PURPOSE:To eliminate lineage defect concentrated in dislocation at the bottom of crystal and reduction in yield caused by the lineage defect. CONSTITUTION:This production device for compound semiconductor crystal has a radiation part 1 at the top of a crystal growing furnace and the radiation part consists of a window 2 of quartz glass for observing crystal, having about 70 mm and a radiation part 3 having about 60 mm. Height of grown crystal is 40 mm and length L of the observation window 2 and the radiation part 3 is 130=70+60mm and 3 XH=70mm and X=130-70=60mm>50mm.

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