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61. 发明专利

JP2002066302A NANODIAMOND AND METHOD FOR PREPARING THE SAME 失效
公开(公告)号：JP2002066302A
公开(公告)日：2002-03-05
申请号：JP2000258567
申请日：2000-08-29
申请人： NAT INST FOR MATERIALS SCIENCE
发明人： YUSA HITOSHI
IPC分类号： C04B35/52 , B01J3/06 , C01B31/06
摘要： PROBLEM TO BE SOLVED: To provide nanodiamond having a uniform nano size particle diameter useful for a diamond sintered body, slurry abrasive or the like and to provide a method for preparing the nanodiamond. SOLUTION: The nanodiamond is synthesized by heating carbon nanotubes at >=1,600 deg.C under pressure as high as >=10 GPa.

62. 发明专利

JP2001525244A 失效
公开(公告)号：JP2001525244A
公开(公告)日：2001-12-11
申请号：JP2000524067
申请日：1998-12-10
IPC分类号： B01J3/06

63. 发明专利

JP2001270707A BORON NITRIDE NANOTUBE HAVING SP3 BOND AND METHOD FOR PRODUCING THE NANOTUBE 失效
公开(公告)号：JP2001270707A
公开(公告)日：2001-10-02
申请号：JP2000087835
申请日：2000-03-28
申请人： NAT INST FOR MATERIALS SCIENCE
发明人： YUSA HITOSHI , KURASHIMA KEIJI
IPC分类号： B01J3/00 , B01J3/06 , C01B21/064
摘要： PROBLEM TO BE SOLVED: To develop a technique for synthesis of a boron nitride nanotube having improved rigidity and expectable to be useful for applying SP3 bond to the boron nitride nanotube. SOLUTION: The nanotube containing boron nitride component is produced by heating supercritical nitrogen fluid and a substance containing carbon and boron as constituent elements (e.g. boron carbide) by the radiation with a carbon dioxide gas laser under a high-pressure of >=5 GPa generated by using a diamond anvil cell. The obtained boron nitride nanotube has SP3 bond near the center of the shell.

64. 发明专利

JP2001181777A CYLINDER CORE AND ANVIL CORE FOR SUPERHIGH PRESSURE GENERATING DEVICE 失效
公开(公告)号：JP2001181777A
公开(公告)日：2001-07-03
申请号：JP37704999
申请日：1999-12-24
申请人： FUJI DIES KK
发明人： FUKUSHIMA TAKAHIRO , TERADA OSAMU
IPC分类号： B01J3/06 , C22C29/08
摘要： PROBLEM TO BE SOLVED: To provide a cylinder core and an anvil core for a superhigh pressure generating device capable of withstanding high pressure and high in reliability. SOLUTION: The material of a cylinder core and an anvil core for a superhigh pressure generating device is composed of WC-Co series cemented carbide in which Cl3C2 or Cr3C2 and one or two kinds of VC and TaC are added, by which the abnormal growth of WC particles is suppressed to improve its mechanical strength and moreover to improve its corrosion resistance, and the same is allowed to withstand breakage under high pressure.

65. 发明专利

JP2000296403A COMPOSITE POLYCRYSTALLINE SUBSTANCE CUTTING TOOL AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000296403A
公开(公告)日：2000-10-24
申请号：JP10396399
申请日：1999-04-12
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YOSHIDA KATSUTO , SHIRAISHI JUNICHI , NAKAI TETSUO
IPC分类号： B23B27/20 , B01J3/06 , C04B35/583 , C04B41/87
摘要： PROBLEM TO BE SOLVED: To provide a composite polycrystalline substance cutting tool having a remarkably long tool life with respect to high speed cutting because of its high heat conductivity, and the manufacturing method thereof. SOLUTION: This composite polycrystalline substance cutting tool has a tool supporting body 4, and a composite polycrystalline substance material is formed on the tool supporting body 4 through a brazing filler metal 3. The composite polycrystalline substance material has a polycrystalline diamond layer 2 synthesized and grown by low pressure gas phase method, and a CBN sintered body 1 formed by extra-high pressure sintering, and the polycrystalline diamond layer 2 is arranged on the side of the tool supporting body 4.

66. 发明专利

JP2000512219A 失效
公开(公告)号：JP2000512219A
公开(公告)日：2000-09-19
申请号：JP54281398
申请日：1998-03-26
IPC分类号： B24D3/00 , B01J3/06 , B23P15/28 , B24D7/06 , B24D11/06 , B24D99/00 , C22C1/05 , C22C26/00 , E21B10/56 , E21B10/567

67. 发明专利

JPH11207167A PRODUCTION OF ULTRAHIGH PRESSURE PRODUCT 失效
公开(公告)号：JPH11207167A
公开(公告)日：1999-08-03
申请号：JP1134298
申请日：1998-01-23
申请人： SHOWA DENKO KK
发明人： OTSUBO HIROHIKO , KASHIMA SHINJI , ARAKAWA KAZUHISA
IPC分类号： B01J3/06
摘要： PROBLEM TO BE SOLVED: To produce an ultrahigh pressure product having high quality by hermetically sealing a raw material system in a metal vessel beforehand and maintaining the hermetically sealed raw material system in the metal vessel, together with the vessel, at a high temp. under a high pressure, at the time of producing diamond, cubic boron nitride or any of their sintered bodies under conditions of high temp. and high pressure. SOLUTION: This production comprises: alternately stacking graphite plates 1a and solvent metal (Fe-36Ni) plates 1b in a cylindrical iron vessel 2; placing an iron plate used as a pressing plate, on the resulting stack; compacting the stack by adding a load to the iron plate to press the stack until the height of the stack is equal to the height of a cylinder of the vessel 2; in that state, welding the iron plate to the cylinder; receiving the iron vessel 2 in which the compacted stack used as a raw material system is hermetically sealed, in a sleeve 3 made of MgO and covering the sleeve 3 with a disk 4 made of the same material as that of the sleeve 3; and maintaining the raw material system, for example, at 1,400 deg.C, under a 5.5 GPa pressure for 30 min to synthesize diamond. Thus, by hermetically sealing the raw material system in the iron vessel 2, the raw material system can be compressed so as to have a higher density, to easily produce diamond, cubic boron nitride or any of their sintered bodies.

68. 发明专利

JPH11197489A METHOD FOR GROWING CRYSTALS OF DIAMOND AND CUBIC BORON NITRIDE 失效
公开(公告)号：JPH11197489A
公开(公告)日：1999-07-27
申请号：JP370398
申请日：1998-01-12
申请人： SHOWA DENKO KK
发明人： OTSUBO HIROHIKO , SAKURAI TETSURO
IPC分类号： B01J3/06 , C30B29/04 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To efficiently enable production of the crystals of diamond and cubic boron nitride with a uniform grain size by distributing seed crystals regularly on a tacky sheet through passing seed crystals through regularly arranged holes, and transferring/forcing the seed crystals on the tacky sheet into the surfaces of a solvent substance plate or the like to cause the crystal growth. SOLUTION: A raw material substance layer comprising a non-diamond carbon or a low pressure phase boron nitride and a solvent substance layer are laminated on each other, and a plurality of seed crystals 4 are arranged so that the seed crystals 4 come into contact with the solvent substance layer. Further, the crystals of diamond or cubic boron nitride the caused to grow under specific pressure and temperature conditions. In this crystal growth method, the seed crystals 4 are placed in a rotary drum-like container 3 with holes 2 formed regularly on the circumferential face 1, and the rotary drum 3 is rotated to stick the seed crystals 4 regularly onto a tacky sheet 5 through the holes 2. After that, the seed crystals 4 on the tacky sheet 5 are regularly transferred and forced into the surface of a solvent substance plate or a row material substance plate to cause the crystal growth.

69. 发明专利

JP2920107B2 失效
公开(公告)号：JP2920107B2
公开(公告)日：1999-07-19
申请号：JP8744796
申请日：1996-03-16
申请人： SUMITOMO JUKIKAI KOGYO KK
发明人： TAWATARI MASASHI , TANAKA TOORU
IPC分类号： B01J3/06 , C30B29/04 , C30B29/38 , G01N3/08 , G01N19/00

70. 发明专利

JP2920084B2 失效
公开(公告)号：JP2920084B2
公开(公告)日：1999-07-19
申请号：JP6678795
申请日：1995-03-01
申请人： SUMITOMO JUKIKAI KOGYO KK
发明人： TAWATARI MASASHI
IPC分类号： G01N19/00 , B01J3/06 , C30B29/04 , C30B29/38 , G01N3/08

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